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Microchip Technology JANTX1N5711UBD/TR
- Part No.:
- JANTX1N5711UBD/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JANTX1N5711UBD/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 50V 33MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:5,193
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Product details
Overview
JANTX1N5711UBD/TR from Microsemi is a military-qualified ceramic surface-mount Schottky barrier diode with unidirectional polarity, 70 V breakdown voltage, 50 V working peak reverse voltage, and 33 mA average rectified output current - used in high-reliability RF detector, sample-and-hold, and low-leakage biasing circuits.
For engineers reviewing the JANTX1N5711UBD/TR datasheet, JANTX1N5711UBD/TR pinout, JANTX1N5711UBD/TR application, or JANTX1N5711UBD/TR equivalent, key selection criteria include its MIL-PRF-19500/444 JANTX qualification, 200 nA max reverse leakage at 50 V, 0.41 V forward voltage at 1 mA, ceramic hermetic package, and 100 °C/W junction-to-solder-pad thermal resistance.
Technical Context
This device implements a low-barrier Schottky junction optimized for fast switching and minimal stored charge, with 100 ps effective minority carrier lifetime enabling sub-nanosecond recovery behavior. Its ceramic surface-mount (UB) package provides hermetic sealing and stable electrical performance across -65 °C to +150 °C ambient operation.
The JANTX1N5711UBD/TR is rated for 50 V working peak reverse voltage and exhibits only 200 nA reverse leakage at that stress level - critical for precision analog front-ends where signal integrity depends on ultra-low IR. It supports pulsed forward currents up to 15 mA at 1.0 V VF while maintaining low dynamic resistance below 10 Ω.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 70 V - ensures safe operation under transient overvoltage events up to rated limit without avalanche conduction |
| Working Peak Reverse Voltage | 50 V - defines maximum continuous reverse-bias voltage in rectifier or clamp applications |
| Forward Voltage @ 1 mA | 0.41 V - enables low-loss signal detection and bias generation in low-power analog stages |
| Reverse Leakage @ 50 V | 200 nA - preserves accuracy in high-impedance sampling nodes and reference circuits |
| Average Rectified Current | 33 mA - supports continuous DC power conversion in compact, thermally constrained layouts |
| Junction-to-Solder Pad Rθ | 100 °C/W - determines thermal rise above PCB pad temperature under steady-state load |
| Operating Temperature Range | -65 °C to +150 °C - validated for aerospace, downhole, and defense systems requiring extreme environmental resilience |
Pinout & Package
Ceramic surface-mount UB package (DO-213AA equivalent), hermetically sealed with gold-plated nickel terminals; weight ≈ 0.04 g; marking includes part number, date code, and manufacturer ID.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to higher-potential node in rectifier, clamp, or detector configuration |
| Cathode | Forward current exit point / reverse-bias terminal | Reference node for biasing; reverse leakage flows into this terminal under VR stress |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JANTX qualification | Validated reliability for mission-critical systems including screening, lot traceability, and extended temperature operation |
| Low-profile ceramic hermetic package | Enables stable long-term parametric performance in humid, corrosive, or vacuum environments |
| 200 nA max reverse leakage at 50 V | Minimizes error current in precision sample-and-hold amplifiers and RF envelope detectors |
| 0.41 V forward voltage at 1 mA | Reduces forward conduction loss in low-voltage signal routing and battery-powered sensing nodes |
| 100 ps effective minority carrier lifetime | Supports high-frequency switching (>1 GHz small-signal operation) with negligible stored charge |
Applications
| Radar Receiver Front-End | Avionics Power Sequencing |
|---|---|
Use Scenario: RF envelope detection in X-band radar intermediate frequency stages where signal fidelity must be preserved across wide temperature ranges. IC Role / Device Role / Timing Role: Unidirectional Schottky detector diode converting RF amplitude to baseband DC voltage. Use Value: 200 nA reverse leakage prevents baseline drift during low-signal intervals; 0.41 V VF ensures accurate low-amplitude detection without threshold distortion. | Use Scenario: Controlled turn-on sequencing of multiple voltage rails in flight control computers using discrete diode-based OR-ing and hold-off networks. IC Role / Device Role / Timing Role: Low-leakage blocking diode isolating auxiliary power domains during cold-start conditions. Use Value: 70 V breakdown and JANTX qualification guarantee immunity to load-dump transients; ceramic package withstands thermal cycling in airborne enclosures. |
| Satellite Telemetry Bias Network | Downhole Sensor Signal Conditioning |
Use Scenario: Precision biasing of op-amp input stages in radiation-hardened telemetry amplifiers operating in geosynchronous orbit. IC Role / Device Role / Timing Role: Low-leakage clamping diode protecting high-impedance sensor inputs from ESD and overvoltage. Use Value: Hermetic ceramic construction prevents parameter shift under vacuum and total ionizing dose exposure; 100 °C/W Rθ allows direct mounting to thermal vias. | Use Scenario: Signal conditioning front-end for piezoresistive pressure sensors deployed in oil/gas wellbores exceeding 150 °C ambient. IC Role / Device Role / Timing Role: Temperature-stable detector diode in bridge excitation monitoring circuitry. Use Value: Validated operation to +150 °C junction temperature enables direct placement near sensor die; 2.0 pF capacitance avoids high-frequency roll-off in 10 kHz bandwidth paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5711US-TR | Commercial-grade (non-military) version; same electrical specs but no MIL-PRF-19500 screening or temperature range validation | Lacks JANTX-level reliability testing and extended temperature qualification - unsuitable for aerospace or defense deployments | Select only for cost-sensitive industrial prototypes where full MIL qualification is not required |
| JANTXV1N5711UBD/TR | Higher-screened JANTXV grade: includes burn-in, life test, and tighter parametric limits per MIL-PRF-19500/444 | Required for programs demanding zero-defect reliability in launch-critical subsystems | Choose when system-level FMEA mandates enhanced screening beyond JANTX baseline |
Compared with JANTX1N5711UBD/TR, the 1N5711US-TR offers identical electrical behavior at lower cost but no military qualification, while JANTXV1N5711UBD/TR adds burn-in and life testing for zero-defect assurance - making the JANTX grade the optimal balance of proven reliability and procurement efficiency for qualified defense platforms.
Availability
JANTX1N5711UBD/TR is available at Aetrix Electronics and suitable for radar receiver front-ends, avionics power sequencing, and satellite telemetry bias networks requiring stable component supply across extended product lifecycles.
Supply support for JANTX1N5711UBD/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTX1N5711UBD/TR belongs to Microsemi's legacy MIL-qualified Schottky diode family, engineered specifically for high-stability, low-leakage signal detection and power management in extreme-environment electronics.
FAQ
What is the maximum reverse voltage rating for JANTX1N5711UBD/TR?
The JANTX1N5711UBD/TR has a working peak reverse voltage (VRWM) of 50 V and a minimum breakdown voltage (V(BR)) of 70 V at 10 µA. These ratings are verified per MIL-PRF-19500/444 and define its safe operating range in clamping and rectification applications - with derating required above +140 °C ambient.
Is JANTX1N5711UBD/TR RoHS compliant?
Yes, JANTX1N5711UBD/TR is RoHS compliant by design per Microsemi documentation. Its ceramic package contains no leaded solder or restricted substances, meeting EU Directive 2011/65/EU requirements - confirmed in T4-LDS-0040-2 Rev. 1 (2013).
What does the "UB" suffix indicate in JANTX1N5711UBD/TR?
The "UB" suffix in JANTX1N5711UBD/TR denotes Microsemi's ceramic surface-mount package (equivalent to DO-213AA), featuring gold-plated nickel terminals and hermetic sealing. It distinguishes this variant from axial DO-35 versions like 1N5711-1 and plastic SMT variants such as 1N5711UR-1.
How does JANTX1N5711UBD/TR differ from JANTX1N5712UBD/TR?
JANTX1N5711UBD/TR and JANTX1N5712UBD/TR share the same UB package and forward voltage (0.41 V @ 1 mA), but differ in breakdown voltage (70 V vs. 20 V), VRWM (50 V vs. 16 V), and average current rating (33 mA vs. 75 mA). The JANTX1N5711UBD/TR is optimized for higher-voltage, lower-current detection roles.
What is the thermal resistance specification for JANTX1N5711UBD/TR?
JANTX1N5711UBD/TR has a junction-to-solder-pad thermal resistance (RθJSP) of 100 °C/W, measured under standard JEDEC test conditions. This value guides thermal design when mounting the ceramic UB package directly to copper pads on FR-4 or polyimide PCBs.
JANTX1N5711UBD/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 33mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JANTX1N5711UBD/TR FAQ
1.How can I place an order for JANTX1N5711UBD/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N5711UBD/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N5711UBD/TR reliable?
The price and inventory of JANTX1N5711UBD/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N5711UBD/TR is usually 5 days.
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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N5711UBD/TR transactions.
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JANTX1N5711UBD/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N5711UBD/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N5711UBD/TR?
For technical support, including JANTX1N5711UBD/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N5711UBD/TR requirements.
6.How does Aetrix verify that JANTX1N5711UBD/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N5711UBD/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N5711UBD/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N5711UBD/TR?
All JANTX1N5711UBD/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N5711UBD/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N5711UBD/TR part is unused and in its original packaging.
Return procedure for JANTX1N5711UBD/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N5711UBD/TR Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
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