Microchip Technology JANTX1N5711UBCA/TR
- Part No.:
- JANTX1N5711UBCA/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JANTX1N5711UBCA/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 50V 33MA UB
- Quantity:
- Payment:

- Shipping:

Inventory:2,725
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Product details
Overview
JANTX1N5711UBCA/TR from Microsemi is a military-qualified ceramic surface-mount Schottky barrier diode with common-anode polarity, 70 V breakdown voltage, 1.0 V forward voltage at 15 mA, and 50 V working peak reverse voltage-used in high-reliability RF detector and sample-and-hold circuits.
For engineers reviewing the JANTX1N5711UBCA/TR datasheet, JANTX1N5711UBCA/TR pinout, JANTX1N5711UBCA/TR application, or JANTX1N5711UBCA/TR equivalent, key selection criteria include low reverse leakage (200 nA @ 50 V), fast switching (100 ps minority carrier lifetime), ceramic package thermal resistance (100 °C/W), and MIL-PRF-19500/444 JANTX-level qualification for aerospace and defense systems.
Technical Context
This device implements a unidirectional Schottky junction optimized for low-loss signal rectification in high-frequency analog front-ends. Its 100 ps effective minority carrier lifetime enables sub-nanosecond recovery, while the ceramic-encapsulated UB package ensures stable operation across -65 °C to +150 °C junction temperature range.
The common-anode (CA) configuration supports dual-diode functions in compact layouts, and gold-plated nickel terminals provide reliable solderability under MIL-STD-202 test conditions. Reverse leakage remains ≤200 nA at VR = 50 V, supporting precision DC restoration in low-power instrumentation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 70 V minimum at 10 µA - ensures safe operation up to 70 V transient spikes without avalanche conduction |
| Forward Voltage VF | 1.0 V max at IF = 15 mA - minimizes power loss and self-heating in low-current detection paths |
| Working Peak Reverse Voltage VRWM | 50 V - defines maximum continuous reverse bias in AC-coupled signal chains |
| Reverse Leakage IR | 200 nA max at VR = 50 V - preserves signal integrity in high-impedance sampling nodes |
| Junction Temp Range | -65 °C to +150 °C - supports deployment in extended-temperature avionics and space-grade electronics |
| Thermal Resistance RθJSP | 100 °C/W - enables direct thermal coupling to PCB copper for passive cooling in sealed enclosures |
| Minority Carrier Lifetime τ | 100 ps - guarantees fast turn-off for RF envelope detection above 100 MHz |
Pinout & Package
Ceramic surface-mount UB package (DO-213AA equivalent), 0.115" × 0.085" footprint, gold-plated nickel terminals, weight ≈ 0.04 g. Marking includes part number, date code, and manufacturer ID. Tape-and-reel per EIA-418D.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 (Base) | Anode 1 | Common anode connection for dual-diode CA configuration; electrically tied to second anode |
| Pad 2 (Emitter) | Cathode 1 | First cathode terminal; used for primary signal path in detector applications |
| Pad 3 (Collector) | Cathode 2 | Second cathode terminal; enables independent routing of two output signals |
| Pad 4 (Shield) | Case / Lid Ground | Metallized lid connected to shielding plane; reduces RF coupling between diodes |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JANTX qualification | Validated screening including burn-in, temperature cycling, and hermeticity testing for mission-critical use |
| Ceramic encapsulation | Provides hermetic seal and CTE match to alumina substrates, eliminating moisture-induced parameter drift |
| Low-profile surface mount | 0.056" max height enables integration into stacked RF modules and miniaturized guidance electronics |
| ESD sensitivity Class 1 | Requires handling per ANSI/ESD S20.20; prevents gate oxide damage during board assembly |
| RoHS-compliant by design | No lead, cadmium, or hexavalent chromium-meets DoD Directive 4140.01 and EU RoHS 2011/65/EU |
Applications
| Radar Pulse Detection | RF Signal Sampling |
|---|---|
Use Scenario: Detecting short-duration RF pulses in airborne fire-control radar receivers. IC Role / Device Role / Timing Role: Signal rectifier in logarithmic amplifier input stage, converting GHz-band RF envelopes to baseband DC. Use Value: 100 ps minority carrier lifetime ensures accurate pulse width capture without tailing; 200 nA leakage avoids baseline shift in high-gain amplifiers. | Use Scenario: Sampling RF amplitude in electronic warfare (EW) receiver channel calibration loops. IC Role / Device Role / Timing Role: Precision peak detector feeding ADC reference path in wideband tunable receivers. Use Value: 1.0 V VF at 15 mA maintains linearity over temperature; ceramic package stability prevents gain drift during thermal transients. |
| Avionics Power Sequencing | Satellite Telemetry Front-End |
Use Scenario: Isolating auxiliary power rails during cold-start sequencing in flight control computers. IC Role / Device Role / Timing Role: Reverse-polarity protection diode in dual-supply monitoring circuitry. Use Value: 70 V V(BR) withstands load-dump transients; JANTX qualification ensures no latent failure after 1000+ thermal cycles. | Use Scenario: Demodulating telemetry carrier signals in LEO satellite command receivers. IC Role / Device Role / Timing Role: Zero-bias detector in crystal-filtered IF stage prior to baseband decoding. Use Value: 50 V VRWM matches spacecraft bus voltage margins; -65 °C to +150 °C rating covers orbital thermal extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5711UB-TR | Same electrical specs and UB package; commercial-grade (no MIL qualification) | Lacks JANTX screening-unsuitable for flight hardware but acceptable for ground-test prototypes | Select when cost-sensitive development requires identical form/function without military screening |
| SM1N5711-CA | Surface-mount Schottky with CA polarity; 70 V V(BR), but rated only to +125 °C junction temp | Not qualified to MIL-PRF-19500; limited to industrial-grade avionics subsystems | Choose for non-flight-critical modules where extended temperature range is not required |
Compared with JANTX1N5711UBCA/TR, the 1N5711UB-TR offers identical performance at lower cost but no reliability screening, while SM1N5711-CA provides similar CA functionality with reduced thermal margin-making JANTX1N5711UBCA/TR the sole choice for full-spectrum aerospace deployment.
Availability
JANTX1N5711UBCA/TR is available at Aetrix Electronics and suitable for radar pulse detection, RF signal sampling, and avionics power sequencing requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for JANTX1N5711UBCA/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTX1N5711UBCA/TR belongs to Microsemi's legacy military diode product line, engineered specifically for RF detection and signal conditioning in harsh-environment systems where parameter stability and long-term reliability are non-negotiable.
FAQ
What is the maximum average rectified current for JANTX1N5711UBCA/TR?
The JANTX1N5711UBCA/TR has a maximum average rectified output current (IO) of 33 mA at 25 °C ambient. This derates linearly to zero at +150 °C junction temperature when the external case and solder pad temperatures reach +140 °C, per the datasheet's thermal derating curve. The 33 mA rating reflects its use in low-power RF detection-not power conversion.
Is JANTX1N5711UBCA/TR RoHS compliant?
Yes, JANTX1N5711UBCA/TR is RoHS compliant by design, containing no lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). Compliance is verified per EU Directive 2011/65/EU and aligns with DoD Directive 4140.01 for environmentally preferable procurement.
What does the "CA" suffix mean in JANTX1N5711UBCA/TR?
The "CA" in JANTX1N5711UBCA/TR stands for Common Anode-a dual-diode configuration where both anodes are internally connected and brought out to Pad 1. Cathodes are isolated on Pads 2 and 3, enabling independent signal paths sharing one anode node-ideal for balanced detector or dual-channel sampling circuits.
Can JANTX1N5711UBCA/TR replace standard 1N5711 in existing designs?
JANTX1N5711UBCA/TR is not a drop-in replacement for through-hole 1N5711-1 (DO-35) due to different package (UB vs DO-35), pinout, and thermal path. However, it matches the 1N5711's electrical specs and serves as the surface-mount, military-qualified equivalent-requiring PCB layout revision but no circuit redesign.
What is the reverse recovery time of JANTX1N5711UBCA/TR?
JANTX1N5711UBCA/TR does not specify trr in its datasheet because Schottky diodes are majority-carrier devices with no minority-carrier storage delay. Instead, its 100 ps effective minority carrier lifetime (τ) governs switching speed-enabling clean turn-off in RF detector applications up to several hundred MHz without reverse recovery overshoot.
JANTX1N5711UBCA/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 33mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JANTX1N5711UBCA/TR FAQ
1.How can I place an order for JANTX1N5711UBCA/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N5711UBCA/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that JANTX1N5711UBCA/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N5711UBCA/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N5711UBCA/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N5711UBCA/TR?
All JANTX1N5711UBCA/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N5711UBCA/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N5711UBCA/TR part is unused and in its original packaging.
Return procedure for JANTX1N5711UBCA/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N5711UBCA/TR Tags

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BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

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BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
onsemi

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BAT54CLT1G
onsemi

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BAT54S-7-F
Diodes Incorporated

-
BAV99LT1G
onsemi

-
BAT54S,215
Nexperia USA Inc.

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BAS40-04LT1G
onsemi

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MMBD1503-TP
Micro Commercial Co

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BAV99WT1G
onsemi
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