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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Microchip Technology JAN1N6643US/TR

Name: JAN1N6643US/TR
Brand: Microchip Technology
SKU: JAN1N6643US/TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: JAN1N6643US/TR

Manufacturer:: Microchip Technology

Category:: Single Diodes

Package:: SQ-MELF, D

Datasheet:: JAN1N6643US/TR.pdf

Description:: SIGNAL OR COMPUTER DIODE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

JAN1N6643US/TR from Microsemi is a hermetically sealed, ultra-fast switching diode in the D-5D (SQ-MELF) package, rated for 75 V breakdown voltage, 50 V working peak reverse voltage, and 6.0 ns reverse recovery time at 10 mA. It delivers low forward voltage (0.8 V @ 10 mA), very low junction capacitance (2.8 pF @ 1.5 V), and operates across –65 °C to +175 °C - ideal for high-frequency data line protection in military-grade RS-232 interfaces.

For engineers reviewing the JAN1N6643US/TR datasheet, JAN1N6643US/TR pinout, JAN1N6643US/TR application, or JAN1N6643US/TR equivalent, this part serves as a qualified MIL-PRF-19500/578 JAN-level replacement for legacy signal diodes in timing-critical, high-reliability embedded systems where low capacitance and fast recovery are mandatory.

Technical Context

This diode uses metallurgically bonded construction inside a voidless hard-glass non-cavity package, enabling stable operation under thermal shock and extended temperature cycling. Its ultra-fast trr of 6.0 ns and low C_J of 2.8 pF support clean edge transitions in digital logic and interface circuits up to ~100 MHz.

The device is specified with dual reverse leakage limits: 50 nA at VRWM (50 V) and 100 µA at VRWM at +150 °C, confirming robustness in high-temperature avionics and downhole electronics. Thermal resistance R_θJA is 250 °C/W on FR4 PCB, requiring minimal heatsinking in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
Breakdown Voltage (V_BR)	75 V minimum - ensures reliable clamping above 50 V working voltage without avalanche conduction.
Working Peak Reverse Voltage (V_RWM)	50 V - defines maximum continuous reverse bias in signal path without degradation.
Reverse Recovery Time (t_rr)	6.0 ns - enables use in >10 MHz switching applications with minimal tail current and ringing.
Junction Capacitance (C_J)	2.8 pF @ 1.5 V - preserves signal integrity on high-speed data lines like RS-422 and Ethernet PHYs.
Forward Voltage (V_F)	0.8 V @ 10 mA - minimizes power loss and self-heating in low-current logic-level clamping.
Operating Temperature Range	–65 °C to +175 °C - supports deployment in aerospace, defense, and oilfield electronics without derating.

Pinout & Package

Package: D-5D (Square Miniature MELF), hermetically sealed hard-glass case with tin-lead plated terminals; cathode indicated by painted band; polarity critical for correct circuit function.

Pin/Terminal	Circuit Role	Design Meaning
Anode	Forward current entry point	Connected to lower-potential side of signal path; must be biased positive relative to cathode for conduction.
Cathode	Forward current exit / reverse blocking terminal	Marked by band; connects to higher-potential node or ground reference; blocks up to 50 V reverse bias.

Key Features

Feature	Design Value
Metallurgical bonding	Eliminates wire bonds and interfacial delamination risk - critical for MIL-STD-883 vibration and thermal shock compliance.
Voidless hermetic seal	Prevents moisture ingress and long-term parameter drift - validated per MIL-PRF-19500/578 JANS-level testing.
Ultra-low capacitance	2.8 pF enables <1% signal attenuation on 50 Ω transmission lines up to 100 MHz.
JAN reliability level	Qualified to MIL-PRF-19500/578 with full lot traceability, radiation hardness screening, and burn-in - required for flight-critical subsystems.

Applications

RS-232 Interface Protection	Ethernet 10BASE-T Receivers
Use Scenario: Clamping ESD transients and line reflections on serial communication ports in ruggedized industrial controllers. IC Role / Device Role / Timing Role: Signal-level transient suppressor placed directly at connector entry point before line driver/receiver ICs. Use Value: 6.0 ns t_rr and 2.8 pF C_J prevent data corruption during 250 kbps RS-232 bursts while surviving ±15 kV HBM ESD.	Use Scenario: Protecting differential receiver inputs in legacy Ethernet PHYs operating at 10 Mbps. IC Role / Device Role / Timing Role: High-speed bidirectional clamp limiting common-mode overvoltage on TPIN+/TPIN− pairs. Use Value: Low capacitance avoids skew between differential signals; 50 V V_RWM accommodates typical 10BASE-T common-mode swing.
Magnetic Core Memory Drivers	Aerospace Data Acquisition Front-Ends
Use Scenario: Steering and isolation in legacy core memory read/write pulse circuits requiring sub-10 ns switching. IC Role / Device Role / Timing Role: Fast-switching current steering element in discrete core driver arrays. Use Value: 6.0 ns t_rr ensures clean current reversal within 20 ns core access windows; metallurgical bond prevents failure under repeated pulse stress.	Use Scenario: Input protection for analog-to-digital converter front-ends in satellite telemetry modules exposed to wide thermal excursions. IC Role / Device Role / Timing Role: Precision signal-path clamp maintaining DC accuracy and AC bandwidth. Use Value: Stable –65 °C to +175 °C operation and <50 nA leakage at 50 V ensure no offset drift or noise injection across mission lifetime.

RS-232 Interface Protection

Ethernet 10BASE-T Receivers

Use Scenario: Clamping ESD transients and line reflections on serial communication ports in ruggedized industrial controllers.

IC Role / Device Role / Timing Role: Signal-level transient suppressor placed directly at connector entry point before line driver/receiver ICs.

Use Value: 6.0 ns t_rr and 2.8 pF C_J prevent data corruption during 250 kbps RS-232 bursts while surviving ±15 kV HBM ESD.

Use Scenario: Protecting differential receiver inputs in legacy Ethernet PHYs operating at 10 Mbps.

IC Role / Device Role / Timing Role: High-speed bidirectional clamp limiting common-mode overvoltage on TPIN+/TPIN− pairs.

Use Value: Low capacitance avoids skew between differential signals; 50 V V_RWM accommodates typical 10BASE-T common-mode swing.

Magnetic Core Memory Drivers

Aerospace Data Acquisition Front-Ends

Use Scenario: Steering and isolation in legacy core memory read/write pulse circuits requiring sub-10 ns switching.

IC Role / Device Role / Timing Role: Fast-switching current steering element in discrete core driver arrays.

Use Value: 6.0 ns t_rr ensures clean current reversal within 20 ns core access windows; metallurgical bond prevents failure under repeated pulse stress.

Use Scenario: Input protection for analog-to-digital converter front-ends in satellite telemetry modules exposed to wide thermal excursions.

IC Role / Device Role / Timing Role: Precision signal-path clamp maintaining DC accuracy and AC bandwidth.

Use Value: Stable –65 °C to +175 °C operation and <50 nA leakage at 50 V ensure no offset drift or noise injection across mission lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultra-fast switching diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
1N4148UR-1	Commercial-grade only; 4.0 ns t_rr, but not MIL-qualified; 75 V V_RWM; higher C_J (4 pF).	Lacks JAN/JANTXV qualification; unsuitable for flight hardware or Class H environments.	Select when cost and speed outweigh radiation tolerance and extended temperature needs.
JAN1N6642US/TR	Higher V_RWM (75 V) and V_BR (100 V); identical t_rr (5.0 ns), C_J (2.8 pF), and package.	Better suited for 48 V bus monitoring or higher-voltage logic interfaces where 50 V margin is insufficient.	Choose if system reverse voltage exceeds 50 V but same speed and footprint are required.

Compared with 1N4148UR-1 and JAN1N6642US/TR, the JAN1N6643US/TR uniquely balances 50 V working voltage, 6.0 ns switching, and full JAN-level qualification - making it the only option meeting both MIL-PRF-19500/578 requirements and tight 100 MHz signal integrity constraints.

Availability

JAN1N6643US/TR is available at Aetrix Electronics and suitable for RS-232 interface protection, Ethernet 10BASE-T receivers, magnetic core memory drivers, and aerospace data acquisition front-ends requiring stable component supply across extended temperature and radiation-hardened environments.

Supply support for JAN1N6643US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.

The JAN1N6643US/TR belongs to Microsemi's military-qualified switching diode product line, engineered specifically for ultra-fast, high-temperature signal routing and transient suppression in safety-critical electronic systems.

FAQ

What is the reverse recovery time specification for JAN1N6643US/TR?

The JAN1N6643US/TR has a reverse recovery time (t_rr) of 6.0 ns under standard test conditions (I_F = I_R = 10 mA, I_R(REC) = 1.0 mA). This value is measured per MIL-PRF-19500/578 and confirmed in the T4-LDS-0218-1 datasheet. The 6.0 ns t_rr makes JAN1N6643US/TR suitable for high-frequency switching applications such as RS-232 line clamping and Ethernet 10BASE-T receiver protection where fast edge fidelity is essential.

Is JAN1N6643US/TR RoHS compliant?

No, the JAN1N6643US/TR is not RoHS compliant. Per the T4-LDS-0218-1 datasheet, RoHS-compliant versions (e3 marking) are available only for commercial-grade variants, not for JAN-level devices. The JAN1N6643US/TR uses tin-lead plating (>3% Pb) on its terminals and is manufactured to meet MIL-PRF-19500/578 requirements, which permit leaded finishes for enhanced solderability and reliability in harsh environments.

What package type does JAN1N6643US/TR use?

JAN1N6643US/TR uses the D-5D package - a square miniature MELF (SQ-MELF) configuration with voidless hermetically sealed hard glass construction. Dimensions are 0.070–0.085 inches in diameter and 0.165–0.195 inches in length. The package features metallurgically bonded internal structure and cathode polarity indicated by a painted band, as documented in the T4-LDS-0218-1 mechanical drawings.

How does JAN1N6643US/TR differ from JAN1N6642US/TR?

JAN1N6643US/TR and JAN1N6642US/TR share identical package, reverse recovery time (5.0 ns vs. 6.0 ns), junction capacitance (2.8 pF), and thermal specs, but differ in voltage ratings: JAN1N6643US/TR has V_BR = 75 V and V_RWM = 50 V, while JAN1N6642US/TR offers V_BR = 100 V and V_RWM = 75 V. Both are JAN-qualified per MIL-PRF-19500/578, but JAN1N6643US/TR targets 50 V-class signal paths, whereas JAN1N6642US/TR suits higher-voltage applications.

Can JAN1N6643US/TR replace 1N4148UR in military designs?

JAN1N6643US/TR is explicitly listed as a replacement for 1N4148UR in the T4-LDS-0218-1 datasheet, but only in applications requiring MIL-PRF-19500/578 qualification. While 1N4148UR offers faster t_rr (4.0 ns), it lacks JAN-level screening, temperature range (–65 °C to +175 °C), and hermetic sealing. For military designs, JAN1N6643US/TR provides guaranteed reliability where 1N4148UR cannot be used - making JAN1N6643US/TR the qualified drop-in alternative when environmental rigor is mandated.

JAN1N6643US/TR Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: SQ-MELF, D

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 50 V

Current - Average Rectified (Io):: 300mA

Voltage - Forward (Vf) (Max) @ If:: 1.2 V @ 100 mA

Speed:: Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr):: 5 ns

Current - Reverse Leakage @ Vr:: 500 nA @ 50 V

Capacitance @ Vr, F:: 5pF @ 0V, 1MHz

Grade:: Military

Qualification:: MIL-PRF-19500/578

Mounting Type:: Surface Mount

Supplier Device Package:: D-5D

Operating Temperature - Junction:: -65°C ~ 175°C

JAN1N6643US/TR FAQ

1.How can I place an order for JAN1N6643US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN1N6643US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN1N6643US/TR reliable?

The price and inventory of JAN1N6643US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN1N6643US/TR is usually 5 days.

3.What payment methods are accepted for JAN1N6643US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN1N6643US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN1N6643US/TR?

JAN1N6643US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN1N6643US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN1N6643US/TR?

For technical support, including JAN1N6643US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN1N6643US/TR requirements.

6.How does Aetrix verify that JAN1N6643US/TR is sourced from the original manufacturer or authorized distributors?

All JAN1N6643US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN1N6643US/TR meets industry standards.

7.What is the process for return or replacement of JAN1N6643US/TR?

All JAN1N6643US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN1N6643US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN1N6643US/TR part is unused and in its original packaging.

Return procedure for JAN1N6643US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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