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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Microchip Technology JAN1N6641US/TR

Name: JAN1N6641US/TR
Brand: Microchip Technology
SKU: JAN1N6641US/TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: JAN1N6641US/TR

Manufacturer:: Microchip Technology

Category:: Single Diodes

Package:: SQ-MELF, D

Datasheet:: JAN1N6641US/TR.pdf

Description:: SIGNAL OR COMPUTER DIODE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

JAN1N6641US/TR from Microsemi is a hermetically sealed, metallurgically bonded, axial-lead switching diode in a D-5D glass package, rated for 75 V reverse working voltage (V_RWM), 200 mA forward current (I_F), and 5.0 ns reverse recovery time (t_rr), used in high-reliability military timing, pulse shaping, and clamping circuits operating from −65°C to +175°C.

For engineers reviewing the JAN1N6641US/TR datasheet, JAN1N6641US/TR pinout, JAN1N6641US/TR application, or JAN1N6641US/TR equivalent, key selection criteria include its 75 V V_RWM, 5.0 ns t_rr, 1.10 V V_F @ 200 mA, 100 nA I_R1 @ 10 µA, and MIL-PRF-19500/609 qualification for aerospace and defense systems requiring extended temperature operation and radiation-tolerant packaging.

Technical Context

The JAN1N6641US/TR is a fast-switching, low-capacitance silicon diode optimized for high-speed digital and RF signal routing where rapid turn-off and minimal charge storage are critical. Its 5.0 ns reverse recovery time and 3.0 pF junction capacitance at V_R = 0 support clean edge fidelity in pulse generators and sample-and-hold circuits.

Designed per MIL-PRF-19500/609 Class JANS, it features a non-cavity glass D-5D case with tin/lead leads, 50 °C/W thermal resistance (R_θJA), and polarity marked by cathode band - enabling direct integration into legacy military PCB layouts without derating penalties up to +175°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RWM	75 V - Maximum continuous reverse voltage before breakdown; defines safe operating range in clamp and protection circuits.
t_rr	5.0 ns - Measured at I_F = 200 mA, I_R = 10 mA, R_L = 100 Ω; enables >100 MHz switching in pulse-forming networks.
V_F	1.10 V @ 200 mA - Forward drop under rated pulsed current; determines conduction loss and self-heating in high-duty-cycle applications.
I_R1	100 nA @ 10 µA - Reverse leakage at low bias; critical for precision timing references and low-current hold circuits.
C_T	3.0 pF @ V_R = 0 - Junction capacitance; sets upper frequency limit for RF switching and impedance matching stability.
T_J Range	−65°C to +175°C - Fully specified junction temperature range; supports engine bay, avionics, and downhole electronics without derating.

Pinout & Package

Package: Hermetically sealed D-5D glass case per MIL-PRF-19500/609, axial lead, cathode indicated by colored band. Dimensions: D = 1.78–2.16 mm, G = 4.19–4.95 mm, F = 0.48–0.71 mm, S ≥ 0.08 mm.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to positive supply or signal source in series-switching configurations; must handle 200 mA DC / 2.5 A surge.
Cathode	Forward current exit / reverse blocking terminal	Banded end; referenced to ground or negative rail in clamp circuits; withstands 75 V reverse bias with ≤100 nA leakage.

Key Features

Feature	Design Value
MIL-PRF-19500/609 JANS qualification	Meets full screening, lot acceptance testing, and reliability requirements for spaceflight and strategic systems.
Hermetic D-5D glass package	Eliminates moisture ingress and outgassing; ensures long-term parameter stability in vacuum and high-humidity environments.
Metallurgical anode-cathode bond	Provides superior thermal cycling endurance (>1000 cycles) and low interfacial resistance versus epoxy-bonded alternatives.
−65°C to +175°C operational range	Enables deployment in turbine control, missile guidance, and nuclear instrumentation without external thermal management.

Applications

High-Speed Pulse Clamping	Timing Reference Protection
Use Scenario: Clamp transient spikes on TTL/CMOS clock distribution lines in airborne mission computers. IC Role / Device Role / Timing Role: Fast-turn-off shunt limiter protecting FPGA clock inputs from ESD-induced overshoot. Use Value: 5.0 ns t_rr and 75 V V_RWM prevent latch-up while preserving <1 ns edge integrity across −55°C to +125°C.	Use Scenario: Isolate crystal oscillator outputs from load variations in inertial navigation systems. IC Role / Device Role / Timing Role: Series-blocking diode in Pierce oscillator feedback path to suppress harmonic injection. Use Value: 3.0 pF C_T minimizes phase perturbation; 100 nA I_R1 avoids DC bias shift in high-Q resonator circuits.
RF Signal Routing	Precision Sample-and-Hold
Use Scenario: Switch RF carriers between antenna paths in SATCOM transceivers operating at L-band. IC Role / Device Role / Timing Role: PIN-diode replacement in low-power passive switch matrixes requiring sub-ns switching. Use Value: 1.10 V V_F @ 200 mA reduces insertion loss; hermetic seal prevents Q-factor degradation in humid coastal deployments.	Use Scenario: Hold capacitor discharge prevention in radiation-hardened data acquisition front-ends. IC Role / Device Role / Timing Role: Guard diode across sample capacitor to block backfeed during ADC conversion windows. Use Value: 100 nA I_R1 limits hold error to <0.01% over 100 µs; 175°C rating allows placement near power converters.

High-Speed Pulse Clamping

Timing Reference Protection

Use Scenario: Clamp transient spikes on TTL/CMOS clock distribution lines in airborne mission computers.

IC Role / Device Role / Timing Role: Fast-turn-off shunt limiter protecting FPGA clock inputs from ESD-induced overshoot.

Use Value: 5.0 ns t_rr and 75 V V_RWM prevent latch-up while preserving <1 ns edge integrity across −55°C to +125°C.

Use Scenario: Isolate crystal oscillator outputs from load variations in inertial navigation systems.

IC Role / Device Role / Timing Role: Series-blocking diode in Pierce oscillator feedback path to suppress harmonic injection.

Use Value: 3.0 pF C_T minimizes phase perturbation; 100 nA I_R1 avoids DC bias shift in high-Q resonator circuits.

RF Signal Routing

Precision Sample-and-Hold

Use Scenario: Switch RF carriers between antenna paths in SATCOM transceivers operating at L-band.

IC Role / Device Role / Timing Role: PIN-diode replacement in low-power passive switch matrixes requiring sub-ns switching.

Use Value: 1.10 V V_F @ 200 mA reduces insertion loss; hermetic seal prevents Q-factor degradation in humid coastal deployments.

Use Scenario: Hold capacitor discharge prevention in radiation-hardened data acquisition front-ends.

IC Role / Device Role / Timing Role: Guard diode across sample capacitor to block backfeed during ADC conversion windows.

Use Value: 100 nA I_R1 limits hold error to <0.01% over 100 µs; 175°C rating allows placement near power converters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
JANTXV1N6641US	Same electrical specs; enhanced screening per MIL-PRF-19500/609 Class JANTXV (including burn-in and 100% parametric test).	Required for flight-critical subsystems where zero-defect reliability is mandated.	Select when full JANTXV screening is contractually required; otherwise JAN1N6641US/TR meets standard JANS-level performance.
1N6641US	Identical die and package; commercial-grade screening without MIL-PRF-19500/609 compliance documentation or traceability.	Suitable only for ground-test benches or non-mission-critical prototypes.	Choose only for cost-sensitive development; JAN1N6641US/TR provides full military traceability and lot-level certification.

Compared with JANTXV1N6641US and 1N6641US, the JAN1N6641US/TR delivers certified JANS-level reliability with full MIL-PRF-19500/609 documentation, making it the minimum qualified part for deployed military hardware where audit-ready pedigree and extended temperature validation are mandatory.

Availability

JAN1N6641US/TR is available at Aetrix Electronics and suitable for aerospace avionics, missile guidance systems, and nuclear instrumentation requiring stable component supply with full MIL-PRF-19500/609 traceability and extended temperature assurance.

Supply support for JAN1N6641US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, RF, and radiation-hardened components for defense, aerospace, and industrial markets.

The JAN1N6641US/TR belongs to Microsemi's legacy MIL-PRF-19500/609 switching diode family, engineered specifically for extreme-environment signal conditioning where speed, hermeticity, and specification certainty outweigh cost sensitivity.

FAQ

What is the maximum reverse working voltage (V_RWM) for JAN1N6641US/TR?

The JAN1N6641US/TR has a maximum reverse working voltage (V_RWM) of 75 V, verified per MIL-PRF-19500/609 test conditions at +25°C. This rating remains valid across its full −65°C to +175°C operating range and is guaranteed with no derating up to +110°C ambient, after which linear derating applies at 4.6 mA/°C. The JAN1N6641US/TR maintains this V_RWM with ≤100 nA leakage at 10 µA test current.

Does JAN1N6641US/TR meet MIL-PRF-19500/609 requirements?

Yes, the JAN1N6641US/TR is fully compliant with MIL-PRF-19500/609 Class JANS, including hermetic D-5D packaging, metallurgical bonding, 100% parametric screening, and environmental stress testing. It carries full traceability documentation, lot-specific test reports, and qualification to the "JAN" prefix level - distinguishing it from commercial 1N6641US or higher-screened JANTXV variants. The JAN1N6641US/TR is approved for use in DoD-accredited systems requiring JANS-level pedigree.

What is the reverse recovery time (t_rr) of JAN1N6641US/TR and how is it measured?

The JAN1N6641US/TR has a reverse recovery time (t_rr) of 5.0 ns, measured under standardized conditions: I_F = 200 mA, I_R = 10 mA, R_L = 100 Ω, and T_J = +25°C. This value is guaranteed per MIL-PRF-19500/609 and reflects the time required for minority carrier recombination after forward conduction ceases. The JAN1N6641US/TR achieves this performance via optimized doping profile and low-charge-storage design, enabling reliable operation in >100 MHz pulse applications.

What package type and lead finish does JAN1N6641US/TR use?

The JAN1N6641US/TR uses a hermetically sealed D-5D glass package per MIL-PRF-19500/609, with axial leads and cathode identification via a visible band. Lead finish is tin/lead (Sn/Pb), compatible with standard wave and reflow soldering processes used in military PCB assembly. The package dimensions are tightly controlled: body diameter 1.78–2.16 mm, overall length 4.19–4.95 mm, and lead diameter 0.48–0.71 mm - all verified per drawing 160-IN6639US-thru-IN6641US.

Can JAN1N6641US/TR operate at +175°C continuously?

Yes, the JAN1N6641US/TR is fully rated for continuous operation at +175°C junction temperature, with all electrical parameters (V_RWM, t_rr, V_F, I_R) guaranteed across −65°C to +175°C. Its thermal resistance is 50 °C/W max at L = 0, and it supports derated current above +110°C ambient. The JAN1N6641US/TR achieves this via metallurgical bonding and hermetic sealing, making it suitable for turbine-mounted sensors and downhole telemetry where ambient temperatures exceed 150°C.

JAN1N6641US/TR Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: SQ-MELF, D

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 50 V

Current - Average Rectified (Io):: 300mA

Voltage - Forward (Vf) (Max) @ If:: 1.1 V @ 200 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 5 ns

Current - Reverse Leakage @ Vr:: 100 nA @ 50 V

Capacitance @ Vr, F:: -

Grade:: Military

Qualification:: MIL-PRF-19500/609

Mounting Type:: Surface Mount

Supplier Device Package:: D-5D

Operating Temperature - Junction:: -65°C ~ 175°C

JAN1N6641US/TR FAQ

1.How can I place an order for JAN1N6641US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N6641US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N6641US/TR reliable?

The price and inventory of JAN1N6641US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6641US/TR is usually 5 days.

3.What payment methods are accepted for JAN1N6641US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6641US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N6641US/TR?

JAN1N6641US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N6641US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N6641US/TR?

For technical support, including JAN1N6641US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6641US/TR requirements.

6.How does Aetrix verify that JAN1N6641US/TR is sourced from the original manufacturer or authorized distributors?

All JAN1N6641US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6641US/TR meets industry standards.

7.What is the process for return or replacement of JAN1N6641US/TR?

All JAN1N6641US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6641US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N6641US/TR part is unused and in its original packaging.

Return procedure for JAN1N6641US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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