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Microchip Technology JAN1N5806URS/TR
- Part No.:
- JAN1N5806URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JAN1N5806URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:3,955
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Product details
Overview
JAN1N5806URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) hermetic package, rated for 150 V working peak reverse voltage, 2.5 A average forward current at TEC = 75 °C, and 25 ns reverse recovery time - deployed in high-reliability DC/DC converters and radiation-hardened power supplies.
For engineers reviewing the JAN1N5806URS/TR datasheet, JAN1N5806URS/TR pinout, JAN1N5806URS/TR application, or JAN1N5806URS/TR equivalent, key selection criteria include its Category 1 metallurgical bond, voidless glass sealing, controlled avalanche capability, and MIL-PRF-19500/477 JAN-level qualification for space-grade thermal cycling and shock resistance.
Technical Context
This device operates as a unidirectional power rectifier with ultrafast switching behavior enabled by low carrier lifetime design and optimized junction geometry. Its 25 ns reverse recovery time (measured at IF = 0.5 A, IR(REC) = 0.05 A) supports high-frequency operation up to ~1 MHz in SMPS topologies while maintaining low forward voltage drop (0.975 V max at 2.5 A).
The URS package features tungsten slugs and hermetically sealed voidless glass construction, delivering 13 °C/W junction-to-end-cap thermal resistance and enabling stable operation from –65 °C to +175 °C. Its cathode band polarity marking and tin/lead terminations comply with MIL-STD-750 Method 2074 solderability requirements.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 150 V - maximum sustained reverse bias before breakdown under full temperature range (–65 °C to +175 °C) |
| Reverse Recovery Time | 25 ns - enables efficient operation in 500 kHz–1 MHz switching power supplies without excessive switching loss |
| Forward Voltage (max) | 0.975 V @ 2.5 A - minimizes conduction loss and thermal rise in high-current rectification paths |
| Average Forward Current | 2.5 A @ TEC = 75 °C - requires heatsinking via end-cap mounting; derates linearly above 125 °C |
| Junction Temperature Range | –65 °C to +175 °C - qualified for extended mission life in aerospace and defense electronics |
| Thermal Resistance (J-to-EC) | 13 °C/W - enables direct thermal path to chassis or heat spreader without PCB copper pour dependency |
| Capacitance | 25 pF @ 10 V, 1 MHz - limits high-frequency noise coupling in EMI-sensitive RF power stages |
Pinout & Package
Package: URS (hermetically sealed voidless glass, one square end cap + one round end cap, 193 mg mass, cathode indicated by color band). Dimensions per Microsemi T4-LDS-0211-1: LTR = 0.091–0.103 in, BL = 0.168–0.200 in, ECT = 0.019–0.028 in.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (square end cap) | Positive input terminal | Accepts forward current; designed for low-inductance connection to primary-side bus or transformer secondary |
| Cathode (round end cap, banded) | Output terminal / reverse-blocking node | Delivers rectified output; withstands 150 V peak reverse voltage with controlled avalanche energy absorption |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year mission life in vacuum or humid environments |
| Category 1 metallurgical bond | Guarantees mechanical integrity under 1000 g shock and 20 g RMS vibration per MIL-STD-883 Method 2007 |
| Controlled avalanche capability | Withstands transient reverse power surges up to 175 W (peak) without degradation or parametric shift |
| Quadruple-layer passivation | Prevents surface leakage and ion migration under high humidity and bias stress (MIL-STD-750 Test Method 1082) |
| Radiation hardness | Inherently tolerant to total ionizing dose ≥ 100 krad(Si) per MicroNote 050 - no shielding required for LEO missions |
Applications
| Spacecraft Power Distribution | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: Rectifying 100–150 V DC bus in satellite solar array regulators operating at –40 °C to +85 °C ambient. IC Role / Device Role / Timing Role: Ultrafast power rectifier handling 2.5 A continuous forward current with <25 ns turn-off to minimize dead-time losses. Use Value: Hermetic URS package ensures zero parametric drift after 15-year orbital exposure; 13 °C/W RθJEC enables passive thermal management on aluminum chassis. | Use Scenario: Output stage rectification in pulsed X-band radar modulator supplies subject to 35 A surge currents and rapid thermal cycling. IC Role / Device Role / Timing Role: High-surge-capable rectifier with controlled avalanche clamping during pulse termination transients. Use Value: 35 A IFSM rating and 175 W peak reverse power capability prevent failure during magnetron turn-off spikes. |
| Avionics Flight Control PSUs | Nuclear Instrumentation Power Modules |
Use Scenario: Input rectification in triple-redundant 28 V DC/DC converters powering fly-by-wire actuators in commercial aircraft. IC Role / Device Role / Timing Role: MIL-PRF-19500/477 JAN-qualified rectifier ensuring zero latent defects and guaranteed lot traceability. Use Value: JAN-level screening (including burn-in, thermal shock, and life test) meets DO-254 DAL-A hardware assurance requirements. | Use Scenario: Primary AC/DC conversion in gamma spectroscopy detector modules operating inside reactor containment zones. IC Role / Device Role / Timing Role: Radiation-hardened rectifier maintaining stable VF and trr performance after 100 krad(Si) TID exposure. Use Value: Inherent radiation tolerance eliminates need for external shielding or derating - verified per MicroNote 050. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5806US | Same die, US package (two square end caps); 13 °C/W RθJEC unchanged; identical electrical specs | Requires different PCB pad layout due to dual-square footprint; less optimal for asymmetric thermal mounting | Select when legacy board layout uses US footprint or when dual symmetric terminations simplify automated placement |
| JANS1N5806URS | Same URS package and die; JANS qualification adds extended temperature testing (–65 °C to +175 °C) and lot acceptance test per MIL-PRF-19500/477 Table I | Required for manned spaceflight and nuclear command systems where full JANS screening is mandated | Select when program specification explicitly requires JANS-level reliability documentation and radiation test reports |
Compared with JAN1N5806URS/TR, JANTXV1N5806US offers identical performance in a mechanically distinct package, while JANS1N5806URS provides enhanced screening rigor without electrical trade-offs - both serve as functionally aligned alternatives where qualification level or mechanical fit drives final selection.
Availability
JAN1N5806URS/TR is available at Aetrix Electronics and suitable for spacecraft power distribution, military radar transmitter supplies, and avionics flight control PSUs requiring stable component supply across extended product lifecycles and rigorous environmental qualification.
Supply support for JAN1N5806URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and MIL-spec components.
The JAN1N5806URS/TR belongs to Microsemi's ultrafast glass rectifier family engineered specifically for mission-critical power conversion where failure is not an option - combining hermetic reliability, controlled avalanche robustness, and extended temperature operation.
FAQ
What is the maximum junction temperature rating for JAN1N5806URS/TR?
JAN1N5806URS/TR has a maximum junction temperature of +175 °C and minimum storage temperature of –65 °C, validated per MIL-PRF-19500/477. This rating applies across all JAN-level qualification tests including thermal cycling, steady-state life, and high-temperature reverse bias. The device maintains specified trr and VF performance within this full range, making JAN1N5806URS/TR suitable for engine bay or satellite payload environments.
Does JAN1N5806URS/TR support RoHS compliance?
No - JAN1N5806URS/TR uses standard tin/lead (Sn/Pb) terminations per MIL-STD-750 and is not RoHS compliant. RoHS-compliant matte tin terminations are only available on commercial-grade versions (e.g., 1N5806URS without JAN prefix), which lack military qualification and are not screened to MIL-PRF-19500/477. JAN1N5806URS/TR retains Sn/Pb for proven solder joint reliability under thermal shock and vibration.
How is the cathode identified on JAN1N5806URS/TR?
The cathode of JAN1N5806URS/TR is marked by a visible color band painted on the glass body, consistent with JEDEC DO-213AA outline and MIL-STD-130 marking standards. Per Microsemi T4-LDS-0211-1, the band is applied adjacent to the round end cap (cathode terminal), and its position is verified during visual inspection per MIL-STD-883 Method 2014. This marking remains legible after 260 °C solder reflow and 1000-hour 125 °C bias life testing.
What is the thermal resistance path for JAN1N5806URS/TR?
JAN1N5806URS/TR specifies a junction-to-end-cap thermal resistance (RθJEC) of 13 °C/W, measured from the silicon die to the outer surface of either end cap. This value assumes direct metal-to-metal contact between the end cap and a thermally conductive chassis or heatsink - not PCB copper. The URS asymmetric geometry allows optimized thermal mounting: the square end cap (anode) is typically used for mechanical anchoring and thermal interface, while the round banded end cap (cathode) serves as the primary electrical output node.
Is JAN1N5806URS/TR suitable for avalanche energy clamping applications?
Yes - JAN1N5806URS/TR is characterized for controlled avalanche operation with a peak reverse power capability of 175 W (per Electrical Characteristics table), validated under conditions matching IEC 61000-4-5 surge waveforms. Its Category 1 metallurgical bond and quadruple-layer passivation ensure repeatable, non-destructive avalanche behavior over >105 cycles. This makes JAN1N5806URS/TR appropriate for transient suppression in high-voltage switch-mode supplies where active clamps are impractical.
JAN1N5806URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 150 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
- Operating Temperature - Junction:
- -65°C ~ 175°C
JAN1N5806URS/TR FAQ
1.How can I place an order for JAN1N5806URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5806URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5806URS/TR reliable?
The price and inventory of JAN1N5806URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5806URS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5806URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5806URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5806URS/TR?
JAN1N5806URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5806URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5806URS/TR?
For technical support, including JAN1N5806URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5806URS/TR requirements.
6.How does Aetrix verify that JAN1N5806URS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5806URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5806URS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5806URS/TR?
All JAN1N5806URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5806URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5806URS/TR part is unused and in its original packaging.
Return procedure for JAN1N5806URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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