My Inquiry
My Account
Microchip Technology JAN1N6630US/TR
- Part No.:
- JAN1N6630US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JAN1N6630US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:4,754
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JAN1N6630US/TR from Microsemi is a hermetically sealed, voidless-glass ultrafast recovery surface-mount rectifier diode rated for 900 V working peak reverse voltage, 1.4 A average forward current at 25°C, and 1.8 A at 110°C with 50 ns high-current reverse recovery time - deployed in military-grade switching power supplies requiring radiation-hardened, high-reliability rectification under extreme thermal and surge stress.
For engineers reviewing the JAN1N6630US/TR datasheet, JAN1N6630US/TR pinout, JAN1N6630US/TR application, or JAN1N6630US/TR equivalent, key selection criteria include its MIL-PRF-19500/590 qualification, Category I metallurgical bond, 75 A peak forward surge capability, low 6.5°C/W junction-to-endcap thermal resistance, and controlled avalanche performance up to 5.0 A peak recovery current.
Technical Context
This JAN1N6630US/TR is a single-junction, planar-passivated silicon rectifier with triple-layer passivation and tungsten slug construction inside a voidless hard-glass hermetic package (Package E / D-5B). It operates across –65°C to +150°C junction temperature and supports controlled avalanche behavior with 5.0 A peak reverse recovery current and 12 V forward recovery voltage under 0.5 A, 12 ns rise-time conditions.
The device meets MIL-PRF-19500/590 Class JANTXV requirements and delivers ultrafast switching via 50 ns (high-current) and 60 ns (low-current) reverse recovery times, with 40 pF capacitance at 10 V reverse bias and 2.0 µA maximum reverse leakage at 900 V and 25°C - enabling stable operation in high-frequency DC-DC converters and radar pulse modulators.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 900 V - Maximum continuous reverse voltage before breakdown; defines safe operating ceiling in high-voltage DC bus applications. |
| IF(AV) @ TA=25°C | 1.40 A - Average forward current rating at room ambient; requires PCB thermal management to avoid exceeding TJ(max). |
| IF(AV) @ TEC=110°C | 1.8 A - Derated average current at endcap temperature; enables higher sustained conduction in thermally anchored layouts. |
| trr (High Current) | 50 ns - Reverse recovery time at 2 A, 100 A/µs; ensures minimal switching loss and EMI in >100 kHz SMPS topologies. |
| VFRM Max | 12 V - Forward recovery voltage at 0.5 A, 12 ns rise time; critical for snubber design and voltage overshoot control during turn-on. |
| RθJEC | 6.5°C/W - Junction-to-endcap thermal resistance; allows direct heatsinking via endcaps for high-power density mounting. |
| IRM (rec) | 4.2 A - Peak reverse recovery current; determines clamp diode sizing and transformer reset energy handling. |
Pinout & Package
Package: Hermetically sealed voidless hard-glass case (Package E / D-5B), with copper endcaps finished in Sn/Pb, cathode band marking, and 539 mg mass. Dimensions: BL = 0.200–0.225 in (5.08–5.72 mm), BD = 0.137–0.148 in (3.48–3.76 mm), ECT = 0.019–0.028 in (0.48–0.711 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input DC rail or transformer secondary; must withstand 75 A surge and 900 V reverse blocking. |
| Cathode | Forward current exit point | Marked by black band; ties to output filter capacitor or load return; carries full rectified current and avalanche energy. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal delamination risk and moisture ingress - essential for 20+ year field life in space and avionics systems. |
| Category I metallurgical bond | Ensures mechanical integrity under shock/vibration and thermal cycling; validated per MIL-STD-750 Method 2021. |
| Controlled avalanche capability | Supports repetitive energy dissipation up to 5.0 A peak reverse recovery current without degradation. |
| Triple-layer passivation | Prevents surface leakage and ion migration in high-humidity or radiation environments (MicroNote 050 compliant). |
| MIL-PRF-19500/590 JANTXV screening | Includes burn-in, temperature cycling, and parametric testing - certifies reliability for mission-critical defense electronics. |
Applications
| Avionics Power Conversion | Radar Pulse Modulators |
|---|---|
Use Scenario: High-efficiency DC-DC conversion in airborne radar transmitters where thermal cycling and vibration are severe. IC Role / Device Role / Timing Role: Ultrafast rectifier in forward converter secondary side, handling 900 V reverse stress and 2 A peak load current. Use Value: 50 ns trr minimizes switching loss and EMI; 6.5°C/W RθJEC enables direct endcap heatsinking on aluminum chassis. | Use Scenario: High-voltage pulse shaping in ground-based radar modulator stacks requiring precise timing and low recovery tail. IC Role / Device Role / Timing Role: Fast-recovery clamp diode in resonant charging circuits, absorbing transformer reset energy. Use Value: Controlled avalanche (5.0 A IRM) and 12 V VFRM allow predictable snubber design without voltage overshoot spikes. |
| Satellite Power Systems | Military Vehicle DC Distribution |
Use Scenario: Radiation-tolerant front-end rectification in LEO satellite solar array regulators exposed to total ionizing dose. IC Role / Device Role / Timing Role: Primary rectifier in MPPT stage, converting unregulated solar panel output to regulated bus voltage. Use Value: Inherent radiation hardness (MicroNote 050) and 1.8 A IF(AV) at 110°C support uninterrupted operation in vacuum thermal extremes. | Use Scenario: Engine compartment-mounted auxiliary power supply in armored vehicles subject to wide ambient (-40°C to +85°C) and mechanical shock. IC Role / Device Role / Timing Role: Input rectifier in 28 V DC-DC converter feeding mission computers and comms radios. Use Value: 75 A peak surge rating handles alternator load dump transients; hermetic seal prevents corrosion in high-salt/humidity environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JAN1N6629US/TR | 800 V VRWM, 50 ns trr, same package and thermal specs | Lower voltage rating limits use in 900 V bus designs but improves margin in 600–700 V systems | Select when system VRWM ≤ 800 V and tighter voltage tolerance is required. |
| JAN1N6631US/TR | 1000 V VRWM, 60 ns trr, 4.0 µA IR at 1000 V, 60 A surge rating | Higher voltage headroom but slower recovery and lower surge capacity than JAN1N6630US/TR | Choose for 1000 V systems where recovery speed is secondary to blocking voltage margin. |
Compared with JAN1N6629US/TR and JAN1N6631US/TR, the JAN1N6630US/TR uniquely balances 900 V blocking, 50 ns recovery, and 75 A surge capability - making it optimal for 800–950 V military SMPS where both voltage margin and switching efficiency are critical.
Availability
JAN1N6630US/TR is available at Aetrix Electronics and suitable for avionics power conversion, radar pulse modulators, satellite power systems, and military vehicle DC distribution requiring stable component supply across extended product lifecycles.
Supply support for JAN1N6630US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified analog and mixed-signal components.
The JAN1N6630US/TR belongs to Microsemi's legacy ultrafast rectifier family designed specifically for MIL-PRF-19500/590-compliant applications demanding hermetic sealing, controlled avalanche, and long-term stability in aerospace and defense systems.
FAQ
What is the maximum working peak reverse voltage for JAN1N6630US/TR?
The JAN1N6630US/TR has a working peak reverse voltage (VRWM) of 900 V, verified per MIL-PRF-19500/590 test conditions. This rating applies across the full operating junction temperature range of –65°C to +150°C and defines the maximum continuous reverse bias the device can sustain without breakdown. Exceeding this voltage risks irreversible avalanche failure unless energy-limited by external circuitry.
Does JAN1N6630US/TR support controlled avalanche operation?
Yes, the JAN1N6630US/TR is characterized for controlled avalanche with a peak reverse recovery current (IRM) of 4.2 A and forward recovery voltage (VFRM) of 12 V under specified test conditions. Its voidless-glass hermetic construction and Category I metallurgical bond enable repeatable, non-destructive avalanche energy absorption - critical for snubberless designs in radar modulators and high-voltage DC-DC converters.
What is the thermal resistance junction-to-endcap (RθJEC) for JAN1N6630US/TR?
The JAN1N6630US/TR has a thermal resistance of 6.5°C/W from junction to endcap (RθJEC), measured per MIL-STD-750 Method 1091. This low value enables direct thermal coupling to metal chassis or heatsinks via its copper endcaps, supporting sustained 1.8 A average forward current at 110°C endcap temperature - a key advantage over plastic-packaged alternatives in high-power-density military enclosures.
Is JAN1N6630US/TR qualified to MIL-PRF-19500/590?
Yes, the JAN1N6630US/TR is fully qualified to MIL-PRF-19500/590 as a JANTXV-grade device. It undergoes rigorous screening including steady-state life test, temperature cycling, and parametric verification per the specification. The "JAN" prefix confirms its compliance with military procurement standards, and the "TR" suffix indicates tape-and-reel packaging per EIA-481-B.
What is the reverse recovery time (trr) of JAN1N6630US/TR under high-current conditions?
The JAN1N6630US/TR exhibits a maximum high-current reverse recovery time (trr) of 50 ns, tested at IF = 2 A with di/dt = 100 A/µs per MIL-STD-750 Method 4031 Condition D. This ultrafast recovery enables efficient operation in switching power supplies above 100 kHz while minimizing commutation losses and electromagnetic interference in sensitive avionics and radar subsystems.
JAN1N6630US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 900 V
- Current - Average Rectified (Io):
- 1.4A
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1.4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 60 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 900 V
- Capacitance @ Vr, F:
- 40pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
- Operating Temperature - Junction:
- -65°C ~ 150°C
JAN1N6630US/TR FAQ
1.How can I place an order for JAN1N6630US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JAN1N6630US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JAN1N6630US/TR reliable?
The price and inventory of JAN1N6630US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6630US/TR is usually 5 days.
3.What payment methods are accepted for JAN1N6630US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6630US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JAN1N6630US/TR?
JAN1N6630US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JAN1N6630US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JAN1N6630US/TR?
For technical support, including JAN1N6630US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6630US/TR requirements.
6.How does Aetrix verify that JAN1N6630US/TR is sourced from the original manufacturer or authorized distributors?
All JAN1N6630US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6630US/TR meets industry standards.
7.What is the process for return or replacement of JAN1N6630US/TR?
All JAN1N6630US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6630US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JAN1N6630US/TR part is unused and in its original packaging.
Return procedure for JAN1N6630US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JAN1N6630US/TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
