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Microchip Technology JANTXV1N5802URS/TR
- Part No.:
- JANTXV1N5802URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JANTXV1N5802URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:6,060
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Product details
Overview
JANTXV1N5802URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) hermetic package, rated at 2.5 A average forward current (at TEC = 75 °C), 50 V working peak reverse voltage (VRWM), and 25 ns reverse recovery time (trr), used in high-reliability switching power supplies and radiation-hardened systems.
For engineers reviewing the JANTXV1N5802URS/TR datasheet, JANTXV1N5802URS/TR pinout, JANTXV1N5802URS/TR application, or JANTXV1N5802URS/TR equivalent, key selection criteria include ultrafast trr ≤ 25 ns, hermetic voidless glass construction, MIL-PRF-19500/477 JANTXV qualification, and thermal resistance RθJEC = 13 °C/W for high-surge, low-loss DC output stages.
Technical Context
This device implements an ultrafast recovery PN junction rectifier with quadruple-layer passivation and internal Category 1 metallurgical bonds, enabling controlled avalanche capability up to 175 W peak reverse power and stable operation across −65 °C to +175 °C junction temperature range.
Its URS package features tungsten slugs and tin/lead terminations, delivering low thermal resistance (RθJEC = 13 °C/W) and high forward surge current (IFSM = 35 A, 8.3 ms), making it suitable for transient-heavy aerospace DC-DC converters where reliability under thermal cycling and radiation exposure is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 50 V - Maximum continuous reverse voltage before breakdown; defines safe operating limit in DC bus clamping and flyback snubbers. |
| IO1 | 2.5 A @ TEC = 75 °C - Sustained rectified current with end-cap heatsinking; enables compact 24–48 V SMPS outputs without forced air. |
| trr | 25 ns - Ultrafast recovery minimizes switching losses and EMI in >100 kHz converters; measured at IF = 0.5 A, IR(REC) = 0.05 A. |
| VF | 0.875 V @ IF = 1.0 A - Low forward drop reduces conduction loss and improves efficiency in high-current paths. |
| RθJEC | 13 °C/W - Junction-to-end-cap thermal resistance supports direct mounting to metal chassis or heat spreaders for passive thermal management. |
| IFSM | 35 A (8.3 ms) - Withstands repetitive line surges and inrush currents without degradation; validated per MIL-PRF-19500/477. |
| C | 25 pF @ 10 V, 1 MHz - Low junction capacitance limits displacement current and improves high-frequency noise immunity. |
Pinout & Package
Package: Hermetically sealed voidless glass URS (one square end cap, one round end cap), 193 mg weight, cathode indicated by color band. Dimensions: L = 0.168–0.200 in, BD = 0.091–0.103 in, ECT = 0.019–0.028 in.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input side of bridge or transformer secondary; must handle 35 A surge without bond wire failure. |
| Cathode | Forward current exit / reverse blocking terminal | Banded end; carries full output current and sustains 50 V reverse bias with <1 µA leakage at 125 °C. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination, ensuring >20-year operational life in vacuum or humid space environments. |
| Category 1 metallurgical bond | Provides mechanical robustness against shock/vibration and thermal cycling from −65 °C to +175 °C without interfacial failure. |
| Controlled avalanche capability | Enables safe energy dissipation during inductive turn-off transients without destructive breakdown (peak reverse power = 175 W). |
| Inherent radiation hardness | Validated per MicroNote 050; no parameter shift after 100 krad(Si) total ionizing dose, supporting satellite power subsystems. |
Applications
| Avionics Power Conversion | Satellite DC-DC Regulators |
|---|---|
Use Scenario: Rectifying 28 V aircraft bus-derived AC in auxiliary power units with strict EMI and surge requirements. IC Role / Device Role / Timing Role: Ultrafast output rectifier in forward converter topology, replacing slower 1N540x series to reduce switching loss and improve efficiency. Use Value: 25 ns trr cuts turn-off loss by >40% vs. standard fast recovery diodes, lowering thermal stress on adjacent MOSFETs. | Use Scenario: Output stage in radiation-tolerant 5 V/3.3 V point-of-load converters onboard LEO satellites. IC Role / Device Role / Timing Role: Primary DC rectifier handling 2.5 A continuous load with zero maintenance interval and guaranteed lifetime performance. Use Value: Hermetic URS package and Category 1 bond ensure no parametric drift after 100 krad(Si), eliminating need for derating or redundancy. |
| Military Vehicle DC Systems | High-Reliability Industrial UPS |
Use Scenario: Input rectification in 24 V diesel-generator-fed battery chargers exposed to wide ambient temperature swings (−40 °C to +85 °C). IC Role / Device Role / Timing Role: High-surge-capable rectifier absorbing repeated 35 A engine cranking transients without failure. Use Value: 35 A IFSM rating and −65 °C to +175 °C TJ range enable operation without external surge suppressors or thermal throttling. | Use Scenario: Critical backup power rectification in hospital-grade UPS where single-point failure is unacceptable. IC Role / Device Role / Timing Role: MIL-qualified primary rectifier in dual-redundant AC/DC front ends meeting MIL-HDBK-217F reliability targets. Use Value: JANTXV qualification and RoHS-compliant commercial variants allow seamless transition between defense and medical supply chains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5802US | Same die, US package (two square end caps); RθJEC = 13 °C/W identical, but lower mechanical robustness in vibration-prone mounts. | Preferred for PCB-mounted designs with symmetric pad layout; less suitable for chassis-mounting with asymmetric thermal paths. | Select JANTXV1N5802US only when board-level symmetry and automated placement compatibility outweigh mechanical ruggedness needs. |
| CDP1N5802TR | Commercial-grade, non-hermetic plastic package; trr = 25 ns and VRWM = 50 V match, but TJ limited to +150 °C and no MIL qualification. | Acceptable for industrial SMPS where cost and volume matter more than radiation tolerance or 175 °C operation. | Choose CDP1N5802TR only for non-mission-critical applications with full lifecycle traceability and no requirement for MIL-PRF-19500 compliance. |
Compared with JANTXV1N5802US and CDP1N5802TR, the JANTXV1N5802URS/TR uniquely combines hermetic URS mechanical stability, full JANTXV qualification, and 175 °C operation-making it the sole option for chassis-mounted, radiation-exposed, or extended-temperature military power systems.
Availability
JANTXV1N5802URS/TR is available at Aetrix Electronics and suitable for avionics power conversion, satellite DC-DC regulators, and military vehicle DC systems requiring stable component supply under extended temperature and radiation constraints.
Supply support for JANTXV1N5802URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified analog and discrete components.
The JANTXV1N5802URS/TR belongs to Microsemi's ultrafast hermetic rectifier product line, engineered specifically for mission-critical aerospace, defense, and space applications demanding zero-failure operation under extreme environmental stress.
FAQ
What is the maximum junction temperature rating for JANTXV1N5802URS/TR?
The JANTXV1N5802URS/TR has a specified junction and storage temperature range of −65 °C to +175 °C per MIL-PRF-19500/477. This allows uninterrupted operation in spacecraft thermal vacuum chambers and jet engine bay environments where ambient extremes exceed commercial-grade limits. The JANTXV1N5802URS/TR maintains parameter stability across this full range when mounted with appropriate thermal interface.
Does JANTXV1N5802URS/TR have RoHS-compliant versions?
No-RoHS-compliant terminations are available only on commercial-grade versions (e.g., 1N5802URS) per the datasheet. The JANTXV1N5802URS/TR retains traditional tin/lead (Sn/Pb) terminations to meet MIL-PRF-19500/477 solderability and reliability requirements, including resistance to tin whisker formation under thermal cycling.
How does the URS package differ mechanically from the US package in JANTXV1N5802URS/TR?
The URS package of JANTXV1N5802URS/TR features one square and one round end cap, enabling asymmetric thermal mounting-such as attaching the square end to a heatsink while leaving the round end free for strain relief. In contrast, the US variant uses two square end caps, limiting mounting flexibility and increasing mechanical stress under differential expansion. Both share identical electrical specs.
What is the reverse recovery time test condition for JANTXV1N5802URS/TR?
The reverse recovery time (trr) of 25 ns for JANTXV1N5802URS/TR is measured under standardized conditions: forward current IF = 0.5 A, reverse current IRM = 0.5 A, and recovery current threshold IR(REC) = 0.05 A. These conditions reflect real-world switching behavior in hard-commutated DC-DC topologies and are verified per MIL-PRF-19500/477 test methods.
Is JANTXV1N5802URS/TR qualified for space applications?
Yes-JANTXV1N5802URS/TR is inherently radiation-hardened per Microsemi MicroNote 050 and qualified to MIL-PRF-19500/477 JANTXV level, which includes screening for space-use suitability. Its hermetic voidless glass construction, Category 1 metallurgical bonds, and 100 krad(Si) TID tolerance make it suitable for LEO and MEO satellite power systems without additional radiation testing.
JANTXV1N5802URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 50 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTXV1N5802URS/TR FAQ
1.How can I place an order for JANTXV1N5802URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5802URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5802URS/TR reliable?
The price and inventory of JANTXV1N5802URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5802URS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N5802URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5802URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N5802URS/TR?
JANTXV1N5802URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5802URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5802URS/TR?
For technical support, including JANTXV1N5802URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5802URS/TR requirements.
6.How does Aetrix verify that JANTXV1N5802URS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5802URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5802URS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N5802URS/TR?
All JANTXV1N5802URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5802URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5802URS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N5802URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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