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Microchip Technology JANS1N5712UBCA/TR
- Part No.:
- JANS1N5712UBCA/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JANS1N5712UBCA/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 16V 75MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:9,943
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Product details
Overview
JANS1N5712UBCA/TR from Microsemi is a military-qualified Schottky barrier diode in ceramic surface-mount UB package, rated for 16 V working peak reverse voltage, 75 mA average rectified output current, and 0.41 V forward voltage at 1 mA - used in high-reliability RF detector and sample-and-hold circuits operating from -65 °C to +150 °C.
For engineers reviewing the JANS1N5712UBCA/TR datasheet, JANS1N5712UBCA/TR pinout, JANS1N5712UBCA/TR application, or JANS1N5712UBCA/TR equivalent, key selection factors include its MIL-PRF-19500/444 JANS qualification, low 150 nA reverse leakage at 16 V, 2.0 pF junction capacitance at 0 V, common-anode dual-die configuration, and ceramic hermetic packaging for space and avionics environments.
Technical Context
This device implements a dual-die common-anode Schottky structure in a single ceramic surface-mount package, enabling matched-pair operation without external interconnect parasitics. Its 100 ps effective minority carrier lifetime ensures fast switching with minimal stored charge.
Designed for high-stability signal routing in radiation-tolerant systems, it maintains specified electrical characteristics across -65 °C to +150 °C and supports solder reflow up to 260 °C for 10 seconds. Thermal resistance from junction to solder pad is 100 °C/W.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 16 V - maximum continuous reverse voltage before significant leakage onset; defines safe operating range in clamp/detector circuits |
| IO (avg) | 75 mA - average rectified current at TC = +130 °C; derates linearly to zero at +150 °C |
| VF @ 1 mA | 0.41 V - low forward threshold enables efficient low-voltage signal detection and minimal power loss |
| IR @ VRWM | 150 nA - ultra-low reverse leakage preserves signal integrity in high-impedance sampling nodes |
| CT @ 0 V | 2.0 pF - low junction capacitance supports >100 MHz RF detector bandwidth without tuning |
| TJ Range | -65 °C to +150 °C - extended temperature capability for aerospace, missile, and downhole electronics |
| RθJSP | 100 °C/W - thermal resistance from junction to solder pad; informs PCB copper area requirements for thermal management |
Pinout & Package
Ceramic surface-mount UB package with gold-plated nickel terminals; hermetically sealed, weight ≈ 0.04 g; dimensions per MIL-PRF-19500/444: 0.115–0.128 in length × 0.085–0.108 in width × 0.046–0.056 in height (2.92–3.25 mm × 2.16–2.74 mm × 1.17–1.42 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 (Base) | Anode common connection | Shared anode node for dual-diode configuration; ties both die anodes to system reference |
| Pad 2 (Emitter) | Cathode of Diode 1 | Independent cathode terminal for first Schottky junction; routed to signal path 1 |
| Pad 3 (Collector) | Cathode of Diode 2 | Independent cathode terminal for second Schottky junction; routed to signal path 2 |
| Pad 4 (Shield) | Case ground / lid shield | Metallized ceramic lid connected to chassis ground; suppresses EMI coupling into sensitive RF nodes |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JANS qualification | Qualified for spaceflight, missile guidance, and nuclear-hardened systems with full lot traceability and screening |
| Common-anode dual-diode topology | Enables matched-pair operation in balanced modulators, phase detectors, and differential clamping without layout asymmetry |
| 100 ps minority carrier lifetime | Minimizes reverse recovery tail and enables clean switching in 10–100 MHz sampling applications |
| Hermetic ceramic package | Prevents moisture ingress and parametric drift over 20+ year service life in vacuum or high-humidity environments |
| ESD Class 1 sensitivity | Requires handling per ANSI/ESD S20.20; protects against gate oxide damage during board assembly |
Applications
| Radar Pulse Detector | Phase-Sensitive Demodulator |
|---|---|
Use Scenario: Detecting 1–10 GHz radar return pulses in airborne warning receivers using envelope detection. IC Role / Device Role / Timing Role: Dual Schottky diode acting as synchronous detector with matched forward characteristics across both paths. Use Value: 2.0 pF capacitance and 150 nA leakage preserve pulse fidelity and SNR above 5 GHz; JANS screening ensures reliability under vibration and thermal cycling. | Use Scenario: Converting I/Q baseband signals in secure SATCOM transceivers with sub-degree phase error tolerance. IC Role / Device Role / Timing Role: Common-anode pair performing quadrature signal rectification and vector summing in analog phase demodulation. Use Value: Matched VF (0.41 V @ 1 mA) and identical τ (100 ps) minimize quadrature imbalance; ceramic package prevents parameter shift during orbit thermal gradients. |
| Avionics Power Sequencing Clamp | Downhole Telemetry Signal Conditioner |
Use Scenario: Clamping transient spikes on 28 V DC aircraft bus lines during generator switchover or load dump events. IC Role / Device Role / Timing Role: Fast-turn-on Schottky clamp limiting voltage excursions to <30 V while absorbing 75 mA surge current. Use Value: 16 V VRWM and 75 mA IO rating provide margin above nominal bus; -65 °C to +150 °C operation covers cold-soak to engine-bay extremes. | Use Scenario: Conditioning weak analog sensor outputs (e.g., pressure, temperature) in oil/gas well logging tools exposed to 175 °C ambient. IC Role / Device Role / Timing Role: Low-leakage front-end protection diode preventing ESD damage to precision ADC inputs during cable insertion. Use Value: 150 nA IR at 16 V avoids loading high-Z sensor bridges; hermetic ceramic construction resists H2S and hydrocarbon corrosion. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANS1N5711UBCA/TR | Higher VRWM (50 V), lower IO (33 mA), same VF (0.41 V @ 1 mA), same CT (2.0 pF) | Better suited for higher-voltage detector stages; less current drive capability | Select when reverse voltage exceeds 16 V but average current stays below 33 mA |
| SMJ38510/10701BGA | MIL-PRF-19500/444 JANS-qualified, DO-213AA package, 20 V VRWM, 100 mA IO, VF = 0.55 V @ 10 mA | Higher current, higher VF, plastic-molded package - lower thermal stability and higher leakage at temperature | Select only if higher current is required and ceramic hermeticity is not mandatory |
Compared with JANS1N5711UBCA/TR and SMJ38510/10701BGA, the JANS1N5712UBCA/TR uniquely balances 16 V VRWM, 75 mA IO, and 0.41 V VF in a hermetic ceramic package - making it optimal for dual-path RF detection where leakage, matching, and long-term parameter stability are critical.
Availability
JANS1N5712UBCA/TR is available at Aetrix Electronics and suitable for radar warning receivers, secure SATCOM modems, avionics power clamps, and downhole telemetry systems requiring stable component supply across extended temperature and radiation environments.
Supply support for JANS1N5712UBCA/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANS1N5712UBCA/TR belongs to Microsemi's legacy MIL-PRF-19500/444 Schottky diode product line, engineered specifically for RF detection, phase demodulation, and transient protection in mission-critical platforms where hermeticity and parameter stability are non-negotiable.
FAQ
What is the polarity configuration of JANS1N5712UBCA/TR?
The "CA" suffix in JANS1N5712UBCA/TR denotes Common Anode configuration: two Schottky diodes share a single anode terminal (Pad 1), with independent cathodes on Pads 2 and 3. This enables matched-pair operation in balanced circuits such as phase detectors and differential clamps without external wiring asymmetry. The fourth pad (Pad 4) is a metallized lid shield connected to chassis ground.
Does JANS1N5712UBCA/TR meet MIL-PRF-19500/444 requirements?
Yes, JANS1N5712UBCA/TR is fully qualified to MIL-PRF-19500/444 at the JANS reliability level, including rigorous screening for temperature cycling, hermeticity, burn-in, and parametric testing per Method 5005. It carries full lot traceability and is approved for use in spaceflight, missile guidance, and nuclear command systems where failure is not an option.
What is the maximum average forward current for JANS1N5712UBCA/TR?
The JANS1N5712UBCA/TR supports 75 mA average rectified output current (IO) at case temperature TC = +130 °C. Current must be linearly derated to zero at +150 °C per Note 2 in the datasheet. At 25 °C, the device can sustain higher pulsed currents, but average dissipation remains limited by RθJSP = 100 °C/W and thermal interface design.
How does the ceramic UB package of JANS1N5712UBCA/TR differ from DO-213AA alternatives?
The ceramic UB package of JANS1N5712UBCA/TR provides hermetic sealing, superior thermal stability (-65 °C to +150 °C), and lower long-term parameter drift versus plastic-molded DO-213AA packages. Its metallized lid (Pad 4) acts as an EMI shield, and gold-plated terminals ensure reliable wire bonding and solder wetting - critical for high-reliability avionics and space applications where DO-213AA variants lack screening and environmental robustness.
What is the reverse leakage current specification for JANS1N5712UBCA/TR?
JANS1N5712UBCA/TR exhibits a maximum reverse leakage current (IR) of 150 nA at VR = VRWM = 16 V and 25 °C. Leakage increases with temperature but remains below 10 µA at +125 °C per typical curves in the datasheet. This ultra-low IR preserves signal integrity in high-impedance RF detector and sample-and-hold circuits where even nanoamp-level leakage degrades accuracy.
JANS1N5712UBCA/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io) (per Diode):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JANS1N5712UBCA/TR FAQ
1.How can I place an order for JANS1N5712UBCA/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N5712UBCA/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N5712UBCA/TR reliable?
The price and inventory of JANS1N5712UBCA/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N5712UBCA/TR is usually 5 days.
3.What payment methods are accepted for JANS1N5712UBCA/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N5712UBCA/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N5712UBCA/TR?
JANS1N5712UBCA/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N5712UBCA/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N5712UBCA/TR?
For technical support, including JANS1N5712UBCA/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N5712UBCA/TR requirements.
6.How does Aetrix verify that JANS1N5712UBCA/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N5712UBCA/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N5712UBCA/TR meets industry standards.
7.What is the process for return or replacement of JANS1N5712UBCA/TR?
All JANS1N5712UBCA/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N5712UBCA/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N5712UBCA/TR part is unused and in its original packaging.
Return procedure for JANS1N5712UBCA/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANS1N5712UBCA/TR Tags
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BAV99,215
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BAT54S-7-F
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BAV99LT1G
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