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Microchip Technology JANTXV1N5712UB/TR
- Part No.:
- JANTXV1N5712UB/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- 3-SMD, No Lead
- Datasheet:
-
JANTXV1N5712UB/TR.pdf
- Description:
- SMALL-SIGNAL SCHOTTKY
- Quantity:
- Payment:
- Shipping:
Inventory:2,482
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Product details
Overview
JANTXV1N5712UB/TR from Microsemi is a military-qualified ceramic surface-mount Schottky barrier diode with 20 V breakdown voltage, 1.0 V forward voltage at 35 mA, 16 V working peak reverse voltage, 150 nA reverse leakage at 16 V, and 2.0 pF capacitance at 0 V - used in high-reliability RF detector and sample-and-hold circuits.
For engineers reviewing the JANTXV1N5712UB/TR datasheet, JANTXV1N5712UB/TR pinout, JANTXV1N5712UB/TR application, or JANTXV1N5712UB/TR equivalent, key selection criteria include low reverse leakage (≤150 nA), fast switching (τ = 100 ps), ceramic hermetic packaging, MIL-PRF-19500/444 JANTXV qualification, and compatibility with 150 °C junction temperature operation.
Technical Context
This device implements a unidirectional Schottky barrier structure optimized for low-voltage, low-leakage signal rectification in aerospace and defense electronics. Its 100 ps minority carrier lifetime enables sub-nanosecond recovery, while gold-plated ceramic terminals ensure stable interconnect performance across thermal cycling.
The JANTXV1N5712UB/TR operates within a -65 °C to +150 °C junction temperature range and exhibits 100 °C/W thermal resistance from junction to solder pad - critical for power-limited surface-mount deployments where thermal dissipation must be modeled precisely without heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage V(BR) | 20 V minimum at 10 µA - defines maximum non-destructive reverse bias before avalanche conduction. |
| Working Peak Reverse Voltage VRWM | 16 V - maximum continuous reverse voltage usable in circuit design without exceeding reliability limits. |
| Forward Voltage VF | 1.0 V at 35 mA - determines forward conduction loss and self-heating under rated output current. |
| Reverse Leakage IR | 150 nA at 16 V - sets minimum detectable signal level in precision RF detector applications. |
| Capacitance CT | 2.0 pF at 0 V, 1 MHz - directly impacts high-frequency impedance matching and bandwidth in mixer/detector stages. |
| Junction Temperature Range | -65 °C to +150 °C - supports operation in extended-environment avionics and space-qualified systems. |
| Thermal Resistance RθJSP | 100 °C/W - enables thermal modeling of junction rise above PCB solder pad under pulsed or DC load conditions. |
Pinout & Package
Ceramic surface-mount package (UB) with two terminals: base-mounted anode and cathode pads on a hermetically sealed ceramic substrate. Gold-plated nickel terminations ensure solderability and corrosion resistance per MIL-STD-750.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pad 1 | Anode | Primary forward current entry point; connected to internal Schottky junction anode region. |
| Pad 2 | Cathode | Primary forward current exit point; bonded to cathode metallization layer of Schottky structure. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/444 JANTXV qualification | Validated screening including burn-in, temperature cycling, and hermeticity testing for Class V reliability in mission-critical systems. |
| Low reverse leakage (150 nA @ 16 V) | Enables accurate DC restoration and minimal signal distortion in RF envelope detection circuits. |
| 100 ps minority carrier lifetime (τ) | Supports >1 GHz small-signal rectification with negligible stored charge delay in sampling gates. |
| Ceramic hermetic enclosure | Prevents moisture ingress and parameter drift over 20+ year field life in humid or corrosive environments. |
| Gold-plated nickel terminations | Ensures repeatable solder joint integrity during reflow and long-term mechanical stability under vibration stress. |
Applications
| Radar Receiver Front-End | Avionics Signal Conditioning |
|---|---|
Use Scenario: RF envelope detection in X-band pulse radar receivers requiring nanosecond response and minimal baseline drift. IC Role / Device Role / Timing Role: Unidirectional Schottky detector diode converting RF pulses to baseband video signals. Use Value: 150 nA reverse leakage and 100 ps τ enable clean pulse capture with <1% amplitude error at 10 ns pulse widths. | Use Scenario: Precision DC restoration in analog video sync circuits within flight display systems operating at -55 °C to +125 °C. IC Role / Device Role / Timing Role: Low-leakage clamp diode maintaining black-level reference during horizontal blanking intervals. Use Value: Stable 2.0 pF capacitance and -65 °C to +150 °C operation prevent timing skew across extreme temperature excursions. |
| Satellite Telemetry Demodulation | Military Secure Comms Receivers |
Use Scenario: Coherent demodulation of L-band telemetry carriers in low-power CubeSat transceivers with strict ESD sensitivity control. IC Role / Device Role / Timing Role: Sample-and-hold front-end diode in synchronous detector architecture. Use Value: Class 1 ESD sensitivity rating and ceramic hermeticity ensure survivability during handling and launch vibration without parameter shift. | Use Scenario: Fast AGC control loop rectifier in HF/VHF secure voice receivers deployed in mobile command shelters. IC Role / Device Role / Timing Role: Low-VF signal rectifier generating control voltage for variable-gain amplifier stages. Use Value: 1.0 V VF at 35 mA minimizes AGC settling time and improves dynamic range compression accuracy under varying signal strength. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky detector diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5711UB/TR | Higher V(BR) = 70 V, lower IO = 33 mA, same package and τ = 100 ps | Better suited for higher-voltage RF sampling; less optimal for low-voltage, high-current detector stages | Select when VRWM > 50 V required and leakage ≤200 nA remains acceptable |
| SM1N5712US | Commercial-grade, plastic-molded DO-213AA package; identical electrical specs except no MIL qualification | Lacks hermetic seal and MIL screening; unsuitable for space or long-life sealed systems | Use only in cost-sensitive, non-mission-critical ground-based equipment with full thermal derating |
Compared with JANTXV1N5712UB/TR, JANTXV1N5711UB/TR offers higher reverse standoff but reduced current capability, while SM1N5712US sacrifices military reliability for lower cost and commercial availability - neither is pin-compatible due to differing ceramic vs plastic package footprints and terminal geometry.
Availability
JANTXV1N5712UB/TR is available at Aetrix Electronics and suitable for radar front-ends, avionics signal conditioning, and satellite telemetry demodulation requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for JANTXV1N5712UB/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTXV1N5712UB/TR belongs to Microsemi's legacy military Schottky diode family engineered specifically for RF detection, sampling, and clamping in harsh-environment electronics where hermeticity, radiation tolerance, and long-term parametric stability are mandatory.
FAQ
What is the maximum average rectified output current for JANTXV1N5712UB/TR?
The JANTXV1N5712UB/TR has a maximum average rectified output current (IO) of 75 mA at 25 °C. At elevated temperatures, this rating derates linearly: at TEC and TSP = +130 °C, IO drops to zero at +150 °C. This derating behavior must be applied in thermal design for sustained DC or high-duty-cycle pulsed operation.
Is JANTXV1N5712UB/TR RoHS compliant?
Yes, JANTXV1N5712UB/TR is RoHS compliant by design per the manufacturer's documentation. It contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE) above threshold limits, meeting EU Directive 2011/65/EU requirements for hazardous substances.
What does the "UB" suffix indicate in JANTXV1N5712UB/TR?
The "UB" suffix in JANTXV1N5712UB/TR denotes the ceramic surface-mount package variant per Microsemi's nomenclature. It distinguishes this hermetically sealed, gold-plated ceramic device from axial DO-35 ("-1") and plastic DO-213AA ("UR-1") versions - all sharing identical electrical characteristics but differing in mechanical construction and reliability grade.
Does JANTXV1N5712UB/TR have ESD sensitivity, and if so, what class?
Yes, JANTXV1N5712UB/TR is ESD sensitive to Class 1 per ANSI/ESD S20.20, meaning it can be damaged by electrostatic discharges as low as 0–1999 V. Handling requires grounded workstations, ionized air, and static-dissipative packaging - especially critical given its use in low-leakage RF detector applications where parameter shifts degrade system sensitivity.
What is the thermal resistance from junction to solder pad for JANTXV1N5712UB/TR?
The thermal resistance from junction to solder pad (RθJSP) for JANTXV1N5712UB/TR is 100 °C/W. This value enables direct calculation of junction temperature rise above the PCB pad temperature under known power dissipation, supporting thermal validation in compact, convection-cooled military assemblies without forced airflow or heatsinks.
JANTXV1N5712UB/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- 3-SMD, No Lead
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 16 V
- Current - Average Rectified (Io):
- 75mA
- Voltage - Forward (Vf) (Max) @ If:
- 1 V @ 35 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 150 nA @ 16 V
- Capacitance @ Vr, F:
- 2pF @ 0V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/444
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- UB
- Operating Temperature - Junction:
- -65°C ~ 150°C
JANTXV1N5712UB/TR FAQ
1.How can I place an order for JANTXV1N5712UB/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5712UB/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5712UB/TR reliable?
The price and inventory of JANTXV1N5712UB/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5712UB/TR is usually 5 days.
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4.How is shipping managed for JANTXV1N5712UB/TR?
JANTXV1N5712UB/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5712UB/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5712UB/TR?
For technical support, including JANTXV1N5712UB/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5712UB/TR requirements.
6.How does Aetrix verify that JANTXV1N5712UB/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5712UB/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5712UB/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N5712UB/TR?
All JANTXV1N5712UB/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5712UB/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5712UB/TR part is unused and in its original packaging.
Return procedure for JANTXV1N5712UB/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N5712UB/TR Tags
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1N4448X-TP
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