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Microchip Technology JANTXV1N5811URS/TR

Part No.:
JANTXV1N5811URS/TR
Manufacturer:
Microchip Technology
Category:
Single Diodes
Package:
SQ-MELF, B
Datasheet:
AetrixJANTXV1N5811URS/TR.pdf
Description:
UFR,FRR
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,567

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Product details

Overview

JANTXV1N5811URS/TR from Microsemi is a military-qualified ultrafast recovery glass rectifier diode in URS (one square + one round end cap) MELF package, rated for 150 V working peak reverse voltage, 6.0 A average rectified current at 75 °C case temperature, and 30 ns reverse recovery time. It serves as a high-reliability power conversion component in radiation-hardened DC-DC converters and avionics power supplies.

For engineers reviewing the JANTXV1N5811URS/TR datasheet, JANTXV1N5811URS/TR pinout, JANTXV1N5811URS/TR application, or JANTXV1N5811URS/TR equivalent, key selection criteria include its MIL-PRF-19500/477 JANTXV qualification, void-less hermetic glass construction, Category 1 metallurgical bond, and 125 A surge current capability under standardized 8.3 ms pulse conditions.

Technical Context

This device belongs to Microsemi's ultrafast recovery rectifier family designed for high-reliability power conversion where failure tolerance is critical. Its internal tungsten slug construction and quadruple-layer passivation ensure robust thermal and mechanical stability across -65 °C to +175 °C junction temperature range.

The URS package configuration enables surface-mount assembly while maintaining hermetic sealing integrity. Reverse recovery time of 30 ns is measured under IF = 1.0 A, IRM = 1.0 A, IR(REC) = 0.10 A, and di/dt ≥ 100 A/µs - confirming suitability for high-frequency switching topologies requiring low switching loss.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM150 V - Maximum sustainable reverse voltage across full operating temperature range without breakdown.
IO1 @ TL=75 °C6.0 A - Continuous average forward current with 3/8″ lead length and controlled thermal path.
trr30 ns - Time required to transition from forward conduction to reverse blocking state under defined test conditions.
IFSM125 A - Peak non-repetitive surge current capability for ten 8.3 ms pulses at 1-minute intervals.
RθJEC6.5 °C/W - Junction-to-end-cap thermal resistance enabling precise thermal design in conduction-cooled layouts.
VFM @ 4 A0.875 V - Forward voltage drop at 4 A pulsed current, directly impacting conduction loss in power stages.
CJ @ 10 V60 pF - Junction capacitance at 1 MHz and 10 V reverse bias, influencing high-frequency switching behavior and EMI generation.

Pinout & Package

Package: URS-type MELF (one square end cap, one round end cap), hermetically sealed void-less hard glass with tungsten slugs; cathode indicated by blue band; weight 539 mg.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward current entry pointConnects to input side of rectification stage; must withstand 125 A surge transients.
CathodeForward current exit pointMarked by blue band; connects to output filter capacitor or load return; defines polarity in bridge configurations.

Key Features

FeatureDesign Value
Hermetic void-less glass sealPrevents moisture ingress and internal corrosion, ensuring long-term reliability in vacuum or humid environments.
Category 1 metallurgical bondGuarantees mechanical integrity under extreme thermal cycling and vibration stress per MIL-STD-750.
JANTXV qualificationFully tested to MIL-PRF-19500/477 requirements including burn-in, life test, and radiation hardness per MicroNote 050.
Quadruple-layer passivationEnhances surface insulation strength and suppresses leakage current drift over lifetime and temperature.

Applications

Avionics Power ConversionSatellite DC-DC Modules

Use Scenario: Primary rectification in 28 V input DC-DC converters powering flight control computers and inertial measurement units.

IC Role / Device Role / Timing Role: Ultrafast recovery rectifier handling 100–500 kHz switching frequencies with minimal reverse recovery loss.

Use Value: 30 ns trr and 6.0 A IO1 rating enable compact magnetics and reduced heatsink mass in SWaP-constrained platforms.

Use Scenario: Input rectification in radiation-tolerant isolated flyback converters supplying 5 V and 3.3 V rails to FPGA-based telemetry processors.

IC Role / Device Role / Timing Role: High-reliability power diode selected for inherent radiation hardness and guaranteed 175 °C junction operation.

Use Value: JANTXV qualification and Category 1 bond ensure mission-critical continuity during extended orbital exposure.

Military Radar Transmitter SuppliesHigh-Temperature Industrial SMPS

Use Scenario: Output rectification in pulsed modulator supplies delivering >1 kW peak power to magnetron or TWT drivers.

IC Role / Device Role / Timing Role: Surge-rated rectifier absorbing repetitive 125 A transient currents during RF pulse generation.

Use Value: 125 A IFSM and 6.5 °C/W RθJEC allow reliable operation without forced cooling in sealed chassis.

Use Scenario: Secondary-side rectification in oil-field downhole power supplies operating continuously at +150 °C ambient.

IC Role / Device Role / Timing Role: Hermetically sealed rectifier maintaining stable VF and IR performance across extended high-temperature soak.

Use Value: Void-less glass construction prevents delamination and parameter shift up to TJ = +175 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast rectifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
JANTXV1N5811USSame die, US package (two square end caps); RθJEC = 6.5 °C/W identical; identical electrical specs.Requires different PCB pad layout due to dual-square footprint; no change in thermal or electrical performance.Select JANTXV1N5811US only when legacy board design uses US footprint or tape-and-reel compatibility with existing pick-and-place feeders is required.
CDP15015Commercial-grade 150 V / 6 A ultrafast rectifier; trr = 35 ns; RθJEC = 8.0 °C/W; not MIL-qualified.Lacks JANTXV screening, radiation hardness, and hermetic seal; unsuitable for space or safety-critical systems.Consider CDP15015 only for cost-sensitive industrial prototypes where MIL-PRF-19500 compliance is not mandated.

Compared with JANTXV1N5811US and CDP15015, the JANTXV1N5811URS/TR uniquely combines JANTXV-level reliability screening, hermetic URS packaging for surface-mount robustness, and verified 30 ns recovery in a single qualified part - making it irreplaceable in flight-critical and radiation-exposed applications.

Availability

JANTXV1N5811URS/TR is available at Aetrix Electronics and suitable for avionics power conversion, satellite DC-DC modules, and military radar transmitter supplies requiring stable component supply across extended production lifecycles.

Supply support for JANTXV1N5811URS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.

The JANTXV1N5811URS/TR belongs to Microsemi's military-qualified ultrafast rectifier product line, engineered specifically for power conversion in mission-critical systems where hermeticity, radiation tolerance, and long-term parametric stability are mandatory.

FAQ

What is the maximum junction temperature rating for JANTXV1N5811URS/TR?

The JANTXV1N5811URS/TR has a specified junction and storage temperature range of -65 °C to +175 °C. This wide range supports operation in extreme environments such as spacecraft thermal vacuums and downhole oilfield equipment. The 175 °C upper limit is validated through MIL-PRF-19500/477 life testing and is integral to the JANTXV qualification of the JANTXV1N5811URS/TR.

Is JANTXV1N5811URS/TR RoHS compliant?

No, JANTXV1N5811URS/TR is not RoHS compliant. Per the datasheet, RoHS-compliant versions (marked e3) are available only for commercial-grade variants. The JANTXV1N5811URS/TR uses Sn/Pb terminations to meet MIL-PRF-19500/477 solderability and reliability requirements, and its qualification excludes lead-free processing.

How does the URS package differ mechanically from the US package in JANTXV1N5811URS/TR?

The URS package of JANTXV1N5811URS/TR features one square end cap and one round end cap, whereas the US variant has two square end caps. This difference affects PCB pad layout geometry and mechanical retention during reflow. Both packages share identical electrical characteristics, thermal resistance (RθJEC = 6.5 °C/W), and hermetic sealing - only the physical footprint differs for JANTXV1N5811URS/TR.

What test conditions define the 30 ns reverse recovery time for JANTXV1N5811URS/TR?

The 30 ns reverse recovery time (trr) for JANTXV1N5811URS/TR is measured under strictly defined conditions: IF = 1.0 A forward current, IRM = 1.0 A peak reverse current, IR(REC) = 0.10 A recovery reference current, and di/dt ≥ 100 A/µs. These conditions are standardized per MIL-PRF-19500/477 and ensure repeatable comparison across qualified ultrafast rectifiers including the JANTXV1N5811URS/TR.

Can JANTXV1N5811URS/TR be used in place of JANTXV1N5811US without board redesign?

No, JANTXV1N5811URS/TR cannot replace JANTXV1N5811US without board redesign. Although both share identical die and electrical specifications, the URS package (square + round end caps) requires different PCB pad dimensions than the US package (two square end caps). The JANTXV1N5811URS/TR footprint is incompatible with the JANTXV1N5811US land pattern per Microsemi's package drawings.

JANTXV1N5811URS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, B
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
150 V
Current - Average Rectified (Io):
3A
Voltage - Forward (Vf) (Max) @ If:
875 mV @ 4 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
30 ns
Current - Reverse Leakage @ Vr:
5 µA @ 150 V
Capacitance @ Vr, F:
60pF @ 10V, 1MHz
Grade:
Military
Qualification:
MIL-PRF-19500/477
Mounting Type:
Surface Mount
Supplier Device Package:
B, SQ-MELF
Operating Temperature - Junction:
-65°C ~ 175°C

JANTXV1N5811URS/TR FAQ

1.How can I place an order for JANTXV1N5811URS/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N5811URS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N5811URS/TR reliable?

The price and inventory of JANTXV1N5811URS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5811URS/TR is usually 5 days.

3.What payment methods are accepted for JANTXV1N5811URS/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5811URS/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTXV1N5811URS/TR?

JANTXV1N5811URS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N5811URS/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N5811URS/TR?

For technical support, including JANTXV1N5811URS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5811URS/TR requirements.

6.How does Aetrix verify that JANTXV1N5811URS/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N5811URS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5811URS/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N5811URS/TR?

All JANTXV1N5811URS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5811URS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N5811URS/TR part is unused and in its original packaging.

Return procedure for JANTXV1N5811URS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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