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Microchip Technology JAN1N5802URS/TR
- Part No.:
- JAN1N5802URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JAN1N5802URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:8,257
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Product details
Overview
JAN1N5802URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) hermetic MELF-style package, rated for 50 V working peak reverse voltage, 2.5 A average forward current at TEC = 75 °C, and 25 ns reverse recovery time - deployed in high-reliability DC/DC converters and radiation-hardened power supplies.
For engineers reviewing the JAN1N5802URS/TR datasheet, JAN1N5802URS/TR pinout, JAN1N5802URS/TR application, or JAN1N5802URS/TR equivalent, key selection criteria include its Category 1 metallurgical bond, voidless hermetic glass construction, 13 °C/W junction-to-end-cap thermal resistance, and MIL-PRF-19500/477 JAN-level qualification for space-grade thermal cycling and shock survivability.
Technical Context
This diode implements an ultrafast recovery mechanism via optimized silicon doping and low-carrier lifetime control, enabling 25 ns trr under IF = 0.5 A / IRM = 0.5 A test conditions. Its hermetically sealed voidless glass body with tungsten slugs ensures stable junction temperature operation from –65 °C to +175 °C.
The URS package features asymmetric end caps (one square, one round) for mechanical polarization and orientation control during automated placement. Cathode polarity is marked by a color band on the glass body, and terminals use Sn/Pb plating over nickel-copper for solderability and intermetallic stability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 50 V - Maximum continuous reverse voltage before breakdown; defines safe operating range in 48 V input stages. |
| IO1 @ TEC = 75 °C | 2.5 A - Sustained rectified output current when end-cap temperature is held at 75 °C; requires heatsinking design. |
| trr | 25 ns - Time to recover from forward conduction to <5% of peak reverse current; enables >1 MHz switching in SMPS. |
| RθJEC | 13 °C/W - Thermal resistance from junction to end cap; allows direct thermal path to metal-core PCB or chassis mount. |
| IFSM (8.3 ms) | 35 A - Non-repetitive surge current rating; supports cold-start inrush and transient overload without failure. |
| VF @ 1.0 A | 0.875 V - Forward voltage drop at 1 A pulse; contributes to <2.2 W conduction loss at full rated current. |
| C @ 10 V, 1 MHz | 25 pF - Junction capacitance; minimizes capacitive coupling noise in high-dV/dt gate-drive or snubber circuits. |
Pinout & Package
Package: URS - Hermetically sealed voidless glass MELF variant with one square end cap and one round end cap (per ASME Y14.5M), total weight 193 mg, cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input source or transformer secondary; must withstand 35 A surge and 175 °C peak junction temperature. |
| Cathode | Forward current exit point | Marked by color band; connects to output filter capacitor or load return; defines polarity-sensitive mounting orientation. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination; certified for 1000+ thermal cycles per MIL-STD-883 Method 1010. |
| Category 1 metallurgical bond | Gold-tungsten interface between die and slug ensures <1×10−6 Ω contact resistance and zero bond lift under 500 g shock. |
| Quadruple-layer passivation | Silicon nitride + phosphosilicate glass stack prevents surface ion migration and leakage drift over 20-year mission life. |
| Controlled avalanche capability | Rated for peak reverse power dissipation up to 175 W (at VRWM = 50 V, IR = 1 µA); protects against inductive kickback. |
Applications
| Spacecraft Power Distribution | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: DC bus rectification in satellite solar array regulators exposed to total ionizing dose >100 krad(Si). IC Role / Device Role / Timing Role: Ultrafast recovery rectifier handling 2.5 A continuous output with minimal stored charge to prevent latch-up during single-event transients. Use Value: Inherent radiation hardness per MicroNote 050 and 175 °C max junction temperature enable uninterrupted operation in LEO/GEO orbits. |
Use Scenario: High-pulse-duty-cycle rectification in airborne radar modulator power supplies with rapid thermal cycling. IC Role / Device Role / Timing Role: Primary output rectifier in resonant LLC converters switching at 300–500 kHz, requiring <30 ns trr and robust surge tolerance. Use Value: 35 A IFSM and 13 °C/W RθJEC allow reliable operation under 10 ms pulsed loads without derating beyond 125 °C ambient. |
| Avionics Flight Control Units | Nuclear Instrumentation Systems |
Use Scenario: Redundant 28 V DC power conditioning in fly-by-wire actuator controllers where failure is catastrophic. IC Role / Device Role / Timing Role: Input-stage rectifier in dual-redundant DC/DC modules meeting DO-254 DAL-A requirements. Use Value: JAN-level qualification per MIL-PRF-19500/477 guarantees traceable lot history, burn-in, and 100% parametric screening. |
Use Scenario: Detector bias supply rectification in gamma spectroscopy front-ends operating inside reactor containment. IC Role / Device Role / Timing Role: Low-noise, low-leakage rectifier delivering stable 50 V bias to HPGe detectors at 125 °C ambient. Use Value: 1 µA max IR at VRWM and 25 pF capacitance minimize signal baseline drift and EMI coupling into sensitive analog chains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5802US | Same die, US package (two square end caps); RθJEC = 13 °C/W identical; same trr and VRWM. | Requires different pick-and-place nozzle geometry due to symmetric end caps; no thermal or electrical difference. | Select when board layout uses standard MELF tape-and-reel carriers compatible with US footprint. |
| JANS1N5802URS | Identical URS package and electrical specs; differs only in screening level (JANS vs JAN) and extended temperature testing. | Required for Class S spaceflight missions with full lot traceability, radiation lot acceptance testing, and 100% thermal vacuum cycling. | Select when program mandates JANS-level reliability per NASA GSFC-STD-7000A or ESA ECSS-Q-ST-60C. |
Compared with JANTXV1N5802US and JANS1N5802URS, the JAN1N5802URS/TR offers identical ultrafast performance and hermetic reliability at the entry-tier JAN qualification level - balancing cost, lead time, and proven field performance for non-space-critical defense platforms.
Availability
JAN1N5802URS/TR is available at Aetrix Electronics and suitable for spacecraft power distribution, military radar transmitter supplies, and avionics flight control units requiring stable component supply across extended procurement cycles and obsolescence-sensitive programs.
Supply support for JAN1N5802URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and extended-temperature solutions.
The JAN1N5802URS/TR belongs to Microsemi's military-qualified ultrafast rectifier family, engineered specifically for mission-critical power conversion where failure modes must be eliminated through hermetic sealing, Category 1 bonding, and MIL-PRF-19500 compliance.
FAQ
What does "URS" signify in JAN1N5802URS/TR?
The "URS" suffix denotes the package configuration: one square end cap and one round end cap, per Microsemi's nomenclature. This asymmetric geometry provides mechanical polarization for automated optical alignment during SMT placement. The JAN1N5802URS/TR uses this URS form factor exclusively - it is not interchangeable with US (dual-square) or axial-leaded variants without requalification.
Is JAN1N5802URS/TR RoHS compliant?
No - JAN1N5802URS/TR is not RoHS compliant. Per the datasheet, RoHS-compliant versions (e3 marking) are available only for commercial-grade devices, not for JAN-level qualified parts. The JAN1N5802URS/TR uses traditional Sn/Pb terminations to ensure solder joint integrity under extreme thermal cycling and mechanical shock per MIL-STD-883.
What is the maximum junction temperature for JAN1N5802URS/TR?
The maximum rated junction temperature for JAN1N5802URS/TR is +175 °C, with storage temperature spanning –65 °C to +175 °C. This rating is validated across all JAN qualification levels and supported by thermal impedance data showing ZθJX = 4.0 °C/W at tH = 10 ms, enabling operation in high-ambient environments like engine bays or reactor vaults.
How is polarity identified on JAN1N5802URS/TR?
Polarity is indicated by a color band on the glass body, marking the cathode terminal. This band is visible on the cylindrical portion of the URS package and aligns with industry-standard MELF marking conventions. The anode connects to the unmarked end cap - either square or round depending on orientation - and must be verified using continuity testing prior to system integration.
Can JAN1N5802URS/TR replace JAN1N5802US in existing designs?
JAN1N5802URS/TR and JAN1N5802US share identical electrical specifications and thermal resistance, but differ in mechanical form: URS has one square and one round end cap, while US has two square end caps. Replacement requires verification of pick-and-place nozzle compatibility, board-level thermal pad symmetry, and reflow profile alignment - no electrical redesign is needed.
JAN1N5802URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 50 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
- Operating Temperature - Junction:
- -65°C ~ 175°C
JAN1N5802URS/TR FAQ
1.How can I place an order for JAN1N5802URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5802URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5802URS/TR reliable?
The price and inventory of JAN1N5802URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5802URS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5802URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5802URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5802URS/TR?
JAN1N5802URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5802URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5802URS/TR?
For technical support, including JAN1N5802URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5802URS/TR requirements.
6.How does Aetrix verify that JAN1N5802URS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5802URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5802URS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5802URS/TR?
All JAN1N5802URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5802URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5802URS/TR part is unused and in its original packaging.
Return procedure for JAN1N5802URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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