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Microchip Technology JAN1N5807US/TR
- Part No.:
- JAN1N5807US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JAN1N5807US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:2,066
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Product details
Overview
JAN1N5807US/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in hermetically sealed "B" MELF package, rated for 6.0 A average forward current at 75 °C, 50 V working peak reverse voltage, and 30 ns reverse recovery time-designed for high-reliability switching power supplies and radiation-hardened aerospace systems.
For engineers reviewing the JAN1N5807US/TR datasheet, JAN1N5807US/TR pinout, JAN1N5807US/TR application, or JAN1N5807US/TR equivalent, key selection criteria include its MIL-PRF-19500/477 JAN-level qualification, void-less glass construction, Category 1 metallurgical bond, 6.5 °C/W junction-to-end-cap thermal resistance, and compatibility with high-surge-current (125 A) transient conditions.
Technical Context
This diode implements an ultrafast recovery structure optimized for low forward voltage drop (0.875 V max at 4 A pulse) and controlled avalanche capability up to peak reverse power limits. Its hard-glass hermetic seal with tungsten slugs ensures mechanical robustness and long-term reliability under thermal cycling and radiation exposure.
The device operates across –65 °C to +175 °C junction temperature range and exhibits 60 pF junction capacitance at 10 V reverse bias and 1 MHz. Its reverse recovery time of 30 ns is measured under standardized conditions: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A, and di/dt ≥ 100 A/µs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 50 V - Maximum sustainable reverse voltage across full operating temperature range without breakdown |
| IO1 @ TL=75 °C | 6.0 A - Continuous average forward current rating with end-cap heatsinking at 75 °C |
| trr | 30 ns - Time required to transition from forward conduction to reverse blocking state under defined test conditions |
| VFM @ 4 A | 0.875 V - Maximum forward voltage drop during pulsed operation, directly impacting conduction loss |
| RθJEC | 6.5 °C/W - Thermal resistance from junction to end-cap, critical for mounting on heat-conductive substrates |
| IFSM | 125 A - Peak non-repetitive surge current handling capability for 8.3 ms half-sine pulses |
| CJ @ 10 V | 60 pF - Junction capacitance affecting high-frequency switching noise and EMI behavior |
Pinout & Package
Package: Hermetically sealed "B" MELF (Metal Electrode Leadless Face) with two square end caps, void-less hard glass body, tungsten slugs, and cathode indicated by blue band. Weight: 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (end cap) | Forward current entry point | Electrically connected to internal P+ region; requires low-impedance thermal path via end-cap soldering |
| Cathode (end cap with blue band) | Forward current exit / reverse voltage terminal | Marked terminal; connects to N-type epitaxial layer; must be isolated from adjacent conductors at VRWM |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic void-less glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year mission life in vacuum or humid environments |
| Category 1 metallurgical bond | Ensures mechanical integrity and thermal stability under shock, vibration, and rapid thermal transients per MIL-STD-883 |
| Quadruple-layer passivation | Provides surface leakage suppression and enhanced dielectric strength at high electric field gradients |
| JAN-level qualification | Fully tested and certified to MIL-PRF-19500/477 for use in Class S spaceflight and nuclear command systems |
| Controlled avalanche capability | Enables safe clamping of inductive turn-off transients without catastrophic failure up to specified peak reverse power |
Applications
| Spacecraft Power Distribution | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: DC-DC converter output rectification in satellite bus power systems exposed to total ionizing dose >100 krad(Si). IC Role / Device Role / Timing Role: Ultrafast recovery rectifier providing low-loss, radiation-hardened AC-to-DC conversion with no parameter shift after irradiation. Use Value: Maintains 0.875 V forward drop and 30 ns trr post-irradiation, enabling stable 6 A output regulation without derating. | Use Scenario: Pulse-forming network (PFN) charging circuit in ground-based phased-array radar transmitters. IC Role / Device Role / Timing Role: High-surge rectifier handling repetitive 125 A, 8.3 ms surges during modulator discharge cycles. Use Value: Withstands 125 A IFSM without bond wire lift or glass fracture, ensuring >10⁶ shot lifetime under thermal cycling. |
| Aerospace Avionics DC/DC Modules | Nuclear Command & Control Systems |
Use Scenario: Input rectification stage in compact, conduction-cooled 28 V to ±15 V isolated converters for flight control computers. IC Role / Device Role / Timing Role: Surface-mount ultrafast diode mounted directly to aluminum baseplate via end-cap soldering. Use Value: 6.5 °C/W RθJEC enables direct thermal coupling to chassis, limiting junction rise to <40 °C at 6 A continuous load. | Use Scenario: Redundant power supply rectification in hardened underground command bunkers requiring guaranteed operation after EMP events. IC Role / Device Role / Timing Role: MIL-qualified rectifier with controlled avalanche and hermetic seal preventing latent failure modes. Use Value: Survives 100 kV/m EMP-induced transients due to low capacitance (60 pF), high VRWM (50 V), and robust metallurgical interface. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5807US (commercial grade) | No JAN-level screening; lower test coverage; not qualified to MIL-PRF-19500/477 | Suitable for non-mission-critical industrial power supplies where radiation hardness and extended temperature range are not required | Select only when cost sensitivity outweighs reliability requirements and full MIL qualification is unnecessary |
| JANTX1N5807US/TR | Same die and package but screened to JANTX level (higher test sample size, extended burn-in, tighter parametric limits) | Used in airborne platforms where partial radiation tolerance and higher confidence in early-life failure rate are mandated | Choose when system-level reliability targets exceed JAN but do not require full space-grade JANS qualification |
Compared with JAN1N5807US/TR, the commercial 1N5807US lacks military screening and environmental testing, while JANTX1N5807US/TR adds statistical process control and accelerated life testing-making the JAN version optimal for baseline spaceflight and nuclear command systems where absolute failure avoidance is non-negotiable.
Availability
JAN1N5807US/TR is available at Aetrix Electronics and suitable for spacecraft power distribution, military radar transmitter supplies, and nuclear command & control systems requiring stable component supply with guaranteed long-term obsolescence management.
Supply support for JAN1N5807US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor manufacturer specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
The JAN1N5807US/TR belongs to Microsemi's ultrafast glass rectifier product line, engineered specifically for mission-critical applications demanding hermetic sealing, radiation hardness, and MIL-qualified reliability across extreme temperature and shock environments.
FAQ
What does the "JAN" prefix signify in JAN1N5807US/TR?
The "JAN" prefix indicates that JAN1N5807US/TR is fully qualified to MIL-PRF-19500/477 Level JAN, including 100% electrical screening, extended temperature testing (–65 °C to +175 °C), and hermeticity validation. This certification confirms suitability for spaceflight and strategic defense systems where zero-tolerance for latent defects is mandatory. JAN1N5807US/TR undergoes stricter lot acceptance testing than commercial or JANTX variants.
Is JAN1N5807US/TR RoHS compliant?
No, JAN1N5807US/TR is not RoHS compliant. The "e3" RoHS designation applies only to commercial-grade versions (e.g., 1N5807US). JAN1N5807US/TR uses Sn/Pb terminations per MIL-STD-750 Method 2087 and is exempt from RoHS under EU Directive 2011/65/EU Annex III for military and space applications requiring lead-based solder compatibility and proven long-term reliability.
What is the meaning of "US" in the part number JAN1N5807US/TR?
The "US" suffix in JAN1N5807US/TR denotes the "B" MELF surface-mount package with two square end caps and void-less hermetic glass construction. It distinguishes this variant from axial-leaded (no suffix) and URS (one square + one round end cap) configurations. The "TR" indicates tape-and-reel packaging per EIA-296 standard, enabling automated placement in high-reliability assembly lines.
How does the 6.5 °C/W RθJEC value impact thermal design for JAN1N5807US/TR?
The 6.5 °C/W junction-to-end-cap thermal resistance means that for every watt dissipated, the junction rises 6.5 °C above the end-cap temperature. To maintain TJ ≤ 175 °C at 6 A (≈5.3 W at 0.875 V), the end-cap must stay below 138 °C. This requires direct soldering to copper pads with ≥0.288″ × 0.155″ FR4 area and ≥2 oz copper, as validated in Figure 3 of the JAN1N5807US/TR datasheet.
Can JAN1N5807US/TR replace JAN1N5809US/TR or JAN1N5811US/TR in a design?
No-JAN1N5807US/TR has a 50 V VRWM rating and cannot substitute for JAN1N5809US/TR (100 V) or JAN1N5811US/TR (150 V) in circuits exposed to higher reverse voltages. While all share identical trr (30 ns), VF (0.875 V), and IFSM (125 A), exceeding VRWM risks premature breakdown. Substitution requires full revalidation of reverse voltage margin, especially under transient conditions like load dump or inductive kickback.
JAN1N5807US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 50 V
- Capacitance @ Vr, F:
- 60pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
JAN1N5807US/TR FAQ
1.How can I place an order for JAN1N5807US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5807US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5807US/TR reliable?
The price and inventory of JAN1N5807US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5807US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5807US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5807US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5807US/TR?
JAN1N5807US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5807US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5807US/TR?
For technical support, including JAN1N5807US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5807US/TR requirements.
6.How does Aetrix verify that JAN1N5807US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5807US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5807US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5807US/TR?
All JAN1N5807US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5807US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5807US/TR part is unused and in its original packaging.
Return procedure for JAN1N5807US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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