My Inquiry
My Account
Microchip Technology JANTX1N5807URS/TR
- Part No.:
- JANTX1N5807URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTX1N5807URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:9,448
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTX1N5807URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) MELF package, rated for 50 V working peak reverse voltage, 6.0 A average rectified current at 75 °C, and 30 ns reverse recovery time-used in high-reliability switching power supplies and radiation-hardened systems.
For engineers reviewing the JANTX1N5807URS/TR datasheet, JANTX1N5807URS/TR pinout, JANTX1N5807URS/TR application, or JANTX1N5807URS/TR equivalent, key selection criteria include MIL-PRF-19500/477 JANTX qualification, void-less hermetic glass construction, Category 1 metallurgical bond, and thermal resistance of 6.5 °C/W junction-to-end cap.
Technical Context
This device operates as a unidirectional silicon power rectifier with controlled avalanche capability and inherent radiation hardness per MicroNote 050. Its ultrafast 30 ns recovery time and low forward voltage (0.875 V @ 4 A) support high-frequency switching efficiency in hardened DC–DC converters.
The URS package features tungsten slugs and tin/lead terminations, enabling stable thermal performance under surge conditions (125 A IFSM) and operation across –65 °C to +175 °C junction temperature range, with cathode polarity marked by a blue band.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 50 V - Maximum sustainable reverse voltage without breakdown during normal operation |
| IO1 @ TL = 75 °C | 6.0 A - Continuous average forward current with 3/8″ lead length and end-cap temperature control |
| trr | 30 ns - Time to recover blocking capability after forward conduction, critical for >100 kHz SMPS |
| VFM @ 4 A | 0.875 V - Forward voltage drop determining conduction loss and thermal load at rated current |
| RθJEC | 6.5 °C/W - Junction-to-end-cap thermal resistance enabling direct heatsinking via end caps |
| IFSM | 125 A - Non-repetitive surge current handling for line transients and startup events |
| TJ/TSTG | –65 °C to +175 °C - Full military temperature range supporting space and avionics deployment |
Pinout & Package
Package: URS (one square + one round end cap) MELF-style hermetically sealed void-less glass case with tungsten slugs and tin/lead terminations; cathode indicated by blue band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (square end cap) | Forward current entry point | Electrically connected to P-type region; accepts input current during conduction phase |
| Cathode (round end cap, banded) | Forward current exit / reverse blocking terminal | Connected to N-type region; blocks reverse voltage up to 50 V VRWM and marks polarity |
Key Features
| Feature | Design Value |
|---|---|
| Void-less hermetic glass seal | Eliminates internal moisture and particle ingress, ensuring long-term reliability in vacuum and high-humidity environments |
| Category 1 metallurgical bond | Provides mechanical and thermal integrity between silicon die and tungsten slug under thermal cycling and shock |
| Quadruple-layer passivation | Enhances surface stability and reduces leakage current drift over lifetime and radiation exposure |
| Controlled avalanche capability | Allows safe clamping of inductive turn-off spikes up to specified peak reverse power without failure |
| Inherent radiation hardness | Validated per Microsemi MicroNote 050 for total ionizing dose (TID) tolerance in space applications |
Applications
| Avionics Power Conversion | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: DC–DC conversion in airborne radar cooling subsystems requiring uninterrupted operation under vibration and wide temperature swings. IC Role / Device Role / Timing Role: Ultrafast rectifier in secondary-side synchronous rectification stage of isolated flyback converter. Use Value: 30 ns trr enables >200 kHz switching with minimal reverse recovery loss; 6.5 °C/W RθJEC supports passive heatsinking on chassis-mounted end caps. | Use Scenario: High-current bias supply for T/R module driver stages in ground-based phased-array radar systems. IC Role / Device Role / Timing Role: Input rectifier in high-efficiency AC–DC front-end with fast transient response requirements. Use Value: 125 A IFSM withstands pulsed magnetron loads; JANTX qualification ensures traceable lot-level MIL-PRF-19500/477 compliance. |
| Spacecraft EPS Rectification | Nuclear Instrumentation Power |
Use Scenario: Solar array regulator output stage in LEO satellite power distribution units exposed to proton irradiation. IC Role / Device Role / Timing Role: Primary output rectifier in redundant DC–DC modules feeding battery charge controllers. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding or derating; –65 °C to +175 °C rating covers orbital thermal extremes. | Use Scenario: High-stability HV bias supply for scintillation detector photomultiplier tubes in nuclear monitoring equipment. IC Role / Device Role / Timing Role: Low-noise, low-leakage rectifier in precision linear regulated output stage. Use Value: <5 µA IR at VRWM ensures minimal dark current contribution; hermetic seal prevents outgassing-induced signal drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N5807US | Same die, US package (two square end caps); identical electrical specs but different mechanical mounting geometry | Requires PCB pad layout change due to dual-square footprint vs. URS asymmetric geometry | Select US for standard MELF-compatible layouts; choose URS when asymmetric thermal path or mechanical retention is needed |
| JANTXV1N5807URS/TR | Identical URS package and electrical specs, but qualified to higher JANTXV level per MIL-PRF-19500/477 with extended screening | Suitable for mission-critical flight hardware where burn-in, life test, and radiation lot acceptance are mandatory | Use JANTXV version when full JANTXV screening (including 100% thermal cycling and 1000-hour life test) is required by program spec |
Compared with JANTX1N5807US and JANTXV1N5807URS/TR, the JANTX1N5807URS/TR offers the same ultrafast 30 ns recovery and 50 V VRWM in a mechanically distinct URS form factor, balancing JANTX reliability with optimized thermal mounting-making it ideal for programs needing verified military qualification without full JANTXV cost or footprint constraints.
Availability
JANTX1N5807URS/TR is available at Aetrix Electronics and suitable for avionics power conversion, military radar transmitter supplies, and spacecraft EPS rectification requiring stable component supply across extended product lifecycles.
Supply support for JANTX1N5807URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTX1N5807URS/TR belongs to Microsemi's military-qualified ultrafast rectifier family, engineered specifically for high-reliability power conversion where failure is not an option-including space, avionics, and nuclear instrumentation.
FAQ
What does "URS" signify in JANTX1N5807URS/TR?
The "URS" suffix in JANTX1N5807URS/TR denotes the package configuration: one square end cap and one round end cap in a hermetically sealed void-less glass MELF-style body. This asymmetric geometry provides differentiated thermal and mechanical mounting characteristics versus the "US" (dual square) variant, and is explicitly defined in Microsemi's nomenclature guide for MIL-PRF-19500/477 qualified devices.
Is JANTX1N5807URS/TR RoHS compliant?
No, JANTX1N5807URS/TR is not RoHS compliant. Per Microsemi documentation, RoHS-compliant versions (e3 marking) are available only for commercial-grade variants-not for JANTX-level military-qualified parts like JANTX1N5807URS/TR, which retain tin/lead terminations to meet MIL-PRF-19500/477 solderability and reliability requirements.
What is the maximum junction temperature for JANTX1N5807URS/TR?
The maximum junction temperature for JANTX1N5807URS/TR is +175 °C, and the storage temperature range is identical (–65 °C to +175 °C). This rating is validated under MIL-PRF-19500/477 screening and applies across all JANTX qualification levels; derating curves for IO1 and IO2 are provided in the datasheet based on end-cap or ambient temperature limits.
How does the Category 1 metallurgical bond affect JANTX1N5807URS/TR reliability?
The Category 1 metallurgical bond in JANTX1N5807URS/TR ensures robust interfacial integrity between the silicon die and tungsten slug under thermal cycling, mechanical shock, and sustained high-current operation. This bond type is mandated for JANTX and higher reliability levels and directly contributes to the device's ability to maintain parameter stability and avoid delamination in mission-critical avionics and space applications.
Can JANTX1N5807URS/TR replace JANTX1N5807US in an existing design?
JANTX1N5807URS/TR cannot be used as a drop-in replacement for JANTX1N5807US without PCB layout modification. Although both share identical electrical specifications and JANTX qualification, the URS package (square + round end cap) requires different pad geometry than the US package (two square end caps), as confirmed by Microsemi's package dimension drawings and assembly guidelines.
JANTX1N5807URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 50 V
- Capacitance @ Vr, F:
- 60pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTX1N5807URS/TR FAQ
1.How can I place an order for JANTX1N5807URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N5807URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N5807URS/TR reliable?
The price and inventory of JANTX1N5807URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N5807URS/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N5807URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N5807URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N5807URS/TR?
JANTX1N5807URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N5807URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N5807URS/TR?
For technical support, including JANTX1N5807URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N5807URS/TR requirements.
6.How does Aetrix verify that JANTX1N5807URS/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N5807URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N5807URS/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N5807URS/TR?
All JANTX1N5807URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N5807URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N5807URS/TR part is unused and in its original packaging.
Return procedure for JANTX1N5807URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N5807URS/TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
