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Semtech Corporation JANTXV1N6462US
- Part No.:
- JANTXV1N6462US
- Manufacturer:
- Semtech Corporation
- Category:
- TVS Diodes
- Package:
- SQ-MELF
- Datasheet:
-
JANTXV1N6462US.pdf
- Description:
- T DAP UNI 500W 6V SM
- Quantity:
- Payment:
- Shipping:
Inventory:7,256
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Product details
Overview
JANTXV1N6462US from Microsemi (now Microchip) is a military-grade transient voltage suppression diode designed for high-reliability EOS/ESD protection of 22V DC power and signal lines. It features ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), 27.5–28V clamping at 40A, 20mΩ dynamic resistance, and 175pF junction capacitance - enabling robust protection in USB PD, industrial equipment, and ruggedized IoT interfaces.
For engineers reviewing the JANTXV1N6462US datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, DFN-6 package layout guidance, clamping stability across temperature, and direct alternatives for 22V bus protection in mission-critical designs.
Technical Context
JANTXV1N6462US implements a transient diverting suppressor architecture using a surge-rated FET as the primary shunt element, activated by a precision trigger circuit when voltage exceeds breakdown. Unlike conventional TVS diodes, its clamping voltage remains nearly constant (27.5–28V) from 24A to 40A and across −40°C to +125°C due to decreasing RDS(on) under surge conditions.
The device protects one unidirectional line with 22V working voltage (VRWM), 25–27.9V reverse breakdown (VBR at 1mA), and low 130–600nA leakage at VRWM. Its 1.6mm × 1.6mm × 0.55mm DFN-6 package integrates three parallel input terminals (pins 4–6) and three ground terminals (pins 1–3) to minimize parasitic inductance and maximize surge current handling.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Voltage | 22V - defines maximum continuous DC operating voltage on protected line without leakage degradation. |
| Clamping Voltage | 27.5–28V at 40A (8/20μs) - ensures downstream 24V-rated ICs (e.g., USB PD controllers) remain below damage threshold during surge. |
| Peak Pulse Current | 40A (8/20μs) - meets IEC 61000-4-5 Level 4 industrial surge immunity requirements for 22V systems. |
| ESD Withstand | ±30kV contact & air (IEC 61000-4-2) - provides immunity to human-body-model ESD events in field-deployed equipment. |
| Dynamic Resistance | 20mΩ - enables flat clamping response and minimizes voltage overshoot during fast-rising transients. |
| Junction Capacitance | 175pF at 22V, 1MHz - compatible with USB Type-C VBus protection where signal integrity is secondary to power-line robustness. |
Pinout & Package
Package: DFN-6 (1.6mm × 1.6mm × 0.55mm), RoHS-compliant, UL 94V-0 molding compound, lead-free finish, tape-and-reel packaging (3,000 units/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pins 1, 2, 3 | GND | Low-inductance ground return path; all three must be connected to PCB ground plane via multiple vias for full 40A surge capability. |
| Pins 4, 5, 6 | IN | Parallel-connected input terminals for protected line (e.g., USB PD VBus); single straight trace routing required for optimal ESD performance. |
Key Features
| Feature | Design Value |
|---|---|
| FET-based transient diversion | Replaces conventional TVS with active shunt FET, delivering stable clamping independent of surge amplitude or temperature. |
| Constant clamping over current range | 27.5–28V clamping from 24A to 40A (8/20μs), eliminating design margin inflation needed with traditional TVS devices. |
| Temperature-stable protection | Clamping voltage variation <0.5V across −40°C to +125°C - critical for industrial and automotive under-hood applications. |
| High-energy surge rating | 1120W peak pulse power (8/20μs) supports repeated lightning-induced surges in remote metering and robotics. |
Applications
| USB Type-C Power Delivery | Industrial Load Switch Input Protection |
|---|---|
Use Scenario: Protecting 20–22V VBus lines in USB-C ports supporting up to 100W power delivery against ESD and surge events. IC Role / Device Role / Timing Role: Primary EOS suppressor placed adjacent to connector, clamping transients before they reach PD controller or load switch. Use Value: Maintains 27.5–28V clamping at full 40A surge - well below 30V absolute maximum ratings of common PD controllers like TUSB73x or FUSB302. |
Use Scenario: Safeguarding input pins of industrial-grade load switches (e.g., HS2950P) exposed to lightning-induced surges in remote sensors and PLC I/O modules. IC Role / Device Role / Timing Role: Front-end transient shunt that limits voltage stress on internal FET gate oxide and drain-source junction during 1.2/50μs surges. Use Value: Prevents latch-up or permanent failure of load switches rated for ≤30V VIN, extending field reliability in harsh electromagnetic environments. |
| IoT Edge Node Power Bus | Robotic Actuator Control Interface |
Use Scenario: Securing 22V auxiliary power rails in battery-backed smart meters and wireless gateways subjected to EFT bursts and contact ESD. IC Role / Device Role / Timing Role: Single-component solution replacing multi-diode TVS arrays, reducing BOM count while improving clamping consistency. Use Value: ±4kV EFT immunity (IEC 61000-4-4) and 20mΩ dynamic resistance ensure reliable operation during repetitive 5/50ns burst noise in electrically noisy substations. |
Use Scenario: Protecting motor driver enable and fault-reporting lines in collaborative robots where 22V control buses interface with safety-critical motion controllers. IC Role / Device Role / Timing Role: Fast-acting shunt that diverts transient energy away from microcontroller GPIOs and isolated gate drivers. Use Value: 175pF capacitance avoids signal distortion on <1MHz control signals, while ±30kV ESD rating prevents firmware lockups caused by static discharge during maintenance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TDS2211P | Same functional architecture, identical 22V VRWM, 27.5–28V clamping, and DFN-6 package; commercial-grade (−40°C to +125°C) vs. JANTXV1N6462US's military screening (−55°C to +125°C). | Approved for commercial USB-C and industrial IoT; lacks MIL-PRF-19500 qualification and extended temperature testing. | Select when cost sensitivity outweighs need for military reliability screening and extended cold-start capability. |
| SMAJ22A | Standard unidirectional TVS diode; higher 35.5V clamping at 22.5A (8/20μs), 1.5× higher dynamic resistance (~30mΩ), and rising clamping with temperature. | Used in legacy 22V protection where flat clamping is not required; requires larger layout area and higher voltage margin on protected ICs. | Select only if existing design uses SMA package and cannot accommodate DFN-6 footprint or requires lower unit cost with relaxed clamping spec. |
Compared with TDS2211P and SMAJ22A, JANTXV1N6462US delivers military-grade reliability, tighter clamping stability across temperature, and superior surge endurance - making it optimal for defense, aerospace, and high-assurance industrial deployments where field failure is unacceptable.
Availability
JANTXV1N6462US is available at Aetrix Electronics and suitable for USB Type-C power delivery systems, industrial load switch inputs, and ruggedized IoT edge nodes requiring stable component supply with full MIL-PRF-19500 compliance and traceable lot history.
Supply support for JANTXV1N6462US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs for aerospace, defense, and industrial markets.
JANTXV1N6462US belongs to Microsemi's JAN/JANTX-series transient suppressors, engineered specifically for military and space applications demanding extended temperature operation, radiation tolerance, and rigorous screening per MIL-PRF-19500.
FAQ
What is the maximum continuous operating voltage for JANTXV1N6462US?
JANTXV1N6462US has a reverse stand-off voltage (VRWM) of 22V, meaning it can safely operate continuously at up to 22V DC on the protected line without significant leakage current. This makes JANTXV1N6462US ideal for protecting 20–22V USB PD VBus rails and industrial 24V nominal systems where sustained voltage stress must be managed without degradation.
How does JANTXV1N6462US differ from standard TVS diodes in clamping behavior?
Unlike standard TVS diodes whose clamping voltage rises linearly with peak pulse current (VC = VBR + IPP × RDYN), JANTXV1N6462US uses a surge-rated FET architecture that maintains near-constant clamping - 27.5–28V from 24A to 40A (8/20μs). This behavior is confirmed in the JANTXV1N6462US datasheet and eliminates the need for oversized voltage margins on protected ICs.
Is JANTXV1N6462US suitable for USB Type-C VBus protection in 100W applications?
Yes - JANTXV1N6462US is explicitly validated for USB Type-C VBus protection in 100W PD systems. Its 22V VRWM, 27.5–28V clamping at 40A, and ±30kV ESD rating meet the stringent requirements of USB PD 3.0 specifications, ensuring robust protection of controllers like the FUSB302B and TUSB7340 even under worst-case surge and ESD conditions.
What package type and PCB layout guidance applies to JANTXV1N6462US?
JANTXV1N6462US uses a 1.6mm × 1.6mm × 0.55mm DFN-6 package with pins 1–3 as GND and pins 4–6 as IN. Per the official layout guidelines, all three GND pins must connect to a solid ground plane via multiple vias, and all three IN pins must route through a single straight trace from the connector - minimizing inductance and maximizing surge current handling for JANTXV1N6462US.
Does JANTXV1N6462US require external components for basic operation?
No - JANTXV1N6462US is a fully self-contained transient suppressor requiring no external bias, timing, or control components. It operates passively: the integrated trigger circuit activates the internal shunt FET automatically when transient voltage exceeds breakdown, making JANTXV1N6462US a drop-in solution for board-level EOS protection without added complexity or bill-of-materials overhead.
JANTXV1N6462US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Package/Case:
- SQ-MELF
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 6V
- Voltage - Breakdown (Min):
- 6.5V
- Voltage - Clamping (Max) @ Ipp:
- 11V
- Current - Peak Pulse (10/1000µs):
- 46A
- Power - Peak Pulse:
- 500W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
JANTXV1N6462US FAQ
1.How can I place an order for JANTXV1N6462US through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6462US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6462US reliable?
The price and inventory of JANTXV1N6462US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6462US is usually 5 days.
3.What payment methods are accepted for JANTXV1N6462US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6462US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6462US?
JANTXV1N6462US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6462US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6462US?
For technical support, including JANTXV1N6462US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6462US requirements.
6.How does Aetrix verify that JANTXV1N6462US is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6462US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6462US meets industry standards.
7.What is the process for return or replacement of JANTXV1N6462US?
All JANTXV1N6462US units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6462US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6462US part is unused and in its original packaging.
Return procedure for JANTXV1N6462US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6462US Tags
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onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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