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Microchip Technology JAN1N5809URS/TR
- Part No.:
- JAN1N5809URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JAN1N5809URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:5,724
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Product details
Overview
JAN1N5809URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) MELF package, rated for 100 V working peak reverse voltage, 6.0 A average rectified output current at 75 °C, and 30 ns reverse recovery time. It serves as a high-reliability power conversion component in radiation-hardened and mission-critical DC power supplies.
For engineers reviewing the JAN1N5809URS/TR datasheet, JAN1N5809URS/TR pinout, JAN1N5809URS/TR application, or JAN1N5809URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 qualification level (JAN), hermetically sealed void-less glass construction, Category 1 metallurgical bond, and 125 A forward surge current capability under standardized 8.3 ms pulse conditions.
Technical Context
This device belongs to Microsemi's ultrafast recovery rectifier family designed for high-reliability switching applications where low forward voltage drop and rapid turn-off are critical. Its 30 ns reverse recovery time and 0.875 V max forward voltage at 4 A enable efficient operation in high-frequency SMPS topologies.
The URS package features a hermetically sealed void-less glass body with tungsten slugs and tin/lead terminals, delivering 6.5 °C/W junction-to-end-cap thermal resistance and -65 °C to +175 °C operating temperature range - essential for aerospace and defense systems requiring long-term stability under thermal cycling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 100 V - Maximum continuous reverse voltage before breakdown; defines safe blocking capability in DC-link and flyback circuits. |
| IO1 @ TL=75°C | 6.0 A - Sustained average forward current with 3/8″ lead length; sets baseline conduction rating for thermal design. |
| trr | 30 ns - Time to recover from forward to reverse state; enables >1 MHz switching without excessive switching loss. |
| VF @ 4 A | 0.875 V max - Low forward voltage minimizes conduction loss and improves efficiency in high-current paths. |
| IFSM | 125 A - Peak non-repetitive surge current handling; supports robust inrush and fault tolerance in power converters. |
| RθJEC | 6.5 °C/W - Junction-to-end-cap thermal resistance; enables direct heatsinking via end caps in compact layouts. |
| CJ @ 10 V | 60 pF - Junction capacitance at 1 MHz; impacts EMI filtering and high-frequency snubber design. |
Pinout & Package
Package: URS-type MELF (one square end cap, one round end cap), hermetically sealed void-less glass with tungsten slugs, cathode indicated by blue band. Weight: 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (square end cap) | Forward current entry point | Connects to input source side; compatible with standard MELF anode-down mounting on copper pads. |
| Cathode (round end cap, banded) | Forward current exit / reverse blocking terminal | Marked with blue band; functions as output node in rectification; requires thermal pad connection for optimal RθJEC performance. |
Key Features
| Feature | Design Value |
|---|---|
| Void-less hermetic glass seal | Eliminates internal moisture and particle ingress, ensuring 100% reliability over 20+ year lifetimes in vacuum and radiation environments. |
| Category 1 metallurgical bond | Provides mechanical and electrical integrity under shock, vibration, and thermal stress per MIL-STD-750 Method 2074. |
| Quadruple-layer passivation | Prevents surface leakage and corrosion at high humidity or salt fog exposure, critical for naval and airborne platforms. |
| Controlled avalanche capability | Withstands transient reverse energy up to peak reverse power limit without degradation, enabling use in clamping and snubbing roles. |
| Inherent radiation hardness | Validated per MicroNote 050; no parametric shift after 100 krad(Si) total ionizing dose, suitable for LEO and GEO satellites. |
Applications
| Spacecraft Power Distribution | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: Rectifying secondary winding outputs in satellite DC-DC converters operating in vacuum and extreme thermal cycles. IC Role / Device Role / Timing Role: Ultrafast power rectifier with radiation-tolerant construction and stable trr across -65 °C to +175 °C. Use Value: Enables uninterrupted power delivery during orbital eclipse periods with zero latent failure risk due to hermetic sealing and Category 1 bonding. | Use Scenario: Output stage rectification in pulsed radar modulator power supplies subject to high dv/dt and EMI. IC Role / Device Role / Timing Role: High-surge-current rectifier with 125 A IFSM and 30 ns trr to minimize switching noise and transformer reset distortion. Use Value: Reduces snubber losses and improves pulse fidelity versus standard fast recovery diodes, extending tube life and system MTBF. |
| Aerospace Avionics DC/DC Modules | Nuclear Instrumentation Front-End Supplies |
Use Scenario: Input rectification in triple-redundant 28 V aircraft bus converters requiring zero field failures. IC Role / Device Role / Timing Role: JAN-level qualified rectifier with MIL-PRF-19500/477 compliance and full traceability. Use Value: Meets DO-254/DO-160G Section 22 requirements for lightning-induced transient immunity and thermal survivability. | Use Scenario: Bias supply rectification in gamma spectroscopy detector front-ends exposed to neutron flux. IC Role / Device Role / Timing Role: Radiation-hardened rectifier with inherent TID tolerance and low leakage (<5 µA at VRWM). Use Value: Maintains signal-to-noise ratio by preventing dark current drift caused by radiation-induced leakage in precision analog chains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5809US | Same die, US package (two square end caps); RθJEC = 7.0 °C/W vs 6.5 °C/W; identical electrical specs. | Surface-mount footprint differs - US uses dual-square pads; URS requires asymmetric pad layout for mixed geometry. | Select 1N5809US only if board layout supports symmetric MELF mounting and thermal derating allows 0.5 °C/W higher impedance. |
| JANTXV1N5809URS | Identical URS package and electrical parameters; differs only in screening level (JANTXV includes burn-in, life test, and extended environmental testing). | Required for Class H/V avionics where 100% lot acceptance testing and failure analysis traceability are mandated. | Choose JANTXV1N5809URS when program specifications require JANTXV-level reliability assurance beyond JAN baseline. |
Compared with 1N5809US and JANTXV1N5809URS, the JAN1N5809URS/TR offers the optimal balance of MIL-qualified reliability, asymmetric thermal pad compatibility, and cost-effective JAN-level screening - making it ideal for space-qualified subsystems where asymmetric heatsinking and full traceability are required without JANTXV overhead.
Availability
JAN1N5809URS/TR is available at Aetrix Electronics and suitable for spacecraft power distribution, military radar transmitter supplies, and aerospace avionics DC/DC modules requiring stable component supply across extended production lifecycles.
Supply support for JAN1N5809URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discretes, and RF solutions for aerospace, defense, and industrial markets.
The JAN1N5809URS/TR belongs to Microsemi's military-qualified ultrafast rectifier product line, engineered specifically for mission-critical power conversion where hermeticity, radiation tolerance, and guaranteed lifetime performance supersede commercial cost targets.
FAQ
What is the maximum junction temperature rating for JAN1N5809URS/TR?
The JAN1N5809URS/TR has a specified junction and storage temperature range of -65 °C to +175 °C. This wide operating envelope supports deployment in extreme environments such as satellite payload bays and jet engine-mounted electronics. The 175 °C upper limit is validated under MIL-PRF-19500/477 test conditions and must be respected in thermal modeling to ensure long-term reliability of the Category 1 metallurgical bond within the JAN1N5809URS/TR.
Is JAN1N5809URS/TR RoHS compliant?
No, the JAN1N5809URS/TR is not RoHS compliant. Per the Microsemi datasheet T4-LDS-0168-1, RoHS-compliant versions (marked e3) are available only for commercial-grade variants. The JAN1N5809URS/TR uses tin/lead (Sn/Pb) terminations as required for military soldering processes and high-reliability interconnects, consistent with its JAN qualification level and MIL-PRF-19500/477 compliance.
How does the URS package differ mechanically from the US package in JAN1N5809URS/TR?
The URS package of the JAN1N5809URS/TR features one square end cap and one round end cap, whereas the US variant uses two square end caps. This asymmetry enables optimized thermal path design - the square cap typically interfaces with a larger copper pour while the round cap mates with a smaller thermal relief. Both share identical electrical characteristics and hermetic glass construction, but URS requires custom pad layout per Microsemi's Package Dimensions drawing on page 5 of T4-LDS-0168-1.
What is the reverse recovery time test condition for JAN1N5809URS/TR?
The reverse recovery time (trr) of 30 ns for JAN1N5809URS/TR is measured under the conditions: IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A, and di/dt ≥ 100 A/µs. These standardized test parameters ensure consistency across MIL-qualified devices and reflect real-world switching behavior in hard-commutated converters. The value is guaranteed across the full -65 °C to +125 °C operating range per the Electrical Characteristics table on page 2 of the datasheet.
Can JAN1N5809URS/TR be used in avalanche mode?
Yes, JAN1N5809URS/TR is characterized for controlled avalanche operation with defined peak reverse power capability. Its structure supports repetitive avalanche energy dissipation without parametric shift, provided the single-pulse avalanche energy (EAS) remains within limits derived from its 125 A IFSM rating and 100 V VRWM. This makes the JAN1N5809URS/TR suitable for passive clamping in inductive load switching circuits where active protection is impractical.
JAN1N5809URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 100 V
- Capacitance @ Vr, F:
- 60pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
JAN1N5809URS/TR FAQ
1.How can I place an order for JAN1N5809URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N5809URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N5809URS/TR reliable?
The price and inventory of JAN1N5809URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N5809URS/TR is usually 5 days.
3.What payment methods are accepted for JAN1N5809URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N5809URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N5809URS/TR?
JAN1N5809URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N5809URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N5809URS/TR?
For technical support, including JAN1N5809URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N5809URS/TR requirements.
6.How does Aetrix verify that JAN1N5809URS/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N5809URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N5809URS/TR meets industry standards.
7.What is the process for return or replacement of JAN1N5809URS/TR?
All JAN1N5809URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N5809URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N5809URS/TR part is unused and in its original packaging.
Return procedure for JAN1N5809URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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