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Microchip Technology JANTXV1N5807URS/TR
- Part No.:
- JANTXV1N5807URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTXV1N5807URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:8,950
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Product details
Overview
JANTXV1N5807URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) MELF package, rated for 6.0 A average forward current at 75 °C, 50 V working peak reverse voltage, and 30 ns reverse recovery time-used in high-reliability switching power supplies and radiation-hardened systems.
For engineers reviewing the JANTXV1N5807URS/TR datasheet, JANTXV1N5807URS/TR pinout, JANTXV1N5807URS/TR application, or JANTXV1N5807URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 JANTXV qualification, void-less hermetic glass construction, Category 1 metallurgical bond, and 125 A surge current capability under defined test conditions.
Technical Context
This device operates as a unidirectional silicon power rectifier with ultrafast recovery characteristics enabled by optimized carrier lifetime control and low-junction-capacitance design. Its 30 ns trr (measured at IF = 1.0 A, IRM = 1.0 A, di/dt ≥ 100 A/µs) supports high-frequency switching up to ~10 MHz in DC-DC converters and EMI-sensitive applications.
The URS package features tungsten slugs and tin/lead terminations, delivering 6.5 °C/W junction-to-end-cap thermal resistance and enabling stable operation from –65 °C to +175 °C. Its controlled avalanche behavior and 525 V breakdown voltage provide robust transient overvoltage tolerance beyond VRWM.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 50 V - Maximum continuous reverse voltage without breakdown across full operating temperature range |
| IO1 @ TL=75°C | 6.0 A - Sustained average forward current with 3/8″ lead length and end-cap temperature held at 75 °C |
| trr | 30 ns - Time from forward-to-reverse current zero-crossing to 10% of peak reverse recovery current |
| VFM @ 4 A | 0.875 V - Forward voltage drop limiting conduction loss in high-current switching paths |
| IFSM | 125 A - Non-repetitive surge current handling for line transients or startup inrush |
| RθJEC | 6.5 °C/W - Thermal resistance from junction to end-cap, critical for heatsink interface design |
| CJ @ 10 V | 60 pF - Junction capacitance affecting high-frequency switching noise and snubber sizing |
Pinout & Package
Package: URS (Ultrafast Recovery Surface-mount) MELF variant with one square and one round end cap, hermetically sealed void-less glass body, blue-coated marking, cathode indicated by band, tin/lead terminations, weight 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (square end cap) | Forward current entry point | Connects to input source or transformer secondary; must accommodate 125 A surge and 6 A steady-state |
| Cathode (round end cap, banded) | Forward current exit / reverse blocking terminal | Connects to output filter or load; withstands 50 V VRWM and exhibits controlled avalanche at 525 V |
Key Features
| Feature | Design Value |
|---|---|
| Void-less hermetic glass seal | Eliminates moisture ingress and internal delamination, ensuring long-term reliability in vacuum or humid environments |
| Category 1 metallurgical bond | Provides mechanical integrity and thermal stability under thermal cycling and shock per MIL-STD-750 |
| JANTXV qualification | Meets MIL-PRF-19500/477 screening including burn-in, temperature cycling, and life testing for space-grade use |
| Quadruple-layer passivation | Reduces surface leakage and enhances stability of reverse characteristics at high temperature and humidity |
| Inherent radiation hardness | Validated per MicroNote 050 for total ionizing dose (TID) tolerance in space radiation environments |
Applications
| Space Power Converters | Military Radar Transmitters |
|---|---|
Use Scenario: DC-DC conversion in satellite bus power distribution units requiring >15-year operational life in orbit. IC Role / Device Role / Timing Role: Ultrafast rectifier in synchronous buck-derived topologies operating at 200–500 kHz. Use Value: 30 ns trr minimizes switching losses; hermetic seal prevents parametric drift in vacuum; JANTXV screening ensures mission-critical uptime. | Use Scenario: Pulse-forming network (PFN) charging and discharge clamping in airborne radar modulators. IC Role / Device Role / Timing Role: High-surge rectifier handling repetitive 125 A pulses with fast turn-off to prevent transformer saturation. Use Value: 125 A IFSM and controlled avalanche enable reliable energy transfer without external snubbers. |
| Avionics Switch-Mode PSUs | Nuclear Instrumentation Systems |
Use Scenario: Primary rectification in certified airborne power supplies where failure modes are strictly fault-tree analyzed. IC Role / Device Role / Timing Role: Input-stage rectifier in 28 V DC-fed SMPS with strict EMI and thermal derating requirements. Use Value: Low VF (0.875 V @ 4 A) reduces conduction loss; 6.5 °C/W RθJEC simplifies thermal management on constrained PCBs. | Use Scenario: Signal conditioning and bias supply rectification in reactor monitoring electronics exposed to neutron/gamma fields. IC Role / Device Role / Timing Role: Radiation-tolerant front-end rectifier in high-voltage detector bias chains. Use Value: Inherent radiation hardness per MicroNote 050 eliminates need for shielding or derating; 175 °C max TJ supports high-ambient operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Vishay VS-12CWQ04FNTR-M3 | 45 V VRWM, 12 A IO, Schottky architecture, 3 V reverse leakage at 45 V vs. <1 µA for JANTXV1N5807URS/TR | Lower VF (~0.45 V), but no avalanche rating or MIL qualification; unsuitable for radiation or high-reliability contexts | Select only for commercial high-efficiency, low-voltage (<45 V) applications where qualification and surge margin are not required |
| ON Semiconductor MUR1620CTG | 200 V VRWM, 16 A IO, TO-220AB package, 60 ns trr, non-hermetic plastic encapsulation | Higher voltage/current rating but lacks hermeticity, MIL screening, and radiation tolerance; larger footprint and higher thermal resistance | Use where cost, volume, and higher VRWM outweigh need for space/military qualification and ultrafast timing |
Compared with VS-12CWQ04FNTR-M3 and MUR1620CTG, JANTXV1N5807URS/TR uniquely combines MIL-PRF-19500/477 JANTXV qualification, void-less hermetic packaging, 30 ns trr, and radiation hardness-making it irreplaceable in safety-critical, space, or nuclear environments despite lower current rating.
Availability
JANTXV1N5807URS/TR is available at Aetrix Electronics and suitable for space power converters, military radar transmitters, avionics switch-mode PSUs, and nuclear instrumentation systems requiring stable component supply, long-lifecycle support, and traceable military-grade sourcing.
Supply support for JANTXV1N5807URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and MIL-spec components.
The JANTXV1N5807URS/TR belongs to Microsemi's ultrafast recovery rectifier family engineered specifically for mission-critical power conversion where failure is not an option-targeting space, nuclear, and tactical systems demanding hermeticity, screening, and parametric stability.
FAQ
What is the maximum junction temperature rating for JANTXV1N5807URS/TR?
JANTXV1N5807URS/TR has a maximum junction temperature (TJ) rating of +175 °C and a storage temperature range of –65 °C to +175 °C. This wide operating envelope enables deployment in extreme environments such as spacecraft power systems and engine-mounted avionics. The device's thermal resistance junction-to-end-cap is 6.5 °C/W, allowing effective heat extraction when mounted to a thermally conductive surface. JANTXV1N5807URS/TR maintains specified electrical parameters across this full range when properly derated.
Is JANTXV1N5807URS/TR RoHS compliant?
No, JANTXV1N5807URS/TR is not RoHS compliant. It uses tin/lead (Sn/Pb) terminations as required for military-grade reliability and solder joint integrity under thermal cycling stress. RoHS-compliant versions are available only for commercial-grade variants (e.g., 1N5807US with e3 suffix), not for JANTXV-level parts. JANTXV1N5807URS/TR complies with MIL-PRF-19500/477 screening and is intended for applications where performance and reliability supersede RoHS requirements.
What does "URS" signify in JANTXV1N5807URS/TR?
"URS" denotes the package configuration: Ultrafast Recovery Surface-mount with one square end cap and one round end cap, distinguishing it from "US" (two square end caps). This geometry optimizes mechanical stability and thermal path symmetry in automated placement. The URS variant is explicitly referenced in Microsemi's T4-LDS-0168-1 datasheet and is qualified for JANTXV level. JANTXV1N5807URS/TR uses this exact form factor with hermetic void-less glass construction and tungsten slugs.
How is JANTXV1N5807URS/TR screened for military reliability?
JANTXV1N5807URS/TR undergoes full MIL-PRF-19500/477 Level JANTXV screening, including extended burn-in, temperature cycling (–65 °C to +175 °C), steady-state life testing, and parameter verification across extremes. It also meets Category 1 metallurgical bond standards and quadruple-layer passivation. These tests ensure performance stability in launch vibration, orbital vacuum, and battlefield thermal shock-critical for JANTXV1N5807URS/TR deployment in systems where field failure is unacceptable.
What is the reverse recovery time test condition for JANTXV1N5807URS/TR?
The reverse recovery time (trr) of 30 ns for JANTXV1N5807URS/TR is measured under standardized conditions: IF = 1.0 A forward current, IRM = 1.0 A peak reverse current, IR(REC) = 0.10 A recovery current threshold, and di/dt ≥ 100 A/µs. These conditions reflect real-world switching behavior in high-frequency power converters. JANTXV1N5807URS/TR maintains this trr value across its qualified temperature range, supporting clean commutation in radar modulators and satellite DC-DC stages.
JANTXV1N5807URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 50 V
- Capacitance @ Vr, F:
- 60pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTXV1N5807URS/TR FAQ
1.How can I place an order for JANTXV1N5807URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5807URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5807URS/TR reliable?
The price and inventory of JANTXV1N5807URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5807URS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N5807URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5807URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N5807URS/TR?
JANTXV1N5807URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5807URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5807URS/TR?
For technical support, including JANTXV1N5807URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5807URS/TR requirements.
6.How does Aetrix verify that JANTXV1N5807URS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5807URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5807URS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N5807URS/TR?
All JANTXV1N5807URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5807URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5807URS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N5807URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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