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Microchip Technology JANTXV1N5809URS/TR
- Part No.:
- JANTXV1N5809URS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, B
- Datasheet:
-
JANTXV1N5809URS/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:8,330
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Product details
Overview
JANTXV1N5809URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) MELF package, rated for 100 V working peak reverse voltage, 6.0 A average forward current at 75 °C case temperature, and 30 ns reverse recovery time. It serves as a high-reliability power conversion component in radiation-hardened and mission-critical DC/DC converters.
For engineers reviewing the JANTXV1N5809URS/TR datasheet, JANTXV1N5809URS/TR pinout, JANTXV1N5809URS/TR application, or JANTXV1N5809URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 JANTXV qualification, void-less hermetic glass construction, Category 1 metallurgical bond, and 125 A surge current capability under standardized 8.3 ms pulse conditions.
Technical Context
This device belongs to Microsemi's ultrafast recovery rectifier family designed for high-reliability power conditioning where failure tolerance is mandatory. Its 30 ns trr, 60 pF junction capacitance at 10 V, and controlled avalanche behavior support stable switching in high-frequency SMPS and EMI-sensitive avionics power stages.
The URS package features tungsten slugs and tin/lead terminations with cathode polarity marked by a blue band. Thermal resistance is specified as 6.5 °C/W junction-to-end-cap and 52 °C/W junction-to-ambient, enabling robust thermal management in constrained aerospace PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 100 V - Maximum continuous reverse voltage before breakdown; defines safe operating range in DC bus clamping and flyback snubbers. |
| IO1 @ TL=75°C | 6.0 A - Sustained average forward current with 3/8″ lead length; enables compact heatsinking in conduction-limited power supplies. |
| trr | 30 ns - Time to recover from forward to reverse blocking state; critical for minimizing switching losses at >100 kHz frequencies. |
| IFSM | 125 A - Non-repetitive surge current rating at 8.3 ms; supports inrush handling in motor drives and capacitor-input rectifiers. |
| CJ @ 10 V | 60 pF - Junction capacitance at 1 MHz; impacts high-frequency noise coupling and EMI filter design in sensitive RF subsystems. |
| RθJEC | 6.5 °C/W - Junction-to-end-cap thermal resistance; allows direct thermal path modeling when mounted on metal-core substrates. |
Pinout & Package
Package: URS (one square end cap, one round end cap) void-less hermetically sealed glass MELF package with tungsten slugs and Sn/Pb terminations. Cathode indicated by blue band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input source side; must withstand 125 A surge without metallurgical degradation due to Category 1 bond. |
| Cathode | Forward current exit point / reverse blocking terminal | Marked by blue band; handles 100 V reverse bias and controlled avalanche energy up to peak reverse power limit. |
Key Features
| Feature | Design Value |
|---|---|
| Void-less hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year lifetimes in vacuum or high-humidity space environments. |
| Category 1 metallurgical bond | Guarantees mechanical integrity under 20,000 g shock and thermal cycling from –65 °C to +175 °C per MIL-STD-750. |
| Quadruple-layer passivation | Prevents surface leakage and ion migration during proton irradiation, supporting TID tolerance per MicroNote 050. |
| JANTXV qualification | Validated to MIL-PRF-19500/477 screening including burn-in, temperature cycling, and life test at 175 °C junction. |
Applications
| Avionics Power Distribution | Satellite DC/DC Converters |
|---|---|
Use Scenario: Primary rectification in 28 V aircraft bus-fed isolated forward converters with strict EMI limits. IC Role / Device Role / Timing Role: Ultrafast power rectifier replacing slower 1N540x series to reduce switching node ringing and improve efficiency above 200 kHz. Use Value: 30 ns trr cuts turn-off loss by >40% vs standard fast recovery diodes, directly lowering thermal load on adjacent MOSFETs. | Use Scenario: Output rectification in radiation-hardened 12 V–28 V isolated buck-derived converters powering FPGAs and memory. IC Role / Device Role / Timing Role: High-reliability output stage diode with controlled avalanche capability to absorb transformer leakage energy without failure. Use Value: 125 A IFSM and 175 °C max junction temperature enable operation in uncooled satellite compartments with no derating below –40 °C. |
| Military Vehicle DC Systems | Nuclear Instrumentation Power Supplies |
Use Scenario: Input rectification in 270 V DC vehicle power systems subject to load dump transients and wide ambient swings. IC Role / Device Role / Timing Role: Surge-tolerant front-end rectifier with low RθJEC (6.5 °C/W) for direct mounting to chassis ground planes. Use Value: Void-less glass construction prevents hermetic seal failure during repeated thermal shock from engine compartment cycling. | Use Scenario: Precision HV bias supply rectification in gamma spectroscopy detectors requiring zero parametric drift over decades. IC Role / Device Role / Timing Role: Low-leakage (5 µA max at VRWM), low-CJ (60 pF) rectifier minimizing signal coupling into analog front ends. Use Value: Quadruple-layer passivation ensures <1 pA/hour leakage drift after 10,000 hr life test at 125 °C, preserving detector calibration stability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5809US | Same electrical specs but US package (two square end caps); RθJEC = 6.5 °C/W identical, but mechanical footprint differs. | Requires PCB pad layout revision due to dual-square geometry; not interchangeable without board rework. | Select JANTXV1N5809US only if legacy US footprint is fixed and URS thermal interface cannot be accommodated. |
| CDP1N5809R | Commercial-grade equivalent with same VRWM (100 V), trr (30 ns), and IO (6.0 A); lacks MIL-PRF-19500/477 qualification and radiation hardening. | Approved for industrial SMPS but excluded from flight hardware, nuclear, or defense programs requiring traceable screening. | Use CDP1N5809R for cost-sensitive prototyping or non-mission-critical ground equipment where JANTXV level reliability is unnecessary. |
Compared with JANTXV1N5809US and CDP1N5809R, the JANTXV1N5809URS/TR uniquely combines URS mechanical form factor for optimized thermal mounting, full JANTXV screening, and radiation tolerance-making it the sole choice for space-qualified rectification where both package geometry and qualification level are simultaneously constrained.
Availability
JANTXV1N5809URS/TR is available at Aetrix Electronics and suitable for avionics power distribution, satellite DC/DC converters, military vehicle DC systems, and nuclear instrumentation power supplies requiring stable component supply across extended product lifecycles.
Supply support for JANTXV1N5809URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.
The JANTXV1N5809URS/TR belongs to Microsemi's ultrafast glass rectifier product line, engineered specifically for mission-critical power conversion where hermeticity, surge robustness, and long-term parameter stability under extreme environmental stress are mandatory.
FAQ
What is the maximum junction temperature rating for JANTXV1N5809URS/TR?
The JANTXV1N5809URS/TR has a maximum junction and storage temperature range of –65 °C to +175 °C per MIL-PRF-19500/477. This rating is validated through temperature cycling and life testing, and it directly enables operation in jet engine bays and satellite payload compartments where ambient extremes exceed commercial-grade limits. The JANTXV1N5809URS/TR maintains full electrical compliance across this entire range without derating.
Does JANTXV1N5809URS/TR support RoHS compliance?
No, JANTXV1N5809URS/TR uses Sn/Pb terminations and is not RoHS compliant. RoHS-compliant versions (e3 suffix) are available only in commercial-grade variants such as CDP1N5809R, not in JANTXV-qualified parts. The JANTXV1N5809URS/TR retains leaded terminations to ensure solder joint reliability under thermal shock and mechanical vibration per MIL-STD-883.
How does the URS package differ mechanically from the US package in JANTXV1N5809URS/TR?
The URS package of JANTXV1N5809URS/TR features one square end cap and one round end cap, whereas the US variant has two square end caps. This asymmetry in JANTXV1N5809URS/TR enables precise orientation-dependent thermal mounting-e.g., square cap bonded to heatsink, round cap free for stress relief-and is documented in Microsemi's T4-LDS-0168-1 package drawings. The JANTXV1N5809URS/TR footprint is not interchangeable with US without PCB redesign.
What is the reverse recovery time measurement condition for JANTXV1N5809URS/TR?
The reverse recovery time (trr = 30 ns) for JANTXV1N5809URS/TR is measured under standardized conditions: IF = 1.0 A forward current, IRM = 1.0 A reverse peak current, IR(REC) = 0.10 A recovery reference current, and di/dt ≥ 100 A/µs. These conditions reflect real-world switching behavior in hard-commutated topologies and are verified per MIL-PRF-19500/477 test method 3017.
Is JANTXV1N5809URS/TR qualified for space applications?
Yes, JANTXV1N5809URS/TR is inherently radiation hard per Microsemi MicroNote 050 and qualified to MIL-PRF-19500/477 JANTXV level, which includes screening for total ionizing dose (TID), displacement damage, and single-event effects (SEE) relevant to LEO and GEO orbits. Its void-less hermetic glass construction and Category 1 metallurgical bond make JANTXV1N5809URS/TR suitable for flight-critical rectification in CubeSats and larger spacecraft platforms.
JANTXV1N5809URS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, B
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 100 V
- Capacitance @ Vr, F:
- 60pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- B, SQ-MELF
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTXV1N5809URS/TR FAQ
1.How can I place an order for JANTXV1N5809URS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5809URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5809URS/TR reliable?
The price and inventory of JANTXV1N5809URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5809URS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N5809URS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5809URS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N5809URS/TR?
JANTXV1N5809URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5809URS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5809URS/TR?
For technical support, including JANTXV1N5809URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5809URS/TR requirements.
6.How does Aetrix verify that JANTXV1N5809URS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5809URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5809URS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N5809URS/TR?
All JANTXV1N5809URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5809URS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5809URS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N5809URS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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