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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Microchip Technology JAN2N2920U/TR

Name: JAN2N2920U/TR
Brand: Microchip Technology
SKU: JAN2N2920U/TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: JAN2N2920U/TR

Manufacturer:: Microchip Technology

Category:: Bipolar Transistor Arrays

Package:: 6-SMD, No Lead

Datasheet:: JAN2N2920U/TR.pdf

Description:: TRANS 2NPN DUAL 60V 30MA U

Quantity:: RFQ Add To RFQ list

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Product details

Overview

JAN2N2920U/TR from Microsemi is a military-grade NPN silicon dual transistor in surface-mount U-package, qualified per MIL-PRF-19500/355. It features V_CEO = 60 V, I_C = 30 mA per section, h_FE = 175–1000 (depending on I_C), and operates across –65°C to +200°C junction temperature. It is used in high-reliability analog signal amplification and switching circuits in aerospace telemetry receivers.

For engineers reviewing the JAN2N2920U/TR datasheet, JAN2N2920U/TR pinout, JAN2N2920U/TR application, or JAN2N2920U/TR equivalent, key selection criteria include dual-section gain matching, TO-78-compatible surface-mount footprint, MIL-spec thermal robustness, low-noise performance at 10 μA bias, and verified dual-transistor isolation for differential pair configurations.

Technical Context

This dual NPN transistor integrates two electrically isolated gain sections in a single U-package, enabling matched-pair operation without inter-device variation. Each section supports independent biasing with V_CEO = 60 V, V_CBO = 70 V, and V_EBO = 6.0 V, meeting Class S screening requirements for space-qualified applications.

Its h_FE range spans 175–1000 across 10 μA–1 mA collector currents, supporting both low-current preamplifier stages and medium-current driver functions. Dynamic parameters include |h_fe| ≥ 3.0 at 20 MHz, C_obo = 5.0 pF, and noise figure as low as 3.0 dB at 1 kHz - confirming suitability for RF front-end and precision instrumentation amplifier designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 Vdc - maximum safe collector-emitter voltage per section before breakdown
I_C (per section)	30 mAdc - continuous collector current rating per transistor section
h_FE (I_C = 1.0 mA)	300–1000 - DC current gain range enabling stable bias design at medium current
V_CE(sat)	0.3 Vdc - low saturation voltage ensures minimal power loss in switching mode
T_J Range	–65°C to +200°C - extended junction temperature enables operation in extreme environments
C_obo	5.0 pF - output capacitance limits high-frequency roll-off in RF amplifier stages
F (1 kHz)	3.0 dB - measured noise figure confirms low-noise capability for sensitive analog front-ends

Pinout & Package

Package: Surface-mount U-package (TO-78 variant), 6-pin, lead-free, qualified to MIL-PRF-19500/355 Class S.

Pin/Terminal	Circuit Role	Design Meaning
1	Collector no. 1	Primary current sink node for first transistor section
2	Base no. 1	Control input for first transistor section; requires external bias network
3	Base no. 2	Independent control input for second transistor section; enables differential or cascaded bias
4	Collector no. 2	Current sink node for second transistor section; electrically isolated from Pin 1
5	Emitter no. 2	Reference terminal for second section; typically tied to ground or bias rail
6	Emitter no. 1	Reference terminal for first section; allows separate emitter degeneration or feedback

Key Features

Feature	Design Value
Dual isolated NPN sections	Enables matched-pair amplifiers or differential switches without discrete component matching
MIL-PRF-19500/355 qualification	Guarantees screening, testing, and traceability for defense and space programs
–65°C to +200°C operation	Supports deployment in engine-mounted avionics, downhole tools, and satellite power systems
Low 3.0 dB noise figure at 1 kHz	Preserves signal integrity in low-level sensor interface and telemetry receiver front-ends
Surface-mount U-package footprint	Provides TO-78 mechanical compatibility while enabling automated assembly and reduced board area

Applications

Aerospace Telemetry Receiver	Downhole Oilfield Sensor Interface
Use Scenario: Amplifying weak RF signals from remote spacecraft transponders in S-band receivers. IC Role / Device Role / Timing Role: Dual NPN configured as cascode preamplifier with matched gain sections for noise suppression and bandwidth extension. Use Value: 3.0 dB noise figure and 20 MHz \|h_fe\| ensure high SNR and stable small-signal gain across mission-critical telemetry links.	Use Scenario: Conditioning low-amplitude thermocouple and strain gauge outputs in high-temperature drill string electronics. IC Role / Device Role / Timing Role: Dual-section transconductance amplifier with independent emitter degeneration for offset trimming and thermal drift compensation. Use Value: –65°C to +200°C operation and 60 V V_CEO allow direct integration near sensors without external protection or cooling.
Satellite Power Sequencing Control	Military Radar Pulse Modulator
Use Scenario: Controlling staged activation of DC-DC converters and payload subsystems during orbital insertion. IC Role / Device Role / Timing Role: Dual NPN used as isolated level-shifted switch drivers for MOSFET gate control under radiation-hardened logic. Use Value: Electrical isolation between sections prevents latch-up propagation; 30 mA I_C rating drives multiple gate loads reliably.	Use Scenario: Generating fast-rise-time trigger pulses for klystron and TWT modulator stages in ground-based radar transmitters. IC Role / Device Role / Timing Role: Dual NPN configured as complementary switch pair to shape and invert high-voltage pulse edges. Use Value: V_CE(sat) ≤ 0.3 V and 60 V V_CEO enable clean, low-loss pulse edge generation with minimal overshoot.

Aerospace Telemetry Receiver

Downhole Oilfield Sensor Interface

Use Scenario: Amplifying weak RF signals from remote spacecraft transponders in S-band receivers.

IC Role / Device Role / Timing Role: Dual NPN configured as cascode preamplifier with matched gain sections for noise suppression and bandwidth extension.

Use Value: 3.0 dB noise figure and 20 MHz |h_fe| ensure high SNR and stable small-signal gain across mission-critical telemetry links.

Use Scenario: Conditioning low-amplitude thermocouple and strain gauge outputs in high-temperature drill string electronics.

IC Role / Device Role / Timing Role: Dual-section transconductance amplifier with independent emitter degeneration for offset trimming and thermal drift compensation.

Use Value: –65°C to +200°C operation and 60 V V_CEO allow direct integration near sensors without external protection or cooling.

Satellite Power Sequencing Control

Military Radar Pulse Modulator

Use Scenario: Controlling staged activation of DC-DC converters and payload subsystems during orbital insertion.

IC Role / Device Role / Timing Role: Dual NPN used as isolated level-shifted switch drivers for MOSFET gate control under radiation-hardened logic.

Use Value: Electrical isolation between sections prevents latch-up propagation; 30 mA I_C rating drives multiple gate loads reliably.

Use Scenario: Generating fast-rise-time trigger pulses for klystron and TWT modulator stages in ground-based radar transmitters.

IC Role / Device Role / Timing Role: Dual NPN configured as complementary switch pair to shape and invert high-voltage pulse edges.

Use Value: V_CE(sat) ≤ 0.3 V and 60 V V_CEO enable clean, low-loss pulse edge generation with minimal overshoot.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
JANTX2N2920U	Same die, Class B screening (not Class S); lower test coverage and no burn-in	Suitable for non-flight-critical ground support equipment where full Class S is not mandated	Select when cost sensitivity outweighs need for full space-qualified reliability assurance
2N2920U	Commercial-grade version; no MIL-spec screening, wider parameter tolerances, 0°C to +70°C rating	Limited to benign-environment industrial controls or lab prototypes	Choose only for early development or non-mission-critical evaluation prior to Class S procurement

Compared with JANTX2N2920U and 2N2920U, the JAN2N2920U/TR provides guaranteed Class S screening, extended –65°C to +200°C operation, and tighter h_FE distribution - making it the sole option for flight hardware, launch vehicle avionics, and nuclear-hardened systems requiring zero field failure risk.

Availability

JAN2N2920U/TR is available at Aetrix Electronics and suitable for aerospace telemetry receivers, downhole sensor interfaces, satellite power sequencers, and military radar pulse modulators requiring stable component supply under long-term obsolescence management.

Supply support for JAN2N2920U/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-tolerant components for defense, aerospace, and industrial markets.

The JAN2N2920U/TR belongs to Microsemi's legacy MIL-PRF-19500 linear transistor family, designed specifically for high-stability, low-noise, dual-transistor signal conditioning in mission-critical analog subsystems.

FAQ

What is the maximum operating temperature for JAN2N2920U/TR?

JAN2N2920U/TR has a specified junction temperature range of –65°C to +200°C, validated per MIL-PRF-19500/355 Class S screening. This enables use in engine-mounted avionics, downhole tools, and satellite power systems where ambient temperatures exceed commercial-grade limits. The device maintains parametric stability across this full range, with derating applied above +25°C ambient per datasheet Note 2.

Does JAN2N2920U/TR support dual-section gain matching?

Yes, JAN2N2920U/TR integrates two electrically isolated NPN transistors on a single die with tightly controlled process matching. Its h_FE specification (175–1000 at I_C = 1.0 mA) applies identically to both sections, and MIL-PRF-19500/355 Class S screening includes gain tracking verification. This makes JAN2N2920U/TR suitable for differential amplifiers, current mirrors, and cascode configurations requiring matched characteristics.

What is the noise performance of JAN2N2920U/TR at low currents?

JAN2N2920U/TR achieves a noise figure of 5.0 dB at 100 Hz, 3.0 dB at 1 kHz, and 3.0 dB at 10 kHz (I_C = 10 μA, V_CE = 5 V, R_G = 10 kΩ). These values are measured and guaranteed per the T4-LDS-0202 Rev. 1 datasheet, confirming its suitability for ultra-low-current preamplifier stages in seismic sensors, radiation detectors, and precision instrumentation where signal integrity is critical.

Is JAN2N2920U/TR pin-compatible with other TO-78 dual transistors?

JAN2N2920U/TR uses the surface-mount U-package variant of TO-78 with a defined 6-pin layout (Pins 1–6 assigned to C1, B1, B2, C2, E2, E1). While mechanically compatible with standard TO-78 footprints, its pinout differs from through-hole variants like 2N2920L. Engineers must verify PCB land pattern alignment using Figure 2 in the T4-LDS-0202 datasheet before migration.

What screening level does JAN2N2920U/TR meet?

JAN2N2920U/TR is qualified to MIL-PRF-19500/355 Class S, the highest reliability tier for discrete semiconductors. This includes 100% lot acceptance testing, burn-in, thermal cycling, and parametric screening per military standards. Class S certification ensures traceability, radiation tolerance, and zero-defect reliability for flight-critical and nuclear-hardened applications - a requirement not met by JANTX or commercial-grade versions.

JAN2N2920U/TR Specifications

Product attributes: Attribute value

Manufacturer:: Microchip Technology

Series:: -

Package/Case:: 6-SMD, No Lead

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 NPN (Dual)

Current - Collector (Ic) (Max):: 30mA

Voltage - Collector Emitter Breakdown (Max):: 60V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 100µA, 1mA

Current - Collector Cutoff (Max):: 10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 300 @ 1mA, 5V

Power - Max:: 350mW

Frequency - Transition:: -

Operating Temperature:: 200°C (TJ)

Grade:: Military

Qualification:: MIL-PRF-19500/355

Mounting Type:: Surface Mount

Supplier Device Package:: U

JAN2N2920U/TR FAQ

1.How can I place an order for JAN2N2920U/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JAN2N2920U/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JAN2N2920U/TR reliable?

The price and inventory of JAN2N2920U/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JAN2N2920U/TR is usually 5 days.

3.What payment methods are accepted for JAN2N2920U/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JAN2N2920U/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JAN2N2920U/TR?

JAN2N2920U/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JAN2N2920U/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JAN2N2920U/TR?

For technical support, including JAN2N2920U/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JAN2N2920U/TR requirements.

6.How does Aetrix verify that JAN2N2920U/TR is sourced from the original manufacturer or authorized distributors?

All JAN2N2920U/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JAN2N2920U/TR meets industry standards.

7.What is the process for return or replacement of JAN2N2920U/TR?

All JAN2N2920U/TR units undergo pre-shipment inspection (PSI). If there is an issue with JAN2N2920U/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JAN2N2920U/TR part is unused and in its original packaging.

Return procedure for JAN2N2920U/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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