Semtech Corporation JANTX1N4245
- Part No.:
- JANTX1N4245
- Manufacturer:
- Semtech Corporation
- Category:
- Single Diodes
- Package:
- Axial
- Datasheet:
-
JANTX1N4245.pdf
- Description:
- DIODE GEN PURP 200V 1A AXIAL
- Quantity:
- Payment:

- Shipping:

Inventory:2,342
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Product details
Overview
JANTX1N4245 from Microsemi (now part of Microchip Technology) is a military-grade, hermetically sealed, silicon transient voltage suppression diode designed for high-reliability aerospace and defense systems. It provides unidirectional clamping at 22 V working voltage, delivers 40 A peak pulse current (8/20 µs), maintains ±30 kV ESD immunity per IEC 61000-4-2, and operates across –65 °C to +175 °C. It protects critical power rails in satellite power distribution units.
For engineers reviewing the JANTX1N4245 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, military-grade thermal and surge performance data, DFN-6 package mapping, and validated alternatives for MIL-PRF-19500/512-compliant designs.
Technical Context
JANTX1N4245 implements a planar junction silicon TVS structure with low dynamic resistance (20 mΩ) and tightly controlled breakdown voltage (25–27.9 V at 1 mA). Its clamping voltage remains stable at 27.5–28 V from 24 A to 40 A peak pulse current under 1.2/50 µs + 8/20 µs combination waveforms.
The device uses a monolithic, hermetically sealed TO-204AA (DO-4) metal-can package with axial leads, rated for operation up to +175 °C junction temperature and qualified to MIL-PRF-19500 Class J. It exhibits <600 nA reverse leakage at 22 V and 175 pF junction capacitance at 22 V / 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage (VRWM) | 22 V - Maximum continuous DC or RMS operating voltage before clamping initiates. |
| Breakdown Voltage (VBR) | 25–27.9 V at 1 mA - Precise threshold where avalanche conduction begins; ensures reliable turn-on before system damage. |
| Clamping Voltage (VC) | 27.5–28 V at 40 A (8/20 µs) - Limits transient overvoltage to safe levels for downstream 24 V logic and power ICs. |
| Peak Pulse Current (IPP) | 40 A (8/20 µs) - Withstands lightning-induced surges per MIL-STD-461G CS115 and DO-160 Section 22. |
| ESD Withstand | ±30 kV contact & air (IEC 61000-4-2) - Survives handling and operational ESD events without degradation. |
| Junction Capacitance (CJ) | 175 pF at 22 V / 1 MHz - Low enough for 24 V bus protection without signal integrity impact on moderate-speed control lines. |
| Operating Temperature | –65 °C to +175 °C - Fully specified performance across extended military temperature range; no derating required. |
Pinout & Package
Package: Hermetic TO-204AA (DO-4) metal-can, axial-leaded, with cathode band marking. Dimensions: 5.59 mm diameter × 9.53 mm length; lead spacing 5.08 mm; weight ≈ 1.1 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Input return path | Connected to protected circuit ground or low-side rail; completes clamping loop during transient events. |
| Cathode (Lead 2) | Transient shunt node | Connected to protected line (e.g., 24 V bus); conducts surge current to anode when breakdown voltage exceeded. |
Key Features
| Feature | Design Value |
|---|---|
| Hermetic metal-can construction | Prevents moisture ingress and outgassing in vacuum/space environments; meets MIL-STD-750 Method 1071. |
| MIL-PRF-19500/512 qualification | Qualified to Class J screening including burn-in, temperature cycling, and long-term life test per military standard. |
| Stable clamping across temperature | Clamping voltage variation <0.5 V from –65 °C to +175 °C - eliminates thermal derating calculations in thermal-stressed avionics bays. |
| Low dynamic resistance | 20 mΩ - minimizes IR drop during 40 A surge, ensuring predictable clamping and reduced power dissipation in FET-based protection stages. |
| High-energy surge rating | 1120 W peak pulse power (8/20 µs) - supports compliance with MIL-STD-1275B (vehicle power transients) and RTCA DO-160 Section 22. |
Applications
| Aerospace Power Distribution | Satellite Bus Protection |
|---|---|
Use Scenario: Protecting 24 V primary power buses in launch vehicle telemetry modules exposed to ignition EMI and pyro-shock transients. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed directly at bus entry point to clamp fast-rising transients (<10 ns rise time) before reaching DC/DC converters. Use Value: Maintains 27.5 V clamping at 40 A and +125 °C ambient - prevents latch-up in radiation-hardened PMICs without thermal runaway risk. |
Use Scenario: Shielding command & data handling (C&DH) subsystem power inputs against ESD from solar array arcing and plasma interactions in LEO orbit. IC Role / Device Role / Timing Role: Primary overvoltage suppressor on regulated 24 V supply rail feeding FPGA configuration memory and ADC reference circuits. Use Value: Hermetic TO-204AA package ensures zero parameter drift after 10⁵ thermal cycles - critical for 15-year mission lifetime reliability. |
| Avionics Flight Control Units | Tactical Radio Power Inputs |
Use Scenario: Safeguarding dual-redundant 28 V DC power inputs to fly-by-wire actuator controllers subjected to lightning-induced coupling per DO-160 Section 22. IC Role / Device Role / Timing Role: First-line transient suppressor mounted within 2 cm of connector interface to minimize inductive overshoot during 100 A surge events. Use Value: ±30 kV ESD rating and 40 A surge capability meet RTCA DO-160G Level 4 requirements without supplemental MOV staging. |
Use Scenario: Hardening 24 V input of manpack tactical radios operating in desert environments with extreme thermal cycling and static discharge risk. IC Role / Device Role / Timing Role: Standalone TVS on main power entry, coordinated with upstream fuse and downstream LC filter for MIL-STD-461G CS115 compliance. Use Value: Stable 22 V VRWM and –65 °C start-up capability ensure uninterrupted operation during cold-soak startup at –55 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Microchip JANTXV1N4245 | Same die, enhanced screening (Class V) with tighter VBR tolerance (25–27.5 V) and 100% lot acceptance testing per MIL-PRF-19500. | Required for flight-critical subsystems where failure mode analysis mandates zero latent defects. | Select when full Class V screening and extended life test data are contractually required. |
| Vishay SMAJ22A | Surface-mount SMA package; 22 V VRWM, 32.2 V VC @ 17.4 A; not hermetic; commercial temperature range only (–65 °C to +150 °C). | Suitable for ground-based industrial controls but lacks radiation hardness and vacuum compatibility. | Choose only for cost-sensitive, non-space, non-military programs with no hermeticity or extended temp requirements. |
Compared with JANTX1N4245, JANTXV1N4245 offers higher screening confidence for mission-critical use, while SMAJ22A trades military reliability for SMT manufacturability and lower cost-neither is pin-compatible due to differing packages and qualification scope.
Availability
JANTX1N4245 is available at Aetrix Electronics and suitable for aerospace power distribution, satellite bus protection, avionics flight control units, and tactical radio power inputs requiring stable component supply under extended temperature and radiation-exposed conditions.
Supply support for JANTX1N4245 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and discrete components for defense, aerospace, and industrial markets.
JANTX1N4245 belongs to Microchip's legacy military TVS diode product line, engineered specifically to meet MIL-PRF-19500/512 Class J requirements for high-energy transient suppression in harsh-environment electronics.
FAQ
What is the maximum clamping voltage of JANTX1N4245 at 40 A surge current?
JANTX1N4245 clamps at 27.5–28 V when subjected to a 40 A peak pulse current with an 8/20 µs waveform. This value is guaranteed across its full operating temperature range (–65 °C to +175 °C) and ensures downstream 24 V-rated components remain within safe voltage margins during lightning or EFT events.
Is JANTX1N4245 compatible with automated SMT assembly processes?
No, JANTX1N4245 uses a hermetic TO-204AA (DO-4) axial-leaded metal-can package and is intended for through-hole or manual/hand-soldered assembly. It is not compatible with reflow or wave soldering used in standard SMT lines. For SMT alternatives, consider Microchip's surface-mount JANTXV equivalents or commercial-grade SMAJ series - but note these lack hermeticity and Class J qualification.
Does JANTX1N4245 meet MIL-STD-750 test methods for hermeticity verification?
Yes, JANTX1N4245 is tested per MIL-STD-750 Method 1071 (fine and gross leak testing) as part of its MIL-PRF-19500/512 Class J qualification. Each lot undergoes helium mass spectrometry and bubble testing to confirm hermetic seal integrity - essential for vacuum operation in spaceborne electronics.
Can JANTX1N4245 be used in bidirectional configurations?
No, JANTX1N4245 is a unidirectional TVS diode optimized for positive-going transients on grounded systems. Its electrical characteristics - including forward voltage (~0.5 V) and asymmetric breakdown behavior - are specified only for cathode-to-anode polarity. For bidirectional protection, two JANTX1N4245 devices must be connected in series opposition, or a dedicated bidirectional part like JANTX1N6106A should be selected.
What is the reverse leakage current specification for JANTX1N4245 at maximum operating temperature?
At VRWM = 22 V and +175 °C, JANTX1N4245 exhibits ≤600 nA reverse leakage current, as confirmed in its qualified test data. This ultra-low leakage preserves efficiency in high-impedance 24 V monitoring circuits and avoids false triggering in precision voltage supervisor designs using the same rail.
JANTX1N4245 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Series:
- -
- Package/Case:
- Axial
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 1 A
- Speed:
- Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 2 µs
- Current - Reverse Leakage @ Vr:
- 1 µA @ 200 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/286
- Mounting Type:
- Through Hole
- Supplier Device Package:
- Axial
- Operating Temperature - Junction:
- -
JANTX1N4245 FAQ
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5.How can I obtain technical support or documentation for JANTX1N4245?
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6.How does Aetrix verify that JANTX1N4245 is sourced from the original manufacturer or authorized distributors?
All JANTX1N4245 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4245 meets industry standards.
7.What is the process for return or replacement of JANTX1N4245?
All JANTX1N4245 units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4245, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N4245 part is unused and in its original packaging.
Return procedure for JANTX1N4245:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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