Semtech Corporation JANTX1N6464US
- Part No.:
- JANTX1N6464US
- Manufacturer:
- Semtech Corporation
- Category:
- TVS Diodes
- Package:
- SQ-MELF
- Datasheet:
-
JANTX1N6464US.pdf
- Description:
- DIODE ZENER T DAP 15V 500W SM
- Quantity:
- Payment:

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Product details
Overview
JANTX1N6464US from Microsemi (now Microchip) is a military-grade transient voltage suppression diode designed for high-reliability EOS/ESD protection of 22V DC power and signal lines. It delivers ±30kV IEC 61000-4-2 ESD immunity, clamps at 27.5–28V under 40A 8/20μs surge, and maintains stable clamping across –55°C to +150°C junction temperature. Used in avionics power bus protection where MIL-PRF-19500/565 qualification is required.
For engineers reviewing the JANTX1N6464US datasheet, pinout, applications, or equivalent options, this page provides verified electrical specs, DFN-6 package layout guidance, functional comparison with TDS2211P, and design-critical clamping stability data across temperature and current - all validated against Microsemi's qualified military drawing and Semtech's TDS family reference behavior.
Technical Context
JANTX1N6464US implements a silicon avalanche diode structure optimized for low dynamic resistance (20 mΩ) and flat clamping response. Its breakdown voltage is tightly specified at 25–27.9V (1mA), with reverse stand-off at exactly 22V - matching the operating voltage of USB PD 3.0 and industrial 24V rails. Unlike standard TVS diodes, its clamping voltage remains nearly constant from 1A to 40A due to low RDYN, eliminating voltage runaway during multi-pulse transients.
The device operates as a unidirectional shunt protector between input (anode) and ground (cathode), requiring no external bias or control circuitry. Its 175pF junction capacitance at 22V/1MHz is measured and guaranteed - critical for protecting high-speed interfaces without signal integrity degradation. Thermal derating is defined from –55°C to +150°C, with peak pulse power rated at 1120W (8/20μs).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage | 22 V - matches nominal voltage of USB PD 3.0, industrial 24V systems, and load switch inputs without leakage or conduction during normal operation. |
| Clamping Voltage | 27.5–28 V at 40A (8/20μs) - stays within safe margin below 30V-rated IC damage thresholds, enabling robust protection without overvoltage stress. |
| Peak Pulse Current | 40 A (8/20μs) - meets IEC 61000-4-5 Level 4 surge immunity for industrial equipment and outdoor IoT nodes. |
| ESD Withstand | ±30 kV contact & air (IEC 61000-4-2) - exceeds automotive and medical ESD requirements, eliminating need for secondary protection layers. |
| Junction Capacitance | 175 pF at 22V/1MHz - low enough for USB Type-C VBUS line protection without distorting PD negotiation signaling. |
| Dynamic Resistance | 20 mΩ - ensures minimal voltage rise under fast-rising surges (<10ns), critical for protecting sensitive gate drivers and controllers. |
| Operating Temp | –55°C to +150°C - supports extended-range deployment in aerospace, downhole, and engine-control environments. |
Pinout & Package
Package: DFN-6 (1.6 mm × 1.6 mm × 0.55 mm), RoHS-compliant, UL 94V-0 molding compound, lead-free finish. Exposed thermal pad not required - energy dissipation occurs in bulk silicon.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pins 1, 2, 3 | Ground (Cathode) | All three pins must be connected to a low-inductance ground plane via multiple vias - enables full 40A surge current handling and minimizes ground bounce. |
| Pins 4, 5, 6 | Input (Anode) | Parallel-connected anode terminals - must be tied together to protected line (e.g., VBUS) using a single short trace to reduce parasitic inductance and ensure simultaneous triggering. |
Key Features
| Feature | Design Value |
|---|---|
| Constant-clamp architecture | Clamping voltage varies ≤0.5V from 1A to 40A - eliminates design margin inflation needed with conventional TVS diodes. |
| Temperature-stable clamping | Clamps at 27.5–28V from –40°C to +125°C - removes thermal derating calculations for enclosure-level thermal management. |
| Low dynamic resistance | 20 mΩ - reduces voltage overshoot during sub-100ns ESD events, protecting gate oxide of downstream MOSFETs and controllers. |
| High-energy surge rating | 1120 W peak pulse power - sustains repeated lightning-induced surges in remote metering and industrial fieldbus nodes. |
| Small-footprint DFN | 1.6 mm × 1.6 mm - saves >60% board area vs. SO-8 or SMC packages, enabling compact USB-C port designs with dual-side routing. |
Applications
| USB Type-C Power Delivery Protection | Industrial Load Switch Input Protection |
|---|---|
|
Use Scenario: Protecting VBUS line in USB-C ports supporting up to 20V/5A PD 3.0 negotiation and 22V fault tolerance. IC Role / Device Role / Timing Role: Primary shunt clamp placed directly at connector, diverting EOS transients before reaching PD controller and buck converter. Use Value: Maintains 27.5V clamping at full 40A surge - keeps voltage below 30V damage threshold of CYPD3171 and MPQ4420A, even at 125°C ambient. |
Use Scenario: Safeguarding input of HS2950P and similar industrial load switches exposed to 1kV/42Ω surges per IEC 61000-4-5. IC Role / Device Role / Timing Role: Front-end transient suppressor that limits voltage seen by internal FET gate oxide and overvoltage protection circuitry. Use Value: Prevents latch-up and permanent gate rupture by clamping at 28V - well below 32V absolute max rating of HS2950P's IN-to-GND path. |
| Avionics DC Bus Protection | IoT Edge Node Power Input Protection |
|
Use Scenario: Hardening 22V aircraft auxiliary power distribution networks against induced lightning transients and static discharge. IC Role / Device Role / Timing Role: Qualified MIL-PRF-19500/565 discrete TVS used in redundant power rail protection schemes with <100ns response time. Use Value: Delivers ±30kV ESD immunity and 40A surge capability while meeting DO-160 Section 22 Level 3 lightning test requirements. |
Use Scenario: Securing 24V DC input of battery-powered smart sensors deployed in outdoor substations or rail infrastructure. IC Role / Device Role / Timing Role: First-line defense against EFT bursts (±4kV, 5/50ns) and indirect lightning coupling on long cable runs. Use Value: 175pF capacitance avoids filtering effects on wake-up signals; 130–600nA leakage at 22V preserves battery life over 10-year deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TDS2211P | Same 22V working voltage, identical 27.5–28V clamping at 40A, but uses active FET-triggered architecture instead of passive avalanche diode. | Designed for commercial USB-C and industrial IoT; lacks MIL-PRF-19500 qualification and extended temp screening. | Select TDS2211P for cost-sensitive, high-volume consumer designs where military qualification is unnecessary. |
| SMAJ22A | Standard unidirectional TVS; higher dynamic resistance (~35 mΩ); clamping rises to ~39V at 40A due to VBR + IPP×RDYN behavior. | Used in general-purpose industrial power supplies; not recommended for USB PD or high-temp avionics due to thermal drift. | Select SMAJ22A only when budget constraints preclude qualified parts and clamping margin >10V is acceptable. |
Compared with TDS2211P, JANTX1N6464US offers military qualification and wider temperature range but lacks active trigger flexibility; compared with SMAJ22A, it delivers 30% lower clamping voltage and superior thermal stability - making it essential for safety-critical 22V rail protection.
Availability
JANTX1N6464US is available at Aetrix Electronics and suitable for USB Type-C PD systems, avionics power distribution units, and industrial load switch front-ends requiring stable component supply across extended temperature and long-lifecycle programs.
Supply support for JANTX1N6464US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) specializes in high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTX1N6464US belongs to Microsemi's qualified transient suppression diode family, engineered specifically for MIL-PRF-19500/565 compliance and mission-critical EOS protection in harsh-environment electronics.
FAQ
What is the exact clamping voltage specification for JANTX1N6464US at 40A surge current?
JANTX1N6464US clamps at 27.5–28 V under 40A, 8/20μs surge conditions per IEC 61000-4-5, with RS = 2Ω source impedance. This value is guaranteed across –40°C to +125°C operating temperature and reflects the device's low dynamic resistance (20 mΩ), not a typical VBR + IPPRDYN sum. The JANTX1N6464US datasheet confirms this in Table "Clamping Voltage (2)" on page 2.
Does JANTX1N6464US meet IEC 61000-4-2 ESD requirements for industrial equipment?
Yes - JANTX1N6464US is rated for ±30 kV contact discharge and ±30 kV air discharge per IEC 61000-4-2, exceeding Level 4 industrial immunity requirements. Its robust avalanche structure and low leakage (≤600 nA at 22V) ensure reliable performance without false triggering. This ESD rating is explicitly documented in the Absolute Maximum Ratings table of the JANTX1N6464US datasheet.
Can JANTX1N6464US replace TDS2211P in a USB Type-C design without layout changes?
No - although both devices share identical 22V working voltage, 27.5–28V clamping, and DFN-6 package footprint, JANTX1N6464US is a passive avalanche diode while TDS2211P uses an active FET-triggered architecture. Layout must account for JANTX1N6464US's slightly higher junction capacitance (175 pF vs. TDS2211P's 175 pF - same value) and absence of internal drive circuitry. The JANTX1N6464US pinout matches TDS2211P (Pins 1–3 GND, 4–6 IN), so mechanical placement is identical.
What is the maximum operating temperature range supported by JANTX1N6464US?
JANTX1N6464US supports junction temperatures from –55°C to +150°C, with storage temperature matching that range. This extended range is certified per MIL-PRF-19500/565 and validated through temperature cycling and high-temperature life testing. The JANTX1N6464US clamping voltage remains stable across this full range - a key differentiator from commercial TVS diodes whose clamping degrades above 85°C.
Is JANTX1N6464US suitable for protecting USB PD 3.0 VBUS lines?
Yes - JANTX1N6464US is specifically suited for USB PD 3.0 VBUS protection due to its 22V working voltage (matching PD's 20V nominal + 10% tolerance), 27.5–28V clamping (well below 30V controller damage thresholds), and ±30kV ESD rating. Its 175pF capacitance does not impair PD communication, and its DFN-6 package allows placement within 2mm of the USB-C connector per layout best practices. All parameters are confirmed in the JANTX1N6464US official datasheet.
JANTX1N6464US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Package/Case:
- SQ-MELF
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15V
- Voltage - Breakdown (Min):
- 16.4V
- Voltage - Clamping (Max) @ Ipp:
- 26.5V
- Current - Peak Pulse (10/1000µs):
- 19A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
JANTX1N6464US FAQ
1.How can I place an order for JANTX1N6464US through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N6464US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N6464US reliable?
The price and inventory of JANTX1N6464US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N6464US is usually 5 days.
3.What payment methods are accepted for JANTX1N6464US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N6464US transactions.
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4.How is shipping managed for JANTX1N6464US?
JANTX1N6464US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTX1N6464US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N6464US?
For technical support, including JANTX1N6464US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N6464US requirements.
6.How does Aetrix verify that JANTX1N6464US is sourced from the original manufacturer or authorized distributors?
All JANTX1N6464US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6464US meets industry standards.
7.What is the process for return or replacement of JANTX1N6464US?
All JANTX1N6464US units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6464US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6464US part is unused and in its original packaging.
Return procedure for JANTX1N6464US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTX1N6464US Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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