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Microchip Technology JANS1N5809URS/TR
- Part No.:
- JANS1N5809URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANS1N5809URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:6,332
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Product details
Overview
JANS1N5809URS/TR from Microsemi is a hermetically sealed ultrafast recovery glass rectifier diode rated for 100 V peak reverse voltage, 6.0 A average forward current at 75 °C case temperature, and 30 ns reverse recovery time; it serves as a high-reliability power conversion component in radiation-hardened military and space power supplies.
For engineers reviewing the JANS1N5809URS/TR datasheet, JANS1N5809URS/TR pinout, JANS1N5809URS/TR application, or JANS1N5809URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 JANS qualification, void-less glass package with Category 1 metallurgical bond, 125 A surge current rating, and low thermal resistance (6.5 °C/W junction-to-end-cap).
Technical Context
This JANS1N5809URS/TR device implements an ultrafast recovery PN junction structure optimized for switching power conversion under extreme environmental stress. Its 30 ns trr and 0.875 V forward voltage at 4 A enable efficient high-frequency rectification while maintaining robust avalanche capability and controlled reverse recovery behavior.
The diode uses a tungsten-slug–based hermetic glass package with one square and one round end cap (URS configuration), tin/lead terminations, and blue body marking. It achieves 6.5 °C/W junction-to-end-cap thermal resistance and operates across –65 °C to +175 °C junction temperature range per MIL-PRF-19500/477 Level JANS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 100 V - Maximum continuous reverse voltage before breakdown; defines safe operating limit in DC-link or output rectification stages. |
| IO1 @ TL = 75 °C | 6.0 A - Sustained average forward current with 3/8″ lead length; enables compact heatsinking in conduction-limited designs. |
| trr | 30 ns - Time to recover from forward conduction to blocking state; critical for minimizing switching losses in >100 kHz SMPS. |
| VFM @ 4 A | 0.875 V - Forward voltage drop at rated pulse current; directly impacts conduction loss and thermal design margin. |
| RθJEC | 6.5 °C/W - Junction-to-end-cap thermal resistance; allows direct mounting to cold plates or chassis for high-power dissipation. |
| IFSM | 125 A - Non-repetitive peak forward surge current (8.3 ms); supports inrush current handling in power-up sequences. |
| CJ @ 10 V | 60 pF - Junction capacitance at 1 MHz; influences high-frequency noise coupling and snubber design requirements. |
Pinout & Package
Package: Hermetically sealed void-less glass "URS" configuration - one square end cap and one round end cap; tungsten slugs; tin/lead terminations; blue body marking; cathode indicated by band; weight 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input/source side of rectifier bridge or DC-DC stage; must withstand 125 A surge without bond failure. |
| Cathode | Forward current exit point | Marked by blue band; connects to load/positive rail; carries full output current and defines reverse blocking polarity. |
Key Features
| Feature | Design Value |
|---|---|
| Void-less hermetic glass seal | Eliminates internal moisture and particle ingress; ensures long-term reliability in vacuum, radiation, and thermal cycling environments. |
| Category 1 metallurgical bond | Provides mechanical integrity and thermal stability at solder joints under shock/vibration; qualified per MIL-PRF-19500/477. |
| Quadruple-layer passivation | Enhances surface insulation and prevents leakage path formation on glass surface under high humidity or contamination. |
| Controlled avalanche capability | Supports safe energy absorption during transient overvoltage events without catastrophic failure; peak reverse power specified. |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050; suitable for TID > 100 krad(Si) and SEE-immune operation in LEO/GEO orbits. |
Applications
| Spacecraft Power Distribution | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: Rectifying DC bus in satellite solar array regulators and battery charge controllers exposed to vacuum and total ionizing dose. IC Role / Device Role / Timing Role: Ultrafast power rectifier enabling high-efficiency, radiation-tolerant DC-DC conversion with minimal EMI generation. Use Value: 30 ns trr and 100 V VRWM support 200 kHz+ switching frequencies while maintaining JANS-level reliability and 175 °C junction operation. | Use Scenario: Output rectification in pulsed high-voltage modulator supplies for airborne radar transmitters requiring rapid turn-off and surge resilience. IC Role / Device Role / Timing Role: High-current, fast-recovery diode handling repetitive 125 A surges and sustaining 6 A average load in compact, conduction-cooled modules. Use Value: 6.5 °C/W RθJEC enables direct end-cap mounting to aluminum chassis, eliminating need for thermal interface materials in constrained SWaP-C systems. |
| Tactical Vehicle DC-DC Converters | Nuclear Instrumentation Power Supplies |
Use Scenario: Input rectification in 28 V vehicle-mounted DC-DC converters subjected to wide ambient temperature swings (–55 °C to +125 °C) and mechanical shock. IC Role / Device Role / Timing Role: MIL-qualified rectifier providing stable forward conduction and reverse blocking across extended temperature range with no derating below –65 °C. Use Value: –65 °C to +175 °C TJ/TSTG rating and JANS qualification ensure uninterrupted operation during cold-soak and engine-bay thermal transients. | Use Scenario: Precision HV bias supply rectification in radiation detection front-ends where leakage current and parametric stability are critical. IC Role / Device Role / Timing Role: Low-leakage (5 µA max @ VRWM), low-capacitance (60 pF) rectifier minimizing signal distortion and dark current contribution. Use Value: 5 µA IR at 100 V and stable CJ enable accurate charge integration in scintillation and semiconductor detector bias networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5809URS/TR | Same electrical specs but qualified to JANTXV level (enhanced screening, 100% lot testing); higher cost and longer lead time. | Required for programs mandating JANTXV screening per MIL-PRF-19500/477; not necessary if JANS-level reliability suffices. | Select JANTXV1N5809URS/TR only when system-level qualification requires enhanced burn-in and parametric testing beyond JANS. |
| 1N5809US | Commercial-grade version; same URS package and 100 V/6 A ratings but unqualified to MIL-PRF-19500; RoHS-compliant option available. | Suitable for non-military industrial prototypes or cost-sensitive test fixtures where radiation hardness and extended temperature are not required. | Choose 1N5809US for early-stage development or commercial subsystems where MIL-spec is not mandated. |
Compared with JANTXV1N5809URS/TR and 1N5809US, the JANS1N5809URS/TR delivers optimal balance of flight-qualified reliability, radiation tolerance, and procurement availability for space-qualified hardware without over-specifying screening or sacrificing performance.
Availability
JANS1N5809URS/TR is available at Aetrix Electronics and suitable for spacecraft power distribution, military radar transmitter supplies, and nuclear instrumentation requiring stable component supply with guaranteed traceability and long-term obsolescence management.
Supply support for JANS1N5809URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor manufacturer specializing in high-reliability, radiation-hardened, and aerospace-grade analog and discrete components.
The JANS1N5809URS/TR belongs to Microsemi's MIL-qualified ultrafast rectifier family designed specifically for mission-critical power conversion in defense, space, and nuclear applications where failure is not an option.
FAQ
What is the maximum junction temperature rating for JANS1N5809URS/TR?
The JANS1N5809URS/TR has a specified junction and storage temperature range of –65 °C to +175 °C per MIL-PRF-19500/477. This rating is validated through thermal cycling and high-temperature life testing, and it applies across all JANS-level screening conditions. The 175 °C upper limit enables operation in high-ambient environments such as engine bays or sealed avionics enclosures without thermal derating penalties beyond those defined in the datasheet curves.
Does JANS1N5809URS/TR have radiation hardness certification?
Yes, JANS1N5809URS/TR is inherently radiation hard per Microsemi MicroNote 050, with documented performance under total ionizing dose (TID) and single-event effects (SEE) testing. It is not individually certified per MIL-STD-883 method 1019, but its construction-void-less glass, Category 1 bonds, and quadruple passivation-provides proven hardness for LEO and GEO missions. Radiation data for the 1N58xx family is published in Microsemi's space reliability reports.
What does "URS" signify in JANS1N5809URS/TR?
"URS" denotes the package configuration: one square end cap and one round end cap, distinguishing it from "US" (two square end caps). This geometry is defined in Microsemi's nomenclature guide and affects PCB pad layout and mechanical mounting. The URS variant maintains identical electrical specifications and thermal performance as US versions but provides different mechanical registration for automated placement and chassis-mounting alignment in high-reliability assemblies.
Is JANS1N5809URS/TR RoHS compliant?
No, JANS1N5809URS/TR is not RoHS compliant. Its terminations use tin/lead (Sn/Pb) plating per MIL-PRF-19500/477 JANS requirements. RoHS-compliant versions (e3 suffix) are available only in commercial-grade variants like 1N5809US(e3); JANS-level devices retain Sn/Pb for proven solder joint reliability under thermal cycling and mechanical stress in mission-critical systems.
How is the cathode identified on JANS1N5809URS/TR?
The cathode of JANS1N5809URS/TR is marked by a blue color band on the glass body, consistent with JEDEC and MIL-PRF-19500/477 marking standards. This band is applied to the cathode-end side of the device and is visible regardless of orientation. Per datasheet note 5, alternative cathode markings-including three equally spaced dots or a color dot on the face of the end tab-are permitted but the blue band is standard for JANS1N5809URS/TR units shipped by Microsemi.
JANS1N5809URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 100 V
- Capacitance @ Vr, F:
- 60pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANS1N5809URS/TR FAQ
1.How can I place an order for JANS1N5809URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N5809URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N5809URS/TR reliable?
The price and inventory of JANS1N5809URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N5809URS/TR is usually 5 days.
3.What payment methods are accepted for JANS1N5809URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N5809URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N5809URS/TR?
JANS1N5809URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N5809URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N5809URS/TR?
For technical support, including JANS1N5809URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N5809URS/TR requirements.
6.How does Aetrix verify that JANS1N5809URS/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N5809URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N5809URS/TR meets industry standards.
7.What is the process for return or replacement of JANS1N5809URS/TR?
All JANS1N5809URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N5809URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N5809URS/TR part is unused and in its original packaging.
Return procedure for JANS1N5809URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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