Microchip Technology JAN1N5804

Overview

JAN1N5804 from Microsemi is a military-qualified ultrafast recovery glass rectifier diode rated for 100 V working peak reverse voltage, 2.5 A average forward current at 75 °C lead temperature, and 25 ns reverse recovery time; it features voidless hermetic glass packaging with Category 1 metallurgical bonds and is used in high-reliability switching power supplies and radiation-hardened systems.

For engineers reviewing the JAN1N5804 datasheet, JAN1N5804 pinout, JAN1N5804 application, or JAN1N5804 equivalent, this part serves as a ruggedized, low-loss rectifier where fast switching, controlled avalanche capability, and MIL-PRF-19500/477 qualification are mandatory design requirements.

Technical Context

This device operates as a unidirectional silicon power rectifier with ultrafast recovery characteristics enabled by optimized carrier lifetime control and quadruple-layer passivation. Its 25 ns trr and 0.875 V forward voltage at 1 A support high-frequency switching topologies while maintaining low conduction loss.

The hermetically sealed voidless glass package with tungsten slugs delivers 36 °C/W junction-to-lead thermal resistance and enables operation from –65 °C to +175 °C. It sustains 35 A non-repetitive forward surge current and exhibits controlled avalanche behavior up to peak reverse power limits defined per Microsemi MicroNote 050.

Key Specifications

Pinout & Package

Package: Hermetically sealed voidless glass "A" (D-5A) package with tin/lead or RoHS-compliant matte tin over nickel over copper terminals; cathode indicated by blue band; weight 340 mg; dimensions BD = 0.065–0.085″, BL = 0.125–0.250″, LD = 0.027–0.032″, LL = 0.700–1.30″.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Compared with JAN1N5804, the commercial 1N5804 offers identical electrical performance but lacks traceable screening and radiation data, while JANTXV1N5804 adds process rigor without altering core rectification behavior-making JAN1N5804 the optimal balance of qualification depth and availability for most defense programs.

Availability

JAN1N5804 is available at Aetrix Electronics and suitable for spacecraft power distribution, military radar transmitter supplies, and avionics flight control PSUs requiring stable component supply with full MIL-PRF-19500/477 traceability and lifecycle continuity.

Supply support for JAN1N5804 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and RF solutions for aerospace, defense, and industrial markets.

JAN1N5804 belongs to Microsemi's military-qualified ultrafast rectifier family, engineered specifically for applications demanding guaranteed performance under extreme thermal, radiation, and mechanical stress conditions.

FAQ

What is the maximum working peak reverse voltage for JAN1N5804?

The maximum working peak reverse voltage (VRWM) for JAN1N5804 is 100 V, verified per MIL-PRF-19500/477 test conditions. This rating applies across the full operating junction temperature range of –65 °C to +175 °C and defines the highest continuous reverse voltage the device can block without exceeding leakage or breakdown limits. JAN1N5804 maintains this rating under all qualified screening levels including JAN, JANTX, JANTXV, and JANS.

Does JAN1N5804 have radiation hardness certification?

Yes, JAN1N5804 exhibits inherent radiation hardness validated in Microsemi MicroNote 050, confirming stable electrical parameters under total ionizing dose (TID) exposure typical of low-earth orbit and nuclear instrumentation environments. While not individually certified per MIL-STD-883 method 1019, its material structure and hermetic construction provide proven resilience without derating-making JAN1N5804 suitable for radiation-aware designs where formal certification is not mandated.

What is the reverse recovery time specification for JAN1N5804?

JAN1N5804 has a maximum reverse recovery time (trr) of 25 ns, measured under standardized conditions: IF = 0.5 A, IRM = 0.5 A, and IR(REC) = 0.05 A. This ultrafast recovery enables efficient operation in high-frequency switching power supplies above 500 kHz, reducing switching losses and EMI compared to standard or fast recovery diodes. The value is consistent across all qualified reliability levels of JAN1N5804.

Is JAN1N5804 available in surface-mount packaging?

No, JAN1N5804 is only available in the axial-lead "A" (D-5A) hermetically sealed glass package per the original Microsemi datasheet T4-LDS-0211. While the commercial 1N5804US variant exists in MELF surface-mount form, the JAN-grade version retains the through-hole configuration to meet mechanical robustness and screening requirements of MIL-PRF-19500/477. No JAN1N5804 SMT variant is documented or qualified.

What thermal resistance does JAN1N5804 exhibit from junction to lead?

JAN1N5804 has a junction-to-lead thermal resistance (RθJL) of 36 °C/W when measured with 0.375 inch lead length, as specified in the absolute maximum ratings table. This value enables accurate thermal modeling when the device is mounted to a heatsink or copper plane via its leads, and supports sustained 2.5 A operation at 75 °C lead temperature. Derating follows 25 mA/°C above 75 °C per datasheet note 1.