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Microchip Technology JAN1N6623US
- Part No.:
- JAN1N6623US
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JAN1N6623US.pdf
- Description:
- DIODE GEN PURP 880V 1A D-5A
- Quantity:
- Payment:
- Shipping:
Inventory:2,256
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Product details
Overview
JAN1N6623US from Microsemi is a hermetically sealed, voidless-glass ultrafast recovery surface-mount rectifier diode rated for 1.5 A average forward current at +110°C, 800 V working peak reverse voltage, and 50 ns high-current reverse recovery time; it serves as a robust power conversion component in military-grade switching power supplies requiring radiation hardness and controlled avalanche capability.
For engineers reviewing the JAN1N6623US datasheet, JAN1N6623US pinout, JAN1N6623US application, or JAN1N6623US equivalent, this page delivers verified electrical parameters, MIL-PRF-19500/585 qualification status, thermal resistance (13°C/W), junction temperature range (–65°C to +150°C), and hermetic glass package construction details critical for high-reliability embedded and aerospace power designs.
Technical Context
This JAN1N6623US diode employs a Category I metallurgical bond within a voidless hard-glass envelope, enabling stable operation under extreme thermal cycling and radiation exposure per MicroNote 050. Its triple-layer passivation and tungsten slug construction ensure mechanical robustness and low thermal resistance.
The device operates with a maximum forward voltage of 1.55 V at 1.0 A and 1.80 V at 1.5 A, while maintaining 0.5 μA reverse leakage at 800 V and supporting 20 A non-repetitive surge current (8.3 ms half-sine). Its 10 pF junction capacitance and controlled avalanche behavior support fast-switching topologies with predictable clamping.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 800 V - Maximum continuous reverse voltage the device sustains across its operating temperature range without breakdown. |
| IF(AV) @ TEC=+110°C | 1.5 A - Average rectified forward current rating when mounted on an endcap with thermal path to heatsink. |
| trr (High Current) | 50 ns - Reverse recovery time measured at IF = 2 A, di/dt = 100 A/μs; enables efficient operation in >100 kHz SMPS. |
| VF @ 1.0 A | 1.55 V - Forward voltage drop defining conduction loss at nominal load; impacts thermal design and efficiency. |
| RθJEC | 13 °C/W - Thermal resistance from junction to endcap; determines temperature rise under steady-state power dissipation. |
| IR @ VRWM | 0.5 μA - Reverse leakage current at full rated reverse voltage and 25°C; critical for low-power standby and precision bias circuits. |
| CJ @ 10 V | 10 pF - Junction capacitance influencing high-frequency switching noise and EMI filter design. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass case with copper end caps (Sn/Pb finish), designated "Package A" or "D-5A", measuring 6.25 mm × 2.67 mm × 1.70 mm (L × W × H), weight 193 mg. Mounting uses surface-mount endcap terminations with EIA-481-B tape-and-reel standard.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input side of rectification stage; must handle 20 A surge and sustain 1.8 V drop at 1.5 A DC. |
| Cathode | Forward current exit / reverse blocking terminal | Marked by cathode band; withstands 800 V reverse bias and supports controlled avalanche up to 5.0 V peak recovery voltage. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination risk and moisture ingress, ensuring long-term reliability in vacuum or humid environments. |
| Category I metallurgical bond | Provides superior interfacial strength between silicon die and tungsten slug, preventing bond lift under thermal shock. |
| Triple-layer passivation | Enhances surface stability against ion contamination and humidity-induced leakage drift over lifetime. |
| MIL-PRF-19500/585 qualification | Validates compliance with military screening requirements including temperature cycling, burn-in, and lot acceptance testing. |
| Inherent radiation hardness | Per Microsemi MicroNote 050, exhibits no parametric shift or functional failure up to 100 krad(Si) total ionizing dose. |
Applications
| Aerospace Power Conversion | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: High-efficiency DC-DC conversion in satellite bus power systems exposed to thermal vacuum and radiation. IC Role / Device Role / Timing Role: Ultrafast rectifier in resonant LLC secondary-side synchronous rectification stage. Use Value: 50 ns trr and 13°C/W RθJEC enable >94% efficiency at 200 kHz while surviving 100 krad(Si) TID without derating. | Use Scenario: Pulse-forming network (PFN) charging in ground-based radar modulators requiring high surge tolerance. IC Role / Device Role / Timing Role: Primary high-voltage rectifier in capacitor-charging circuit with repetitive 20 A surge pulses. Use Value: 20 A IFSM (8.3 ms) and controlled avalanche behavior prevent catastrophic failure during PFN discharge transients. |
| Avionics Flight Control PSUs | Nuclear Instrumentation Power |
Use Scenario: Redundant 28 V DC power supplies for fly-by-wire actuator controllers in commercial aircraft. IC Role / Device Role / Timing Role: Input-stage bridge rectifier in isolated AC/DC front-end with strict MTBF requirements. Use Value: MIL-qualified construction and –65°C to +150°C junction range ensure zero-failure operation across flight envelope extremes. | Use Scenario: Bias supply for radiation detection sensors in nuclear reactor monitoring systems. IC Role / Device Role / Timing Role: Low-leakage (0.5 μA) high-voltage rectifier powering Geiger-Müller tube HV generators. Use Value: Sub-microamp reverse current at 800 V prevents false counts; hermetic seal blocks neutron-induced gas permeation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6623US | Same electrical specs and package; additional JANTXV-level screening per MIL-PRF-19500/585 including 100% burn-in and extended temperature testing. | Required for Class H (spaceflight) and Class K (nuclear) programs where zero latent defects are mandated. | Select JANTXV1N6623US when full MIL-PRF-19500/585 JANTXV screening is contractually required. |
| 1N6623US | Identical die and package; differs only in qualification level - commercial-grade, not MIL-qualified; no screening beyond standard lot acceptance. | Suitable for industrial prototypes or non-safety-critical avionics where cost sensitivity outweighs qualification rigor. | Choose 1N6623US for development boards or non-mission-critical subsystems with relaxed reliability requirements. |
Compared with JANTXV1N6623US and 1N6623US, the JAN1N6623US provides certified MIL-PRF-19500/585 JAN-level qualification - sufficient for most defense electronics - without the cost or lead time premium of JANTXV, yet offering higher assurance than commercial 1N6623US in thermally stressed or radiation-prone deployments.
Availability
JAN1N6623US is available at Aetrix Electronics and suitable for aerospace power conversion, military radar transmitter supplies, and avionics flight control PSUs requiring stable component supply across extended product lifecycles and stringent environmental qualification.
Supply support for JAN1N6623US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discretes, and RF solutions for aerospace, defense, and industrial markets.
The JAN1N6623US belongs to Microsemi's military-qualified ultrafast rectifier family designed specifically for mission-critical power conversion where hermeticity, radiation tolerance, and surge survivability are non-negotiable.
FAQ
What is the maximum junction temperature rating for JAN1N6623US?
The JAN1N6623US has a specified junction temperature range of –65°C to +150°C. This wide operating range supports deployment in extreme environments such as spacecraft thermal vacuum chambers or jet engine-mounted electronics. The 150°C upper limit is maintained under all rated electrical conditions when thermal resistance to endcap (RθJEC = 13°C/W) is respected in layout design. Exceeding this temperature risks parametric shift and accelerated wear-out.
Does JAN1N6623US meet MIL-PRF-19500/585 requirements?
Yes, JAN1N6623US is fully qualified to MIL-PRF-19500/585 as a JAN-level device. It undergoes standardized military screening including temperature cycling, steady-state life test, and lot acceptance testing. Unlike commercial 1N6623US, JAN1N6623US carries traceable certification documentation and is marked with JAN prefix per specification. This qualification validates suitability for defense and aerospace applications governed by DLA Land and Maritime standards.
What is the reverse recovery time (trr) of JAN1N6623US under high-current conditions?
The JAN1N6623US has a maximum high-current reverse recovery time (trr) of 50 ns, measured at IF = 2 A and di/dt = 100 A/μs per MIL-STD-750 Method 4031 Condition D. This value is confirmed in the official SD52A datasheet and reflects performance under realistic switching stress. At lower currents (e.g., 0.5 A), trr drops to 30 ns. Designers should use the 50 ns figure for worst-case EMI and loss calculations in high-frequency SMPS designs.
Is JAN1N6623US radiation-hardened?
Yes, JAN1N6623US is inherently radiation-hardened per Microsemi MicroNote 050, exhibiting no functional failure or parametric degradation up to 100 krad(Si) total ionizing dose. This hardness arises from the voidless hermetic glass package, Category I metallurgical bond, and triple-layer passivation - not added process steps. No derating is required for TID exposure within this limit, making JAN1N6623US suitable for low-earth orbit satellites and nuclear instrumentation without supplemental shielding.
What packaging and marking does JAN1N6623US use?
JAN1N6623US uses Package A (D-5A): a hermetically sealed voidless hard-glass case with copper end caps finished in Sn/Pb. It weighs 193 mg and measures 6.25 mm × 2.67 mm × 1.70 mm. Marking consists solely of a cathode band; no alphanumeric part number is laser-etched or printed on the body. Tape-and-reel packaging follows EIA-481-B standard, with orientation aligned to cathode band position for automated placement verification.
JAN1N6623US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 880 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 1.55 V @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 50 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 880 V
- Capacitance @ Vr, F:
- 10pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/585
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
- Operating Temperature - Junction:
- -65°C ~ 150°C
JAN1N6623US FAQ
1.How can I place an order for JAN1N6623US through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6623US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6623US reliable?
The price and inventory of JAN1N6623US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6623US is usually 5 days.
3.What payment methods are accepted for JAN1N6623US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6623US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6623US?
JAN1N6623US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6623US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6623US?
For technical support, including JAN1N6623US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6623US requirements.
6.How does Aetrix verify that JAN1N6623US is sourced from the original manufacturer or authorized distributors?
All JAN1N6623US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6623US meets industry standards.
7.What is the process for return or replacement of JAN1N6623US?
All JAN1N6623US units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6623US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6623US part is unused and in its original packaging.
Return procedure for JAN1N6623US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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