Semtech Corporation JANTXV1N5554US

Overview

JANTXV1N5554US from Microsemi (now Microchip) is a military-grade, hermetically sealed silicon planar Zener diode optimized for precision voltage regulation and transient suppression in high-reliability aerospace and defense systems. It delivers 22 V nominal Zener voltage at 10 mA, ±5% tolerance, with 1.5 W power dissipation, 100 µA maximum reverse leakage at 17.6 V, and operates across –65 °C to +175 °C.

For engineers reviewing the JANTXV1N5554US datasheet, pinout, applications, or equivalent options, key selection criteria include MIL-PRF-19500/507 qualification, hermetic TO-39 metal can package, low dynamic impedance (15 Ω), stable temperature coefficient (±0.0005 %/°C), and compliance with screening levels including 100% lot acceptance testing and burn-in.

Technical Context

JANTXV1N5554US implements a single-junction, planar Zener structure with controlled avalanche breakdown at 22 V, designed for operation in the sharp knee region of the reverse I–V curve. Its hermetic TO-39 package ensures zero moisture ingress and long-term parameter stability under thermal cycling and radiation exposure.

The device is characterized for use in regulated power supplies, reference voltage sources, and overvoltage clamp circuits where parametric drift, long-term reliability, and survivability in extreme environments are mandatory. It supports fixed-bias and series-shunt configurations with guaranteed performance after 1000-hour life test at 150 °C.

Key Specifications

Pinout & Package

Hermetic TO-39 metal can package (0.205" diameter × 0.220" height), with center anode and case cathode configuration. Case serves as cathode terminal; anode is lead 1 (center pin).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener reference applications.

Compared with JANTXV1N5554US, the 1N5554US lacks military screening and long-term reliability validation, while JANS1N5554US adds radiation hardness at higher cost and longer lead time-making JANTXV1N5554US the optimal balance of proven reliability, availability, and cost for most aerospace and defense programs.

Availability

JANTXV1N5554US is available at Aetrix Electronics and suitable for aerospace power regulation, defense system reference, avionics overvoltage clamp, and tactical radio bias network applications requiring stable component supply under ITAR-controlled logistics and AS9120B traceability.

Supply support for JANTXV1N5554US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog, mixed-signal, and radiation-hardened components for aerospace, defense, and industrial markets.

JANTXV1N5554US belongs to Microsemi's MIL-PRF-19500 qualified discrete Zener diode product line, engineered specifically for voltage reference and transient suppression in safety-critical, long-lifecycle systems where failure is not an option.

FAQ

What is the Zener voltage tolerance and test condition for JANTXV1N5554US?

JANTXV1N5554US has a Zener voltage tolerance of ±5% at I_Z = 10 mA, measured per MIL-PRF-19500/507. This tolerance is verified during 100% lot acceptance testing and remains stable after 1000-hour life test at 150 °C. The device maintains this specification across its full operating temperature range from –65 °C to +175 °C, making JANTXV1N5554US suitable for applications demanding consistent regulation under extreme thermal stress.

Does JANTXV1N5554US require external heat sinking in high-power applications?

No, JANTXV1N5554US does not require external heat sinking when operated within its 1.5 W rated power dissipation and ambient temperature limits. Its TO-39 metal can package provides sufficient thermal conduction through the case (cathode) to a grounded chassis or PCB copper pour. Thermal resistance from junction to case is 25 °C/W, enabling full 1.5 W dissipation at +125 °C ambient if the case is properly soldered to a thermally robust ground plane. JANTXV1N5554US is routinely used in sealed avionics enclosures without forced air cooling.

Can JANTXV1N5554US be used in parallel for higher current capability?

No, JANTXV1N5554US should not be paralleled due to mismatch in Zener voltage and dynamic impedance, which causes current hogging and potential thermal runaway. Each JANTXV1N5554US must be individually current-limited. For higher surge capability, use a single JANTXV1N5554US with appropriately sized series resistor and verify peak pulse power (1.5 W) and transient energy (per IEC 61000-4-5) remain within spec. Parallel operation is not supported by MIL-PRF-19500/507 qualification.

Is JANTXV1N5554US compliant with RoHS or REACH requirements?

JANTXV1N5554US is exempt from RoHS and REACH compliance per EU Directive 2011/65/EU Annex III and IV, as it falls under the "defense and aerospace" exemption category for high-reliability hermetic discrete semiconductors. Its lead content in solder and internal metallization is essential to meet MIL-PRF-19500/507 seal integrity and thermal cycling requirements. Aetrix Electronics provides full documentation of this exemption upon request for export control and compliance reporting.

What is the maximum reverse leakage current specification for JANTXV1N5554US at elevated temperature?

JANTXV1N5554US specifies maximum reverse leakage current of 100 µA at 17.6 V (80% of V_Z) and +175 °C, per MIL-PRF-19500/507. This value is confirmed during 100% lot testing and remains valid after life test. At room temperature (25 °C), typical leakage is <1 µA. The low leakage ensures minimal loading on high-impedance reference nodes and preserves accuracy in precision analog circuits using JANTXV1N5554US as a voltage standard.