Microchip Technology JANTX1N6641US/TR
- Part No.:
- JANTX1N6641US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, D
- Datasheet:
-
JANTX1N6641US/TR.pdf
- Description:
- SIGNAL OR COMPUTER DIODE
- Quantity:
- Payment:

- Shipping:

Inventory:2,550
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Product details
Overview
JANTX1N6641US/TR from Microsemi is a hermetically sealed, metallurgically bonded, axial-lead switching diode in a D-5D glass package, rated for 75 V reverse working voltage (VRWM), 5.0 ns reverse recovery time (trr), and 200 mA forward current (IF), used in high-reliability military timing, pulse shaping, and clamping circuits.
For engineers reviewing the JANTX1N6641US/TR datasheet, JANTX1N6641US/TR pinout, JANTX1N6641US/TR application, or JANTX1N6641US/TR equivalent, key selection criteria include its 50 nA max reverse leakage at 10 µA test voltage, 3.0 pF junction capacitance at zero bias, -65°C to +175°C operating temperature range, and MIL-PRF-19500/609 qualification for space and defense systems.
Technical Context
The JANTX1N6641US/TR is a fast-switching, low-capacitance silicon diode optimized for high-speed digital and RF signal routing where minimal charge storage and rapid turn-off are critical. Its 5.0 ns reverse recovery time and 3.0 pF capacitance enable clean edge transitions in pulse generators and sample-and-hold circuits.
Designed per MIL-PRF-19500/609, it features a non-cavity glass case with tin/lead leads, 50 °C/W thermal resistance at L = 0, and polarity marked by cathode band. The device operates reliably across -65°C to +175°C without derating until +110°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 75 V - Maximum continuous reverse voltage before breakdown; defines safe clamping headroom in protection circuits. |
| trr | 5.0 ns - Measured at IF = 200 mA, IR = 10 mA, RL = 100 Ω; enables >100 MHz switching in digital logic interfaces. |
| Cj | 3.0 pF @ VR = 0 - Low junction capacitance minimizes signal distortion in RF detector and mixer applications. |
| IR @ 10 µA | 100 nA - Reverse leakage at rated VRWM; ensures low standby power loss in battery-backed hold circuits. |
| IF (max) | 300 mA - Continuous forward current rating; supports sustained pulse trains up to 200 mA average in waveform shaping. |
| TJ Range | -65°C to +175°C - Full military temperature range; validated for use in avionics power sequencers and downhole telemetry. |
Pinout & Package
Package: D-5D hermetically sealed glass case per MIL-PRF-19500/609; axial leads with cathode band marking; lead finish: tin/lead; thermal resistance: 50 °C/W (max) at L = 0.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in clamp or rectifier path; must withstand 2.5 A surge (8.3 ms). |
| Cathode | Forward current exit / reverse blocking terminal | Banded end; referenced to system ground or return rail; defines polarity-sensitive placement on PCB. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/609 Qualified | Qualified to Class JANTX level with full lot traceability, burn-in, and radiation hardness screening for flight-critical systems. |
| Hermetic Glass Package | D-5D non-cavity construction prevents moisture ingress and long-term parameter drift in humid or vacuum environments. |
| Fast trr & Low Cj | 5.0 ns recovery time and 3.0 pF capacitance jointly support sub-10 ns edge fidelity in pulse-forming networks. |
| Wide Temperature Operation | Rated -65°C to +175°C with no derating below +110°C; eliminates thermal margin uncertainty in engine-mounted electronics. |
Applications
| Radar Pulse Clamping | Digital Logic Level Shifting |
|---|---|
Use Scenario: Clamp fast-rising RF pulses in airborne radar receiver front-ends to protect sensitive LNAs from overvoltage transients. IC Role / Device Role / Timing Role: Fast-switching shunt limiter placed between antenna port and LNA input; conducts only during overvoltage excursions. Use Value: 5.0 ns trr and 75 V VRWM ensure transient energy is diverted before LNA damage occurs, preserving receiver dynamic range. | Use Scenario: Translate TTL logic levels to ECL-compatible thresholds in high-speed test instrumentation backplanes. IC Role / Device Role / Timing Role: Series-connected forward-biased diode providing precise 1.10 V drop to shift logic reference voltage. Use Value: Tight 1.10 V forward voltage at 200 mA ensures repeatable threshold alignment across temperature and unit-to-unit variation. |
| Spacecraft Power Sequencing | Downhole Telemetry Signal Conditioning |
Use Scenario: Isolate and delay power-up sequencing between avionics subsystems in satellite bus management units. IC Role / Device Role / Timing Role: Anode-coupled diode in RC-delay network controlling gate-enable timing of downstream DC/DC converters. Use Value: Stable 100 nA IR at -65°C ensures predictable delay accuracy over orbital thermal cycles without calibration drift. | Use Scenario: Protect analog front-end ADC inputs from ESD and cable-induced transients in oilfield logging tools operating at 175°C. IC Role / Device Role / Timing Role: Reverse-biased protection diode across ADC input pins, leveraging hermetic seal for reliability in corrosive wellbore gas. Use Value: Hermetic D-5D package and 175°C rating prevent parametric shift or failure under sustained high-temperature exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTX1N6640US | Lower VRWM (50 V), faster trr (4.0 ns), same package and temp range | Suitable for lower-voltage digital logic (<5 V rails) but not 75 V clamping | Select when circuit reverse voltage stays ≤50 V and sub-5 ns recovery is prioritized over voltage headroom. |
| JANTXV1N6641US | Same electrical specs, but qualified to higher JANTXV level with extended screening (e.g., 100% life test, enhanced radiation tolerance) | Required for mission-critical launch vehicle control systems where single-event latchup immunity is mandated | Choose when program requirements specify JANTXV-level reliability beyond standard JANTX. |
Compared with JANTX1N6641US/TR, JANTX1N6640US trades voltage margin for marginally faster switching, while JANTXV1N6641US retains identical performance but adds verified radiation hardness-making the original optimal for cost-sensitive, high-temp, 75 V-rated military platforms where full JANTXV screening is unnecessary.
Availability
JANTX1N6641US/TR is available at Aetrix Electronics and suitable for radar pulse clamping, spacecraft power sequencing, and downhole telemetry signal conditioning requiring stable component supply across extended temperature and radiation environments.
Supply support for JANTX1N6641US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.
The JANTX1N6641US/TR belongs to Microsemi's MIL-PRF-19500/609 qualified switching diode family, engineered for extreme-environment signal integrity in mission-critical timing, protection, and level-shifting functions.
FAQ
What is the maximum reverse working voltage (VRWM) for JANTX1N6641US/TR?
The JANTX1N6641US/TR has a maximum reverse working voltage of 75 V, as specified in its MIL-PRF-19500/609 electrical characteristics table. This rating applies at 25°C ambient and remains valid across its full -65°C to +175°C operating range, making JANTX1N6641US/TR suitable for high-voltage transient suppression in avionics and power conversion systems.
Does JANTX1N6641US/TR have a defined forward voltage (VF) specification?
Yes, JANTX1N6641US/TR specifies a typical forward voltage of 1.10 V at IF = 200 mA and 25°C. This value is confirmed in the "ELECTRICAL CHARACTERISTICS" section of its official datasheet and is used for precision level-shifting and biasing in high-reliability analog circuits where voltage drop stability is critical.
Is JANTX1N6641US/TR hermetically sealed?
Yes, JANTX1N6641US/TR uses a hermetically sealed D-5D glass package per MIL-PRF-19500/609. This construction prevents moisture ingress and ensures long-term parameter stability in vacuum, high-humidity, or corrosive environments-key for JANTX1N6641US/TR deployment in satellite payloads and oilfield downhole tools.
What is the reverse recovery time (trr) of JANTX1N6641US/TR?
JANTX1N6641US/TR has a reverse recovery time of 5.0 ns, measured at IF = 200 mA, IR = 10 mA, and RL = 100 Ω. This fast switching characteristic makes JANTX1N6641US/TR appropriate for high-frequency pulse generation, digital waveform shaping, and RF detector applications demanding minimal stored charge.
Can JANTX1N6641US/TR operate at 175°C continuously?
Yes, JANTX1N6641US/TR is rated for continuous operation from -65°C to +175°C with no derating required below +110°C. Its thermal resistance is 50 °C/W (max) at L = 0, and its metallurgically bonded construction ensures mechanical and electrical stability at peak temperature-verified per MIL-PRF-19500/609 testing protocols for JANTX1N6641US/TR.
JANTX1N6641US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, D
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 300mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/609
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5D
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTX1N6641US/TR FAQ
1.How can I place an order for JANTX1N6641US/TR through Aetrix?
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6.How does Aetrix verify that JANTX1N6641US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N6641US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N6641US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N6641US/TR?
All JANTX1N6641US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N6641US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N6641US/TR part is unused and in its original packaging.
Return procedure for JANTX1N6641US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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