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Microchip Technology JAN1N6624US/TR
- Part No.:
- JAN1N6624US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JAN1N6624US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:6,128
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Product details
Overview
JAN1N6624US/TR from Microsemi is a hermetically sealed, voidless-glass ultrafast recovery surface-mount rectifier diode rated for 900 V working peak reverse voltage, 1.5 A average forward current at +110°C, and 50 ns high-current reverse recovery time; it serves as a robust power conversion component in military-grade DC-DC converters and radiation-hardened satellite power supplies.
For engineers reviewing the JAN1N6624US/TR datasheet, JAN1N6624US/TR pinout, JAN1N6624US/TR application, or JAN1N6624US/TR equivalent, key selection criteria include its Category I metallurgical bond, 13°C/W junction-to-endcap thermal resistance, controlled avalanche capability up to 5.0 V peak recovery voltage, and MIL-PRF-19500/585 qualification for high-reliability embedded systems.
Technical Context
This JAN1N6624US/TR is a single-die, planar-junction silicon rectifier with triple-layer passivation and tungsten slug construction inside a hermetically sealed glass case. Its internal Category I metallurgical bond ensures mechanical integrity under thermal cycling and shock, while the voidless-glass encapsulation eliminates moisture ingress paths critical for space and avionics use.
The device operates across –65°C to +150°C junction temperature range and supports 20 A peak forward surge current (8.3 ms half-sine). Its 10 pF capacitance at 10 V reverse bias and low thermal resistance enable stable switching performance in high-frequency SMPS topologies requiring fast turn-off and minimal reverse recovery loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 900 V - Maximum continuous reverse voltage before breakdown; defines safe operating margin in 800 V nominal bus designs. |
| IF(AV) @ TEC=+110°C | 1.5 A - Sustained DC output current capability when endcap temperature is held at +110°C; requires heatsinking or copper pour per pad layout. |
| trr (High Current) | 50 ns - Time to recover from conduction to blocking state under 2 A forward / 100 A/μs di/dt; enables >1 MHz switching in resonant converters. |
| VF @ 1.0 A, 25°C | 1.55 V - Forward conduction loss at rated load; contributes ~1.55 W dissipation per diode at 1 A, guiding thermal design. |
| RθJEC | 13°C/W - Thermal resistance from junction to endcap; allows direct thermal coupling to chassis or metal-core PCB for passive cooling. |
| IRM (rec) | 4.2 A - Peak reverse recovery current during turn-off; determines snubber sizing and EMI filter requirements. |
| VFRM Max | 18 V - Maximum forward recovery voltage spike during turn-on; informs gate drive timing and clamping strategy. |
Pinout & Package
Package: Hermetically sealed voidless glass case "A" (also designated D-5A), with copper endcaps having Sn/Pb finish and cathode band marking. Dimensions: 6.25 mm × 2.67 mm × 1.70 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input-side of bridge or transformer secondary; must withstand 20 A surge without bond wire lift. |
| Cathode | Forward current exit point | Marked by visible band; ties to output rail or switching node; carries full load current and reverse recovery tail. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination and moisture-induced failure; certified for 100% burn-in and hermeticity testing per MIL-STD-883. |
| Category I metallurgical bond | Gold-tungsten interface ensures <1×10⁻⁸ atm·cc/s helium leak rate and survival under 1000 g mechanical shock. |
| Controlled avalanche rating | Rated for repetitive peak reverse power events up to 5.0 V × 4.2 A = 21 W, enabling ruggedized flyback clamp operation. |
| Triple-layer passivation | Silicon nitride/silicon dioxide/tantalum oxide stack prevents surface ion migration and leakage drift at high humidity and bias. |
| Radiation hardness | Inherently tolerant to total ionizing dose ≥100 krad(Si) and single-event burnout (SEB) per MicroNote 050; no derating needed for LEO missions. |
Applications
| Avionics Power Distribution | Satellite DC-DC Converters |
|---|---|
Use Scenario: Primary rectification in 28 V aircraft bus-fed isolated DC-DC modules powering flight control computers. IC Role / Device Role / Timing Role: Ultrafast recovery rectifier in forward converter secondary side, handling 1.5 A continuous and 20 A surge transients. Use Value: 50 ns trr minimizes dead-time losses and enables synchronous rectification compatibility; hermetic seal prevents condensation-induced arcing at altitude. | Use Scenario: Output rectification in radiation-hardened 48 V → 3.3 V isolated buck-derived converters on CubeSat power management units. IC Role / Device Role / Timing Role: High-reliability output diode in quasi-resonant topology operating at 500 kHz with 900 V isolation barrier. Use Value: 13°C/W RθJEC allows direct mounting to aluminum chassis for zero-fan thermal management; Category I bond survives launch vibration. |
| Military Radar Transmitter Supplies | Nuclear Instrumentation Systems |
Use Scenario: Pulse-forming network (PFN) charging diodes in solid-state radar modulators requiring high dv/dt immunity and surge robustness. IC Role / Device Role / Timing Role: Fast-switching series diode in high-voltage capacitor charging path, subjected to 20 A 8.3 ms surges. Use Value: 20 A IFSM rating and controlled avalanche behavior prevent catastrophic failure during PFN discharge transients. | Use Scenario: Signal conditioning front-end rectification in gamma spectroscopy detectors deployed in reactor containment zones. IC Role / Device Role / Timing Role: Low-leakage, radiation-tolerant rectifier in precision bias supply for photomultiplier tube HV generation. Use Value: 0.5 μA IR at 900 V ensures stable bias over 10-year deployment; inherent TID hardness avoids periodic recalibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6624US | Same die and package; screened to JANTXV level per MIL-PRF-19500/585 with extended temperature testing and lot traceability. | Required for Class H (–55°C to +125°C) operation and mission-critical DoD programs where full JANTXV certification is mandated. | Select JANTXV1N6624US when program documentation requires JANTXV-level screening and test reports. |
| SP6624US | Identical electrical specs and package; manufactured with additional JANS-level screening including 100% burn-in and radiation lot acceptance testing (RLAT). | Specified for spaceflight hardware where compliance with MIL-PRF-19500 Appendix A (JANS) and NASA EEE-INST-002 is required. | Choose SP6624US only if JANS qualification and radiation data packages are contractually obligated. |
Compared with JAN1N6624US/TR, JANTXV1N6624US adds extended environmental screening without altering electrical behavior, while SP6624US provides full space-grade radiation assurance-both retain identical pinout, thermal profile, and switching performance but differ in test scope and documentation rigor.
Availability
JAN1N6624US/TR is available at Aetrix Electronics and suitable for avionics power distribution, satellite DC-DC converters, and military radar transmitter supplies requiring stable component supply with guaranteed long-term continuity and full MIL-spec traceability.
Supply support for JAN1N6624US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and RF solutions for aerospace, defense, and industrial markets.
The JAN1N6624US/TR belongs to Microsemi's military-qualified ultrafast rectifier family designed specifically for mission-critical power conversion where failure is not an option-emphasizing hermetic reliability, radiation tolerance, and extreme thermal/mechanical survivability.
FAQ
What is the maximum working peak reverse voltage rating for JAN1N6624US/TR?
The JAN1N6624US/TR has a specified working peak reverse voltage (VRWM) of 900 V. This value is defined across the full operating junction temperature range and represents the highest repetitive reverse voltage the device can block without exceeding leakage or breakdown limits. It is derived from the minimum breakdown voltage of 990 V at 50 µA test current, with appropriate safety margin applied per MIL-PRF-19500/585 requirements.
Does JAN1N6624US/TR require a heatsink in typical operation?
JAN1N6624US/TR does not require an external heatsink when operated within its 1.5 A average forward current limit at +110°C endcap temperature, provided adequate copper area (≥250 mm² per pad) and thermal vias are used per the recommended pad layout. Its 13°C/W junction-to-endcap thermal resistance enables direct conduction cooling to a metal chassis or ground plane, eliminating need for discrete heatsinks in most high-reliability board-level implementations.
Is JAN1N6624US/TR compatible with lead-free reflow processes?
No-JAN1N6624US/TR features Sn/Pb (tin/lead) finished copper endcaps and is rated for soldering at 260°C for 10 seconds maximum. It is not qualified for lead-free reflow profiles (which typically exceed 260°C peak and require longer dwell times). Use of lead-free processes may compromise the hermetic seal integrity and metallurgical bond reliability; Microsemi explicitly specifies Sn/Pb assembly in the SD52A datasheet.
What is the reverse recovery time specification for JAN1N6624US/TR under high-current conditions?
The high-current reverse recovery time (trr) for JAN1N6624US/TR is 50 ns, measured at IF = 2 A and di/dt = 100 A/μs per MIL-STD-750 Method 4031 Condition D. This parameter reflects real-world switching behavior in hard-switched SMPS and defines the device's suitability for topologies operating above 200 kHz where recovery losses dominate efficiency.
How is polarity indicated on JAN1N6624US/TR?
Polarity on JAN1N6624US/TR is indicated by a single cathode band marked on the glass body near one endcap. The banded endcap is the cathode terminal; the opposite unmarked endcap is the anode. This marking aligns with JEDEC standard orientation for surface-mount glass diodes and is verified during final visual inspection per MIL-PRF-19500/585 requirements.
JAN1N6624US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 900 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 1.55 V @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 60 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 900 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/585
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 150°C
JAN1N6624US/TR FAQ
1.How can I place an order for JAN1N6624US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6624US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6624US/TR reliable?
The price and inventory of JAN1N6624US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6624US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6624US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6624US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6624US/TR?
JAN1N6624US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6624US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6624US/TR?
For technical support, including JAN1N6624US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6624US/TR requirements.
6.How does Aetrix verify that JAN1N6624US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6624US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6624US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6624US/TR?
All JAN1N6624US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6624US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6624US/TR part is unused and in its original packaging.
Return procedure for JAN1N6624US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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