Microchip Technology JANTX1N5712UBCA/TR
- Part No.:
- JANTX1N5712UBCA/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JANTX1N5712UBCA/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 16V 75MA UB
- Quantity:
- Payment:

- Shipping:

Inventory:5,076
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Product details
Overview
JANTX1N5712UBCA/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode with common-anode polarity, 20 V breakdown voltage, 1.0 V forward voltage at 35 mA, and 16 V working peak reverse voltage - used in high-reliability RF detector, sample-and-hold, and low-leakage clamping circuits.
For engineers reviewing the JANTX1N5712UBCA/TR datasheet, JANTX1N5712UBCA/TR pinout, JANTX1N5712UBCA/TR application, or JANTX1N5712UBCA/TR equivalent, key selection criteria include military-grade qualification (MIL-PRF-19500/444), ceramic package thermal resistance (100 °C/W), and low reverse leakage (150 nA @ 16 V) in harsh-environment analog signal conditioning.
Technical Context
This JANTX1N5712UBCA/TR is a dual-die common-anode Schottky diode housed in a hermetically sealed ceramic surface-mount package (UB), qualified to JANTX level per MIL-PRF-19500/444. It features a 100 ps minority carrier lifetime and gold-plated nickel terminals for stable interconnect performance across -65 °C to +150 °C.
The device operates with unidirectional conduction per die, supports pulsed forward currents up to 75 mA average rectified output, and exhibits low dynamic resistance (<1 Ω at 10 mA) critical for RF envelope detection and precision analog switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 20 V @ 10 µA - defines maximum non-destructive reverse bias before avalanche onset. |
| Forward Voltage VF | 1.0 V @ 35 mA - ensures low conduction loss in low-voltage signal routing paths. |
| Working Peak Reverse Voltage VRWM | 16 V - sets usable DC blocking range without significant leakage or degradation. |
| Reverse Leakage IR | 150 nA @ 16 V - enables high-impedance sampling and minimal signal distortion in detector stages. |
| Average Rectified Current IO | 75 mA - supports continuous operation in low-power analog front-end signal paths. |
| Junction Temp Range | -65 °C to +150 °C - certified for aerospace, downhole, and defense electronics deployment. |
| Thermal Resistance RθJSP | 100 °C/W - determines junction-to-pad temperature rise under steady-state power dissipation. |
Pinout & Package
Ceramic surface-mount UB package with two anode-connected die and shared cathode terminals; gold-plated nickel metallization; weight ≈ 0.04 g; compliant with EIA-418D tape-and-reel packaging.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 (Base) | Anode 1 | Primary anode connection for first Schottky junction; bonded to internal die anode. |
| Pad 2 (Emitter) | Anode 2 | Second anode terminal; forms common-anode configuration with Pad 1. |
| Pad 3 (Collector) | Cathode | Shared cathode node for both diodes; reference return path for bidirectional signal routing. |
| Pad 4 (Shielding) | Case / Lid Ground | Connected to metal lid; provides EMI shielding and mechanical grounding in RF-sensitive layouts. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JANTX qualification | Validated reliability for mission-critical systems including avionics and space-qualified payloads. |
| Common-anode dual-diode topology | Enables balanced signal routing, differential detection, or redundant clamping without external wiring. |
| 100 ps minority carrier lifetime | Supports >1 GHz small-signal switching and fast recovery in RF demodulation applications. |
| Ceramic hermetic seal | Prevents moisture ingress and parameter drift over 20+ year service life in humid or corrosive environments. |
| Gold-plated nickel terminations | Ensures solder joint integrity and wire-bond compatibility across reflow and manual assembly processes. |
Applications
| RF Detector Circuit | Low-Leakage Sample-and-Hold |
|---|---|
Use Scenario: Demodulating AM/FM signals in L-band radar receivers where signal fidelity and temperature stability are critical. IC Role / Device Role / Timing Role: JANTX1N5712UBCA/TR serves as the envelope detector diode in a passive peak-detecting front end. Use Value: Low 150 nA reverse leakage at 16 V prevents hold capacitor discharge drift, maintaining >12-bit effective resolution over -55 °C to +125 °C. |
Use Scenario: Capturing transient analog waveforms in flight data recorders during rapid acceleration events. IC Role / Device Role / Timing Role: JANTX1N5712UBCA/TR isolates the hold capacitor during acquisition phase using its low VF and fast trr. Use Value: 100 ps minority carrier lifetime minimizes droop-induced timing jitter, enabling sub-10 ns aperture uncertainty. |
| High-Temp Power Supply Clamp | Military-Grade Signal Clipping |
Use Scenario: Protecting ADC inputs in engine control units operating continuously at +130 °C ambient. IC Role / Device Role / Timing Role: JANTX1N5712UBCA/TR acts as a bidirectional clamp between supply rail and signal line using common-anode configuration. Use Value: Ceramic package and -65 °C to +150 °C rating sustain clamping function without parametric shift after 10,000 thermal cycles. |
Use Scenario: Limiting input swing in secure comms transceivers subject to ESD Class 1 handling per MIL-STD-883. IC Role / Device Role / Timing Role: JANTX1N5712UBCA/TR provides symmetrical clipping via dual-anode structure referenced to ground and VCC. Use Value: Gold-plated terminals and hermetic seal ensure consistent clamping threshold across 500,000 insertion cycles in field-deployable hardware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5712UBCC/TR | Common-cathode polarity instead of common-anode; identical electrical specs and package. | Requires PCB layout revision to accommodate reversed cathode/anode routing. | Select when circuit topology requires shared cathode node rather than shared anode. |
| JANTXV1N5712UBCA/TR | Higher reliability screening (JANTXV level); same electrical and mechanical specs. | Required for radiation-tolerant or extended-lifetime programs where burn-in and lot acceptance testing are mandated. | Choose when full JANTXV qualification per MIL-PRF-19500/444 is contractually required. |
Compared with JANTX1N5712UBCA/TR, the 1N5712UBCC/TR changes polarity but preserves all electrical performance, while JANTXV1N5712UBCA/TR adds process-level screening without altering pinout or function - making both viable alternatives depending on system-level qualification and board layout constraints.
Availability
JANTX1N5712UBCA/TR is available at Aetrix Electronics and suitable for RF detector circuits, high-temperature clamping networks, and low-leakage sample-and-hold systems requiring stable component supply across extended product lifecycles.
Supply support for JANTX1N5712UBCA/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal components for aerospace, defense, and industrial applications.
The JANTX1N5712UBCA/TR belongs to Microsemi's military-qualified Schottky diode family, engineered specifically for RF detection, precision clamping, and signal conditioning in extreme-temperature and radiation-prone environments.
FAQ
What is the polarity configuration of JANTX1N5712UBCA/TR?
JANTX1N5712UBCA/TR uses a common-anode (CA) configuration: two anode terminals (Pads 1 and 2) share one cathode terminal (Pad 3). This allows dual-diode operation with synchronized forward conduction from either anode to the common cathode - essential for balanced RF detection and differential clamping topologies.
Does JANTX1N5712UBCA/TR meet MIL-PRF-19500/444 requirements?
Yes, JANTX1N5712UBCA/TR is fully qualified to MIL-PRF-19500/444 at the JANTX reliability level, including environmental stress screening, lot acceptance testing, and hermeticity validation. Its qualification covers temperature cycling, thermal shock, and long-term storage per specification.
What is the maximum average forward current for JANTX1N5712UBCA/TR?
The maximum average rectified output current for JANTX1N5712UBCA/TR is 75 mA at TEC and TSP = +130 °C, derating linearly to zero at +150 °C. This rating assumes a 50/60 Hz sine-wave input with 180° conduction angle and proper thermal management via the solder pad.
Is JANTX1N5712UBCA/TR RoHS compliant?
Yes, JANTX1N5712UBCA/TR is RoHS compliant by design, meeting EU Directive 2011/65/EU requirements. Lead-free assembly compatibility is ensured through gold-plated nickel terminations and ceramic substrate construction - no exemptions required.
What package type does JANTX1N5712UBCA/TR use?
JANTX1N5712UBCA/TR uses the UB ceramic surface-mount package: hermetically sealed, with four metallized pads (Base, Emitter, Collector, Shielding), dimensions 0.115″ × 0.085″ × 0.046″, and EIA-418D tape-and-reel packaging standard.
JANTX1N5712UBCA/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io) (per Diode):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JANTX1N5712UBCA/TR FAQ
1.How can I place an order for JANTX1N5712UBCA/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N5712UBCA/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N5712UBCA/TR reliable?
The price and inventory of JANTX1N5712UBCA/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N5712UBCA/TR is usually 5 days.
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5.How can I obtain technical support or documentation for JANTX1N5712UBCA/TR?
For technical support, including JANTX1N5712UBCA/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N5712UBCA/TR requirements.
6.How does Aetrix verify that JANTX1N5712UBCA/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N5712UBCA/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N5712UBCA/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N5712UBCA/TR?
All JANTX1N5712UBCA/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N5712UBCA/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N5712UBCA/TR part is unused and in its original packaging.
Return procedure for JANTX1N5712UBCA/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N5712UBCA/TR Tags

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BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
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BAV99,215
Nexperia USA Inc.

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BAT54SLT1G
onsemi

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BAV70LT1G
onsemi

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BAT54CLT1G
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BAT54S-7-F
Diodes Incorporated

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BAV99LT1G
onsemi

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BAT54S,215
Nexperia USA Inc.

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BAS40-04LT1G
onsemi

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MMBD1503-TP
Micro Commercial Co

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BAV99WT1G
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