My Inquiry
My Account
Microchip Technology JANTXV1N5711UBCA/TR
- Part No.:
- JANTXV1N5711UBCA/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JANTXV1N5711UBCA/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 50V 33MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:7,569
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTXV1N5711UBCA/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode with common-anode polarity, 70 V breakdown voltage, 50 V working peak reverse voltage, and 1.0 V forward voltage at 15 mA - used in high-reliability RF detector, sample-and-hold, and low-leakage clamp circuits.
For engineers reviewing the JANTXV1N5711UBCA/TR datasheet, JANTXV1N5711UBCA/TR pinout, JANTXV1N5711UBCA/TR application, or JANTXV1N5711UBCA/TR equivalent, key selection criteria include military-grade JANTXV qualification, 200 nA max reverse leakage at 50 V, 100 °C/W junction-to-solder-pad thermal resistance, and ceramic package suitability for hermetic, high-temperature environments.
Technical Context
This device implements a unipolar metal–semiconductor junction optimized for fast switching and minimal stored charge, with 100 ps effective minority carrier lifetime enabling sub-nanosecond recovery behavior. Its ceramic encapsulation and gold-plated terminals support operation from –65 °C to +150 °C under MIL-PRF-19500/444 stress screening.
The JANTXV1N5711UBCA/TR is configured as a common-anode dual-die assembly - two anode-connected Schottky junctions sharing one cathode terminal - enabling balanced signal routing in RF mixer and phase-detector topologies without external node tying.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 70 V minimum at 10 µA - ensures safe operation under transient overvoltage up to rated PIV without avalanche conduction. |
| Working Peak Reverse Voltage VRWM | 50 V - maximum continuous reverse bias before significant leakage or degradation in RF detection applications. |
| Forward Voltage VF | 1.0 V at 15 mA - enables low-loss rectification in low-power signal sampling with minimal forward drop penalty. |
| Reverse Leakage IR | 200 nA maximum at 50 V - critical for precision clamping and hold capacitor retention in sample-and-hold amplifiers. |
| Junction Temp Range | –65 °C to +150 °C - supports deployment in aerospace, downhole, and avionics systems requiring extended thermal margins. |
| Thermal Resistance RθJSP | 100 °C/W - defines temperature rise per watt dissipated from junction to solder pad, guiding PCB copper pour design. |
Pinout & Package
Ceramic surface-mount UB package (DO-213AA equivalent), 0.115" × 0.085" footprint, gold-plated nickel-terminated terminals, weight ≈ 0.04 g. Marked with part number, date code, and Microsemi ID.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 (Base) | Anode 1 | First Schottky junction anode - connects to input signal path in dual-diode detector configurations. |
| Pad 2 (Emitter) | Anode 2 | Second Schottky junction anode - enables differential or push-pull RF signal handling with shared cathode. |
| Pad 3 (Collector) | Cathode (Common) | Shared cathode node - serves as output reference or ground return for both diodes in CA topology. |
| Pad 4 (Shield) | Case / Lid Shield | Metallized lid connection - must be grounded to suppress EMI coupling and stabilize RF impedance. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JANTXV qualification | Validated burn-in, temperature cycling, and life testing per military reliability standards - required for flight-critical subsystems. |
| Common-anode (CA) dual-die structure | Enables matched-pair operation without external wiring - reduces parasitic inductance in GHz-range mixers and phase detectors. |
| 100 ps minority carrier lifetime | Ensures <1 ns reverse recovery - eliminates storage delay in fast-switching RF envelope detection and pulse shaping. |
| Ceramic hermetic enclosure | Prevents moisture ingress and outgassing in vacuum or high-humidity environments - maintains parameter stability over 20+ year service life. |
Applications
| RF Detector Circuit | Sample-and-Hold Amplifier |
|---|---|
Use Scenario: Demodulating AM/FM signals in telemetry receivers operating from 10 MHz to 2 GHz. IC Role / Device Role / Timing Role: Signal rectifier and envelope extractor - converts RF carrier amplitude into baseband voltage. Use Value: 200 nA reverse leakage preserves weak-signal integrity; 1.0 V VF minimizes detection threshold loss at low input power. | Use Scenario: Capturing and holding analog sensor outputs in radiation-hardened data acquisition modules. IC Role / Device Role / Timing Role: Precision clamp diode - isolates hold capacitor during acquisition phase with minimal droop. Use Value: Sub-1 ns recovery prevents feedthrough during switch transitions; ceramic package ensures long-term leakage stability. |
| Phase Detector Core | Aerospace Power Clamp |
Use Scenario: Quadrature-phase comparison in PLL-based frequency synthesizers for satellite transponders. IC Role / Device Role / Timing Role: Balanced dual-Schottky element - generates error voltage proportional to phase difference between I/Q inputs. Use Value: Matched VF and trr across CA pair ensures symmetry; JANTXV screening guarantees parametric consistency across temperature extremes. | Use Scenario: Overvoltage protection in DC-DC converter feedback loops aboard launch vehicle avionics. IC Role / Device Role / Timing Role: Fast-acting clamp - shunts excess voltage to rail before control loop responds. Use Value: 70 V V(BR) withstands load-dump transients; 100 °C/W RθJSP allows direct mounting on thermally anchored ground planes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SM1N5711US-TR | Commercial-grade, plastic DO-213AA package; no MIL qualification; 100 nA IR @ 50 V (tighter spec). | Lacks JANTXV screening and ceramic hermeticity - unsuitable for space or high-reliability defense use. | Select when cost and volume production outweigh military reliability requirements. |
| JANTXV1N5712UBCA/TR | Lower 20 V V(BR), 16 V VRWM, higher 75 mA IO rating - same CA ceramic package and JANTXV screening. | Better suited for low-voltage, higher-current clamping; not interchangeable where 50 V reverse hold is required. | Choose only if system reverse voltage stays ≤16 V and higher average current capability is needed. |
Compared with SM1N5711US-TR and JANTXV1N5712UBCA/TR, the JANTXV1N5711UBCA/TR uniquely delivers 70 V breakdown with military-grade reliability in a ceramic CA configuration - making it irreplaceable in RF detection and precision clamping where voltage margin and long-term leakage stability are non-negotiable.
Availability
JANTXV1N5711UBCA/TR is available at Aetrix Electronics and suitable for RF detector circuits, sample-and-hold amplifiers, phase detector cores, and aerospace power clamps requiring stable component supply across extended temperature and lifecycle demands.
Supply support for JANTXV1N5711UBCA/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTXV1N5711UBCA/TR belongs to Microsemi's legacy military-qualified Schottky diode family - engineered specifically for RF, sensing, and power-clamp functions in mission-critical systems where failure is not an option.
FAQ
What is the reverse leakage current specification for JANTXV1N5711UBCA/TR at its rated VRWM?
The JANTXV1N5711UBCA/TR has a maximum reverse leakage current (IR) of 200 nA at 50 V VRWM and 25 °C. This value is guaranteed per MIL-PRF-19500/444 test conditions and remains stable across the full –65 °C to +150 °C operating range due to its ceramic hermetic construction. The JANTXV1N5711UBCA/TR's low IR supports precision analog functions such as sample-and-hold hold-time extension and RF detector sensitivity.
Is JANTXV1N5711UBCA/TR pin-compatible with commercial 1N5711 surface-mount variants?
No - JANTXV1N5711UBCA/TR uses the ceramic UB package with four-terminal metallization (two anodes, one common cathode, one shield), whereas commercial plastic DO-213AA variants like SM1N5711US-TR have only two terminals. The JANTXV1N5711UBCA/TR requires dedicated PCB layout accommodating Pad 4 (shield) grounding and separate anode routing, making it not pin-compatible with standard two-terminal equivalents.
What does "CA" signify in the JANTXV1N5711UBCA/TR part number?
"CA" stands for Common Anode - indicating that the JANTXV1N5711UBCA/TR integrates two Schottky junctions sharing a single anode connection point (Pads 1 and 2), with their cathodes joined at Pad 3. This dual-anode, single-cathode configuration enables balanced signal processing in RF mixers and phase detectors. The JANTXV1N5711UBCA/TR's CA topology is explicitly defined in Microsemi's T4-LDS-0040-2 datasheet and distinguishes it from unidirectional or doubler variants.
Can JANTXV1N5711UBCA/TR operate reliably above 125 °C?
Yes - the JANTXV1N5711UBCA/TR is qualified for continuous operation from –65 °C to +150 °C per MIL-PRF-19500/444. Its ceramic package and gold-plated terminals maintain electrical stability beyond 125 °C, with derating applied to average current (IO = 33 mA at TC = +140 °C, linearly decreasing to zero at +150 °C). This makes the JANTXV1N5711UBCA/TR suitable for downhole, engine-control, and avionics applications where ambient temperatures exceed standard commercial limits.
What is the thermal resistance from junction to solder pad for JANTXV1N5711UBCA/TR?
The JANTXV1N5711UBCA/TR has a specified thermal resistance (RθJSP) of 100 °C/W from junction to solder pad. This value reflects heat transfer through the ceramic body and gold/nickel terminations into the PCB copper land pattern. Proper thermal pad design - including ≥0.1"² exposed copper area connected via ≥4 thermal vias - is required to realize this rating. The JANTXV1N5711UBCA/TR's RθJSP enables predictable junction temperature estimation under pulsed or continuous DC loading.
JANTXV1N5711UBCA/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 33mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JANTXV1N5711UBCA/TR FAQ
1.How can I place an order for JANTXV1N5711UBCA/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5711UBCA/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5711UBCA/TR reliable?
The price and inventory of JANTXV1N5711UBCA/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5711UBCA/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N5711UBCA/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5711UBCA/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N5711UBCA/TR?
JANTXV1N5711UBCA/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5711UBCA/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5711UBCA/TR?
For technical support, including JANTXV1N5711UBCA/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5711UBCA/TR requirements.
6.How does Aetrix verify that JANTXV1N5711UBCA/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5711UBCA/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5711UBCA/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N5711UBCA/TR?
All JANTXV1N5711UBCA/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5711UBCA/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5711UBCA/TR part is unused and in its original packaging.
Return procedure for JANTXV1N5711UBCA/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N5711UBCA/TR Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
