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Microchip Technology JANTXV1N5712UBD/TR
- Part No.:
- JANTXV1N5712UBD/TR
- Manufacturer:
- Microchip Technology
- Category:
- Diode Arrays
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JANTXV1N5712UBD/TR.pdf
- Description:
- DIODE ARRAY SCHOTTKY 16V 75MA UB
- Quantity:
- Payment:
- Shipping:
Inventory:9,318
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Product details
Overview
JANTXV1N5712UBD/TR from Microsemi is a ceramic-surface-mount Schottky barrier diode qualified to MIL-PRF-19500/444 at JANTXV level, with 16 V working peak reverse voltage, 1.0 V forward voltage at 35 mA, and maximum reverse leakage of 150 nA at 16 V - used in high-reliability RF detector and sample-and-hold circuits.
For engineers reviewing the JANTXV1N5712UBD/TR datasheet, JANTXV1N5712UBD/TR pinout, JANTXV1N5712UBD/TR application, or JANTXV1N5712UBD/TR equivalent, key selection criteria include military-grade temperature range (–65°C to +150°C), low-profile ceramic package, low reverse leakage, and compatibility with automated SMT assembly under EIA-418D tape-and-reel standards.
Technical Context
This device operates as a unidirectional Schottky rectifier with gold-plated nickel terminals and a ceramic case, optimized for low-noise, high-speed switching in analog signal conditioning. Its 100 ps minority carrier lifetime enables fast recovery with negligible stored charge, supporting operation in RF demodulation and precision clamping.
The JANTXV1N5712UBD/TR is rated for 75 mA average rectified output current at +130°C case temperature, derating linearly to zero at +150°C, and exhibits 2.0 pF junction capacitance at 0 V - critical for minimizing signal distortion in broadband detector applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 16 V - defines maximum continuous reverse-bias voltage before significant leakage or breakdown in detector or clamp circuits |
| VF @ IF | 1.0 V @ 35 mA - ensures low forward conduction loss in low-power sampling paths |
| IR @ VR | 150 nA @ 16 V - enables high-impedance signal integrity in precision analog front-ends |
| CT @ 0 V | 2.0 pF - minimizes capacitive loading on RF input nodes up to UHF frequencies |
| TJ Range | –65°C to +150°C - supports operation in aerospace, downhole, and military avionics environments |
| RθJSP | 100°C/W - allows thermal design margin when mounted on standard solder pads without heatsinking |
Pinout & Package
Ceramic surface-mount UB package (DO-213AA equivalent), 2-terminal device with gold-plated nickel metallization; dimensions: 2.92–3.25 mm length × 2.16–2.74 mm width × 1.17–1.42 mm height; weight ≈ 0.04 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to signal source or bias rail in detector/clamp configurations |
| Cathode | Forward current exit point / reverse voltage reference | Typically tied to ground or reference node; determines polarity of rectification |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JANTXV qualification | Guarantees screening, testing, and traceability for space- and defense-critical systems |
| Low reverse leakage (150 nA @ 16 V) | Preserves DC accuracy in sample-and-hold and peak-detect circuits over temperature |
| 100 ps minority carrier lifetime | Enables sub-nanosecond switching with minimal reverse recovery tail in RF envelope detection |
| Ceramic DO-213AA package | Provides hermeticity, thermal stability, and compatibility with high-reliability reflow profiles |
Applications
| RF Detector Circuit | Precision Sample-and-Hold |
|---|---|
Use Scenario: Demodulating AM/FM signals in airborne communication receivers operating from –55°C to +125°C. IC Role / Device Role / Timing Role: Unidirectional Schottky rectifier converting RF envelope to baseband DC voltage. Use Value: 2.0 pF capacitance and 150 nA leakage maintain signal fidelity across 10 MHz–1 GHz band without calibration drift. | Use Scenario: Capturing transient analog sensor outputs in radiation-hardened data acquisition modules. IC Role / Device Role / Timing Role: Low-leakage hold capacitor discharge prevention diode in feedback path. Use Value: Sub-200 nA reverse current at 16 V prevents droop during 100 ms hold intervals in extended-temperature missions. |
| High-Temperature Power Monitor | Military Grade Clamping Network |
Use Scenario: Monitoring supply rail integrity in engine control units exposed to sustained 130°C ambient. IC Role / Device Role / Timing Role: Input protection rectifier in isolated voltage sensing circuitry. Use Value: 75 mA IO rating at +130°C and 100°C/W thermal resistance enable direct PCB mounting without thermal relief. | Use Scenario: Protecting ADC inputs against ESD and overvoltage transients in tactical radios. IC Role / Device Role / Timing Role: Fast-turn-on clamp limiting input swing to ±1.0 V above/below rail. Use Value: 1.0 V VF at 35 mA ensures clamping threshold remains stable across military temperature extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5711UBD/TR | Higher VRWM (50 V), lower IO (33 mA), same VF/IR/CT specs | Better suited for higher-voltage detector stages; less current drive capability | Select when reverse voltage exceeds 16 V but current demand stays ≤33 mA |
| SM120A-TR | Commercial-grade SOD-123, 20 V VRWM, 120 mA IO, 500 nA IR @ 20 V | Lacks MIL qualification, higher leakage, larger footprint | Acceptable for non-military industrial designs where cost and volume outweigh reliability requirements |
Compared with JANTXV1N5712UBD/TR, JANTXV1N5711UBD/TR offers higher voltage tolerance but reduced current capacity, while SM120A-TR trades military reliability for higher current and commercial cost structure - making JANTXV1N5712UBD/TR optimal for mid-voltage, high-stability RF signal paths requiring full JANTXV traceability.
Availability
JANTXV1N5712UBD/TR is available at Aetrix Electronics and suitable for RF detector circuits, precision sample-and-hold systems, and high-temperature power monitoring applications requiring stable component supply across extended lifecycle programs.
Supply support for JANTXV1N5712UBD/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The 1N5712UB series belongs to Microsemi's legacy military-qualified Schottky diode product line, engineered specifically for low-leakage, high-speed signal routing in mission-critical analog subsystems.
FAQ
What is the maximum average rectified output current for JANTXV1N5712UBD/TR?
JANTXV1N5712UBD/TR is rated for 75 mA average rectified output current at +130°C case temperature, with linear derating to zero at +150°C. This specification assumes a 50/60 Hz sine-wave input and 180° conduction angle. The current rating reflects its use in low-duty-cycle signal-path applications rather than continuous power rectification.
Is JANTXV1N5712UBD/TR RoHS compliant?
Yes, JANTXV1N5712UBD/TR is RoHS compliant by design per the original Microsemi documentation. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), meeting EU Directive 2011/65/EU requirements for hazardous substances.
What does the 'D' suffix indicate in JANTXV1N5712UBD/TR?
The 'D' suffix in JANTXV1N5712UBD/TR denotes Doubler configuration - meaning the device integrates two Schottky die in a single ceramic package configured as a voltage doubler. This differs from unidirectional (blank), common-anode (CA), or common-cathode (CC) variants, enabling compact AC-to-DC conversion in space-constrained RF modules.
What is the thermal resistance junction-to-solder pad for JANTXV1N5712UBD/TR?
JANTXV1N5712UBD/TR has a thermal resistance of 100°C/W from junction to solder pad (RθJSP). This value applies to standard PCB mounting with recommended pad layout per Microsemi's package drawing and supports thermal management without additional heatsinking in most high-reliability analog applications.
Does JANTXV1N5712UBD/TR require special ESD handling?
Yes, JANTXV1N5712UBD/TR is ESD-sensitive to Class 1 (≤250 V HBM), as stated in the official Microsemi datasheet. Handling requires grounded workstations, ionized air, and static-dissipative packaging - especially critical during SMT placement and post-reflow inspection in high-reliability manufacturing lines.
JANTXV1N5712UBD/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Series Connection
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io) (per Diode):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Operating Temperature - Junction:
- -65°C ~ 150°C
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
JANTXV1N5712UBD/TR FAQ
1.How can I place an order for JANTXV1N5712UBD/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5712UBD/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5712UBD/TR reliable?
The price and inventory of JANTXV1N5712UBD/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5712UBD/TR is usually 5 days.
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JANTXV1N5712UBD/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5712UBD/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5712UBD/TR?
For technical support, including JANTXV1N5712UBD/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5712UBD/TR requirements.
6.How does Aetrix verify that JANTXV1N5712UBD/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5712UBD/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5712UBD/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N5712UBD/TR?
All JANTXV1N5712UBD/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5712UBD/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5712UBD/TR part is unused and in its original packaging.
Return procedure for JANTXV1N5712UBD/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N5712UBD/TR Tags
-
BAV99-7-F
Diodes Incorporated
-
BAT54C-7-F
Diodes Incorporated
-
BAV99,215
Nexperia USA Inc.
-
BAT54SLT1G
onsemi
-
BAV70LT1G
onsemi
-
BAT54CLT1G
onsemi
-
BAT54S-7-F
Diodes Incorporated
-
BAV99LT1G
onsemi
-
BAT54S,215
Nexperia USA Inc.
-
BAS40-04LT1G
onsemi
-
MMBD1503-TP
Micro Commercial Co
-
BAV99WT1G
onsemi
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