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Microchip Technology JANS1N5811URS/TR
- Part No.:
- JANS1N5811URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANS1N5811URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:6,074
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Product details
Overview
JANS1N5811URS/TR from Microsemi is a hermetically sealed ultrafast recovery glass rectifier diode rated for 6.0 A average forward current at 75 °C, 150 V working peak reverse voltage, and 30 ns reverse recovery time; used in high-reliability military power conversion where failure tolerance and radiation hardness are critical.
For engineers reviewing the JANS1N5811URS/TR datasheet, JANS1N5811URS/TR pinout, JANS1N5811URS/TR application, or JANS1N5811URS/TR equivalent, key selection criteria include MIL-PRF-19500/477 JANS qualification, void-less glass MELF URS package with square/round end caps, controlled avalanche capability, and thermal resistance of 6.5 °C/W junction-to-end cap.
Technical Context
This JANS1N5811URS/TR is a Category 1 metallurgically bonded, quadruple-layer passivated, ultrafast recovery rectifier optimized for switching power supplies requiring low forward voltage (0.875 V max @ 4 A) and fast turn-off (30 ns trr). It operates across –65 °C to +175 °C junction temperature range with 60 pF capacitance at 10 V reverse bias.
The device uses a hermetic void-less glass construction with tungsten slugs and tin/lead terminals, enabling radiation hardness per MicroNote 050 and high surge robustness (125 A IFSM). Its URS package features one square and one round end cap, distinguishing it from US (dual square) variants.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 150 V - Maximum continuous reverse voltage before breakdown; defines safe operating margin in DC-link and output rectification stages. |
| IO1 @ TL=75°C | 6.0 A - Sustained average forward current with end-cap heatsinking; enables compact high-power SMPS designs without forced air. |
| trr | 30 ns - Time to recover from conduction to blocking state; minimizes switching losses in >100 kHz converters. |
| VFM @ 4 A | 0.875 V - Peak forward voltage under pulsed load; reduces conduction loss and thermal stress vs. standard Schottky alternatives. |
| RθJEC | 6.5 °C/W - Junction-to-end-cap thermal resistance; supports direct mounting to metal chassis or heat spreaders for passive cooling. |
| IFSM | 125 A - Non-repetitive surge current rating; withstands inrush and fault transients in avionics and space power systems. |
| CJ @ 10 V | 60 pF - Junction capacitance at 1 MHz; limits high-frequency noise coupling and EMI in sensitive RF-adjacent circuits. |
Pinout & Package
Package: Hermetically sealed void-less glass MELF "URS" configuration - one square end cap and one round end cap; cathode indicated by blue band; weight 539 mg; RoHS-compliant terminations not available for JANS grade.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input source or transformer secondary; must handle 125 A surge without bond-wire fusing. |
| Cathode | Forward current exit point | Marked by blue band; interfaces with output filter capacitor and load; designed for controlled avalanche during transient overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| Category 1 metallurgical bond | Ensures mechanical integrity and thermal cycling reliability over –65 °C to +175 °C in vacuum or pressurized enclosures. |
| Quadruple-layer passivation | Prevents surface leakage and moisture ingress under high humidity or condensation, critical for long-duration space missions. |
| Controlled avalanche capability | Allows safe clamping of inductive kickback up to peak reverse power limit without degradation, eliminating need for external TVS. |
| Void-less hermetic seal | Eliminates internal delamination risk under thermal shock or vibration, meeting MIL-PRF-19500/477 JANS screening requirements. |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050; suitable for TID > 100 krad(Si) environments without derating or shielding. |
Applications
| Avionics Power Distribution | Satellite DC-DC Converters |
|---|---|
Use Scenario: Rectifying 28 V or 115 V AC-to-DC converter outputs in flight control electronics with zero-failure tolerance. IC Role / Device Role / Timing Role: Ultrafast recovery rectifier providing primary output isolation and efficiency in multi-output forward converters. Use Value: 30 ns trr and 0.875 V VF reduce switching loss and thermal rise, enabling conduction-cooled packaging in constrained airframes. | Use Scenario: Output rectification in radiation-hardened 200–500 kHz isolated DC-DC modules powering FPGAs and telemetry subsystems. IC Role / Device Role / Timing Role: High-reliability power semiconductor handling 6 A continuous load with immunity to single-event burnout. Use Value: JANS qualification and inherent radiation hardness eliminate need for shielding or redundancy, saving mass and volume. |
| Ground-Based Radar Transmitters | Nuclear Instrumentation Systems |
Use Scenario: Pulse-forming network (PFN) charging and modulator supply rectification in high-power S-band radar transmitters. IC Role / Device Role / Timing Role: Surge-tolerant rectifier managing repetitive 125 A inrush pulses while maintaining stable reverse blocking at 150 V. Use Value: 125 A IFSM and 6.5 °C/W RθJEC enable reliable operation without active cooling during duty-cycle-limited bursts. | Use Scenario: Primary power conditioning in reactor monitoring systems requiring decades-long unattended operation in high-radiation zones. IC Role / Device Role / Timing Role: Hermetic glass rectifier delivering fail-safe DC bus generation under gamma and neutron flux exposure. Use Value: Void-less seal and Category 1 bond prevent parametric drift or catastrophic failure after cumulative TID exposure > 300 krad(Si). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5811URS/TR | Same electrical specs and URS package; qualified to JANTXV level (higher screening than JANS, including 100% burn-in and extended life test). | Used where extended reliability validation beyond JANS is mandated (e.g., DoD Class H programs). | Select when program spec requires JANTXV-level screening; JANS1N5811URS/TR remains optimal for JANS-tier compliance. |
| 1N5811URS/TR (commercial) | Identical package and pinout; lacks MIL-PRF-19500/477 qualification; no radiation hardness validation; RoHS-compliant terminations optional. | Suitable for non-military industrial or test equipment where cost and lead time outweigh radiation/longevity needs. | Choose only for commercial-grade prototyping or non-critical systems; JANS1N5811URS/TR required for flight or mission-critical use. |
Compared with JANTXV1N5811URS/TR, JANS1N5811URS/TR offers lower screening rigor but meets full JANS requirements for space-qualified hardware; versus commercial 1N5811URS/TR, it guarantees hermeticity, radiation tolerance, and lifetime reliability under MIL-spec environmental stress.
Availability
JANS1N5811URS/TR is available at Aetrix Electronics and suitable for avionics power distribution, satellite DC-DC converters, and nuclear instrumentation systems requiring stable component supply across extended product lifecycles.
Supply support for JANS1N5811URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discretes, and RF solutions for aerospace, defense, and industrial markets.
The JANS1N5811URS/TR belongs to Microsemi's military-qualified ultrafast rectifier family, engineered specifically for radiation-tolerant, hermetically sealed power conversion in mission-critical platforms where failure is not an option.
FAQ
What does the 'URS' suffix indicate in JANS1N5811URS/TR?
The 'URS' suffix denotes the MELF package variant with one square and one round end cap, as defined in Microsemi's nomenclature guide. This distinguishes JANS1N5811URS/TR from US (dual square) and axial-leaded versions. The URS configuration ensures mechanical stability during automated placement and provides optimized thermal path via the square end cap. JANS1N5811URS/TR uses this package to meet MIL-PRF-19500/477 mechanical and thermal requirements.
Is JANS1N5811URS/TR RoHS compliant?
No, JANS1N5811URS/TR is not RoHS compliant. Per the datasheet, RoHS-compliant terminations (matte tin) are available only on commercial-grade versions. JANS1N5811URS/TR uses traditional tin/lead (Sn/Pb) terminations to ensure solder joint reliability under extreme thermal cycling and mechanical shock, consistent with MIL-PRF-19500/477 JANS qualification requirements.
What is the maximum junction temperature rating for JANS1N5811URS/TR?
JANS1N5811URS/TR has a specified junction and storage temperature range of –65 °C to +175 °C. This wide range supports operation in cryogenic avionics bays and high-temperature engine-mounted electronics. Derating begins at 75 °C for end-cap heatsinking (60 mA/°C), and JANS1N5811URS/TR maintains full electrical performance across its entire qualified temperature envelope.
How does JANS1N5811URS/TR differ from commercial 1N5811US?
JANS1N5811URS/TR differs from commercial 1N5811US in three key ways: (1) hermetic void-less glass construction with Category 1 metallurgical bond, (2) full MIL-PRF-19500/477 JANS qualification including screening tests, and (3) radiation hardness validated per MicroNote 050. The URS package also differs physically from US. JANS1N5811URS/TR is not a drop-in replacement for 1N5811US in non-military designs due to these structural and qualification differences.
Can JANS1N5811URS/TR be used in place of JANS1N5811US in a design?
No - JANS1N5811URS/TR and JANS1N5811US are distinct packages: URS has one square and one round end cap, while US has two square end caps. Their pad layouts and mechanical mounting requirements differ. Substituting JANS1N5811URS/TR for JANS1N5811US would require PCB redesign. JANS1N5811URS/TR is intended for applications needing its specific thermal and mechanical interface, not as a generic substitute for US variants.
JANS1N5811URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 150 V
- Capacitance @ Vr, F:
- 60pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANS1N5811URS/TR FAQ
1.How can I place an order for JANS1N5811URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N5811URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N5811URS/TR reliable?
The price and inventory of JANS1N5811URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N5811URS/TR is usually 5 days.
3.What payment methods are accepted for JANS1N5811URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N5811URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N5811URS/TR?
JANS1N5811URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N5811URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N5811URS/TR?
For technical support, including JANS1N5811URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N5811URS/TR requirements.
6.How does Aetrix verify that JANS1N5811URS/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N5811URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N5811URS/TR meets industry standards.
7.What is the process for return or replacement of JANS1N5811URS/TR?
All JANS1N5811URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N5811URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N5811URS/TR part is unused and in its original packaging.
Return procedure for JANS1N5811URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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