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Microchip Technology JANTXV1N5806URS/TR
- Part No.:
- JANTXV1N5806URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, A
- Datasheet:
-
JANTXV1N5806URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:8,194
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Product details
Overview
JANTXV1N5806URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) hermetic MELF-style package, rated for 150 V working peak reverse voltage, 2.5 A average forward current at TEC = 75 °C, and 25 ns reverse recovery time - deployed in high-reliability DC/DC converters and radiation-hardened power supplies.
For engineers reviewing the JANTXV1N5806URS/TR datasheet, JANTXV1N5806URS/TR pinout, JANTXV1N5806URS/TR application, or JANTXV1N5806URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 JANTXV qualification, voidless glass hermetic seal, Category 1 metallurgical bond, and controlled avalanche capability under transient reverse stress.
Technical Context
This device operates as a unidirectional power rectifier with ultrafast switching behavior enabled by low minority-carrier lifetime design and optimized junction geometry. Its 25 ns reverse recovery time (measured at IF = 0.5 A, IR(REC) = 0.05 A) supports high-frequency operation up to ~1 MHz in hard-switched topologies.
The URS package features tungsten slugs and tin/lead terminations, delivering 13 °C/W junction-to-end-cap thermal resistance and enabling 35 A non-repetitive forward surge current handling. Its hermetic voidless glass construction ensures long-term reliability under thermal cycling and humidity exposure per MIL-STD-750.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage | 150 V - maximum continuous reverse bias before breakdown under full operating temperature range (-65 °C to +175 °C) |
| Average Forward Current | 2.5 A @ TEC = 75 °C - sustained DC output current capability with end-cap heatsinking |
| Reverse Recovery Time | 25 ns - enables efficient operation in SMPS designs switching above 200 kHz without excessive switching loss |
| Forward Voltage | 0.975 V @ IF = 2.5 A - low conduction loss critical for high-efficiency power conversion stages |
| Surge Current | 35 A (8.3 ms, 10×) - withstands inrush and fault currents in aerospace power distribution systems |
| Junction Temperature Range | -65 °C to +175 °C - supports operation in extreme environments including space and jet engine bays |
| Thermal Resistance (J-to-EC) | 13 °C/W - allows direct mounting to metal chassis or heat spreaders for passive thermal management |
Pinout & Package
Package: URS (hermetically sealed voidless glass, one square end cap + one round end cap, 193 mg mass, cathode indicated by color band). Dimensions: L = 0.168–0.200 in, BD = 0.091–0.103 in, ECT = 0.019–0.028 in.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Positive input terminal | Accepts incoming DC or rectified AC; bonded to tungsten slug for low-inductance, high-current path |
| Cathode | Output terminal / polarity reference | Marked by color band; connects to load or filter capacitor; designed for controlled avalanche during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture ingress and delamination risk - certified for 20+ year field life in vacuum and high-humidity environments |
| Category 1 metallurgical bond | Ensures mechanical integrity under shock/vibration >100 g and thermal cycling from -65 °C to +175 °C without bond fatigue |
| Controlled avalanche capability | Withstands peak reverse power surges up to 175 W (per datasheet note) without catastrophic failure |
| Quadruple-layer passivation | Provides surface stability against ion migration and surface leakage in high-bias, high-radiation conditions |
| MIL-PRF-19500/477 JANTXV qualification | Validated for use in Class H (spaceflight) and Class B (military airborne) applications with full lot traceability |
Applications
| Avionics Power Distribution | Satellite DC/DC Converters |
|---|---|
Use Scenario: Rectification of 28 V DC bus-derived auxiliary supplies in flight control electronics. IC Role / Device Role / Timing Role: Ultrafast power rectifier in secondary-side synchronous or diode-based buck converters. Use Value: 25 ns trr minimizes dead-time losses and enables stable regulation at 500 kHz switching frequency. |
Use Scenario: Input rectification in radiation-tolerant 28 V to 5 V isolated converters on LEO satellite payloads. IC Role / Device Role / Timing Role: Primary unidirectional power switch with inherent single-event burnout (SEB) immunity. Use Value: Hermetic glass package and Category 1 bond ensure zero parametric drift after 100 krad(Si) total ionizing dose exposure. |
| Tactical Vehicle Power Systems | Nuclear Instrumentation Front Ends |
Use Scenario: Engine-start surge protection and battery-isolation rectification in armored vehicle 24 V systems. IC Role / Device Role / Timing Role: High-surge-capability freewheeling diode across solenoid drivers and motor controllers. Use Value: 35 A IFSM rating handles cranking transients without degradation; low RθJEC prevents thermal runaway during repeated duty cycles. |
Use Scenario: Signal conditioning and HV bias supply rectification in neutron/gamma detector front-end modules. IC Role / Device Role / Timing Role: Low-noise, low-leakage rectifier in precision charge-integration paths. Use Value: <1 µA reverse leakage at 150 V and 125 °C ensures sub-picoamp baseline stability in low-current measurement circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VMI JANTXV1N5806US | Same die, US package (two square end caps); 15 °C/W RθJEC, 30 ns trr max | Lower thermal resistance but slightly slower recovery; preferred where PCB pad area limits URS mounting | Select JANTXV1N5806US when board-level thermal management favors dual-square footprint and 5 ns trr margin is acceptable |
| ON Semiconductor MUR260G | Commercial-grade, TO-220AC package; 600 V VRWM, 2.0 A IO, 35 ns trr, no MIL qual | Higher voltage rating but lower reliability assurance; not suitable for space or Class H avionics | Choose MUR260G only for cost-sensitive industrial prototypes where MIL-PRF-19500 compliance is not required |
Compared with JANTXV1N5806URS/TR, the JANTXV1N5806US offers better thermal performance in constrained layouts, while the MUR260G trades qualification and hermeticity for higher voltage headroom and commercial availability - neither is pin-compatible, and both require layout review for mechanical fit and thermal path redesign.
Availability
JANTXV1N5806URS/TR is available at Aetrix Electronics and suitable for avionics power distribution, satellite DC/DC converters, and tactical vehicle power systems requiring stable component supply across extended production lifecycles.
Supply support for JANTXV1N5806URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.
The JANTXV1N5806URS/TR belongs to Microsemi's military-qualified ultrafast rectifier family, engineered specifically for mission-critical power conversion where failure is not an option - emphasizing hermeticity, radiation tolerance, and transient robustness.
FAQ
What is the maximum junction temperature rating for JANTXV1N5806URS/TR?
The JANTXV1N5806URS/TR has a specified junction and storage temperature range of -65 °C to +175 °C. This rating is validated per MIL-PRF-19500/477 and confirmed in the T4-LDS-0211-1 datasheet. Operation at +175 °C requires strict thermal design to maintain junction temperature within limit, leveraging its 13 °C/W RθJEC and end-cap mounting.
Does JANTXV1N5806URS/TR support RoHS compliance?
No - JANTXV1N5806URS/TR uses tin/lead (Sn/Pb) terminations and is not RoHS compliant. RoHS-compliant versions (e3 suffix) are available only in commercial-grade variants (e.g., 1N5806URS), not in JANTXV-qualified parts. The JANTXV1N5806URS/TR maintains legacy solder compatibility for legacy military repair and sustainment programs.
How is the cathode identified on JANTXV1N5806URS/TR?
The cathode of JANTXV1N5806URS/TR is marked by a color band on the glass body, as defined in the package drawing and confirmed in the "Mechanical and Packaging" section of T4-LDS-0211-1. This band aligns with standard diode polarity convention and is visible regardless of mounting orientation due to the URS end-cap asymmetry.
What is the reverse recovery time test condition for JANTXV1N5806URS/TR?
The reverse recovery time (trr) of 25 ns for JANTXV1N5806URS/TR is measured under the conditions: IF = 0.5 A, IRM = 0.5 A, and IR(REC) = 0.05 A, as specified in Note 2 of the Electrical Characteristics table in T4-LDS-0211-1. This is a maximum-rated parameter, not typical.
Is JANTXV1N5806URS/TR suitable for avalanche energy absorption?
Yes - JANTXV1N5806URS/TR is characterized for controlled avalanche operation, with a peak reverse power capability of 175 W (per datasheet note). Its design includes junction geometry and passivation that enable repeatable, non-destructive avalanche clamping during transient overvoltage events, supporting use in snubberless or lightly clamped topologies.
JANTXV1N5806URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, A
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 150 V
- Current - Average Rectified (Io):
- 1A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 1 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 25 ns
- Current - Reverse Leakage @ Vr:
- 1 µA @ 150 V
- Capacitance @ Vr, F:
- 25pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5A
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTXV1N5806URS/TR FAQ
1.How can I place an order for JANTXV1N5806URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5806URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5806URS/TR reliable?
The price and inventory of JANTXV1N5806URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5806URS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N5806URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5806URS/TR transactions.
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4.How is shipping managed for JANTXV1N5806URS/TR?
JANTXV1N5806URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5806URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5806URS/TR?
For technical support, including JANTXV1N5806URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5806URS/TR requirements.
6.How does Aetrix verify that JANTXV1N5806URS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5806URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5806URS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N5806URS/TR?
All JANTXV1N5806URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5806URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5806URS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N5806URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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