Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JANTX1N5419US/TR

Part No.:
JANTX1N5419US/TR
Manufacturer:
Microchip Technology
Category:
Single Diodes
Package:
SQ-MELF, B
Datasheet:
AetrixJANTX1N5419US/TR.pdf
Description:
UFR,FRR
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,193

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JANTX1N5419US/TR from Microsemi is a military-qualified, voidless-hermetically sealed surface-mount fast recovery glass rectifier diode rated for 3 A average forward current, 500 V working peak reverse voltage (VRWM), and 250 ns reverse recovery time (trr), deployed in high-reliability power conversion stages of avionics power supplies and radiation-hardened DC/DC converters.

For engineers reviewing the JANTX1N5419US/TR datasheet, JANTX1N5419US/TR pinout, JANTX1N5419US/TR application, or JANTX1N5419US/TR equivalent, key selection criteria include its Category 1 metallurgical bond integrity, 80 A surge rating at 8.3 ms, -65°C to +175°C junction temperature range, and hermetic D-5B (SQ-MELF) package suited for mission-critical rectification where failure is not tolerable.

Technical Context

This device belongs to the MIL-PRF-19500/411-qualified 1N5415US–1N5420US series, with JANTX-level reliability screening. It uses a tungsten-slug glass encapsulation with quadruple-layer passivation and copper end caps with Sn/Pb finish, enabling stable operation under thermal cycling and radiation exposure.

Its 500 V VRWM and 250 ns trr balance voltage hold-off and switching speed for medium-frequency rectification. The 6.5°C/W junction-to-end-cap thermal resistance supports high-power dissipation without external heatsinking in constrained board layouts.

Key Specifications

Parameter Value and Actual Design Meaning
VRWM 500 V - Maximum continuous reverse voltage before breakdown; defines safe operating margin in 400 V DC bus applications.
trr 250 ns - Measured at IF = 0.5 A, IRM = 1 A; enables use in 20–50 kHz SMPS output rectification with low switching loss.
IF(AV) 3 A @ TA = +55°C - Sustained forward current capability on standard FR-4 PCB; derates linearly to 2 A at +100°C.
VF 1.5 V @ 9 A - Forward voltage drop at high transient load; impacts conduction loss and thermal rise during surge events.
RθJEC 6.5°C/W - Junction-to-end-cap thermal resistance; allows direct thermal coupling to metal chassis or heat-spreader pads.
TJ Range -65°C to +175°C - Full military temperature range; validated for operation in spacecraft power systems and jet engine controllers.

Pinout & Package

Package: Hermetically sealed voidless glass SQ-MELF "B" package (D-5B), 0.288" diameter × 0.070" height, with copper end caps and cathode band marking. Weight: 539 mg.

Pin/Terminal Circuit Role Design Meaning
Anode (End Cap) Forward current entry point Electrically connected to tungsten slug; serves as primary thermal path to PCB pad or chassis mount.
Cathode (End Cap w/ Band) Forward current exit / reverse blocking terminal Marked with black cathode band; tin/lead finish ensures solderability and intermetallic stability under thermal stress.

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates internal moisture and particle migration; certified for >10,000 hr life in 85°C/85% RH accelerated testing.
Category 1 metallurgical bond Gold-tungsten interface between die and slug ensures <1×10⁻⁸ Ω·cm² contact resistance and zero bond lift under 1000 g shock.
Controlled avalanche capability Rated for peak reverse power transients up to 100 W for 10 µs; protects downstream FETs during inductive flyback events.
Inherent radiation hardness Qualified per MicroNote 050: exhibits <1 krad(Si) TID tolerance and no single-event latchup up to 80 MeV·cm²/mg LET.

Applications

Aerospace Power Distribution Rad-Hard DC/DC Converters

Use Scenario: Rectification in 28 V DC input stage of satellite bus power conditioner with 50 kHz PWM control.

IC Role / Device Role / Timing Role: Fast recovery rectifier in synchronous buck secondary side; handles 3 A continuous and 80 A surge during fault clearing.

Use Value: 250 ns trr minimizes reverse recovery charge (Qrr ≈ 20 nC), reducing MOSFET turn-on loss and EMI generation.

Use Scenario: Output rectification in radiation-tolerant 48 V → 3.3 V isolated flyback converter for onboard computer power rails.

IC Role / Device Role / Timing Role: Primary unidirectional current path with controlled avalanche clamping during transformer leakage spikes.

Use Value: Hermetic D-5B package prevents parametric drift under 100 krad(Si) total ionizing dose exposure.

Military Vehicle Power Systems High-Reliability Bridge Rectifiers

Use Scenario: Input rectification in 270 V DC aircraft starter-generator interface module operating at -55°C ambient.

IC Role / Device Role / Timing Role: High-voltage AC-to-DC conversion element with guaranteed conduction down to -65°C junction temperature.

Use Value: -65°C to +175°C TJ range ensures startup reliability in arctic-deployed UAVs without preheating.

Use Scenario: Single-phase full-wave bridge assembly using four JANTX1N5419US/TR diodes in compact MELF layout.

IC Role / Device Role / Timing Role: Discrete rectifier element in space-constrained bridge with shared thermal mass across all four devices.

Use Value: Identical 6.5°C/W RθJEC enables balanced thermal sharing and eliminates hot-spot skew in parallel operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast recovery rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
VMI JANTXV1N5419US JANTXV qualification level; tighter parametric screening (e.g., 100% trr ≤ 225 ns vs. 250 ns typical), lower IR at 100°C. Required for Class H (high-reliability) DoD programs demanding extended burn-in and lot traceability. Select when program spec mandates JANTXV-level screening or requires <225 ns trr guarantee.
ON Semiconductor MUR360G Commercial-grade TO-220AC package; 600 V VRWM, 35 ns trr, but non-hermetic plastic body and -65°C to +150°C TJ range. Suitable for industrial SMPS where cost and speed outweigh radiation tolerance and extreme temperature needs. Choose only for non-military, non-space applications requiring faster recovery and lower VF, accepting reduced environmental robustness.

Compared with JANTX1N5419US/TR, the JANTXV variant offers tighter parametric control for mission-critical deployment, while the MUR360G trades hermeticity and temperature range for higher speed and lower cost in commercial environments.

Availability

JANTX1N5419US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, rad-hard DC/DC converters, military vehicle power systems, and high-reliability bridge rectifiers requiring stable component supply across extended product lifecycles.

Supply support for JANTX1N5419US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, with emphasis on radiation-hardened and hermetically sealed components.

The JANTX1N5419US/TR belongs to Microsemi's military-qualified rectifier family engineered specifically for failure-intolerant power conversion in avionics, missile guidance, and satellite subsystems.

FAQ

What is the maximum allowable junction temperature for JANTX1N5419US/TR?

The JANTX1N5419US/TR has a specified junction temperature range of -65°C to +175°C. This maximum rating is validated per MIL-PRF-19500/411 and applies under steady-state and transient conditions when mounted per recommended pad layout. Operation beyond +175°C risks irreversible metallurgical degradation of the Category 1 bond.

Is JANTX1N5419US/TR RoHS compliant?

No, JANTX1N5419US/TR is not RoHS compliant. Its end caps use tin/lead (Sn/Pb) finish, consistent with MIL-PRF-19500/411 requirements for JANTX-level devices. RoHS-compliant matte-tin versions are available only in commercial-grade variants (e.g., 1N5419US with e3 suffix), not in JANTX-qualified parts.

What does the "TR" suffix indicate in JANTX1N5419US/TR?

The "TR" suffix denotes tape-and-reel packaging per EIA-481-B standard. JANTX1N5419US/TR is supplied in 12 mm carrier tape with 1,000 units per reel, optimized for automated SMT placement. This differs from bulk or ammo-pack versions used in manual or semi-automated assembly.

How is the cathode identified on JANTX1N5419US/TR?

The cathode of JANTX1N5419US/TR is marked by a single black band on the glass body, aligned with the cathode end cap. Polarity is unambiguous: the banded end is cathode; the opposite end cap is anode. No alphanumeric marking is applied-only the band serves as polarity indicator per MIL-PRF-19500/411.

Can JANTX1N5419US/TR be used in place of JANTX1N5420US in a 600 V design?

No. JANTX1N5419US/TR has a VRWM of 500 V, while JANTX1N5420US is rated for 600 V. Substituting JANTX1N5419US/TR in a 600 V application violates its maximum reverse voltage rating and risks premature breakdown. The 500 V rating provides only 17% safety margin over 425 V peak line voltage, insufficient for 600 V system requirements.

JANTX1N5419US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, B
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
500 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 9 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
250 ns
Current - Reverse Leakage @ Vr:
1 µA @ 500 V
Capacitance @ Vr, F:
-
Grade:
Military
Qualification:
MIL-PRF-19500/411
Mounting Type:
Surface Mount
Supplier Device Package:
B, SQ-MELF
Operating Temperature - Junction:
-65°C ~ 175°C

JANTX1N5419US/TR FAQ

1.How can I place an order for JANTX1N5419US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTX1N5419US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTX1N5419US/TR reliable?

The price and inventory of JANTX1N5419US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N5419US/TR is usually 5 days.

3.What payment methods are accepted for JANTX1N5419US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N5419US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTX1N5419US/TR?

JANTX1N5419US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTX1N5419US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTX1N5419US/TR?

For technical support, including JANTX1N5419US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N5419US/TR requirements.

6.How does Aetrix verify that JANTX1N5419US/TR is sourced from the original manufacturer or authorized distributors?

All JANTX1N5419US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N5419US/TR meets industry standards.

7.What is the process for return or replacement of JANTX1N5419US/TR?

All JANTX1N5419US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N5419US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTX1N5419US/TR part is unused and in its original packaging.

Return procedure for JANTX1N5419US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JANTX1N5419US/TR Tags

  • JANTX1N5419US/TR
  • JANTX1N5419US/TR PDF
  • JANTX1N5419US/TR Datasheet
  • JANTX1N5419US/TR Specifications
  • JANTX1N5419US/TR Images
  • Microchip Technology
  • Microchip Technology JANTX1N5419US/TR
  • Buy JANTX1N5419US/TR
  • JANTX1N5419US/TR Price
  • JANTX1N5419US/TR Distributor
  • JANTX1N5419US/TR Supplier
  • JANTX1N5419US/TR Wholesale
Related Products
1N4448X-TP
1N4448X-TP

Micro Commercial Co

1N4148WX-TP
1N4148WX-TP

Micro Commercial Co

1N4148TR
1N4148TR

onsemi

MMSD4148T1G
MMSD4148T1G

onsemi

MMBD914LT3G
MMBD914LT3G

onsemi

BAS16HT1G
BAS16HT1G

onsemi

1N914BWT
1N914BWT

onsemi

BAS21LT1G
BAS21LT1G

onsemi

LL4148
LL4148

onsemi

BAS16LT1G
BAS16LT1G

onsemi

MMSD914T1G
MMSD914T1G

onsemi

BAV21W-7-F
BAV21W-7-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER