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Microchip Technology JANTXV1N5712UBCA/TR
- Part No.:
- JANTXV1N5712UBCA/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JANTXV1N5712UBCA/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 16V 75MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:9,540
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Product details
Overview
JANTXV1N5712UBCA/TR from Microsemi is a military-qualified ceramic surface-mount Schottky barrier diode with common-anode polarity, 20 V breakdown voltage, 1.0 V forward voltage at 35 mA, and 16 V working peak reverse voltage - used in high-reliability RF detector, sample-and-hold, and low-leakage clamping circuits.
For engineers reviewing the JANTXV1N5712UBCA/TR datasheet, JANTXV1N5712UBCA/TR pinout, JANTXV1N5712UBCA/TR application, or JANTXV1N5712UBCA/TR equivalent, key selection factors include its MIL-PRF-19500/444 JANTXV qualification, 150 nA max reverse leakage at 16 V, 2.0 pF junction capacitance, ceramic hermetic package, and common-anode dual-die configuration for balanced signal routing.
Technical Context
This device implements a dual-die common-anode Schottky structure in a hermetically sealed ceramic surface-mount package (UB), enabling matched conduction paths with low forward voltage and minimal reverse recovery. Its 100 ps effective minority carrier lifetime supports high-frequency switching up to UHF bands.
Qualified to MIL-PRF-19500/444 at JANTXV level, it operates across –65 °C to +150 °C with 100 °C/W junction-to-solder-pad thermal resistance and ESD sensitivity Class 1 - critical for aerospace, defense radar, and secure comms front-end designs where parameter stability under thermal stress and radiation tolerance are mandatory.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 20 V @ 10 µA - defines absolute reverse blocking limit before avalanche onset; sets maximum safe DC bias headroom. |
| Working Peak Reverse Voltage VRWM | 16 V - maximum continuous reverse voltage usable in rectifier/clamp applications without degradation. |
| Forward Voltage VF | 1.0 V @ 35 mA - low conduction loss enables efficient signal detection and low-drop power routing. |
| Reverse Leakage IR | 150 nA @ 16 V - ultra-low leakage preserves signal integrity in precision RF sampling and hold circuits. |
| Junction Capacitance CT | 2.0 pF @ 0 V, 1 MHz - minimizes capacitive loading on high-impedance nodes in mixer and detector stages. |
| Average Rectified Current IO | 75 mA - supports sustained current handling in pulsed RF envelope detection and bias feed networks. |
| Thermal Resistance RθJSP | 100 °C/W - determines temperature rise above solder pad under load; informs thermal layout for high-density PCBs. |
Pinout & Package
Ceramic surface-mount UB package (hermetically sealed, gold-plated nickel terminals, ~0.04 g weight); dimensions per MIL-PRF-19500/444 drawing: 0.115–0.128 in length × 0.085–0.108 in width × 0.046–0.056 in height (2.92–3.25 mm × 2.16–2.74 mm × 1.17–1.42 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 (Base) | Common Anode Terminal | Shared anode connection for both diode dies; requires external biasing to positive rail. |
| Pad 2 (Emitter) | Cathode of Diode 1 | Independent cathode output for first Schottky path; routed to signal node or filter network. |
| Pad 3 (Collector) | Cathode of Diode 2 | Independent cathode output for second Schottky path; enables differential or dual-path detection. |
| Pad 4 (Shield) | Hermetic Lid Ground | Connected to metallized lid; must be tied to system ground for EMI shielding and thermal dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JANTXV qualification | Validated reliability for flight-critical systems: burn-in, temperature cycling, and hermeticity testing per military standard. |
| Common-anode dual-die architecture | Enables matched-pair operation in balanced modulators, quadrature detectors, and dual-path clamping without discrete matching. |
| 100 ps minority carrier lifetime | Supports sub-nanosecond switching; essential for UHF receiver front-ends and fast pulse demodulation. |
| Low-profile ceramic hermetic package | Eliminates moisture ingress and wirebond failure modes; maintains parameter stability over 20+ year service life. |
| RoHS-compliant by design | No lead, cadmium, or halogenated flame retardants - meets export control and green procurement requirements. |
Applications
| Radar Pulse Detection | Secure Communications Receiver |
|---|---|
Use Scenario: Detecting short-duration RF pulses in airborne fire-control radar receivers operating at X-band (8–12 GHz). IC Role / Device Role / Timing Role: Dual-cathode Schottky detector providing synchronous envelope extraction from I/Q downconverted signals. Use Value: 150 nA reverse leakage and 2.0 pF capacitance preserve pulse fidelity and minimize false-trigger risk in low-SNR environments. |
Use Scenario: Demodulating encrypted narrowband HF/VHF signals in manpack tactical radios subject to wide temperature swings. IC Role / Device Role / Timing Role: Common-anode clamp protecting ADC input stages from transient overvoltage during antenna coupling events. Use Value: JANTXV qualification ensures stable VF and VRWM across –65 °C to +150 °C, preventing clipping distortion in extreme field conditions. |
| Avionics Signal Conditioning | Spacecraft Telemetry Front-End |
Use Scenario: Level-shifting and DC restoration in analog video sync circuits within cockpit display units. IC Role / Device Role / Timing Role: Low-VF Schottky pair restoring black-level reference in composite video waveforms. Use Value: Matched VF (1.0 V @ 35 mA) and tight leakage tolerance enable <1% gain error across 10-year mission life. |
Use Scenario: RF sampling in S-band telemetry receivers aboard LEO satellites exposed to total ionizing dose >100 krad(Si). IC Role / Device Role / Timing Role: High-reliability detector converting downlinked carrier bursts into digital trigger events. Use Value: Ceramic hermetic seal and JANTXV screening prevent parametric drift under radiation, ensuring >99.99% data capture integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky detector applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N5712UBCC/TR | Common-cathode polarity instead of common-anode; identical electrical specs and package. | Requires inverted biasing topology - suitable for grounded-cathode clamp or single-ended detector layouts. | Select when circuit uses cathode-referenced signal paths or shares ground plane with multiple detectors. |
| JANTXV1N5711UBCA/TR | Higher 70 V V(BR) and 50 V VRWM, but lower 33 mA IO rating and 200 nA IR at rated VR. | Better suited for higher-voltage RF sampling (e.g., L-band radar), but less optimal for low-leakage, high-current detection. | Choose when reverse voltage margin >50 V is required and average current stays below 33 mA. |
Compared with JANTXV1N5712UBCA/TR, the JANTXV1N5711UBCA/TR offers greater reverse voltage headroom at the cost of higher leakage and lower current capacity, while the 1N5712UBCC/TR provides identical performance in a complementary polarity configuration - enabling layout flexibility without sacrificing reliability or RF response.
Availability
JANTXV1N5712UBCA/TR is available at Aetrix Electronics and suitable for radar pulse detection, secure communications receivers, and avionics signal conditioning requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for JANTXV1N5712UBCA/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTXV1N5712UBCA/TR belongs to Microsemi's military-qualified Schottky diode family, engineered specifically for RF detection, clamping, and sampling in mission-critical electronic systems where hermeticity and parameter stability are non-negotiable.
FAQ
What is the maximum operating temperature for JANTXV1N5712UBCA/TR?
JANTXV1N5712UBCA/TR is rated for junction and storage temperatures from –65 °C to +150 °C per MIL-PRF-19500/444. At +130 °C case temperature, its average rectified output current derates linearly to zero at +150 °C - a key constraint for thermal design in sealed avionics enclosures where forced air cooling is unavailable.
Is JANTXV1N5712UBCA/TR RoHS compliant?
Yes, JANTXV1N5712UBCA/TR is RoHS compliant by design - containing no lead, cadmium, mercury, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). This compliance is verified per Microsemi's internal material declarations and aligns with EU Directive 2011/65/EU Annex II exemptions for high-reliability military components.
What does "CA" signify in JANTXV1N5712UBCA/TR?
The "CA" suffix in JANTXV1N5712UBCA/TR denotes Common Anode polarity - indicating that both Schottky diodes share a single anode terminal (Pad 1), with independent cathodes on Pads 2 and 3. This configuration enables balanced signal processing in I/Q demodulators and differential clamping circuits without external component matching.
How does JANTXV1N5712UBCA/TR differ from commercial-grade 1N5712UB?
JANTXV1N5712UBCA/TR undergoes full MIL-PRF-19500/444 screening including extended burn-in, temperature cycling, and hermeticity testing - unlike commercial 1N5712UB. It also features tighter lot-to-lot parameter control, traceable lot documentation, and guaranteed performance across –65 °C to +150 °C, making it suitable for flight hardware where zero defect tolerance applies.
What is the thermal resistance of JANTXV1N5712UBCA/TR?
JANTXV1N5712UBCA/TR has a junction-to-solder-pad thermal resistance (RθJSP) of 100 °C/W, measured per MIL-STD-750 Method 1071. This value reflects heat transfer efficiency from the die to the PCB copper pad and directly impacts allowable power dissipation - for example, at 75 mA forward current and 1.0 V drop, 75 mW dissipation yields a 7.5 °C rise above pad temperature.
JANTXV1N5712UBCA/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io) (per Diode):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JANTXV1N5712UBCA/TR FAQ
1.How can I place an order for JANTXV1N5712UBCA/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5712UBCA/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5712UBCA/TR reliable?
The price and inventory of JANTXV1N5712UBCA/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5712UBCA/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N5712UBCA/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5712UBCA/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N5712UBCA/TR?
JANTXV1N5712UBCA/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5712UBCA/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5712UBCA/TR?
For technical support, including JANTXV1N5712UBCA/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5712UBCA/TR requirements.
6.How does Aetrix verify that JANTXV1N5712UBCA/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5712UBCA/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5712UBCA/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N5712UBCA/TR?
All JANTXV1N5712UBCA/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5712UBCA/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5712UBCA/TR part is unused and in its original packaging.
Return procedure for JANTXV1N5712UBCA/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N5712UBCA/TR Tags
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BAV99-7-F
Diodes Incorporated
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BAT54C-7-F
Diodes Incorporated
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BAV99,215
Nexperia USA Inc.
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BAT54SLT1G
onsemi
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BAV70LT1G
onsemi
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BAT54CLT1G
onsemi
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BAT54S-7-F
Diodes Incorporated
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BAV99LT1G
onsemi
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BAT54S,215
Nexperia USA Inc.
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BAS40-04LT1G
onsemi
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MMBD1503-TP
Micro Commercial Co
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BAV99WT1G
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