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Microchip Technology JANTXV1N5419US/TR

Part No.:
JANTXV1N5419US/TR
Manufacturer:
Microchip Technology
Category:
Single Diodes
Package:
SQ-MELF, B
Datasheet:
AetrixJANTXV1N5419US/TR.pdf
Description:
UFR,FRR
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,665

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Product details

Overview

JANTXV1N5419US/TR from Microsemi is a military-qualified, voidless-hermetically sealed surface-mount fast recovery glass rectifier diode rated for 3 A average forward current, 500 V working peak reverse voltage (VRWM), and 250 ns maximum reverse recovery time (trr), used in high-reliability power conversion circuits such as DC-DC converter output stages and EMI-filtered AC-DC front ends.

For engineers reviewing the JANTXV1N5419US/TR datasheet, JANTXV1N5419US/TR pinout, JANTXV1N5419US/TR application, or JANTXV1N5419US/TR equivalent, key selection criteria include its MIL-PRF-19500/411 JANTXV qualification, Category 1 metallurgical bond, 6.5 °C/W junction-to-end-cap thermal resistance, and robust 80 A surge capability under 8.3 ms half-sine waveform.

Technical Context

This device belongs to Microsemi's SQ-MELF "B" package (D-5B) fast recovery rectifier family, designed for high-reliability environments where hermetic sealing and radiation tolerance are mandatory. It features quadruple-layer passivation and controlled avalanche behavior with peak reverse power capability, enabling operation in harsh thermal and radiation-exposed conditions without degradation.

The JANTXV1N5419US/TR delivers 1.5 V maximum forward voltage at 9 A, 1.0 µA max reverse leakage at VRWM and 25 °C, and 20 µA at 100 °C - all specified per MIL-PRF-19500/411 test protocols. Its 539 mg mass and tungsten-slug construction ensure mechanical stability and low thermal impedance in conduction-limited applications.

Key Specifications

Parameter Value and Actual Design Meaning
VRWM 500 V - Maximum continuous reverse voltage before breakdown; defines safe operating margin in 400–500 V DC bus applications.
trr 250 ns - Reverse recovery time measured at IF = 0.5 A, IRM = 1 A; enables use in 50–100 kHz switching topologies with minimal commutation loss.
IO @ TA = 55 °C 3 A - Average rectified forward current at 55 °C ambient; derates linearly to 2 A at 100 °C, supporting thermally constrained PCB layouts.
RθJEC 6.5 °C/W - Junction-to-end-cap thermal resistance; allows direct heat sinking via end caps, critical for high-duty-cycle power supplies.
IFSM 80 A - Non-repetitive forward surge current at 8.3 ms half-sine; withstands inrush and fault currents in industrial motor drives and UPS systems.
VF @ 9 A 1.5 V - Forward voltage drop at high transient load; determines conduction loss and thermal rise during short-duration overloads.
TJ/TSTG –65 to +175 °C - Operating and storage temperature range; supports deployment in aerospace avionics and downhole oilfield electronics.

Pinout & Package

Package: SQ-MELF "B" (D-5B), hermetically sealed voidless glass with tungsten slugs and copper end caps plated with Sn/Pb. Cathode indicated by single band. Weight: 539 mg. Dimensions: BL = 0.200–0.225 in (5.08–5.72 mm), BD = 0.137–0.148 in (3.48–3.76 mm).

Pin/Terminal Circuit Role Design Meaning
Anode (End Cap) Forward current entry point Directly bonded to tungsten slug; serves as primary thermal path and high-current interface in PCB-mounted configurations.
Cathode (Banded End Cap) Forward current exit / reverse blocking terminal Marked with cathode band; engineered for controlled avalanche and stable reverse leakage up to 100 °C ambient.

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates moisture ingress and internal delamination, ensuring >20-year reliability in vacuum or high-humidity military enclosures.
Category 1 metallurgical bond Guarantees interfacial integrity between silicon die and tungsten slug under thermal cycling (–65 to +175 °C), preventing bond lift or crack propagation.
Controlled avalanche capability Enables safe clamping of inductive kickback in relay drivers and solenoid controls without catastrophic failure or parameter drift.
Quadruple-layer passivation Provides immunity to surface ion migration and contamination-induced leakage, validated per MIL-PRF-19500/411 screening.
Low RθJEC (6.5 °C/W) Permits direct end-cap thermal coupling to heatsinks or copper pour, reducing junction temperature rise by ≥15 °C vs. standard SOD-123 packages.

Applications

Avionics Power Distribution Downhole Telemetry Power Supply

Use Scenario: Rectification of 3-phase 400 Hz aircraft generator output into regulated 28 V DC bus.

IC Role / Device Role / Timing Role: Output rectifier in full-wave bridge configuration handling 3 A continuous and 80 A surge transients.

Use Value: Hermetic seal and –65 to +175 °C rating prevent condensation-induced failure and thermal fatigue in pressurized cabin and unpressurized bay environments.

Use Scenario: Input-stage rectification in high-temperature (>150 °C) logging tool power supply operating in oil well boreholes.

IC Role / Device Role / Timing Role: Primary AC-to-DC conversion element exposed to sustained 125–175 °C ambient and gamma radiation.

Use Value: Inherent radiation hardness and controlled avalanche behavior maintain regulation integrity without external snubbers or redundancy.

Military Vehicle DC-DC Converters EMI-Filtered Industrial SMPS

Use Scenario: Secondary-side synchronous rectifier replacement in 24 V input, 5 V/10 A isolated DC-DC modules for armored vehicle subsystems.

IC Role / Device Role / Timing Role: Fast-recovery catch diode in active clamp forward topology, managing 100 kHz switching transitions.

Use Value: 250 ns trr minimizes reverse recovery loss while JANTXV qualification ensures compliance with MIL-STD-810G shock/vibe and MIL-STD-461E conducted emissions requirements.

Use Scenario: Bridge rectifier in Class B EMI-compliant industrial switch-mode power supply with common-mode choke and X/Y capacitors.

IC Role / Device Role / Timing Role: High-surge-capable input rectifier subjected to line surges and capacitor-input filter stress.

Use Value: 80 A IFSM and 500 V VRWM provide 2× safety margin against 300 VAC RMS transients and L-C resonance peaks in 480 VAC three-phase systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast recovery rectifier applications.

Alternative Part Technical Difference Application Difference Selection Advice
Vishay VS-3EY50A-M3/54 Commercial-grade, 500 V VRWM, 3 A IO, but only 150 ns trr and no MIL qualification; RoHS-compliant matte-tin finish. Lacks JANTXV-level screening, radiation hardness, and hermetic seal; unsuitable for aerospace or nuclear environments. Select when cost, lead time, or RoHS compliance outweigh military reliability requirements.
ON Semiconductor MUR360RLG Ultrafast recovery (60 ns trr), 600 V VRWM, 3 A IO, plastic DO-214AB package; no hermetic seal or MIL qualification. Higher speed enables >200 kHz operation but sacrifices long-term reliability in humid, high-vibration, or radiation-prone settings. Prefer for commercial high-frequency SMPS where thermal cycling and radiation exposure are not concerns.

Compared with VS-3EY50A-M3/54 and MUR360RLG, the JANTXV1N5419US/TR trades higher trr for guaranteed hermeticity, Category 1 bonding, and full MIL-PRF-19500/411 JANTXV qualification - making it the sole choice for mission-critical systems where field failure is unacceptable.

Availability

JANTXV1N5419US/TR is available at Aetrix Electronics and suitable for avionics power distribution, downhole telemetry power supplies, and military vehicle DC-DC converters requiring stable component supply across extended product lifecycles and defense procurement cycles.

Supply support for JANTXV1N5419US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, hermetic, and MIL-qualified components.

The JANTXV1N5419US/TR belongs to Microsemi's military-qualified fast recovery rectifier product line, developed specifically for high-integrity power conversion in environments where parametric drift, moisture ingress, or thermal fatigue must be eliminated.

FAQ

What is the maximum junction temperature rating for JANTXV1N5419US/TR?

The JANTXV1N5419US/TR has a maximum junction temperature (TJ) of +175 °C and a storage temperature (TSTG) range of –65 to +175 °C, verified per MIL-PRF-19500/411 testing. This rating enables operation in engine-bay electronics and downhole tools where ambient temperatures exceed 150 °C. The device maintains electrical stability across this full range due to its Category 1 metallurgical bond and voidless glass seal.

Does JANTXV1N5419US/TR have a RoHS-compliant version?

No - the JANTXV1N5419US/TR uses Sn/Pb-plated copper end caps and is non-RoHS compliant, consistent with MIL-PRF-19500/411 JANTXV requirements. RoHS-compliant matte-tin versions are available only for commercial-grade 1N5419US devices (no JAN/JANTX/JANTXV/JANS suffix), not for JANTXV1N5419US/TR. This distinction is documented in Microsemi's T4-LDS-0231-1 datasheet revision notes.

What is the reverse recovery time (trr) specification for JANTXV1N5419US/TR?

The JANTXV1N5419US/TR has a maximum reverse recovery time (trr) of 250 ns, measured under IF = 0.5 A, IRM = 1 A, and IR(REC) = 0.250 A per MIL-PRF-19500/411 test conditions. This value is specific to the 1N5419US variant and differs from faster variants like 1N5415US (150 ns) and slower ones like 1N5420US (400 ns), confirming its optimized balance of speed and ruggedness for 400–500 V applications.

How is polarity marked on JANTXV1N5419US/TR?

JANTXV1N5419US/TR uses a single cathode band on the glass body to indicate polarity, consistent with JEDEC-standard marking for MELF devices. The banded end cap is the cathode; the opposite end cap is the anode. No alphanumeric marking is applied - only the band - as confirmed in the "MECHANICAL and PACKAGING" section of Microsemi's T4-LDS-0231-1 datasheet.

What is the thermal resistance from junction to end cap (RθJEC) for JANTXV1N5419US/TR?

The JANTXV1N5419US/TR has a specified thermal resistance of 6.5 °C/W from junction to end cap (RθJEC), measured per MIL-PRF-19500/411. This low value results from direct tungsten-slug bonding and copper end-cap construction, enabling efficient heat transfer to PCB copper pours or external heatsinks - a key advantage over plastic-packaged rectifiers with RθJA > 40 °C/W.

JANTXV1N5419US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, B
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
500 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 9 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
250 ns
Current - Reverse Leakage @ Vr:
1 µA @ 500 V
Capacitance @ Vr, F:
-
Grade:
Military
Qualification:
MIL-PRF-19500/411
Mounting Type:
Surface Mount
Supplier Device Package:
B, SQ-MELF
Operating Temperature - Junction:
-65°C ~ 175°C

JANTXV1N5419US/TR FAQ

1.How can I place an order for JANTXV1N5419US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N5419US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N5419US/TR reliable?

The price and inventory of JANTXV1N5419US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5419US/TR is usually 5 days.

3.What payment methods are accepted for JANTXV1N5419US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5419US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTXV1N5419US/TR?

JANTXV1N5419US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N5419US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N5419US/TR?

For technical support, including JANTXV1N5419US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5419US/TR requirements.

6.How does Aetrix verify that JANTXV1N5419US/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N5419US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5419US/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N5419US/TR?

All JANTXV1N5419US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5419US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N5419US/TR part is unused and in its original packaging.

Return procedure for JANTXV1N5419US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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