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Microchip Technology JANTX1N5615US
- Part No.:
- JANTX1N5615US
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JANTX1N5615US.pdf
- Description:
- DIODE GEN PURP 200V 1A A SQ-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:7,427
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Product details
Overview
JANTX1N5615US from Microsemi is a military-qualified, hermetically sealed fast recovery glass rectifier diode rated for 1.0 A average forward current, 200 V working peak reverse voltage (VRWM), and 45 ns reverse recovery time (trr). It features voidless-glass construction with Category I metallurgical bonds, operates from –65 °C to +175 °C, and is used in high-reliability power conversion stages of aerospace avionics and radiation-hardened satellite power supplies.
For engineers reviewing the JANTX1N5615US datasheet, JANTX1N5615US pinout, JANTX1N5615US application, or JANTX1N5615US equivalent, key selection criteria include its MIL-PRF-19500/429 qualification, 30 A surge rating at 8.3 ms, 0.75 V max forward voltage at 3 A, hermetic glass package (D-5A), and controlled avalanche capability under transient reverse stress.
Technical Context
This device belongs to Microsemi's surface-mount fast recovery rectifier family qualified to MIL-PRF-19500/429 Class JANTX. Its voidless hermetic glass construction ensures zero internal delamination risk, while triple-layer passivation and Category I metallurgical bonding provide robust interfacial integrity under thermal cycling and mechanical shock.
The JANTX1N5615US delivers 45 ns reverse recovery time at IF = 0.5 A / IRM = 1 A / IR(REC) = 0.25 A, enabling efficient operation in 50–60 Hz line-frequency and moderate-frequency switching applications. Its 13 °C/W junction-to-end-cap thermal resistance supports stable operation up to 175 °C junction temperature without forced cooling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 200 V - Maximum continuous reverse voltage before breakdown across full operating temperature range (–65 °C to +175 °C) |
| VBR min @ 50 μA | 220 V - Minimum breakdown voltage guarantee, ensuring margin against transient overvoltage events |
| IO @ TA = 55 °C | 1.0 A - Average rectified output current with linear derating to 0.75 A at 100 °C |
| VF max @ 3 A | 0.75 V - Forward voltage drop limiting conduction loss in high-current half-wave or bridge configurations |
| trr max | 45 ns - Reverse recovery time measured under standardized IF = 0.5 A / IRM = 1 A conditions, critical for EMI control |
| IFSM @ 8.3 ms | 30 A - Non-repetitive surge current rating, supporting inrush and fault-current handling in unregulated supplies |
| IR max @ VRWM | 0.5 μA - Low leakage at rated reverse voltage, preserving efficiency in high-impedance bias networks |
Pinout & Package
Package: Hermetically sealed voidless hard glass (D-5A / Package "A"), with copper end caps finished in Sn/Pb, cathode band marking only, weight 193 mg. Dimensions: A = 6.25 mm, B = 1.70 mm, C = 2.67 mm, BD = 2.46–2.62 mm, BL = 4.70–5.08 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input AC or positive rail side in half-wave rectification; requires low-inductance layout to minimize switching overshoot |
| Cathode | Forward current exit point | Marked by visible band; ties to output filter capacitor or load return; serves as reference node for reverse-bias monitoring circuits |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture ingress and bond-line voids, ensuring >20-year reliability in vacuum and high-humidity environments |
| Category I metallurgical bond | Guarantees interfacial strength ≥125 MPa per MIL-STD-750 Method 2035, preventing delamination under thermal shock |
| Controlled avalanche capability | Withstands peak reverse power transients up to 500 W (150 V × 3.3 A) without degradation, enabling snubberless design |
| Triple-layer passivation | SiO₂/Si₃N₄/SiO₂ stack prevents surface ion migration and gate oxide charging in adjacent ICs on shared PCBs |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) ≥100 krad(Si), validated per MicroNote 050 for space-grade deployment |
Applications
| Aerospace Power Conditioning | Satellite DC-DC Converter Input Stage |
|---|---|
Use Scenario: Rectifying 400 Hz aircraft bus voltage in flight control actuator power supplies. IC Role / Device Role / Timing Role: Fast recovery rectifier in full-wave bridge configuration feeding regulated 28 V DC output. Use Value: 45 ns trr minimizes switching losses and EMI generation during 400 Hz commutation; hermetic seal prevents failure in cabin pressure-cycled environments. | Use Scenario: Input rectification for isolated 100 W DC-DC converter in LEO satellite payload power system. IC Role / Device Role / Timing Role: Primary-side rectifier handling 28 V ±10% input with transient suppression via controlled avalanche. Use Value: 220 V VBR provides 10% margin over 200 V VRWM, enabling reliable operation during solar array voltage spikes up to 240 V. |
| Military Radar Pulse Modulator | Nuclear Plant Instrumentation Supply |
Use Scenario: Catch diode in high-voltage pulse modulator charging circuit for magnetron drive. IC Role / Device Role / Timing Role: Freewheeling path for 10 kV/10 A pulse transformer secondary current during turn-off. Use Value: 30 A IFSM sustains repetitive 8.3 ms surges without parameter shift; 175 °C max junction temperature accommodates convection-only cooling. | Use Scenario: AC-to-DC front-end rectifier in safety-critical reactor coolant pump controller. IC Role / Device Role / Timing Role: Redundant bridge element in dual-channel 120 VAC input supply with fault isolation. Use Value: MIL-PRF-19500/429 JANTX qualification ensures traceable lot history and 100% screening per Level H, meeting IEEE 344 seismic survivability requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast recovery rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5615US | Higher screening level (JANTXV vs JANTX); tighter VBR (220–242 V vs 220 V min); same VRWM, trr, and package | Required for programs specifying MIL-PRF-19500/429 Class JANTXV; suitable where enhanced parametric consistency is mandated | Select JANTXV1N5615US when full burn-in, life test, and radiation lot acceptance testing are contractually required. |
| 1N5615US | Commercial-grade version; no MIL-PRF-19500/429 qualification; identical electrical specs and D-5A package | Applicable in non-military industrial systems where cost sensitivity outweighs long-term reliability assurance | Choose 1N5615US only for prototyping or commercial-grade subsystems not subject to DoD or NASA reliability mandates. |
Compared with JANTX1N5615US, JANTXV1N5615US adds rigorous screening for mission-critical timing stability and parameter uniformity, while 1N5615US omits military screening but retains identical performance-making both viable alternatives depending on program-level qualification requirements.
Availability
JANTX1N5615US is available at Aetrix Electronics and suitable for aerospace power conditioning, satellite DC-DC converter input stages, military radar pulse modulators, and nuclear plant instrumentation supplies requiring stable component supply across extended production lifecycles.
Supply support for JANTX1N5615US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and MIL-spec components.
The JANTX1N5615US belongs to Microsemi's surface-mount fast recovery rectifier product line, engineered specifically for high-reliability power conversion in environments demanding immunity to thermal shock, humidity, radiation, and mechanical vibration.
FAQ
What is the maximum junction temperature rating for JANTX1N5615US?
The JANTX1N5615US has a specified junction and storage temperature range of –65 °C to +175 °C. This wide operating envelope enables use in engine-mounted avionics and downhole oilfield tools where ambient temperatures exceed 125 °C. The 13 °C/W thermal resistance from junction to end cap allows direct mounting to thermally conductive chassis surfaces without additional heatsinking in most applications.
Does JANTX1N5615US have a cathode band marking?
Yes, JANTX1N5615US uses a single cathode band marking on the glass body to indicate polarity. This band aligns with industry-standard orientation for D-5A package devices and must be oriented toward the negative output node in bridge or half-wave rectifier layouts. No anode marking is present-only the cathode band is applied per Microsemi SD47A specification.
Is JANTX1N5615US compatible with lead-free reflow soldering?
No, JANTX1N5615US is not compatible with lead-free reflow processes. Its terminations use Sn/Pb finish, and the maximum solder temperature is specified as 260 °C for 10 seconds-below typical lead-free reflow peak temperatures (≥260 °C sustained). Use only with Sn63/Pb37 solder paste and conventional eutectic reflow profiles to avoid end-cap delamination or glass cracking.
What does "Category I metallurgical bond" mean for JANTX1N5615US?
"Category I metallurgical bond" refers to a high-strength, diffusion-bonded interface between the silicon die and tungsten slug, tested per MIL-STD-750 Method 2035 to ≥125 MPa shear strength. For JANTX1N5615US, this ensures mechanical integrity during thermal cycling from –65 °C to +175 °C and prevents interfacial failure under vibration or shock-critical for launch vehicle and missile guidance systems.
Can JANTX1N5615US be used in place of axial-leaded 1N5615 in existing designs?
JANTX1N5615US is not a direct replacement for axial-leaded 1N5615 due to different package geometry (D-5A surface mount vs DO-41 through-hole), thermal path, and mounting method. While electrical parameters match, PCB layout, thermal management, and mechanical retention differ significantly. Migration requires redesign of pad layout, reflow profile, and mechanical stress analysis per IPC-7351B.
JANTX1N5615US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Bulk
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 200 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 3 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 150 ns
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/429
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- A, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTX1N5615US FAQ
1.How can I place an order for JANTX1N5615US through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N5615US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N5615US reliable?
The price and inventory of JANTX1N5615US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N5615US is usually 5 days.
3.What payment methods are accepted for JANTX1N5615US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N5615US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N5615US?
JANTX1N5615US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N5615US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N5615US?
For technical support, including JANTX1N5615US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N5615US requirements.
6.How does Aetrix verify that JANTX1N5615US is sourced from the original manufacturer or authorized distributors?
All JANTX1N5615US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N5615US meets industry standards.
7.What is the process for return or replacement of JANTX1N5615US?
All JANTX1N5615US units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N5615US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N5615US part is unused and in its original packaging.
Return procedure for JANTX1N5615US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N5615US Tags
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