My Inquiry
My Account
Microchip Technology JANTXV1N5711UBD/TR
- Part No.:
- JANTXV1N5711UBD/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JANTXV1N5711UBD/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 50V 33MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:4,416
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTXV1N5711UBD/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode qualified to MIL-PRF-19500/444 at JANTXV level, with 70 V breakdown voltage, 1.0 V forward voltage at 15 mA, and 50 V working peak reverse voltage, used in high-reliability RF detector and sample-and-hold circuits.
For engineers reviewing the JANTXV1N5711UBD/TR datasheet, JANTXV1N5711UBD/TR pinout, JANTXV1N5711UBD/TR application, or JANTXV1N5711UBD/TR equivalent, key selection criteria include low reverse leakage (200 nA @ 50 V), fast switching (100 ps minority carrier lifetime), ceramic package thermal resistance (100 °C/W), and military-grade temperature range (-65 °C to +150 °C).
Technical Context
This device implements a unidirectional Schottky junction optimized for low forward voltage drop and minimal reverse recovery charge. Its ceramic hermetic package enables stable operation under thermal cycling and radiation exposure typical of aerospace and defense systems.
The JANTXV1N5711UBD/TR features gold-plated terminals over nickel underplate, EIA-418D tape-and-reel packaging, and a 0.04 g mass. It exhibits 2.0 pF capacitance at 0 V and 1 MHz, supporting high-frequency signal routing without parasitic degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage | 70 V minimum - ensures safe operation up to 70 V reverse bias before avalanche onset |
| Forward Voltage | 1.0 V at 15 mA - enables low-loss rectification in low-voltage RF detection paths |
| Working Peak Reverse Voltage | 50 V - defines maximum continuous reverse voltage in pulsed or AC-coupled applications |
| Reverse Leakage Current | 200 nA at 50 V - supports precision sampling with minimal signal corruption |
| Junction Temperature Range | -65 °C to +150 °C - certified for extended operation in harsh environmental conditions |
| Thermal Resistance | 100 °C/W (junction-to-solder pad) - informs thermal design margin for PCB copper pad sizing |
| Capacitance | 2.0 pF at 0 V, 1 MHz - preserves bandwidth in UHF receiver front-end and mixer bias networks |
Pinout & Package
Ceramic surface-mount UB package with two terminals: base-mounted anode and cathode pads. Hermetically sealed, gold-plated nickel terminals, 0.04 g mass, dimensions per MIL-PRF-19500/444 drawing T4-LDS-0040-2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 | Anode | Primary current entry point; connected to RF input or signal source in detector configurations |
| Pad 2 | Cathode | Current exit path; tied to ground or bias network in clamp/sampling circuits |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JANTXV qualification | Guarantees screening, testing, and traceability for flight-critical and defense electronics |
| Low-profile ceramic package | Enables integration into space-constrained RF modules without compromising hermeticity or thermal stability |
| 100 ps minority carrier lifetime | Minimizes stored charge and enables sub-nanosecond switching in pulse detection circuits |
| ESD sensitivity Class 1 | Requires handling per MIL-STD-1686; confirms suitability for controlled assembly environments |
Applications
| Radar Pulse Detection | RF Signal Sampling |
|---|---|
Use Scenario: Detecting short-duration RF pulses in airborne radar receivers operating at X-band frequencies. IC Role / Device Role / Timing Role: Unidirectional Schottky detector diode converting RF envelope to baseband DC pulse. Use Value: 1.0 V forward voltage at 15 mA and 200 nA reverse leakage preserve pulse fidelity and dynamic range. | Use Scenario: Capturing instantaneous RF amplitude in wideband communication test equipment. IC Role / Device Role / Timing Role: Sample-and-hold front-end diode providing low-capacitance, low-leakage signal gating. Use Value: 2.0 pF junction capacitance and -65 °C to +150 °C rating ensure stable sampling across environmental extremes. |
| Military Telemetry Receivers | Secure Satellite Modem Front-Ends |
Use Scenario: Demodulating telemetry signals in launch vehicle avionics under high-vibration and thermal stress. IC Role / Device Role / Timing Role: High-reliability rectifier in AM envelope detectors for downlink data recovery. Use Value: JANTXV qualification and 100 °C/W thermal resistance support uninterrupted operation during ascent phase. | Use Scenario: Biasing and signal routing in L-band satellite modem upconverters deployed on geostationary platforms. IC Role / Device Role / Timing Role: Low-leakage switch/detector in local oscillator injection and IF coupling networks. Use Value: Ceramic hermetic seal and 70 V breakdown withstand ionizing radiation and vacuum outgassing effects. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5711UR-1 | DO-213AA plastic package; same electrical specs but non-hermetic; 150 °C max junction temp | Suitable for commercial/mil-temp PCBs where hermeticity not required; lower cost | Select when radiation tolerance and long-term vacuum stability are not mandatory |
| SMJ1N5711US | Same UB ceramic package; screened to SMD-5962-00010; 50 V VRWM vs 50 V; identical VF/IR | Qualified to DLA SMD standard; preferred for DoD procurement contracts requiring SMD compliance | Select when DLA SMD-5962-00010 documentation and traceability are contractually required |
Compared with JANTXV1N5711UBD/TR, JANTXV1N5711UR-1 trades hermetic reliability for cost and board-level compatibility, while SMJ1N5711US maintains identical performance and packaging but adds DLA SMD compliance for formal defense acquisition programs.
Availability
JANTXV1N5711UBD/TR is available at Aetrix Electronics and suitable for radar pulse detection, RF signal sampling, and military telemetry receivers requiring stable component supply across extended temperature and radiation environments.
Supply support for JANTXV1N5711UBD/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTXV1N5711UBD/TR belongs to Microsemi's legacy military Schottky diode product line, engineered specifically for RF detection, sampling, and high-stability rectification in mission-critical electronic systems.
FAQ
What is the maximum average rectified output current for JANTXV1N5711UBD/TR?
The JANTXV1N5711UBD/TR has a maximum average rectified output current (IO) of 33 mA at 25 °C. This rating derates linearly to zero at +150 °C when the external case and solder pad temperatures reach +140 °C, per the manufacturer's thermal derating curve in T4-LDS-0040-2 Rev. 1.
Is JANTXV1N5711UBD/TR RoHS compliant?
Yes, JANTXV1N5711UBD/TR is RoHS compliant by design, as confirmed in the official Microsemi datasheet T4-LDS-0040-2. Its ceramic package, gold/nickel terminal plating, and lead-free construction meet RoHS Directive 2011/65/EU requirements without exemptions.
What does the "D" suffix indicate in JANTXV1N5711UBD/TR?
The "D" suffix in JANTXV1N5711UBD/TR denotes a doubler polarity configuration - meaning the device contains two Schottky junctions arranged to double input voltage in specialized RF multiplier circuits. This differs from the standard unidirectional version (blank suffix) and must be verified against circuit topology requirements.
Can JANTXV1N5711UBD/TR replace JANTXV1N5711UB?
No - JANTXV1N5711UBD/TR is not a direct replacement for JANTXV1N5711UB. The "D" suffix indicates a doubler configuration, whereas JANTXV1N5711UB is unidirectional. Their internal structures, pinouts, and electrical behavior differ; substituting one for the other will cause functional failure in rectifier or detector circuits.
What is the reverse recovery time of JANTXV1N5711UBD/TR?
The JANTXV1N5711UBD/TR does not specify reverse recovery time (trr) because it is a Schottky diode with majority-carrier conduction. Instead, its effective minority carrier lifetime is specified as 100 ps - a metric that directly correlates to ultrafast switching speed and absence of minority-carrier storage delay.
JANTXV1N5711UBD/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io) (per Diode):
- 33mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 15 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 200 nA @ 50 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JANTXV1N5711UBD/TR FAQ
1.How can I place an order for JANTXV1N5711UBD/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5711UBD/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5711UBD/TR reliable?
The price and inventory of JANTXV1N5711UBD/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5711UBD/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N5711UBD/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5711UBD/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N5711UBD/TR?
JANTXV1N5711UBD/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5711UBD/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5711UBD/TR?
For technical support, including JANTXV1N5711UBD/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5711UBD/TR requirements.
6.How does Aetrix verify that JANTXV1N5711UBD/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5711UBD/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5711UBD/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N5711UBD/TR?
All JANTXV1N5711UBD/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5711UBD/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5711UBD/TR part is unused and in its original packaging.
Return procedure for JANTXV1N5711UBD/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N5711UBD/TR Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
