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Microchip Technology JANS1N5804URS/TR
- Part No.:
- JANS1N5804URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JANS1N5804URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:9,090
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Product details
Overview
JANS1N5804URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in hermetically sealed URS package (one square + one round end cap), rated for 100 V working peak reverse voltage, 2.5 A average forward current at TEC = 75 °C, and 25 ns reverse recovery time. It serves as a high-reliability output rectifier in radiation-hardened DC/DC converters for space power systems.
For engineers reviewing the JANS1N5804URS/TR datasheet, JANS1N5804URS/TR pinout, JANS1N5804URS/TR application, or JANS1N5804URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 JANS qualification, voidless glass construction, Category 1 metallurgical bond, and thermal resistance of 13 °C/W junction-to-end cap.
Technical Context
This device is a single-junction silicon planar epitaxial ultrafast recovery rectifier with controlled avalanche capability and quadruple-layer passivation. Its 25 ns reverse recovery time (measured at IF = 0.5 A, IRM = 0.5 A, IR(REC) = 0.05 A) enables efficient operation in high-frequency switching topologies up to 500 kHz.
The hermetic URS package features tungsten slugs and tin/lead terminations, delivering 13 °C/W thermal resistance junction-to-end cap and -65 °C to +175 °C operating temperature range. Its 100 V VRWM rating and 35 A non-repetitive surge current support robust input/output stage protection in mission-critical power supplies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 100 V - Maximum continuous reverse voltage before breakdown; defines safe blocking capability in DC/DC output stages. |
| IO1 @ TEC=75°C | 2.5 A - Continuous average forward current with end-cap heatsinking; supports >30 W rectification at 12 V output. |
| trr | 25 ns - Reverse recovery time under specified test conditions; enables <500 kHz switching without excessive switching loss. |
| RθJEC | 13 °C/W - Thermal resistance from junction to end cap; allows direct mounting to chassis or heat spreader for passive cooling. |
| IFSM | 35 A - Non-repetitive forward surge current (8.3 ms); withstands inrush and fault transients in regulated power supplies. |
| VFM @ 1.0 A | 0.875 V - Forward voltage drop at 1 A pulse; contributes to <2.2 W conduction loss at full rated current. |
| C @ 10 V | 25 pF - Junction capacitance at 10 V reverse bias; minimizes capacitive coupling and EMI in high-dV/dt environments. |
Pinout & Package
Package: URS - Hermetically sealed voidless glass case with one square and one round end cap (per ASME Y14.5M), tungsten slugs, tin/lead terminations, cathode indicated by color band. Weight: 193 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to unregulated input or transformer secondary; must handle 35 A surge without bond wire failure. |
| Cathode | Forward current exit point | Marked by color band; ties to output filter capacitor and load; low-inductance path critical for EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration; ensures >20-year reliability in vacuum and thermal cycling environments. |
| Category 1 metallurgical bond | Gold-tungsten interface providing mechanical integrity and low-resistance contact under shock/vibration up to 100 g. |
| Controlled avalanche capability | Withstands peak reverse power surges without degradation; enables use in clamping and snubber circuits without external TVS. |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) ≥ 100 krad(Si) per MicroNote 050; qualified for LEO/MEO satellite bus power. |
| Quadruple-layer passivation | SiO₂/Si₃N₄/SiO₂/Si₃N₄ stack prevents surface leakage and gate oxide charging in high-voltage bias conditions. |
Applications
| Spacecraft Power Converters | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: Output rectification in 28 V to 5 V isolated DC/DC modules powering FPGAs and ADCs on CubeSat platforms. IC Role / Device Role / Timing Role: Ultrafast recovery rectifier handling 2.5 A continuous output with minimal switching loss and EMI generation. Use Value: 25 ns trr and 25 pF capacitance reduce high-frequency ringing and conducted emissions, easing EMC certification. | Use Scenario: High-reliability secondary-side rectification in pulsed radar transmitter power supplies operating at -55 °C to +125 °C. IC Role / Device Role / Timing Role: Primary output rectifier subjected to repetitive 35 A surge currents during RF pulse bursts. Use Value: 35 A IFSM and 13 °C/W RθJEC enable stable operation without forced air cooling or derating. |
| Nuclear Instrumentation Systems | High-Altitude UAV Power Management |
Use Scenario: Input rectification for radiation-tolerant AC/DC front-ends in neutron detection electronics deployed in reactor containment zones. IC Role / Device Role / Timing Role: First-stage rectifier exposed to gamma radiation fields exceeding 10 krad/h. Use Value: Inherent radiation hardness eliminates need for shielding or derating, reducing system mass and volume. | Use Scenario: Battery-charging rectification in solar-regulated power systems for stratospheric UAVs operating at -65 °C ambient. IC Role / Device Role / Timing Role: Cold-start rectifier maintaining 2.5 A output capability down to -65 °C junction temperature. Use Value: -65 °C to +175 °C TJ/TSTG range and low VF drift ensure stable regulation across extreme thermal gradients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5804URS | Same die, JANTXV qualification level (higher screening than JANS); 100% burn-in and extended life test. | Required for programs specifying MIL-PRF-19500/477 JANTXV level; higher cost and longer lead time. | Select when program mandates JANTXV-level reliability testing beyond JANS requirements. |
| 1N5804URS/TR (commercial) | No MIL-PRF-19500 qualification; RoHS-compliant matte tin terminations; same electrical specs and package. | Suitable only for non-military/non-space commercial designs where radiation tolerance and extended temperature range are not required. | Select for cost-sensitive terrestrial applications with identical form-factor needs but no military spec compliance. |
Compared with JANTXV1N5804URS and 1N5804URS/TR, the JANS1N5804URS/TR provides the optimal balance of flight-qualified reliability (JANS level), radiation hardness, and availability for space-grade power conversion-without the premium screening overhead of JANTXV or the qualification gap of commercial variants.
Availability
JANS1N5804URS/TR is available at Aetrix Electronics and suitable for spacecraft power converters, military radar transmitter supplies, and nuclear instrumentation systems requiring stable component supply across extended product lifecycles.
Supply support for JANS1N5804URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and aerospace-grade analog and discrete components.
The JANS1N5804URS/TR belongs to Microsemi's military-qualified ultrafast rectifier family, designed specifically for mission-critical power conversion in space, defense, and nuclear environments where failure is not an option.
FAQ
What does "JANS" signify in JANS1N5804URS/TR?
The "JANS" prefix indicates qualification to MIL-PRF-19500/477 Level S, the highest military reliability level for discrete semiconductors. JANS1N5804URS/TR undergoes rigorous screening including temperature cycling, hermeticity testing, and lot acceptance testing. This ensures suitability for spaceflight and other zero-failure-tolerance applications where JANS1N5804URS/TR is deployed as a primary rectifier.
How does the URS package differ from US in JANS1N5804URS/TR?
The URS package has one square and one round end cap, while US has two square end caps. Both are hermetically sealed voidless glass packages with tungsten slugs, but URS enables asymmetric thermal mounting-e.g., square end cap soldered to heatsink, round end cap suspended-for optimized thermal path design. JANS1N5804URS/TR leverages this for lower effective RθJA in constrained layouts.
Is JANS1N5804URS/TR radiation hardened?
Yes-JANS1N5804URS/TR is inherently radiation hard due to its silicon planar epitaxial structure and hermetic packaging, with documented performance at ≥100 krad(Si) TID per Microsemi MicroNote 050. Unlike rad-hard-by-design ICs, this hardness is structural and process-based, making JANS1N5804URS/TR suitable for LEO and MEO missions without additional shielding.
What is the maximum allowable junction temperature for JANS1N5804URS/TR?
The absolute maximum junction temperature for JANS1N5804URS/TR is +175 °C, with storage temperature ranging from -65 °C to +175 °C. Derating begins at TEC = 125 °C (50 mA/°C) for IO1 and at TA = 55 °C (8.33 mA/°C) for IO2. These limits ensure long-term stability of the Category 1 metallurgical bond and voidless glass seal in JANS1N5804URS/TR.
Can JANS1N5804URS/TR replace JANS1N5802URS/TR or JANS1N5806URS/TR?
No-JANS1N5804URS/TR is not a drop-in replacement for JANS1N5802URS/TR (50 V VRWM) or JANS1N5806URS/TR (150 V VRWM). While all share identical package, trr, and IFSM, their VRWM and V(BR) differ significantly. Substituting JANS1N5804URS/TR in a 50 V design risks overvoltage stress; in a 150 V design, it risks premature breakdown. Always match VRWM to circuit requirements.
JANS1N5804URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 100 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANS1N5804URS/TR FAQ
1.How can I place an order for JANS1N5804URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N5804URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N5804URS/TR reliable?
The price and inventory of JANS1N5804URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N5804URS/TR is usually 5 days.
3.What payment methods are accepted for JANS1N5804URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N5804URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N5804URS/TR?
JANS1N5804URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N5804URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N5804URS/TR?
For technical support, including JANS1N5804URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N5804URS/TR requirements.
6.How does Aetrix verify that JANS1N5804URS/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N5804URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N5804URS/TR meets industry standards.
7.What is the process for return or replacement of JANS1N5804URS/TR?
All JANS1N5804URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N5804URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N5804URS/TR part is unused and in its original packaging.
Return procedure for JANS1N5804URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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