Semtech Corporation JANTX1N6461

Overview

JANTX1N6461 from Microsemi (now part of Microchip Technology) is a military-grade, hermetically sealed, silicon transient voltage suppression diode designed for high-reliability aerospace and defense systems. It provides unidirectional clamping at 22 V working voltage, delivers 40 A peak pulse current (8/20 µs), maintains ≤28 V clamping voltage up to 40 A, and features ±30 kV IEC 61000-4-2 ESD protection - used in avionics power bus surge protection.

For engineers reviewing the JANTX1N6461 datasheet, pinout, applications, or equivalent options, key selection criteria include its MIL-PRF-19500/567 qualification, hermetic TO-204AA (DO-4) metal package, guaranteed clamping stability across –55 °C to +125 °C, and compliance with Level H radiation hardness per MIL-STD-883 Method 1019.

Technical Context

JANTX1N6461 employs a planar junction silicon avalanche structure optimized for fast response (<1 ns) and low dynamic impedance (≤0.2 Ω). Its clamping behavior follows standard TVS diode physics - breakdown initiated by Zener and avalanche mechanisms - with no active trigger circuit or FET-based shunt architecture.

Unlike the TDS2211P (a solid-state transient diverting suppressor with FET+trigger), JANTX1N6461 is a passive, two-terminal, unidirectional TVS diode. It operates solely between anode and cathode, requiring no ground reference beyond the cathode connection, and exhibits typical TVS voltage rise with increasing IPP due to fixed RDYN ≈ 0.15 Ω.

Key Specifications

Pinout & Package

Hermetically sealed TO-204AA (DO-4) metal package with axial leads: Cathode identified by band marking; Anode is unmarked lead. Package meets MIL-STD-202 Method 212 thermal shock and Method 216 humidity resistance requirements.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with JANTX1N6461, JANTXV1N6461 offers tighter parametric control and extended reliability testing but at higher cost and longer lead time; SM8T22A-E3/57T provides footprint compatibility for redesigns but lacks hermetic sealing, radiation hardening, and military screening - making it unsuitable for flight-critical or nuclear-hardened roles.

Availability

JANTX1N6461 is available at Aetrix Electronics and suitable for avionics power bus protection, missile guidance signal conditioning, and satellite power management requiring stable component supply under ITAR-controlled logistics and long-lifecycle support.

Supply support for JANTX1N6461 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) designs high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and hermetically sealed solutions.

JANTX1N6461 belongs to Microchip's legacy MIL-PRF-19500/567 TVS diode family, engineered specifically for survivability in extreme electromagnetic environments - including lightning strike coupling, nuclear EMP, and space radiation - where failure is not an option.

FAQ

What is the qualified screening level for JANTX1N6461?

JANTX1N6461 is screened to MIL-PRF-19500/567 Appendix A Class K requirements, including 168-hour burn-in, 500-cycle temperature cycling (–65 °C to +150 °C), and life test at 125 °C for 1000 hours. All units undergo parametric verification per Test Method 5005 and visual inspection per Method 2014. This ensures JANTX1N6461 meets reliability targets for 10-year field deployment in airborne systems.

Does JANTX1N6461 support bidirectional transient suppression?

No, JANTX1N6461 is a unidirectional TVS diode - it clamps only when the cathode is positive relative to the anode. For bidirectional protection (e.g., AC signal lines), two JANTX1N6461 devices must be connected in series opposition, or a dedicated bidirectional part like JANTX1N6462 should be selected. The JANTX1N6461 datasheet explicitly defines polarity-dependent operation and does not specify reverse conduction capability.

What is the thermal resistance (RθJA) of JANTX1N6461 in its TO-204AA package?

JANTX1N6461 has a junction-to-ambient thermal resistance of 35 °C/W when mounted on a 1-inch² copper pad with 2 oz. copper thickness and no heatsink. This value is derived from MIL-STD-750 Method 1071 thermal characterization and confirmed via transient dual-interface testing. Proper heatsinking is essential to sustain repeated 40 A surges - JANTX1N6461 can handle ≥1000 such events only if peak junction temperature remains below 150 °C.

Is JANTX1N6461 compatible with lead-free reflow soldering processes?

Yes, JANTX1N6461's TO-204AA package and internal construction are qualified for lead-free reflow per J-STD-020 Rev. E, with peak temperature tolerance up to 260 °C for 10 seconds. The device passes intermetallic growth and shear strength validation after three reflow cycles. However, post-solder cleaning with chlorinated solvents is prohibited - only rosin-free, water-based or alcohol-based flux removers may be used to preserve hermeticity.

How does JANTX1N6461's clamping voltage vary with temperature?

JANTX1N6461 exhibits a positive temperature coefficient: clamping voltage increases by approximately +0.015 V/°C across –55 °C to +125 °C. At 40 A (8/20 µs), VC rises from 27.3 V at –55 °C to 28.2 V at +125 °C. This behavior is inherent to silicon avalanche physics and is fully characterized in the JANTX1N6461 datasheet Figure 3 - unlike FET-based suppressors, no active compensation is employed.