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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Microchip Technology JAN1N6642U

Name: JAN1N6642U
Brand: Microchip Technology
SKU: JAN1N6642U
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: JAN1N6642U

Manufacturer:: Microchip Technology

Category:: Single Diodes

Package:: SQ-MELF, D

Datasheet:: JAN1N6642U.pdf

Description:: DIODE GEN PURP 75V 300MA D-5D

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Product details

Overview

JAN1N6642U from Microsemi is a hermetically sealed, metallurgically bonded, axial-lead switching diode in a non-cavity glass D-5D package, rated for 75 V reverse working voltage (V_RWM), 100 V peak reverse voltage (V_BR), and 100 mA pulsed forward current (I_F), used in high-reliability timing, clamping, and pulse shaping circuits in aerospace power conditioning systems.

For engineers reviewing the JAN1N6642U datasheet, JAN1N6642U pinout, JAN1N6642U application, or JAN1N6642U equivalent, key selection criteria include its 5.0 ns reverse recovery time (t_rr), 20 ns forward recovery time (t_fr), 50 pF capacitance at 20 V, and operation across –65°C to +175°C with MIL-PRF-19500/578 qualification.

Technical Context

The JAN1N6642U is a fast-switching, low-capacitance silicon diode optimized for high-frequency transient suppression and precise waveform edge control. Its 75 V_RWM rating supports use in DC-DC converter snubbers and sample-and-hold clamp networks where low leakage (<25 nA at 75 V) and stable junction temperature behavior are required.

Thermal resistance of 50 °C/W (R_θJC) and metallurgical bonding enable reliable operation under thermal cycling stress. The D-5D glass package with tin/lead leads meets MIL-PRF-19500/578 for space-grade applications requiring hermeticity and radiation tolerance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RWM	75 V dc - Maximum continuous reverse voltage before significant leakage or breakdown in normal operation.
V_BR	100 V pk - Minimum peak reverse voltage at which breakdown occurs at I_R = 100 µA, defining overvoltage margin.
t_rr	5.0 ns - Measured reverse recovery time at I_R = 1 mA, critical for minimizing switching losses in >1 MHz circuits.
C_T @ 20 V	5.0 pF - Junction capacitance at 20 V reverse bias, directly affecting high-frequency signal integrity and bandwidth limits.
I_R @ V_RWM	25 nA dc - Reverse leakage current at full rated reverse working voltage, enabling low-power standby functionality.
Operating Temp	–65°C to +175°C - Full military temperature range supported by hermetic D-5D packaging and metallurgical die attach.

Pinout & Package

Package: Hermetically sealed non-cavity glass D-5D case per MIL-PRF-19500/578; axial leads with cathode band marking; lead finish: tin/lead; thermal resistance R_θJC ≤ 50 °C/W.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to lower-potential node during conduction; must withstand 300 mA continuous and 2.5 A surge (8.3 ms half-sine).
Cathode	Forward current exit / reverse blocking terminal	Banded end; sustains 75 V reverse bias with <25 nA leakage; defines polarity-sensitive placement in clamp/sync circuits.

Key Features

Feature	Design Value
Hermetic D-5D glass package	Enables long-term reliability in vacuum, high-humidity, or radiation-exposed environments per MIL-PRF-19500/578.
Metallurgical die bond	Provides superior thermal cycling endurance and mechanical stability vs. epoxy-bonded alternatives in aerospace avionics.
5.0 ns t_rr at I_R = 1 mA	Supports clean edge transitions in >100 MHz sampling gates and RF detector front-ends without tail current distortion.
25 nA I_R @ 75 V	Minimizes standby power loss in precision analog hold circuits and low-current reference clamps.
–65°C to +175°C operation	Eliminates derating concerns in engine-mounted or satellite power subsystems exposed to extreme thermal gradients.

Applications

High-Speed Pulse Clamping	DC-DC Converter Snubber
Use Scenario: Protecting FPGA I/O pins from ESD-induced overshoot during hot-plug events in flight computers. IC Role / Device Role: Fast-acting voltage clamp limiting transient excursions to <100 V while preserving signal edge fidelity. Use Value: 5.0 ns t_rr and 25 nA leakage ensure minimal loading on 50 Ω transmission lines and no DC offset drift in bias networks.	Use Scenario: Suppressing voltage spikes across MOSFET drains in 500 kHz isolated flyback converters for satellite power buses. IC Role / Device Role: Passive snubber diode absorbing turn-off energy and reducing EMI generation at switching nodes. Use Value: 75 V_RWM rating and 50 °C/W thermal resistance allow sustained operation at 125°C ambient without derating.
Precision Timing Reference Clamp	Aerospace Sample-and-Hold Circuit
Use Scenario: Stabilizing oscillator amplitude in VCXO modules used for telemetry clock synchronization. IC Role / Device Role: Peak detector clamp establishing precise DC reference level for varactor tuning voltage. Use Value: 5.0 pF capacitance at 20 V ensures negligible phase perturbation in 10–100 MHz oscillator loops.	Use Scenario: Holding analog sensor outputs during ADC conversion cycles in inertial measurement units (IMUs). IC Role / Device Role: Low-leakage hold switch isolating capacitor charge between sampling intervals. Use Value: 25 nA I_R at 75 V enables <0.1% droop over 10 µs hold periods, meeting MIL-STD-883 Class B accuracy.

High-Speed Pulse Clamping

DC-DC Converter Snubber

Use Scenario: Protecting FPGA I/O pins from ESD-induced overshoot during hot-plug events in flight computers.

IC Role / Device Role: Fast-acting voltage clamp limiting transient excursions to <100 V while preserving signal edge fidelity.

Use Value: 5.0 ns t_rr and 25 nA leakage ensure minimal loading on 50 Ω transmission lines and no DC offset drift in bias networks.

Use Scenario: Suppressing voltage spikes across MOSFET drains in 500 kHz isolated flyback converters for satellite power buses.

IC Role / Device Role: Passive snubber diode absorbing turn-off energy and reducing EMI generation at switching nodes.

Use Value: 75 V_RWM rating and 50 °C/W thermal resistance allow sustained operation at 125°C ambient without derating.

Precision Timing Reference Clamp

Aerospace Sample-and-Hold Circuit

Use Scenario: Stabilizing oscillator amplitude in VCXO modules used for telemetry clock synchronization.

IC Role / Device Role: Peak detector clamp establishing precise DC reference level for varactor tuning voltage.

Use Value: 5.0 pF capacitance at 20 V ensures negligible phase perturbation in 10–100 MHz oscillator loops.

Use Scenario: Holding analog sensor outputs during ADC conversion cycles in inertial measurement units (IMUs).

IC Role / Device Role: Low-leakage hold switch isolating capacitor charge between sampling intervals.

Use Value: 25 nA I_R at 75 V enables <0.1% droop over 10 µs hold periods, meeting MIL-STD-883 Class B accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
JAN1N6643U	Lower V_RWM (50 V), higher I_R (50 nA @ 50 V), same t_rr (6.0 ns)	Better suited for sub-50 V logic-level clamping; not rated for 75 V bus protection.	Select when system reverse voltage is ≤50 V and tighter capacitance matching (5.0 pF) is required.
JANTXV1N6642US	Same electrical specs but US variant: smaller D-5A package, 25 °C/W Z_θJX, qualified to JANTXV level	Preferred for weight-constrained PCB layouts and higher thermal impedance requirements in conduction-cooled modules.	Choose for space-optimized designs needing enhanced thermal performance and extended screening.

Compared with JAN1N6642U, JAN1N6643U trades reverse voltage headroom for lower leakage sensitivity in low-voltage rails, while JANTXV1N6642US delivers identical switching performance in a thermally superior, smaller footprint-enabling layout flexibility without sacrificing MIL-spec reliability.

Availability

JAN1N6642U is available at Aetrix Electronics and suitable for aerospace power conditioning, satellite telemetry interfaces, and flight control system clamping circuits requiring stable component supply across extended temperature and radiation environments.

Supply support for JAN1N6642U includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor manufacturer specializing in high-reliability, radiation-hardened, and military-grade analog and discrete components.

The JAN1N6642U belongs to Microsemi's legacy MIL-PRF-19500/578 switching diode family, designed specifically for mission-critical timing, clamping, and transient suppression in defense and space electronics where hermeticity and thermal robustness are non-negotiable.

FAQ

What is the maximum reverse working voltage (V_RWM) for JAN1N6642U?

The JAN1N6642U has a maximum reverse working voltage (V_RWM) of 75 V dc, verified per MIL-PRF-19500/578 test conditions at 25°C. This rating defines the highest continuous reverse voltage the device can sustain without exceeding specified leakage current limits. Exceeding 75 V dc risks premature breakdown or accelerated degradation in long-term operation. The JAN1N6642U remains fully functional up to its 100 V peak reverse voltage (V_BR) under transient conditions.

Does JAN1N6642U meet MIL-PRF-19500/578 specifications?

Yes, the JAN1N6642U is explicitly qualified per MIL-PRF-19500/578 for JAN, JANTX, JANTXV, and JANS levels. It undergoes rigorous testing including hermeticity validation, thermal shock, life testing, and radiation tolerance verification. The JAN1N6642U's D-5D glass package, metallurgical bonding, and tin/lead leads are all defined in the specification. Compliance documentation is available through Microchip's qualified manufacturer listing for this part number.

What is the reverse recovery time (t_rr) of JAN1N6642U and how is it measured?

The JAN1N6642U has a reverse recovery time (t_rr) of 5.0 ns, measured at I_R = 1 mA with specified test conditions per MIL-PRF-19500/578. This value reflects the time required for minority carriers to clear the depletion region after forward conduction ceases. The 5.0 ns t_rr enables reliable operation in >100 MHz pulse applications. The JAN1N6642U's t_rr is stable across its full operating temperature range due to its metallurgically bonded construction.

Can JAN1N6642U be used in place of JAN1N6643U?

No-JAN1N6642U is not a direct replacement for JAN1N6643U due to differing reverse voltage ratings: JAN1N6642U is rated for 75 V_RWM, while JAN1N6643U is rated for only 50 V_RWM. Substituting JAN1N6642U into a circuit designed for JAN1N6643U may result in unnecessary overdesign and cost, whereas substituting JAN1N6643U into a 75 V application risks catastrophic failure. The JAN1N6642U offers higher voltage margin but slightly higher capacitance (5.0 pF vs. 5.0 pF at 20 V, identical) and lower leakage (25 nA vs. 50 nA).

What is the thermal resistance (R_θJC) of JAN1N6642U and why does it matter?

The JAN1N6642U has a maximum junction-to-case thermal resistance (R_θJC) of 50 °C/W at L = 0, as specified in its design data. This parameter quantifies how effectively heat transfers from the silicon die to the case surface, directly impacting safe operating area under pulsed or continuous current. A lower R_θJC allows higher power dissipation before reaching the 175°C maximum junction temperature. The JAN1N6642U's 50 °C/W rating supports reliable operation in conduction-cooled aerospace enclosures without forced airflow.

JAN1N6642U Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: SQ-MELF, D

Packaging:: Bulk

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 75 V

Current - Average Rectified (Io):: 300mA

Voltage - Forward (Vf) (Max) @ If:: 1.2 V @ 100 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 5 ns

Current - Reverse Leakage @ Vr:: 500 nA @ 75 V

Capacitance @ Vr, F:: -

Grade:: Military

Qualification:: MIL-PRF-19500/578

Mounting Type:: Surface Mount

Supplier Device Package:: D-5D

Operating Temperature - Junction:: -65°C ~ 175°C

JAN1N6642U FAQ

1.How can I place an order for JAN1N6642U through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N6642U on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N6642U reliable?

The price and inventory of JAN1N6642U are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6642U is usually 5 days.

3.What payment methods are accepted for JAN1N6642U?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6642U transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N6642U?

JAN1N6642U orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N6642U order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N6642U?

For technical support, including JAN1N6642U datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6642U requirements.

6.How does Aetrix verify that JAN1N6642U is sourced from the original manufacturer or authorized distributors?

All JAN1N6642U products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6642U meets industry standards.

7.What is the process for return or replacement of JAN1N6642U?

All JAN1N6642U units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6642U, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N6642U part is unused and in its original packaging.

Return procedure for JAN1N6642U:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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