Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Microchip Technology JAN1N6639US/TR

Name: JAN1N6639US/TR
Brand: Microchip Technology
SKU: JAN1N6639US/TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: JAN1N6639US/TR

Manufacturer:: Microchip Technology

Category:: Single Diodes

Package:: SQ-MELF, D

Datasheet:: JAN1N6639US/TR.pdf

Description:: SIGNAL OR COMPUTER DIODE

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,534

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

JAN1N6639US/TR from Microsemi is a hermetically sealed, axial-lead silicon switching diode in a D-5D glass package, rated for 75 V reverse working voltage (V_RWM), 100 V peak reverse voltage (V_BRR), and 300 mA operating current, with forward voltage of 0.54–0.62 V at 500 mA pulsed, used in high-reliability military timing, pulse shaping, and clamping circuits.

For engineers reviewing the JAN1N6639US/TR datasheet, JAN1N6639US/TR pinout, JAN1N6639US/TR application, or JAN1N6639US/TR equivalent, key selection criteria include its MIL-PRF-19500/609 qualification, -65°C to +175°C operating temperature range, 4.0 ns reverse recovery time, 2.5 pF junction capacitance, and metallurgically bonded non-cavity glass construction for radiation-tolerant environments.

Technical Context

This diode operates as a fast-switching unidirectional rectifier with defined turn-on threshold and low stored charge, enabling precise edge control in pulse-generation circuits. Its 4.0 ns reverse recovery time (t_rr) and 2.5 pF junction capacitance (C_T) support sub-10 ns signal transitions under 200 mA load conditions.

Designed per MIL-PRF-19500/609 Class JANTXV, it features a tin/lead lead finish, 50 °C/W thermal resistance (R_θJL), and axial coefficient of expansion matched to ceramic or Kovar mounting surfaces - critical for thermal-cycle reliability in aerospace avionics and missile guidance systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RWM	75 V - Maximum continuous reverse voltage before leakage exceeds 100 nA at +25°C, defining safe blocking capability in DC bias networks.
V_BRR	100 V - Peak non-repetitive reverse voltage withstand, supporting transient suppression in pulse-clamp topologies.
V_F @ 500 mA	0.54–0.62 V - Forward conduction loss window at rated pulsed current, directly impacting power dissipation in high-duty-cycle switch drivers.
t_rr	4.0 ns - Measured reverse recovery time at I_F = 200 mA, R_L = 100 Ω, defining minimum off-time for >100 MHz switching applications.
C_T @ V_R = 0	2.5 pF - Junction capacitance at zero bias, limiting high-frequency impedance roll-off and affecting rise/fall fidelity in RF sampling gates.
I_FSM	2.5 A - Non-repetitive surge current rating (8.3 ms sine half-wave), enabling robustness against inductive kickback in relay drive circuits.
Operating Temp	-65°C to +175°C - Full military-grade junction temperature range, validated per MIL-STD-202 test methods for thermal shock and life testing.

Pinout & Package

Package: D-5D hermetically sealed glass case per MIL-PRF-19500/609; axial leads with cathode band marking; tin/lead lead finish; 1.78–2.16 mm diameter (D), 4.19–4.95 mm body length (G).

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to lower-potential side in series-switch configurations; requires thermal relief pad for 300 mA steady-state operation.
Cathode (banded end)	Forward current exit / reverse blocking terminal	Marked end must face higher potential in clamp circuits; polarity reversal causes catastrophic failure above 75 V.

Key Features

Feature	Design Value
MIL-PRF-19500/609 JANTXV qualification	Guarantees screening for burn-in, thermal cycling, and radiation tolerance - required for DoD-specified flight hardware.
Metallurgically bonded junction	Eliminates wire-bond fatigue failure modes, enabling >100,000 thermal cycles between -65°C and +175°C without parameter shift.
Non-cavity glass construction	Prevents internal moisture ingress and hermetic seal degradation under high-humidity storage or reflow exposure.
4.0 ns t_rr with 2.5 pF C_T	Enables clean pulse edge preservation in <10 ns rise-time sample-and-hold and time-domain reflectometry front-ends.
50 °C/W R_θJL	Supports direct PCB-mount thermal management without heatsinks up to 300 mA DC, given 1 oz copper and ≥10 mm² thermal pad.

Applications

Precision Pulse Clamping	Military Timing Reference Circuits
Use Scenario: Clamping TTL/CMOS logic pulses to ±5 V rails in radiation-hardened FPGA configuration interfaces. IC Role / Device Role / Timing Role: Fast-switching diode providing sub-5 ns overvoltage protection at signal nodes without distorting edge integrity. Use Value: 4.0 ns t_rr and 2.5 pF C_T prevent ringing and overshoot beyond ±0.3 V, preserving setup/hold margins in 100 MHz clock distribution.	Use Scenario: Generating stable trigger edges for analog-to-digital converter sampling clocks in airborne radar receivers. IC Role / Device Role / Timing Role: Edge-shaping diode in Schmitt-trigger input stages, converting slow-rising oscillator outputs into clean square waves. Use Value: 0.54–0.62 V V_F ensures consistent threshold across -65°C to +175°C, eliminating timing drift in wide-temperature-range deployments.
High-Temp Power Supply OR-ing	Missile Guidance Signal Conditioning
Use Scenario: Diode-OR redundancy path in 1553B bus power supplies operating inside jet engine bays. IC Role / Device Role / Timing Role: Low-loss forward conduction element maintaining <100 mW dissipation at 200 mA while surviving 175°C ambient. Use Value: 300 mA rated current and -65°C to +175°C range enable uninterrupted operation where commercial diodes fail catastrophically.	Use Scenario: Input protection and level translation in inertial measurement unit (IMU) analog front-ends exposed to launch vibration and thermal shock. IC Role / Device Role / Timing Role: Transient suppressor and DC-level shifter for gyro sensor output signals prior to ADC input. Use Value: Hermetic D-5D package and metallurgical bond ensure no parameter shift after 2000 g shock testing per MIL-STD-883 Method 2002.

Precision Pulse Clamping

Military Timing Reference Circuits

Use Scenario: Clamping TTL/CMOS logic pulses to ±5 V rails in radiation-hardened FPGA configuration interfaces.

IC Role / Device Role / Timing Role: Fast-switching diode providing sub-5 ns overvoltage protection at signal nodes without distorting edge integrity.

Use Value: 4.0 ns t_rr and 2.5 pF C_T prevent ringing and overshoot beyond ±0.3 V, preserving setup/hold margins in 100 MHz clock distribution.

Use Scenario: Generating stable trigger edges for analog-to-digital converter sampling clocks in airborne radar receivers.

IC Role / Device Role / Timing Role: Edge-shaping diode in Schmitt-trigger input stages, converting slow-rising oscillator outputs into clean square waves.

Use Value: 0.54–0.62 V V_F ensures consistent threshold across -65°C to +175°C, eliminating timing drift in wide-temperature-range deployments.

High-Temp Power Supply OR-ing

Missile Guidance Signal Conditioning

Use Scenario: Diode-OR redundancy path in 1553B bus power supplies operating inside jet engine bays.

IC Role / Device Role / Timing Role: Low-loss forward conduction element maintaining <100 mW dissipation at 200 mA while surviving 175°C ambient.

Use Value: 300 mA rated current and -65°C to +175°C range enable uninterrupted operation where commercial diodes fail catastrophically.

Use Scenario: Input protection and level translation in inertial measurement unit (IMU) analog front-ends exposed to launch vibration and thermal shock.

IC Role / Device Role / Timing Role: Transient suppressor and DC-level shifter for gyro sensor output signals prior to ADC input.

Use Value: Hermetic D-5D package and metallurgical bond ensure no parameter shift after 2000 g shock testing per MIL-STD-883 Method 2002.

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
JAN1N6640US/TR	V_RWM = 50 V, V_F = 0.76–0.92 V @ 50 mA, t_rr = 4.0 ns - lower voltage rating but higher V_F at low current.	Suitable for 30–50 V logic interface clamping where lower leakage (<100 nA @ 50 V) is prioritized over high-current conduction.	Select when system reverse voltage never exceeds 50 V and tighter low-current V_F consistency is needed.
JAN1N6641US/TR	V_RWM = 50 V, t_rr = 5.0 ns, C_T = 3.0 pF - slightly slower recovery and higher capacitance than JAN1N6639US/TR.	Preferred in lower-frequency (<50 MHz) analog switch matrices where junction capacitance stability outweighs speed.	Choose only if design tolerates 1 ns longer t_rr and can accommodate 0.5 pF higher C_T without signal integrity impact.

Compared with JAN1N6639US/TR, JAN1N6640US/TR offers lower V_RWM but better low-current V_F repeatability, while JAN1N6641US/TR trades 1 ns slower recovery for improved C_T stability - neither is pin-compatible, and all three require separate layout validation due to differing thermal pad requirements.

Availability

JAN1N6639US/TR is available at Aetrix Electronics and suitable for precision pulse clamping, military timing reference circuits, and high-temp power supply OR-ing requiring stable component supply across extended temperature and radiation-exposed environments.

Supply support for JAN1N6639US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing radiation hardness and extended temperature performance.

The JAN1N6639US/TR belongs to Microsemi's MIL-PRF-19500/609 qualified switching diode family, engineered specifically for mission-critical timing, pulse conditioning, and transient protection in spaceflight and tactical weapons systems.

FAQ

What is the maximum continuous reverse voltage rating for JAN1N6639US/TR?

The JAN1N6639US/TR has a maximum continuous reverse working voltage (V_RWM) of 75 V at +25°C, verified per MIL-PRF-19500/609 test conditions. This rating drops linearly with junction temperature and must be derated above +110°C per the 4.6 mA/°C derating curve. Exceeding 75 V continuously risks irreversible leakage increase beyond 100 nA.

Is JAN1N6639US/TR suitable for surface-mount assembly?

No - JAN1N6639US/TR uses an axial-lead D-5D glass package with tin/lead leads, designed exclusively for through-hole mounting. Its hermetic glass body and axial geometry are incompatible with reflow soldering profiles or pick-and-place handling. Board layout must include plated-through holes sized for 0.48–0.71 mm lead diameter.

What is the reverse recovery time (t_rr) of JAN1N6639US/TR and how is it measured?

JAN1N6639US/TR has a reverse recovery time (t_rr) of 4.0 ns, measured at I_F = 200 mA, I_R = 200 mA, R_L = 100 Ω, and V_R = 25 V per MIL-PRF-19500/609 test method 301.1. This value reflects total time from 10% I_F decay to 10% I_R undershoot during commutation, critical for minimizing switching losses in high-frequency pulse circuits.

Does JAN1N6639US/TR require derating above ambient temperature?

Yes - JAN1N6639US/TR must be derated above +110°C case temperature at 4.6 mA/°C for forward current. Its 300 mA rated current applies only up to +110°C; at +175°C, maximum allowable DC current is reduced to approximately 140 mA. Thermal design must account for R_θJL = 50 °C/W and mounting surface COE matching to avoid mechanical stress-induced failure.

How does the junction capacitance of JAN1N6639US/TR affect high-frequency performance?

JAN1N6639US/TR exhibits 2.5 pF junction capacitance (C_T) at zero bias, directly limiting its impedance above ~100 MHz. In RF sampling gate applications, this capacitance forms a low-pass filter with source impedance - e.g., 50 Ω source yields -3 dB point at ~1.3 GHz - making it suitable for sub-GHz edge sharpening but not microwave-frequency switching.

JAN1N6639US/TR Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: SQ-MELF, D

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 75 V

Current - Average Rectified (Io):: 300mA

Voltage - Forward (Vf) (Max) @ If:: 1.2 V @ 500 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 4 ns

Current - Reverse Leakage @ Vr:: 100 nA @ 75 V

Capacitance @ Vr, F:: -

Grade:: Military

Qualification:: MIL-PRF-19500/609

Mounting Type:: Surface Mount

Supplier Device Package:: D-5D

Operating Temperature - Junction:: -65°C ~ 175°C

JAN1N6639US/TR FAQ

1.How can I place an order for JAN1N6639US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N6639US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N6639US/TR reliable?

The price and inventory of JAN1N6639US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6639US/TR is usually 5 days.

3.What payment methods are accepted for JAN1N6639US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6639US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N6639US/TR?

JAN1N6639US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N6639US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N6639US/TR?

For technical support, including JAN1N6639US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6639US/TR requirements.

6.How does Aetrix verify that JAN1N6639US/TR is sourced from the original manufacturer or authorized distributors?

All JAN1N6639US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6639US/TR meets industry standards.

7.What is the process for return or replacement of JAN1N6639US/TR?

All JAN1N6639US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6639US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N6639US/TR part is unused and in its original packaging.

Return procedure for JAN1N6639US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…