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Microchip Technology JAN1N5807URS/TR
- Part No.:
- JAN1N5807URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JAN1N5807URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:4,475
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Product details
Overview
JAN1N5807URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) MELF package, rated for 50 V working peak reverse voltage, 6.0 A average rectified output current at 75 °C case temperature, and 30 ns reverse recovery time-used in high-reliability switching power supplies and radiation-hardened systems.
For engineers reviewing the JAN1N5807URS/TR datasheet, JAN1N5807URS/TR pinout, JAN1N5807URS/TR application, or JAN1N5807URS/TR equivalent, this page delivers verified electrical specs, thermal resistance (6.5 °C/W junction-to-end-cap), hermetic void-less glass construction, Category 1 metallurgical bond, and MIL-PRF-19500/477 qualification levels (JAN).
Technical Context
This diode operates as a unidirectional power rectifier with controlled avalanche capability and low thermal resistance. Its 30 ns trr, 0.875 V max forward voltage at 4 A pulse, and 125 A surge rating support high-frequency switching in hardened DC-DC converters.
The URS package features tungsten slugs and tin/lead terminals, enabling reliable soldering at 260 °C for 10 s. Its hermetic void-less glass body ensures long-term stability under thermal cycling and radiation exposure per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 50 V - maximum continuous reverse voltage before breakdown in operation |
| IO1 @ TL = 75 °C | 6.0 A - sustained average forward current with 3/8″ lead length and end-cap cooling |
| trr | 30 ns - fast charge removal enabling >1 MHz switching without excessive switching loss |
| RθJEC | 6.5 °C/W - low thermal resistance from junction to end-cap, critical for high-power density layouts |
| IFSM | 125 A - peak non-repetitive surge current tolerance for line transient protection |
| VFM @ 4 A | 0.875 V - low conduction loss improving efficiency in high-current rectification stages |
| CJ @ 10 V | 60 pF - minimal junction capacitance reducing high-frequency noise coupling |
Pinout & Package
Package: URS-style MELF (one square end cap, one round end cap), hermetically sealed void-less hard glass with tungsten slugs, blue body marking, cathode indicated by band, weight 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input source side; accepts up to 6.0 A average current with <0.875 V drop |
| Cathode | Forward current exit / reverse blocking terminal | Marked by color band; withstands 50 V reverse bias and supports controlled avalanche at peak power |
Key Features
| Feature | Design Value |
|---|---|
| Void-less hermetic glass seal | Prevents moisture ingress and internal corrosion, ensuring >20-year reliability in space-grade environments |
| Category 1 metallurgical bond | High-strength internal interconnect resistant to thermal shock and mechanical stress during reflow |
| Quadruple-layer passivation | Enhanced surface insulation preventing leakage paths under high humidity or contamination |
| MIL-PRF-19500/477 qualification | JAN level certification confirms compliance with military screening, burn-in, and lot traceability requirements |
| Controlled avalanche capability | Enables safe clamping of inductive kickback without catastrophic failure in flyback or snubber circuits |
Applications
| Aerospace Power Conversion | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: DC-DC conversion in satellite bus power distribution units requiring zero-failure operation over 15+ years. IC Role / Device Role / Timing Role: Ultrafast rectifier in synchronous buck-derived topologies handling 50 V input rails. Use Value: 30 ns trr minimizes reverse recovery loss; hermetic seal prevents parametric drift in vacuum/thermal-cycling conditions. | Use Scenario: High-pulse-power modulator supplies feeding magnetron or klystron drivers in ground-based radar systems. IC Role / Device Role / Timing Role: Output rectifier in resonant LLC or phase-shifted full-bridge inverters operating at 100–500 kHz. Use Value: 125 A IFSM sustains repetitive pulsed loads; 6.5 °C/W RθJEC enables compact heatsinking on aluminum chassis. |
| Rad-Hard Industrial Control | Nuclear Instrumentation Front-Ends |
Use Scenario: Rectification stage in safety-critical PLC power modules deployed in reactor containment zones. IC Role / Device Role / Timing Role: Input-stage AC/DC rectifier with controlled avalanche for overvoltage suppression during grid transients. Use Value: Inherent radiation hardness (per MicroNote 050) avoids SEU-induced parameter shift; 50 V VRWM matches 48 V nominal industrial bus. | Use Scenario: Signal conditioning and bias supply rectification in gamma spectroscopy detector front-ends exposed to neutron flux. IC Role / Device Role / Timing Role: Low-noise, low-leakage rectifier for precision HV bias generation (<5 µA IR at VRWM). Use Value: 5 µA max reverse current at 50 V ensures stable bias; blue-marked body enables visual inspection in confined enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5807US | Same die, US package (two square end caps); identical electrical specs but different mechanical footprint | Requires PCB pad layout revision due to dual-square geometry vs. URS asymmetric shape | Select when board space allows standard MELF symmetry and JEDEC-compliant tape-and-reel handling is preferred |
| JANTX1N5807URS | Identical URS package and electrical performance; differs only in screening level (JANTX vs JAN) | JANTX includes additional temperature cycling and life test screening beyond JAN baseline | Choose for programs requiring extended reliability validation where JAN-level qualification is insufficient |
Compared with 1N5807US and JANTX1N5807URS, the JAN1N5807URS/TR offers the optimal balance of MIL-qualified robustness, asymmetric URS mounting compatibility, and cost-effective JAN-level screening-making it ideal for volume-deployed aerospace avionics where mechanical fit and qualification depth are jointly constrained.
Availability
JAN1N5807URS/TR is available at Aetrix Electronics and suitable for aerospace power conversion, military radar transmitter supplies, and rad-hard industrial control requiring stable component supply across extended product lifecycles.
Supply support for JAN1N5807URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets.
The JAN1N5807URS/TR belongs to Microsemi's military-qualified ultrafast rectifier family, engineered specifically for applications demanding hermetic sealing, radiation tolerance, and guaranteed performance across -65 °C to +175 °C.
FAQ
What is the maximum junction temperature rating for JAN1N5807URS/TR?
The JAN1N5807URS/TR has a specified junction and storage temperature range of -65 °C to +175 °C. This wide operating envelope supports deployment in extreme environments such as spacecraft thermal vacuum chambers and nuclear facility instrumentation. The 175 °C upper limit is validated under MIL-PRF-19500/477 screening and directly enables high-temperature derating strategies in enclosed power modules where ambient may exceed 100 °C.
Is JAN1N5807URS/TR RoHS compliant?
No, JAN1N5807URS/TR is not RoHS compliant. Per the Microsemi datasheet T4-LDS-0168-1, RoHS-compliant versions (marked e3) are available only for commercial-grade variants-not for JAN-level qualified parts like JAN1N5807URS/TR. The JAN1N5807URS/TR uses traditional tin/lead (Sn/Pb) terminations required for military reflow profiles and long-term solder joint reliability under thermal cycling.
What does "URS" signify in JAN1N5807URS/TR?
"URS" denotes the package configuration: one square end cap and one round end cap, distinguishing it from the "US" variant (two square end caps). This asymmetric geometry affects PCB pad layout and mechanical retention. The URS form factor is explicitly defined in the datasheet's Part Nomenclature section and confirmed in Package Dimensions (Page 5), where Note 8 states: "On 'URS' one end cap shall be square and the other end cap shall be round."
How does the thermal resistance of JAN1N5807URS/TR compare between junction-to-end-cap and junction-to-ambient?
JAN1N5807URS/TR specifies RθJEC = 6.5 °C/W (junction-to-end-cap) and RθJX = 52 °C/W (junction-to-ambient). The 8× difference highlights that effective thermal design requires direct end-cap contact with a heatsink or thermally conductive chassis. Without such attachment, ambient-limited operation restricts average current to ~1.2 A at TA = 55 °C-versus the full 6.0 A IO1 rating achievable with proper end-cap cooling.
Can JAN1N5807URS/TR replace JAN1N5807 in through-hole designs?
No, JAN1N5807URS/TR cannot directly replace axial-leaded JAN1N5807. The URS designation indicates a surface-mount MELF package with asymmetric end caps, while JAN1N5807 is an axial-leaded device. Their footprints, mounting methods, and thermal paths are incompatible. For through-hole alternatives, consider JAN1N5807 (axial) or JAN1N5807US (SMD, dual-square), not URS.
JAN1N5807URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 50 V
- Capacitance @ Vr, F:
- 60pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
JAN1N5807URS/TR FAQ
1.How can I place an order for JAN1N5807URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5807URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5807URS/TR reliable?
The price and inventory of JAN1N5807URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5807URS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5807URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5807URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5807URS/TR?
JAN1N5807URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5807URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5807URS/TR?
For technical support, including JAN1N5807URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5807URS/TR requirements.
6.How does Aetrix verify that JAN1N5807URS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5807URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5807URS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5807URS/TR?
All JAN1N5807URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5807URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5807URS/TR part is unused and in its original packaging.
Return procedure for JAN1N5807URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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