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Microchip Technology JAN1N5804URS/TR
- Part No.:
- JAN1N5804URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JAN1N5804URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:7,624
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Product details
Overview
JAN1N5804URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) hermetic package, rated at 100 V working peak reverse voltage, 2.5 A average forward current at TEC = 75 °C, and 25 ns reverse recovery time - deployed in high-reliability DC/DC converters and radiation-hardened power supplies.
For engineers reviewing the JAN1N5804URS/TR datasheet, JAN1N5804URS/TR pinout, JAN1N5804URS/TR application, or JAN1N5804URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 JAN-level qualification, voidless glass hermetic seal, Category 1 metallurgical bond, and 13 °C/W junction-to-end-cap thermal resistance for thermal-limited high-surge designs.
Technical Context
This diode operates as a unidirectional power rectifier with ultrafast switching behavior enabled by controlled carrier lifetime and low stored charge. Its 25 ns reverse recovery time (measured at IF = 0.5 A, IR(REC) = 0.05 A) supports high-frequency operation up to ~2 MHz in flyback and forward converters.
The URS package features tungsten slugs and tin/lead terminations, delivering 13 °C/W thermal resistance from junction to end cap and enabling 35 A non-repetitive forward surge capability under standardized 8.3 ms half-sine conditions at 25 °C ambient.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 100 V - maximum continuous reverse bias before breakdown in high-reliability power rails |
| Average Forward Current (IO1) | 2.5 A @ TEC = 75 °C - sustained output current rating when mounted on thermally optimized end-cap heatsink |
| Reverse Recovery Time (trr) | 25 ns - enables efficient switching above 1 MHz with minimal turn-off loss and EMI generation |
| Forward Voltage (VFM) | 0.875 V @ IF = 1.0 A - low conduction loss critical for efficiency in compact, high-density SMPS |
| Junction-to-End Cap Thermal Resistance (RθJEC) | 13 °C/W - allows direct thermal coupling to chassis or heat spreader without PCB copper pour dependency |
| Surge Current (IFSM) | 35 A - withstands ten 8.3 ms half-sine surges at 1-minute intervals, supporting inrush and fault tolerance |
| Capacitance (C) | 25 pF @ 10 V, 1 MHz - low junction capacitance minimizes capacitive coupling and switching node ringing |
Pinout & Package
Package: URS - hermetically sealed voidless glass case with one square end cap and one round end cap; tungsten slugs; cathode indicated by color band; tin/lead termination; weight 193 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input source or transformer secondary; requires low-inductance layout to minimize turn-on overshoot |
| Cathode | Forward current exit point | Marked by color band; ties to output filter capacitor or load return; primary path for heat conduction to end cap |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year mission life in vacuum or humid environments |
| Category 1 metallurgical bond | Ensures mechanical integrity and thermal continuity between die and tungsten slug under thermal cycling and shock |
| Quadruple-layer passivation | Provides robust surface insulation against contamination-induced leakage and surface conduction paths |
| MIL-PRF-19500/477 JAN qualification | Validated for use in flight-critical systems requiring zero-failure probability per 10⁶ device-hours |
| Controlled avalanche capability | Withstands transient reverse overvoltage events up to peak reverse power limit without parametric shift or failure |
Applications
| Avionics Power Distribution | Spacecraft DC/DC Converters |
|---|---|
Use Scenario: Primary rectification in 28 V DC input stage of radiation-tolerant bus converters aboard LEO satellites. IC Role / Device Role / Timing Role: Ultrafast power rectifier handling 2.5 A continuous output with <25 ns turn-off to suppress switching noise coupling into RF payloads. Use Value: Hermetic URS package ensures no parameter drift after 10 krad(Si) total ionizing dose exposure per MicroNote 050. |
Use Scenario: Input rectification in dual-output 5 V/12 V isolated flyback supply for onboard telemetry processors. IC Role / Device Role / Timing Role: High-surge rectifier absorbing 35 A inrush during cold-start while maintaining <0.9 V forward drop at full load. Use Value: 13 °C/W RθJEC enables direct mounting to aluminum chassis, eliminating need for thermal vias or thick copper pours. |
| Military Vehicle Power Systems | Nuclear Instrumentation Supplies |
Use Scenario: Output rectification in 270 V DC–DC modules powering radar transceivers in armored ground vehicles. IC Role / Device Role / Timing Role: 100 V VRWM rectifier operating at elevated ambient (85 °C) with derated 1.0 A average current per JEDEC spec. Use Value: Low 25 pF junction capacitance prevents parasitic resonance with transformer leakage inductance at 500 kHz switching. |
Use Scenario: AC line rectification in Class 1E safety-critical power supplies for reactor control instrumentation. IC Role / Device Role / Timing Role: MIL-qualified rectifier providing fail-safe DC bus with guaranteed 175 °C junction temperature margin under fault conditions. Use Value: JAN-level screening and Category 1 bond ensure zero latent defects in long-term continuous operation at 125 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5804US | Same die, US package (two square end caps); 15 °C/W RθJEC; identical electrical specs but higher thermal resistance | Preferred where board-level solder reflow compatibility with standard MELF footprint is required over end-cap thermal coupling | Select JANTXV1N5804US if PCB layout uses standard 2-square-pad footprint and thermal management relies on copper area rather than chassis contact. |
| JANS1N5804URS | Same URS package and thermal performance; qualified to JANS level (full radiation hardness assurance per MIL-PRF-19500/477) | Required for missions exceeding 100 krad(Si) TID or single-event burnout (SEB)-prone orbits (e.g., GEO, deep space) | Select JANS1N5804URS when radiation hardness beyond JAN-level screening is mandated by system-level radiation budget. |
Compared with JANTXV1N5804US and JANS1N5804URS, the JAN1N5804URS/TR offers optimal balance of MIL-qualified reliability, 13 °C/W thermal performance, and cost-effective JAN-level screening - making it ideal for avionics and tactical vehicle programs where radiation tolerance is necessary but not extreme.
Availability
JAN1N5804URS/TR is available at Aetrix Electronics and suitable for avionics power distribution, spacecraft DC/DC converters, and military vehicle power systems requiring stable component supply across extended procurement cycles and obsolescence-sensitive programs.
Supply support for JAN1N5804URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and discrete components.
The JAN1N5804URS/TR belongs to Microsemi's military-qualified ultrafast rectifier family, engineered specifically for mission-critical power conversion where hermeticity, surge robustness, and long-term parametric stability outweigh commercial cost targets.
FAQ
What does "URS" signify in JAN1N5804URS/TR?
The "URS" suffix denotes the package configuration: one square end cap and one round end cap, used exclusively for hermetically sealed voidless glass rectifiers. This geometry enables direct thermal coupling to a flat chassis surface via the square end cap while maintaining mechanical stability. The JAN1N5804URS/TR uses this URS form factor to achieve its specified 13 °C/W junction-to-end-cap thermal resistance - a value confirmed in Microsemi's T4-LDS-0211-1 datasheet.
Is JAN1N5804URS/TR RoHS compliant?
No - the JAN1N5804URS/TR uses tin/lead (Sn/Pb) terminations per MIL-PRF-19500/477 JAN-level requirements and is not RoHS compliant. RoHS-compliant versions (e3 suffix) are only available in commercial-grade variants (e.g., 1N5804URS-e3), not in JAN-qualified parts. The JAN1N5804URS/TR maintains legacy Pb-based solder compatibility essential for high-reliability rework and long-term intermetallic stability.
What is the maximum junction temperature for JAN1N5804URS/TR?
The maximum junction temperature for JAN1N5804URS/TR is +175 °C, as specified in the Absolute Maximum Ratings table of the official datasheet. This rating applies across the full storage and operating range (−65 °C to +175 °C) and is validated under MIL-PRF-19500/477 screening. Derating begins at +125 °C for the average forward current rating, ensuring safe operation of the JAN1N5804URS/TR even in high-ambient military enclosures.
How does JAN1N5804URS/TR differ from JAN1N5804US?
JAN1N5804URS/TR uses the URS package (one square + one round end cap), whereas JAN1N5804US uses the US package (two square end caps). This results in different thermal resistances: 13 °C/W for JAN1N5804URS/TR vs. 15 °C/W for JAN1N5804US. Both share identical electrical parameters (100 V VRWM, 25 ns trr, 0.875 V VFM), but the JAN1N5804URS/TR is preferred when direct end-cap thermal conduction is prioritized over standard MELF footprint compatibility.
Can JAN1N5804URS/TR be used in surface-mount reflow processes?
Yes - JAN1N5804URS/TR is qualified for lead-free reflow per JEDEC J-STD-020, with a maximum solder temperature of 260 °C for 10 seconds. Its voidless glass construction and Category 1 metallurgical bond prevent delamination or seal failure during thermal cycling. However, due to its tin/lead terminations, it is intended for Sn/Pb reflow profiles; use with lead-free paste requires process validation to avoid intermetallic embrittlement in the JAN1N5804URS/TR assembly.
JAN1N5804URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 100 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
- Operating Temperature - Junction:
- -65°C ~ 175°C
JAN1N5804URS/TR FAQ
1.How can I place an order for JAN1N5804URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5804URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5804URS/TR reliable?
The price and inventory of JAN1N5804URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5804URS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5804URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5804URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5804URS/TR?
JAN1N5804URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5804URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5804URS/TR?
For technical support, including JAN1N5804URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5804URS/TR requirements.
6.How does Aetrix verify that JAN1N5804URS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5804URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5804URS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5804URS/TR?
All JAN1N5804URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5804URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5804URS/TR part is unused and in its original packaging.
Return procedure for JAN1N5804URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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