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Microchip Technology JANTXV1N5804URS/TR
- Part No.:
- JANTXV1N5804URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JANTXV1N5804URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:3,095
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Product details
Overview
JANTXV1N5804URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode with 100 V working peak reverse voltage, 2.5 A average rectified output current at TEC = +75 °C, and 25 ns reverse recovery time. It features voidless hermetic glass packaging, Category 1 metallurgical bonding, and is used in high-reliability switching power supplies and radiation-hardened aerospace systems.
For engineers reviewing the JANTXV1N5804URS/TR datasheet, JANTXV1N5804URS/TR pinout, JANTXV1N5804URS/TR application, or JANTXV1N5804URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 JANTXV qualification, 13 °C/W junction-to-end-cap thermal resistance, controlled avalanche capability, and URS (one square + one round end cap) surface-mount MELF-style package.
Technical Context
This device operates as a unidirectional power rectifier optimized for fast switching in high-reliability DC-DC conversion stages. Its 25 ns reverse recovery time and low forward voltage (0.875 V at 1.0 A) minimize switching losses and conduction loss simultaneously under transient load conditions.
The URS package uses tungsten slugs and tin/lead terminations with cathode polarity indicated by a band. Thermal performance is defined by RθJEC = 13 °C/W and ZθJX = 4.0 °C/W at tH = 10 ms, supporting stable operation up to +175 °C junction temperature in constrained thermal environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 100 V - Maximum sustainable reverse voltage across full operating temperature range (-65 to +175 °C) |
| IO1 | 2.5 A @ TEC = +75 °C - Continuous rectified current rating with end-cap heatsinking |
| trr | 25 ns - Time to recover from forward conduction to 5% of peak reverse current; enables >1 MHz switching |
| VF | 0.875 V @ IF = 1.0 A - Low conduction loss improves efficiency in high-current, low-voltage outputs |
| RθJEC | 13 °C/W - Junction-to-end-cap thermal resistance supports direct mounting to metal chassis or heat spreaders |
| C | 25 pF @ VR = 10 V, f = 1 MHz - Low junction capacitance reduces high-frequency noise coupling |
| IFSM | 35 A - Non-repetitive surge current handling for line transients and startup inrush |
Pinout & Package
The JANTXV1N5804URS/TR uses the URS package: a surface-mount, voidless hermetically sealed hard glass case with one square and one round end cap (per ASME Y14.5M), tungsten slugs, and Sn/Pb-plated copper terminations. Cathode is marked by a color band on the glass body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input source or transformer secondary; must withstand 35 A surge and 100 V reverse bias |
| Cathode | Forward current exit point | Marked by color band; connects to output filter capacitor or load return; defines polarity in bridge or flyback configurations |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination, enabling 30+ year field life in vacuum/space environments |
| Category 1 metallurgical bond | Guarantees mechanical integrity under shock/vibration per MIL-STD-883, critical for launch and orbital deployment |
| Controlled avalanche capability | Supports safe energy dissipation during inductive turn-off without destructive breakdown |
| Quadruple-layer passivation | Prevents surface leakage and ion migration under high humidity and radiation exposure |
| Inherent radiation hardness | Validated per MicroNote 050 for total ionizing dose (TID) > 100 krad(Si), suitable for LEO/MEO missions |
Applications
| Spacecraft Power Distribution | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: Rectification in satellite bus DC-DC converters feeding payload electronics and attitude control systems. IC Role / Device Role / Timing Role: Ultrafast power rectifier in synchronous or diode-based buck-derived topologies. Use Value: 25 ns trr and 100 V VRWM enable efficient 200–500 kHz operation with minimal EMI generation in EMI-sensitive RF payloads. | Use Scenario: High-reliability AC/DC front-end rectification in pulsed radar modulator power supplies. IC Role / Device Role / Timing Role: Primary rectifier handling repetitive 35 A surges during magnetron pulse charging. Use Value: 35 A IFSM and controlled avalanche behavior prevent catastrophic failure during high-dV/dt switching events. |
| Aerospace Avionics DC-DC Modules | Nuclear Instrumentation Systems |
Use Scenario: Input rectification in compact, conduction-cooled avionics power modules operating at -55 to +125 °C ambient. IC Role / Device Role / Timing Role: Hermetically sealed rectifier mounted directly to aluminum chassis for thermal management. Use Value: RθJEC = 13 °C/W and TJ max = +175 °C allow full 2.5 A output without forced air, reducing system weight and complexity. | Use Scenario: Signal conditioning and power isolation in radiation monitoring detectors deployed near reactors or accelerators. IC Role / Device Role / Timing Role: Radiation-hardened rectifier in HV bias supply and low-noise analog front-end protection circuits. Use Value: Inherent TID hardness (>100 krad) and low 25 pF capacitance preserve signal integrity and long-term calibration stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VMI JANTXV1N5804US | Same die, US package (two square end caps); RθJEC = 12 °C/W; identical electrical specs | Requires different PCB pad layout due to dual-square geometry; slightly lower thermal resistance | Select when board space allows US footprint and marginally better thermal performance is needed |
| Microchip 1N5804US-TR | Commercial-grade, non-military qualified; same VF, trr, VRWM; RoHS-compliant matte tin finish | Lacks MIL-PRF-19500/477 qualification; not rated for space or nuclear environments | Select only for cost-sensitive industrial prototypes where radiation hardness and extended temperature compliance are not required |
Compared with JANTXV1N5804URS/TR, the JANTXV1N5804US offers marginally improved thermal resistance but requires layout change, while the 1N5804US-TR sacrifices military qualification for RoHS compliance and lower cost-neither is pin-compatible, but both serve overlapping ultrafast rectification functions in distinct reliability tiers.
Availability
JANTXV1N5804URS/TR is available at Aetrix Electronics and suitable for spacecraft power distribution, military radar transmitter supplies, aerospace avionics DC-DC modules, and nuclear instrumentation systems requiring stable component supply across extended product lifecycles.
Supply support for JANTXV1N5804URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTXV1N5804URS/TR belongs to Microsemi's military-qualified ultrafast rectifier family, engineered specifically for mission-critical power conversion where failure is not an option-including launch vehicles, satellites, and hardened ground systems.
FAQ
What is the maximum junction temperature rating for JANTXV1N5804URS/TR?
The JANTXV1N5804URS/TR has a maximum junction temperature (TJ) of +175 °C and a storage temperature range of -65 to +175 °C. This rating is validated under MIL-PRF-19500/477 JANTXV stress conditions and supports operation in extreme thermal environments such as engine-mounted avionics or space vehicle power busses. Derating begins above +125 °C for continuous use, maintaining reliability over decades in orbit or battlefield deployments. The JANTXV1N5804URS/TR achieves this via voidless glass sealing and Category 1 metallurgical bonds.
Is JANTXV1N5804URS/TR RoHS compliant?
No, the JANTXV1N5804URS/TR is not RoHS compliant-it uses traditional tin/lead (Sn/Pb) terminations per MIL-PRF-19500/477 requirements for solderability and intermetallic stability under thermal cycling. RoHS-compliant versions (e3 suffix) are available only in commercial-grade variants like 1N5804US-TR, not in JANTXV-level parts. The JANTXV1N5804URS/TR maintains legacy Pb-based finishes to ensure proven reliability in high-reliability solder joints subjected to shock, vibration, and wide temperature excursions.
What does "URS" signify in JANTXV1N5804URS/TR?
"URS" denotes the package configuration: one square end cap and one round end cap, distinguishing it from the "US" variant (two square end caps). This geometry affects PCB pad layout, thermal path symmetry, and mechanical mounting orientation. The JANTXV1N5804URS/TR's URS construction is specified in Microsemi's T4-LDS-0211-1 datasheet and aligns with MIL-PRF-19500/477 mechanical standards for hermetic surface-mount rectifiers. It ensures consistent thermal contact when mounted on asymmetric heatsinks or chassis surfaces.
How does the reverse recovery time of JANTXV1N5804URS/TR impact switching power supply design?
The JANTXV1N5804URS/TR's 25 ns reverse recovery time (trr) enables clean commutation in high-frequency switching topologies (e.g., 200–1000 kHz) without excessive ringing or shoot-through risk. This directly reduces EMI filter size, improves efficiency above 85%, and lowers diode-induced losses in synchronous rectifier auxiliary paths. In designs using the JANTXV1N5804URS/TR, designers can achieve tighter duty-cycle control and faster transient response-critical for radar modulators and satellite bus regulators where power density and reliability are paramount.
Can JANTXV1N5804URS/TR replace JANTXV1N5804US in an existing design?
JANTXV1N5804URS/TR cannot be directly substituted for JANTXV1N5804US without PCB layout revision: the URS package has one square and one round end cap, while US has two square end caps-resulting in different pad dimensions and centerline spacing. Though electrically identical (same VRWM, trr, VF, IFSM), thermal resistance differs slightly (13 vs. 12 °C/W), and mechanical fitment is incompatible. Replacing JANTXV1N5804US with JANTXV1N5804URS/TR requires updated stencil, footprint, and reflow profile validation. The JANTXV1N5804URS/TR is not a drop-in replacement.
JANTXV1N5804URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 100 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTXV1N5804URS/TR FAQ
1.How can I place an order for JANTXV1N5804URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5804URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5804URS/TR reliable?
The price and inventory of JANTXV1N5804URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5804URS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N5804URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5804URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N5804URS/TR?
JANTXV1N5804URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5804URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5804URS/TR?
For technical support, including JANTXV1N5804URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5804URS/TR requirements.
6.How does Aetrix verify that JANTXV1N5804URS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5804URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5804URS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N5804URS/TR?
All JANTXV1N5804URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5804URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5804URS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N5804URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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