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Microchip Technology JANS1N6641US/TR
- Part No.:
- JANS1N6641US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, D
- Datasheet:
-
JANS1N6641US/TR.pdf
- Description:
- SIGNAL OR COMPUTER DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:8,102
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Product details
Overview
JANS1N6641US/TR from Microsemi is a hermetically sealed, axial-lead silicon switching diode in a D-5D glass package, rated for 75 V reverse working voltage (VRWM), 200 mA forward current (IF), 1.10 V forward voltage at 200 mA, and 5.0 ns reverse recovery time (tRR) at IF = 10 mA, VR = VRWM, RL = 100 Ω - used in high-reliability military timing, pulse shaping, and clamping circuits.
For engineers reviewing the JANS1N6641US/TR datasheet, JANS1N6641US/TR pinout, JANS1N6641US/TR application, or JANS1N6641US/TR equivalent, key selection criteria include its MIL-PRF-19500/609 qualification, -65°C to +175°C operating temperature range, 2.5 A surge current rating, 3.0 pF junction capacitance at VR = 0, and metallurgically bonded construction for radiation-tolerant environments.
Technical Context
This device operates as a fast-switching, low-capacitance diode optimized for transient suppression and signal routing in aerospace and defense electronics where thermal stability and long-term reliability under extreme temperature cycling are mandatory. Its 5.0 ns tRR and 3.0 pF CT support sub-microsecond edge fidelity in pulse generators and sample-and-hold circuits.
The JANS1N6641US/TR uses a non-cavity glass package with tin/lead lead finish and a +4 ppm/°C coefficient of expansion, requiring matched-mounting surfaces to minimize thermomechanical stress. It is specified per MIL-PRF-19500/609 Class S (JANS) for space-level screening including burn-in, temperature cycling, and hermeticity testing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 75 V peak reverse working voltage - defines maximum continuous DC reverse bias before significant leakage or breakdown. |
| IF (max) | 200 mA average forward current - supports sustained signal routing or clamping without thermal runaway at TEC ≤ +110°C. |
| VF @ 200 mA | 1.10 V - low conduction loss enables efficient level shifting and logic interface protection in low-voltage systems. |
| tRR | 5.0 ns - enables clean switching in >100 MHz pulse applications such as radar modulators and digital waveform conditioning. |
| CT @ 0 V | 3.0 pF - minimizes capacitive loading on high-speed nodes, preserving rise/fall times in RF sampling and trigger circuits. |
| Operating Temp | -65°C to +175°C - qualified for use in engine-mounted avionics, missile guidance, and downhole instrumentation without derating. |
Pinout & Package
Package: D-5D, hermetically sealed glass case per MIL-PRF-19500/609; axial leads with cathode band marking; lead finish: tin/lead; thermal resistance ROJEC = 50 °C/W max (L = 0).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node during conduction; requires trace width and thermal relief compatible with 200 mA steady-state current. |
| Cathode (banded end) | Forward current exit / reverse blocking terminal | Banded marking identifies polarity for manual assembly and automated optical inspection; critical for correct orientation in clamp and protection circuits. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/609 Class S (JANS) | Meets full space-level screening: 100% lot acceptance testing, 168-hour burn-in, and hermeticity per MIL-STD-883 Method 1014. |
| Metallurgical bond construction | Eliminates wire bonds and epoxy interfaces, improving resistance to vibration, thermal shock, and neutron irradiation. |
| +4 ppm/°C COE match guidance | Enables reliable solder joint integrity on aluminum nitride or Kovar substrates in hybrid microcircuits. |
| Non-cavity glass package | Prevents internal moisture ingress and particle generation, supporting >20-year field life in sealed modules. |
Applications
| Radar Pulse Modulator | Avionics Power Sequencing |
|---|---|
Use Scenario: Fast turn-off of high-voltage gate drive pulses in X-band magnetron modulators. IC Role / Device Role / Timing Role: Clamping diode in series-connected pulse transformer secondary to limit negative flyback voltage swing. Use Value: 5.0 ns tRR ensures minimal pulse distortion; 75 V VRWM withstands 60 V nominal rail transients with 20% margin. | Use Scenario: Controlled power-up sequencing across dual 28 V aircraft bus domains with isolation between analog and digital subsystems. IC Role / Device Role / Timing Role: OR-ing diode in discrete power path management, preventing backfeed during hot-swap transitions. Use Value: 1.10 V VF at 200 mA enables <100 mW dissipation per diode; -65°C to +175°C rating supports operation in unheated wing bays. |
| Satellite Telemetry Signal Conditioning | Nuclear Instrumentation Front-End |
Use Scenario: ESD and transient protection for 10 Mbps Manchester-encoded telemetry signals routed through launch vehicle harnesses. IC Role / Device Role / Timing Role: Low-capacitance shunt protector at receiver input, placed immediately after connector interface. Use Value: 3.0 pF CT avoids signal integrity degradation; JANS screening guarantees zero latent defects in mission-critical data links. | Use Scenario: Pulse height discrimination in gamma spectroscopy front-end preamplifiers exposed to neutron flux. IC Role / Device Role / Timing Role: Fast recovery switch in baseline restorer circuit that resets integrator between detector events. Use Value: Metallurgical bonding and glass encapsulation provide immunity to displacement damage; 5.0 ns tRR preserves <10 ns pulse resolution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6641US | Same electrical specs but screened to JANTXV (Class V) with tighter parameter limits and extended life test coverage. | Preferred for flight-critical subsystems requiring higher confidence in parametric drift over 15+ year missions. | Select JANTXV1N6641US when mission assurance requirements exceed Class S screening thresholds. |
| 1N6641US (commercial) | Identical die and package but without MIL-PRF-19500/609 screening; no burn-in, temperature cycling, or hermeticity testing. | Suitable only for ground-test fixtures or non-flight hardware where cost and lead time outweigh reliability demands. | Choose 1N6641US only for prototyping or non-qualification-burdened development platforms. |
Compared with JANS1N6641US/TR, JANTXV1N6641US offers enhanced lifetime reliability verification at higher cost and longer lead time, while the commercial 1N6641US sacrifices all military-grade screening - making JANS1N6641US/TR the optimal balance of assured performance, availability, and qualification rigor for production flight hardware.
Availability
JANS1N6641US/TR is available at Aetrix Electronics and suitable for radar modulators, avionics power sequencers, and satellite telemetry interfaces requiring stable component supply across extended production lifecycles and obsolescence-sensitive programs.
Supply support for JANS1N6641US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing radiation tolerance, extended temperature operation, and long-term supply chain stability.
The JANS1N6641US/TR belongs to Microsemi's MIL-PRF-19500/609-qualified switching diode family, engineered specifically for high-speed, high-temperature signal routing and transient control in mission-critical electronic systems.
FAQ
What is the maximum surge current rating for JANS1N6641US/TR?
The JANS1N6641US/TR has a peak surge current rating of 2.5 A with an 8.3 ms pulse width, per MIL-PRF-19500/609. This rating applies under single-pulse conditions and supports robustness against inductive kickback in relay drivers and pulse transformer circuits. The JANS1N6641US/TR maintains this capability across its full -65°C to +175°C operating range without derating.
Is JANS1N6641US/TR suitable for space applications?
Yes, JANS1N6641US/TR is qualified to MIL-PRF-19500/609 Class S (JANS), which includes full space-level screening: 100% lot acceptance tests, 168-hour burn-in, temperature cycling (-65°C to +175°C), and fine/hermetic leak testing. The JANS1N6641US/TR is approved for use in LEO and GEO satellite subsystems where radiation hardness and long-term parametric stability are required.
What does the "TR" suffix indicate in JANS1N6641US/TR?
The "TR" suffix denotes tape-and-reel packaging per MIL-STD-1285, with 250 units per reel. This format supports automated placement in high-reliability hybrid microcircuit assembly and ensures traceability via reel labeling compliant with DoD standards. The JANS1N6641US/TR in TR packaging retains identical electrical and environmental specifications as the bulk version.
How does the thermal resistance of JANS1N6641US/TR affect PCB layout?
JANS1N6641US/TR has a maximum thermal resistance ROJEC of 50 °C/W at L = 0 (zero lead length), meaning PCB pads must provide adequate copper area and thermal vias to maintain junction temperature below +175°C under 200 mA DC load. The JANS1N6641US/TR requires symmetric pad geometry and matched substrate CTE to avoid interfacial stress cracking during thermal cycling.
Can JANS1N6641US/TR replace JANS1N6640US in existing designs?
JANS1N6641US/TR and JANS1N6640US share identical package, polarity marking, and screening level, but differ in VRWM (75 V vs. 50 V) and VF (1.10 V vs. 0.87–1.00 V). The JANS1N6641US/TR may be substituted where higher reverse voltage margin is needed, but designers must verify that the 0.1–0.2 V higher forward drop does not impact power budget or logic threshold compatibility in the JANS1N6641US/TR application.
JANS1N6641US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, D
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 300mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/609
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5D
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANS1N6641US/TR FAQ
1.How can I place an order for JANS1N6641US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANS1N6641US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANS1N6641US/TR reliable?
The price and inventory of JANS1N6641US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANS1N6641US/TR is usually 5 days.
3.What payment methods are accepted for JANS1N6641US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANS1N6641US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANS1N6641US/TR?
JANS1N6641US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANS1N6641US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANS1N6641US/TR?
For technical support, including JANS1N6641US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANS1N6641US/TR requirements.
6.How does Aetrix verify that JANS1N6641US/TR is sourced from the original manufacturer or authorized distributors?
All JANS1N6641US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANS1N6641US/TR meets industry standards.
7.What is the process for return or replacement of JANS1N6641US/TR?
All JANS1N6641US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANS1N6641US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANS1N6641US/TR part is unused and in its original packaging.
Return procedure for JANS1N6641US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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