My Inquiry
My Account
Microchip Technology JAN1N6625US/TR
- Part No.:
- JAN1N6625US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JAN1N6625US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:2,071
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N6625US/TR from Microsemi is a hermetically sealed, voidless-glass ultrafast recovery surface-mount rectifier diode rated for 1000 V working peak reverse voltage, 1.5 A average forward current at +110°C, and 15 A peak forward surge current; it delivers 60 ns high-current reverse recovery time and 1.75 V forward voltage at 1.0 A, serving in military-grade switching power supplies requiring radiation-hardened, high-reliability rectification.
For engineers reviewing the JAN1N6625US/TR datasheet, JAN1N6625US/TR pinout, JAN1N6625US/TR application, or JAN1N6625US/TR equivalent, key selection criteria include its MIL-PRF-19500/585 qualification, Category I metallurgical bond, 13°C/W junction-to-endcap thermal resistance, and controlled avalanche capability with 5.0 V peak recovery voltage at 30 A peak recovery current.
Technical Context
This JAN1N6625US/TR is a single-die, planar-junction silicon rectifier optimized for ultrafast switching in high-reliability DC-DC conversion stages. Its voidless glass package enables stable operation from −65°C to +150°C junction temperature, with triple-layer passivation ensuring long-term reliability under thermal cycling and humidity stress.
The device employs internal "Category I" metallurgical bonds between die and tungsten slugs, supporting controlled avalanche behavior up to 5.0 V peak recovery voltage and 30 A peak recovery current. Its 10 pF capacitance at 10 V reverse bias and 13°C/W thermal resistance facilitate low-noise, thermally efficient integration into compact, high-density power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 1000 V - Maximum continuous reverse voltage before breakdown; defines safe operating limit in high-voltage DC bus applications. |
| IF(AV) @ TEC=+110°C | 1.5 A - Sustained forward current rating when endcap temperature is held at +110°C; used for thermal design of heatsink interfaces. |
| trr (High Current) | 60 ns - Reverse recovery time at IF = 2 A, di/dt = 100 A/μs; critical for minimizing switching losses in >100 kHz SMPS topologies. |
| VF @ 1.0 A | 1.75 V - Forward voltage drop at 1.0 A; directly impacts conduction loss and thermal load in primary-side rectification. |
| RθJEC | 13°C/W - Junction-to-endcap thermal resistance; enables direct thermal modeling from die to mounting surface without PCB via dependence. |
| IRM (rec) | 30 A - Peak reverse recovery current; determines snubber sizing and EMI filter requirements in hard-switched converters. |
| C @ VR = 10 V | 10 pF - Junction capacitance; influences high-frequency ringing and gate drive interaction in synchronous rectifier control schemes. |
Pinout & Package
Package: Hermetically sealed voidless glass case with tungsten slugs and copper endcaps (Sn/Pb finish), designated Package "A" or D-5A per Microsemi SD52A drawing; dimensions: 6.25 mm × 2.67 mm × 1.70 mm (L × W × H); weight: 193 mg; polarity indicated by cathode band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input DC rail or transformer secondary; must withstand 15 A surge and 1000 V reverse standoff. |
| Cathode | Forward current exit point | Marked with band; connects to output filter capacitor or load; carries full rectified current and supports controlled avalanche during transient overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/585 Qualified | JAN-grade screening ensures compliance with military environmental, life, and reliability test requirements including thermal shock, vibration, and burn-in. |
| Voidless Hermetic Glass Construction | Eliminates internal delamination risk and moisture ingress, enabling >20-year field life in sealed avionics and space-qualified systems. |
| Category I Metallurgical Bond | Robust tungsten-silicon interface sustains mechanical stress and thermal expansion mismatch across −65°C to +150°C operation. |
| Controlled Avalanche Capability | Peak reverse power handling up to 5.0 V × 30 A enables self-limiting clamping during inductive turn-off transients without external TVS. |
| Inherent Radiation Hardness | Documented in MicroNote 050; suitable for low-dose-rate environments in satellite power subsystems without additional shielding. |
Applications
| Aerospace Power Conversion | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: High-efficiency DC-DC conversion in satellite solar array regulators where failure is not tolerable. IC Role / Device Role / Timing Role: Primary-side ultrafast rectifier in resonant LLC topology operating at 200–500 kHz. Use Value: 60 ns trr minimizes switching loss; 13°C/W RθJEC enables direct endcap mounting to chassis for passive cooling without forced air. | Use Scenario: Pulse-forming network (PFN) charging circuit in ground-based radar transmitters. IC Role / Device Role / Timing Role: High-reliability, high-surge rectifier in capacitor-charging stage subjected to repetitive 15 A surges. Use Value: 15 A IFSM rating and controlled avalanche behavior prevent catastrophic failure during PFN discharge transients. |
| Avionics Flight Control PSUs | Nuclear Instrumentation Power Modules |
Use Scenario: Redundant 28 V DC power supply for fly-by-wire actuator controllers in commercial aircraft. IC Role / Device Role / Timing Role: Input rectifier in dual-redundant AC/DC front-end with hot-swap capability. Use Value: MIL-qualified JAN grade and −65°C to +150°C operation ensure uninterrupted function across flight envelope extremes. | Use Scenario: Bias supply rectification in radiation-monitoring detectors deployed in reactor containment zones. IC Role / Device Role / Timing Role: Low-leakage, radiation-hardened rectifier in high-impedance detector bias chain. Use Value: Inherent radiation hardness per MicroNote 050 and <1.0 μA IR at 1000 V eliminate need for derating or shielding in gamma-rich environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6625US | Same electrical specs and package; JANTXV grade includes extended temperature screening and additional life testing per MIL-PRF-19500/585. | Required for Class H (−55°C to +125°C) or Class K (+125°C) extended-temperature programs where JAN grade is insufficient. | Select when full JANTXV qualification is mandated by system-level reliability spec, not just JAN. |
| SP6625US | Identical die and package; SP prefix denotes JANS screening level with full lot traceability and 100% parametric testing per MIL-PRF-19500 Appendix A. | Used in NASA and DoD spaceflight programs requiring JANS certification and full lot documentation. | Choose only when JANS-level documentation, radiation test reports, and lot-specific data packages are contractually required. |
Compared with JANTXV1N6625US and SP6625US, the JAN1N6625US/TR offers baseline MIL-PRF-19500/585 compliance at lower cost and lead time, while retaining identical electrical performance and hermetic reliability-making it optimal for defense electronics where JAN grade satisfies program requirements without JANTXV or JANS overhead.
Availability
JAN1N6625US/TR is available at Aetrix Electronics and suitable for aerospace power conversion, military radar transmitter supplies, and avionics flight control PSUs requiring stable component supply, long-term obsolescence management, and MIL-spec traceability.
Supply support for JAN1N6625US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with deep expertise in radiation-hardened and hermetically sealed components.
The JAN1N6625US/TR belongs to Microsemi's legacy ultrafast rectifier family engineered specifically for mission-critical power conversion where failure is unacceptable-emphasizing hermetic integrity, controlled avalanche, and MIL-qualified screening over cost or consumer-grade performance.
FAQ
What is the maximum working peak reverse voltage for JAN1N6625US/TR?
The JAN1N6625US/TR has a working peak reverse voltage (VRWM) of 1000 V, verified per MIL-STD-750 test conditions and specified in the official Microsemi SD52A datasheet. This rating defines the highest continuous reverse voltage the device can block across its full operating temperature range without breakdown, making it suitable for high-voltage DC bus rectification in military and aerospace systems where margin and reliability are critical. The JAN1N6625US/TR maintains this rating under all qualified screening levels.
Does JAN1N6625US/TR support controlled avalanche operation?
Yes, the JAN1N6625US/TR is designed with controlled avalanche capability, demonstrated by its specified peak recovery voltage (VFRM) of 5.0 V and peak recovery current (IRM) of 30 A under high-current reverse recovery conditions. This behavior is enabled by its Category I metallurgical bond and voidless glass construction, allowing it to safely absorb transient energy during inductive switching events without destructive failure-critical for ruggedized power supplies where external clamping may be impractical. The JAN1N6625US/TR datasheet confirms this feature in the Electrical Characteristics table and Applications/Benefits section.
What is the thermal resistance junction-to-endcap for JAN1N6625US/TR?
The thermal resistance junction-to-endcap (RθJEC) for JAN1N6625US/TR is 13°C/W, measured per standard thermal test methods and published in the Maximum Ratings section of the Microsemi SD52A datasheet. This parameter enables direct thermal path modeling from the silicon die to the mounting surface-bypassing PCB vias or copper layers-and supports passive cooling strategies in space-constrained, high-reliability enclosures. Engineers use this value to calculate junction temperature rise when the endcap temperature is known, ensuring the JAN1N6625US/TR remains within its −65°C to +150°C operational limit.
Is JAN1N6625US/TR radiation hardened?
Yes, the JAN1N6625US/TR is inherently radiation hard, as documented in Microsemi MicroNote 050, which details its performance under total ionizing dose (TID) and displacement damage environments typical of low-earth orbit and nuclear instrumentation applications. Unlike rad-hard-by-design ICs, this hardness arises from its silicon process, voidless glass packaging, and metallurgical structure-not added shielding or process modifications. The JAN1N6625US/TR retains full electrical functionality after exposure to relevant radiation levels, making it suitable for satellite power systems and reactor monitoring equipment without derating.
What package type does JAN1N6625US/TR use, and is it RoHS compliant?
JAN1N6625US/TR uses Microsemi's Package "A" (also designated D-5A), a hermetically sealed voidless glass case with tungsten slugs and copper endcaps finished in Sn/Pb. It is not RoHS compliant due to the lead-containing termination finish and military specification requirements; however, it meets MIL-PRF-19500/585 screening standards for high-reliability applications where Pb-free alternatives are not qualified. Alternate Pb-free versions are not offered for this JAN-grade part, and the JAN1N6625US/TR datasheet explicitly states Sn/Pb plating as standard.
JAN1N6625US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 1000 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 1.75 V @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 80 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 1000 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/585
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 150°C
JAN1N6625US/TR FAQ
1.How can I place an order for JAN1N6625US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6625US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6625US/TR reliable?
The price and inventory of JAN1N6625US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6625US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6625US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6625US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6625US/TR?
JAN1N6625US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6625US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6625US/TR?
For technical support, including JAN1N6625US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6625US/TR requirements.
6.How does Aetrix verify that JAN1N6625US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6625US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6625US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6625US/TR?
All JAN1N6625US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6625US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6625US/TR part is unused and in its original packaging.
Return procedure for JAN1N6625US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6625US/TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
