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Microchip Technology JANTX1N5809URS/TR
- Part No.:
- JANTX1N5809URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTX1N5809URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:5,853
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Product details
Overview
JANTX1N5809URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) MELF package, rated for 100 V working peak reverse voltage, 6.0 A average forward current at 75 °C case temperature, and 30 ns reverse recovery time. It serves as a high-reliability power conversion component in radiation-hardened and mission-critical DC/DC converters.
For engineers reviewing the JANTX1N5809URS/TR datasheet, JANTX1N5809URS/TR pinout, JANTX1N5809URS/TR application, or JANTX1N5809URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 JANTX qualification, void-less hermetic glass construction, Category 1 metallurgical bond, and 125 A surge current capability under standardized 8.3 ms pulse conditions.
Technical Context
This device belongs to Microsemi's ultrafast recovery rectifier family designed for high-reliability switching power supplies where low forward voltage drop and fast turn-off are critical. Its 30 ns trr and 0.875 V max VF at 4 A enable efficient operation in high-frequency converters without compromising thermal stability.
The URS package features a tungsten slug internal structure with tin/lead terminations, enabling direct solder mounting on FR4 PCBs with controlled thermal impedance. Its 6.5 °C/W junction-to-end-cap thermal resistance supports sustained 6.0 A conduction when properly heatsinked at TL = 75 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 100 V - Maximum continuous reverse voltage before breakdown; defines safe operating range in DC bus clamping or output rectification. |
| IO1 @ TL=75°C | 6.0 A - Sustained average forward current with 3/8″ lead length; sets baseline conduction capability in regulated power supplies. |
| trr | 30 ns - Time to recover from forward to reverse blocking state; enables >1 MHz switching frequencies with minimal switching loss. |
| VF @ 4 A | 0.875 V max - Forward voltage drop at rated pulse current; directly impacts conduction loss and thermal design margin. |
| IFSM | 125 A - Non-repetitive surge current rating; supports inrush current handling during cold-start or fault transients. |
| RθJEC | 6.5 °C/W - Junction-to-end-cap thermal resistance; determines required heatsinking for thermal management at full load. |
| CJ @ 10 V | 60 pF - Junction capacitance at 10 V reverse bias; influences high-frequency noise coupling and snubber design. |
Pinout & Package
Package: URS (one square end cap + one round end cap) void-less hermetically sealed glass MELF package with tungsten slugs and Sn/Pb terminations; cathode indicated by blue band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input/source side of rectifier; must withstand 125 A surge and 100 V reverse stress. |
| Cathode | Forward current exit point | Marked with blue band; connects to output/load side; carries full 6.0 A average current and defines reverse blocking path. |
Key Features
| Feature | Design Value |
|---|---|
| Void-less hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year operational life in vacuum or humid environments. |
| Category 1 metallurgical bond | Ensures mechanical integrity and thermal continuity between silicon die and tungsten slug under thermal cycling and shock. |
| Quadruple-layer passivation | Provides robust surface protection against ion migration and surface leakage in high-humidity or high-bias stress conditions. |
| MIL-PRF-19500/477 JANTX qualification | Validated screening includes burn-in, temperature cycling, and lot acceptance testing per military reliability standards. |
| Controlled avalanche capability | Enables safe energy absorption during transient overvoltage events without catastrophic failure. |
Applications
| Spacecraft Power Distribution | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: Rectifying 28 V DC bus outputs in satellite power management units exposed to total ionizing dose >100 krad(Si). IC Role / Device Role / Timing Role: Output rectifier in isolated DC/DC converter stage delivering regulated 5 V/3.3 V to avionics processors. Use Value: Radiation hardness and 175 °C max junction temperature ensure uninterrupted operation across orbital thermal cycles. | Use Scenario: High-current output rectification in pulsed radar modulator power supplies operating at 1–5 kHz repetition rates. IC Role / Device Role / Timing Role: Main secondary-side rectifier handling 6 A average and 125 A surge pulses synchronized to magnetron firing. Use Value: 30 ns trr minimizes reverse recovery loss during rapid polarity reversal, improving system efficiency by ≥2.1% vs standard fast recovery diodes. |
| Aerospace Actuator Control Units | Nuclear Instrumentation Front-Ends |
Use Scenario: Bridge rectification in servo motor drive inverters mounted in jet engine nacelles with ambient temperatures up to 125 °C. IC Role / Device Role / Timing Role: Input-stage AC-to-DC conversion feeding H-bridge gate drivers and current sense amplifiers. Use Value: Low RθJEC (6.5 °C/W) and 125 A IFSM allow compact thermal design while surviving engine vibration and thermal shock. | Use Scenario: Signal conditioning front-end rectification in gamma spectroscopy detectors requiring ultra-low leakage and stable long-term calibration. IC Role / Device Role / Timing Role: Precision reference voltage clamp and signal path protection diode in charge-integration circuits. Use Value: <5 µA IR at VRWM ensures sub-ppm baseline drift over 10-year field deployment in shielded enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VMI JANTXV1N5809URS | JANTXV qualification level; tighter parametric screening, extended temperature validation to 175 °C, lower typical trr (25 ns). | Suitable for space-grade systems requiring enhanced radiation tolerance and extended lifetime validation. | Select when mission-critical redundancy or TID >300 krad(Si) compliance is mandated. |
| ON Semiconductor MUR1620CTG | TO-220AB dual common-cathode package; 200 V VRWM; 16 A IO; 35 ns trr; commercial grade only. | Used in industrial SMPS where higher voltage margin and dual-diode integration reduce board area. | Choose for cost-sensitive terrestrial applications needing higher current but no military qualification. |
Compared with JANTX1N5809URS/TR, the JANTXV variant offers superior screening rigor and tighter timing specs for space use, while the MUR1620CTG provides higher current and voltage headroom in non-qualified industrial designs-neither is pin-compatible due to differing MELF vs TO-220 form factors.
Availability
JANTX1N5809URS/TR is available at Aetrix Electronics and suitable for spacecraft power distribution, military radar transmitter supplies, and aerospace actuator control units requiring stable component supply across extended product lifecycles.
Supply support for JANTX1N5809URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, discrete devices, and RF solutions for defense, aerospace, and industrial markets.
The JANTX1N5809URS/TR belongs to Microsemi's military-qualified ultrafast rectifier product line, engineered specifically for mission-critical power conversion where failure is not an option-including launch vehicles, satellites, and nuclear instrumentation.
FAQ
What is the maximum junction temperature rating for JANTX1N5809URS/TR?
JANTX1N5809URS/TR has a maximum junction temperature rating of +175 °C, validated per MIL-PRF-19500/477 screening. This allows operation in extreme environments such as jet engine bays or geosynchronous orbit thermal vacuums. Derating begins above 75 °C case temperature at 60 mA/°C for sustained 6.0 A conduction. The JANTX1N5809URS/TR's tungsten slug construction and hermetic seal maintain parameter stability across this full range.
Is JANTX1N5809URS/TR RoHS compliant?
No, JANTX1N5809URS/TR is not RoHS compliant. It uses traditional tin/lead (Sn/Pb) terminations required for military reliability and solder joint integrity under thermal cycling. RoHS-compliant versions (e3 suffix) are available only in commercial-grade variants (e.g., 1N5809URS-e3), not in JANTX-level qualified parts. The JANTX1N5809URS/TR remains exempt under RoHS Annex III for aerospace and defense applications requiring legacy Pb-based finishes.
How does the URS package differ from US and axial-leaded variants of JANTX1N5809?
The URS package of JANTX1N5809URS/TR features one square and one round end cap, optimized for surface-mount reflow on FR4 PCBs with defined pad layouts. In contrast, the US variant has two square end caps, and axial-leaded versions use wire leads for through-hole mounting. All share identical electrical specs, but URS enables automated placement and improved thermal transfer via end-cap soldering-critical for JANTX1N5809URS/TR's 6.0 A conduction in compact power modules.
What is the reverse recovery time test condition for JANTX1N5809URS/TR?
JANTX1N5809URS/TR reverse recovery time (trr) is measured at IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A, and di/dt ≥ 100 A/µs, per MIL-PRF-19500/477. This standardized condition ensures consistent comparison across military diodes. The specified 30 ns trr reflects performance under realistic switching transients-not idealized lab conditions-making it directly applicable to JANTX1N5809URS/TR design-in for 1–2 MHz DC/DC converters.
Can JANTX1N5809URS/TR be used in avalanche mode?
Yes, JANTX1N5809URS/TR is characterized for controlled avalanche operation with specified peak reverse power capability. Its internal structure and quadruple-layer passivation allow safe, repeatable energy absorption during transient overvoltage events-such as inductive kickback in motor drives-without degradation. This behavior is documented in Microsemi MicroNote 050 and verified in JANTX-level environmental stress screening, distinguishing JANTX1N5809URS/TR from commercial-only avalanche-rated diodes.
JANTX1N5809URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 100 V
- Capacitance @ Vr, F:
- 60pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTX1N5809URS/TR FAQ
1.How can I place an order for JANTX1N5809URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N5809URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N5809URS/TR reliable?
The price and inventory of JANTX1N5809URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N5809URS/TR is usually 5 days.
3.What payment methods are accepted for JANTX1N5809URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N5809URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTX1N5809URS/TR?
JANTX1N5809URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N5809URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N5809URS/TR?
For technical support, including JANTX1N5809URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N5809URS/TR requirements.
6.How does Aetrix verify that JANTX1N5809URS/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N5809URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N5809URS/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N5809URS/TR?
All JANTX1N5809URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N5809URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N5809URS/TR part is unused and in its original packaging.
Return procedure for JANTX1N5809URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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