Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Semtech Corporation JAN1N6472US

Part No.:
JAN1N6472US
Manufacturer:
Semtech Corporation
Category:
TVS Diodes
Package:
SQ-MELF
Datasheet:
AetrixJAN1N6472US.pdf
Description:
T DAP UNI 1500W 15V
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,032

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JAN1N6472US from Semtech is a transient diverting suppressor (TDS) designed for high-energy EOS protection of 22V-rated power or I/O lines, featuring ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), 27.5–28V clamping voltage at 40A, and ultra-low 20mΩ dynamic resistance. It protects USB PD, USB Type-C VBus, and load switch inputs in industrial and portable electronics.

For engineers reviewing the JAN1N6472US datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, DFN-6 package layout guidance, real-world clamping stability across temperature and current, and direct alternatives for 22V bus protection design.

Technical Context

The JAN1N6472US uses a surge-rated FET as its primary protection element, activated by a precision trigger circuit that turns on the shunt path when transient voltage exceeds breakdown. Unlike conventional TVS diodes, its clamping voltage remains nearly constant-27.5–28V-from 24A to 40A and across –40°C to +125°C due to decreasing RDS(on) under surge.

It operates with reverse stand-off voltage of 22V, breakdown voltage of 25–27.9V, and junction capacitance of 175pF at 22V/1MHz. Its 6-pin DFN package integrates three parallel input terminals (pins 4–6) and three ground terminals (pins 1–3), requiring all pins to be connected for full 40A rating and minimal parasitic inductance.

Key Specifications

Parameter Value and Actual Design Meaning
Working Voltage 22V reverse stand-off-supports nominal 20V USB PD VBus without leakage or false triggering.
Clamping Voltage 27.5–28V at 40A (8/20μs + 1.2/50μs combo waveform)-holds below 28V across full surge range, protecting 30V-tolerant controllers.
Peak Pulse Current 40A (8/20μs)-meets IEC 61000-4-5 Level 4 surge immunity for industrial equipment interfaces.
ESD Withstand ±30kV contact & air (IEC 61000-4-2)-exceeds Level 4 requirements for handheld and connector-exposed designs.
Dynamic Resistance 20mΩ (8/20μs, 1–40A)-enables flat clamping curve and minimizes voltage overshoot during fast transients.
Junction Capacitance 175pF at 22V/1MHz-compatible with DC/low-speed power rails; not intended for high-speed data lines.
Operating Temp –40°C to +125°C-maintains stable clamping and leakage (<600nA) across automotive and industrial ambient ranges.

Pinout & Package

Package: DFN 1.6mm × 1.6mm × 0.55mm, 6-lead, Pb-free, RoHS/WEEE compliant, UL 94V-0 molding compound.

Pin/Terminal Circuit Role Design Meaning
Pins 1, 2, 3 GND Three parallel ground terminals-must all be connected to low-inductance ground plane via multiple vias for full 40A surge handling.
Pins 4, 5, 6 IN Three parallel input terminals-connect directly to protected line (e.g., USB PD VBus); all must be routed together to minimize imbalance.

Key Features

Feature Design Value
Constant-clamp architecture Clamping voltage stays within 27.5–28V from 24A to 40A-eliminates derating needed with traditional TVS diodes.
FET-based shunt protection Surge energy diverted through low-RDS(on) FET-not dissipated in PN junction-enabling higher reliability at elevated temperatures.
Multi-terminal parallel layout Three-input/three-ground configuration reduces effective trace inductance and distributes surge current, improving robustness vs. single-pin devices.
Temperature-stable performance Clamping voltage variation <0.5V from –40°C to +125°C-enables predictable protection in uncontrolled thermal environments.

Applications

USB Type-C Power Delivery Bus Protection Industrial Load Switch Input Protection

Use Scenario: Protecting 20V USB PD VBus lines against lightning surges, ESD, and EOS events in docking stations and host controllers.

IC Role / Device Role / Timing Role: Transient diverting suppressor placed at connector entry point to clamp overvoltage before reaching PD controller ICs.

Use Value: Maintains clamping at ≤28V across full 40A surge and –40°C to +125°C-prevents damage to 30V-rated PD controllers without over-spec'ing IPP.

Use Scenario: Safeguarding enable and input pins of high-side load switches (e.g., HS2950P) in remote meters and robotics.

IC Role / Device Role / Timing Role: Primary front-end EOS protector for load switch VIN/EN nodes exposed to field wiring transients.

Use Value: Limits clamping to 28V-below typical 30–36V FET drain-source breakdown-preserving switch integrity during 1kV/42Ω surges.

IoT Device Power Rail Protection Notebook/Tablet DC Power Input Protection

Use Scenario: Securing 12–24V DC input rails in battery-powered IoT gateways subjected to ESD during hot-plug or connector mating.

IC Role / Device Role / Timing Role: Solid-state transient suppressor replacing bulkier TVS arrays on main power entry points.

Use Value: 1.6×1.6mm DFN footprint saves >60% board area vs. discrete 22V TVS solutions while delivering superior clamping consistency.

Use Scenario: Protecting adapter-input power paths in thin client notebooks where space and thermal margin are constrained.

IC Role / Device Role / Timing Role: Single-component 22V rail protector for AC/DC adapter interface, co-located with input capacitor.

Use Value: 20mΩ dynamic resistance ensures minimal voltage rise during fast 8/20μs surges-reducing risk of upstream regulator latch-up or brownout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
TDS2211P.C Identical electrical specs, same DFN-6 package, and identical marking code "T22"-JAN1N6472US is the military-grade qualified variant of TDS2211P.C. TDS2211P.C is commercial-grade; JAN1N6472US meets MIL-PRF-19500/560 requirements for screening and environmental testing. Select JAN1N6472US for defense, aerospace, or high-reliability industrial programs requiring extended temperature validation and lot traceability.
SMAJ22A Standard 22V unidirectional TVS diode; clamps at ~38V @ 24A (125°C), 600mΩ dynamic resistance, 1000W peak power, DO-214AC package. Larger footprint (4.3×2.6mm), higher clamping, and strong temperature dependence-requires derating above 85°C. Choose SMAJ22A only if legacy board space allows larger package and clamping >35V is acceptable for downstream components.

Compared with TDS2211P.C, JAN1N6472US offers identical protection performance with enhanced reliability screening; versus SMAJ22A, it delivers 10.5V lower clamping at full surge, 30× lower dynamic resistance, and 75% smaller footprint-making it optimal for space-constrained, thermally aggressive, or high-reliability 22V rail protection.

Availability

JAN1N6472US is available at Aetrix Electronics and suitable for USB Type-C PD systems, industrial load switch interfaces, and IoT power rail protection requiring stable component supply, long-term lifecycle support, and MIL-qualified assurance.

Supply support for JAN1N6472US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Semtech Corporation is a U.S.-based fabless semiconductor company specializing in high-performance analog and mixed-signal ICs for power management, protection, sensing, and signal integrity.

JAN1N6472US belongs to Semtech's Transient Diverting Suppressor (TDS) product line-engineered to replace conventional TVS diodes in high-reliability 22V power rail protection with flat-clamp FET-based architecture.

FAQ

What is the key functional difference between JAN1N6472US and standard TVS diodes?

JAN1N6472US uses a surge-rated FET and precision trigger circuit instead of a PN junction, resulting in near-constant 27.5–28V clamping from 24A to 40A and minimal variation across –40°C to +125°C. Standard TVS diodes exhibit rising clamping voltage with increasing current and temperature due to fixed dynamic resistance-JAN1N6472US avoids this limitation entirely.

Does JAN1N6472US require external bias or control signals to operate?

No. JAN1N6472US is fully passive and self-triggering: it activates automatically when transient voltage exceeds its internal breakdown threshold (~25–27.9V). No external power, enable pins, or configuration are needed-JAN1N6472US functions as a two-terminal device with pins 1–3 as GND and pins 4–6 as IN.

Can JAN1N6472US be used on high-speed data lines like USB SuperSpeed or PCIe?

No. With 175pF junction capacitance at 22V, JAN1N6472US is intended solely for DC or low-frequency power and control lines-not signal integrity-critical data paths. For USB SS, DP/DM, or CC lines, Semtech recommends low-capacitance devices like RClamp3371ZC (<0.25pF) or uClamp2411ZA-JAN1N6472US must be used only on VBus or load switch inputs.

What PCB layout practices are critical for achieving full 40A surge rating with JAN1N6472US?

To achieve rated 40A performance, all three GND pins (1–3) must connect to a solid ground plane using ≥3 vias each, and all three IN pins (4–6) must be routed as a single low-inductance trace from the connector. JAN1N6472US must be placed within 5mm of the protected port-any longer trace adds series inductance that degrades clamping response and increases overshoot.

Is JAN1N6472US compatible with lead-free reflow soldering processes?

Yes. JAN1N6472US uses Pb-free terminations and is qualified for standard JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260°C. Its DFN package has UL 94V-0 flammability rating and withstands multiple reflow cycles without degradation-JAN1N6472US supports automated SMT assembly in high-volume production.

JAN1N6472US Specifications

Product attributes
Attribute value
Manufacturer:
Semtech Corporation
Package/Case:
SQ-MELF
Series:
-
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
15V
Voltage - Breakdown (Min):
16.4V
Voltage - Clamping (Max) @ Ipp:
26.5V
Current - Peak Pulse (10/1000µs):
57A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/516
Mounting Type:
Surface Mount
Supplier Device Package:
-

JAN1N6472US FAQ

1.How can I place an order for JAN1N6472US through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N6472US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N6472US reliable?

The price and inventory of JAN1N6472US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6472US is usually 5 days.

3.What payment methods are accepted for JAN1N6472US?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6472US transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N6472US?

JAN1N6472US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N6472US order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N6472US?

For technical support, including JAN1N6472US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6472US requirements.

6.How does Aetrix verify that JAN1N6472US is sourced from the original manufacturer or authorized distributors?

All JAN1N6472US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6472US meets industry standards.

7.What is the process for return or replacement of JAN1N6472US?

All JAN1N6472US units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6472US, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N6472US part is unused and in its original packaging.

Return procedure for JAN1N6472US:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JAN1N6472US Tags

  • JAN1N6472US
  • JAN1N6472US PDF
  • JAN1N6472US Datasheet
  • JAN1N6472US Specifications
  • JAN1N6472US Images
  • Semtech Corporation
  • Semtech Corporation JAN1N6472US
  • Buy JAN1N6472US
  • JAN1N6472US Price
  • JAN1N6472US Distributor
  • JAN1N6472US Supplier
  • JAN1N6472US Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER