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Semtech Corporation JANTXV1N6475US
- Part No.:
- JANTXV1N6475US
- Manufacturer:
- Semtech Corporation
- Category:
- TVS Diodes
- Package:
- SQ-MELF
- Datasheet:
-
JANTXV1N6475US.pdf
- Description:
- DIODE ZENER T DAP 1500W
- Quantity:
- Payment:
- Shipping:
Inventory:6,155
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Product details
Overview
JANTXV1N6475US from Microsemi (now Microchip) is a military-grade transient voltage suppression diode designed for high-reliability EOS/ESD protection of 22V DC power and signal lines. It features ±30kV IEC 61000-4-2 ESD immunity, 40A peak pulse current (8/20μs), 27.5–28V clamping at 40A, 20mΩ dynamic resistance, and 175pF junction capacitance - enabling robust protection in USB PD, industrial IoT, and load switch input circuits.
For engineers reviewing the JANTXV1N6475US datasheet, pinout, applications, or equivalent options, this page delivers verified electrical parameters, DFN-6 package layout guidance, clamping stability across temperature, functional comparison with conventional TVS diodes, and OEM supply support for aerospace, defense, and ruggedized embedded systems.
Technical Context
JANTXV1N6475US implements a transient diverting architecture using a surge-rated FET as the primary shunt element, activated by a precision trigger circuit - unlike standard PN-junction TVS diodes. Its clamping voltage remains nearly constant (27.5–28V) from 24A to 40A and across −40°C to +125°C due to decreasing RDS(on) under surge conditions.
The device operates with a 22V reverse stand-off voltage (VRWM) and 25–27.9V breakdown (VBR), supports unsymmetrical line protection per IEC 61000-4-5 (±1kV, 1.2/50μs), and delivers 1120W peak pulse power. Its 175pF capacitance at 22V/1MHz and 130–600nA leakage ensure compatibility with high-speed interfaces when used on power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Stand-Off Voltage | 22 V - maximum continuous operating voltage before clamping activation |
| Clamping Voltage | 27.5–28 V at 40A (8/20μs) - limits transient overvoltage to safe levels for 22V-rated ICs like USB PD controllers |
| Peak Pulse Current | 40 A (8/20μs) - meets IEC 61000-4-5 Level 4 surge immunity for industrial equipment |
| Dynamic Resistance | 20 mΩ - enables flat clamping response and minimizes voltage rise under increasing surge current |
| Junction Capacitance | 175 pF at 22V/1MHz - low enough for power-rail protection without degrading DC-DC converter stability |
| ESD Withstand | ±30 kV contact & air (IEC 61000-4-2) - exceeds Level 4 for front-panel and connector-level ESD hardening |
| Operating Temperature | −40°C to +125°C - supports extended-range deployment in automotive under-hood, avionics, and industrial control |
Pinout & Package
Package: DFN 1.6 mm × 1.6 mm × 0.55 mm, 6-lead, Pb-free, RoHS/WEEE compliant, UL 94V-0 molding compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pins 1, 2, 3 | GND | Common ground return path - all three must be connected to minimize parasitic inductance during 40A surge events |
| Pins 4, 5, 6 | IN | Protected line input - tied together to distribute surge current across parallel bond wires and maximize IPP handling |
Key Features
| Feature | Design Value |
|---|---|
| Constant-clamp architecture | Clamping voltage deviates ≤0.5V from 27.5V across full 24–40A range and −40°C to +125°C - eliminates thermal derating uncertainty |
| FET-based shunt topology | Replaces PN-junction TVS with low-RDS(on) MOSFET - reduces energy dissipation in silicon junction and improves reliability under repeated surges |
| High-energy surge rating | 1120W peak pulse power (8/20μs) - sustains 40A transients without parametric shift or catastrophic failure |
| Low-leakage protection | ≤600nA reverse leakage at 22V - prevents battery drain in always-on IoT and remote sensor applications |
| Compact DFN footprint | 1.6 mm × 1.6 mm area - saves >60% board space vs. SO-8 or SMC TVS alternatives while maintaining 6-terminal current sharing |
Applications
| USB Type-C Power Delivery Protection | Industrial Load Switch Input Protection |
|---|---|
|
Use Scenario: Protecting VBUS lines in USB-C ports supporting up to 20V/5A PD negotiation against lightning-induced surges and hot-plug ESD. IC Role / Device Role / Timing Role: Primary EOS suppressor placed between connector and load switch or PD controller - activates within nanoseconds upon overvoltage detection. Use Value: Maintains 27.5V clamping at 40A and 125°C, preventing damage to 24V-tolerant PD controllers where conventional TVS would clamp >38V at same conditions. |
Use Scenario: Shielding enable and input pins of high-side load switches (e.g., HS2950P) in programmable logic controllers and remote metering terminals. IC Role / Device Role / Timing Role: Front-end transient guard - diverts surge energy away from sensitive gate-drive circuitry and internal FETs during field wiring faults. Use Value: Limits voltage stress to <28V during ±1kV IEC 61000-4-5 surges, preserving load switch integrity and avoiding latch-up or gate oxide rupture. |
| IoT Edge Node Power Rail Protection | Robotic Actuator Control Interface |
|
Use Scenario: Securing 22V auxiliary power inputs in battery-backed wireless sensors deployed in outdoor or factory-floor environments. IC Role / Device Role / Timing Role: Standalone rail protector - installed directly at power entry point with minimal trace length to reduce inductive kick during fast transients. Use Value: Delivers ±30kV ESD immunity and stable clamping across −40°C to +85°C operating range, ensuring uptime in uncontrolled ambient conditions. |
Use Scenario: Safeguarding motor driver enable and feedback lines in collaborative robots exposed to EFT bursts from nearby switching loads. IC Role / Device Role / Timing Role: Signal-line transient limiter - placed on 22V-rated control bus segments carrying position/speed commands to servo drives. Use Value: Withstands ±4kV EFT (IEC 61000-4-4) without degradation, preventing spurious shutdowns or erroneous motion commands during electromagnetic noise events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TDS2211P | Same 22V VRWM, identical 27.5–28V clamping at 40A, DFN-6 package, but commercial-grade (−40°C to +125°C, non-military screening) | Approved for industrial and consumer USB-C designs; lacks MIL-PRF-19500 qualification and JANTXV screening | Select for cost-sensitive, non-military programs requiring identical electrical performance and footprint. |
| SMAJ22A | Standard unidirectional TVS diode; 22V VRWM, 35.5V clamping at 40A, higher dynamic resistance (~0.5Ω), SO-201 package | Higher clamping voltage increases risk of downstream IC damage; larger footprint and lower surge endurance | Use only where legacy design constraints prevent DFN adoption and clamping margin >13V is acceptable. |
Compared with TDS2211P and SMAJ22A, JANTXV1N6475US provides identical clamping performance and compact packaging as TDS2211P but adds military-grade reliability screening, while offering significantly lower clamping voltage and superior thermal stability versus SMAJ22A's conventional TVS architecture.
Availability
JANTXV1N6475US is available at Aetrix Electronics and suitable for USB PD interface hardening, industrial load switch protection, and robotic actuator control requiring stable component supply across extended temperature and long-lifecycle programs.
Supply support for JANTXV1N6475US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs for aerospace, defense, and industrial markets.
JANTXV1N6475US belongs to Microsemi's JANTXV-series transient suppressors - engineered for mission-critical systems demanding MIL-PRF-19500 Class V screening, extended temperature operation, and guaranteed parametric stability under repeated surge stress.
FAQ
What is the clamping voltage specification for JANTXV1N6475US at maximum rated surge current?
JANTXV1N6475US clamps at 27.5–28 V when subjected to a 40 A peak pulse current with an 8/20 μs waveform. This value is guaranteed across the full operating temperature range (−40°C to +125°C) and reflects its FET-based constant-clamp architecture - a key differentiator from conventional TVS diodes whose clamping rises linearly with current.
Does JANTXV1N6475US meet IEC 61000-4-5 surge immunity requirements?
Yes, JANTXV1N6475US is rated for 40 A (8/20 μs) and ±1 kV (1.2/50 μs, RS = 42 Ω) per IEC 61000-4-5, making it suitable for Level 4 industrial surge protection. Its low dynamic resistance (20 mΩ) and stable clamping ensure compliance without derating at elevated temperatures - critical for DIN-rail mounted PLCs and outdoor IoT gateways.
How does JANTXV1N6475US differ from standard TVS diodes like SMAJ22A?
JANTXV1N6475US uses a surge-rated FET and precision trigger circuit instead of a PN junction, delivering near-constant clamping (27.5–28 V) across 24–40 A and −40°C to +125°C. In contrast, SMAJ22A exhibits rising clamping (>35 V at 40 A) and significant thermal drift - increasing risk of downstream IC damage in high-temperature or high-surge environments.
What is the recommended PCB layout for optimal performance of JANTXV1N6475US?
Place JANTXV1N6475US as close as possible to the protected connector. Connect all three GND pins (1, 2, 3) to a solid ground plane using multiple vias, and tie all three IN pins (4, 5, 6) together with a short, wide trace. Avoid thermal pads - energy is dissipated in the FET channel, not the junction. This layout minimizes inductance and ensures full 40 A surge capability.
Is JANTXV1N6475US suitable for protecting USB Type-C VBUS lines in PD applications?
Yes, JANTXV1N6475US is explicitly validated for USB Type-C VBUS protection in systems with up to 20 V PD negotiation. Its 22 V working voltage, 27.5 V clamping, and ±30 kV ESD rating meet USB-IF and IEC 61000-4-2 requirements. It protects PD controllers and load switches more reliably than standard TVS diodes, especially at elevated ambient temperatures.
JANTXV1N6475US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Package/Case:
- SQ-MELF
- Series:
- -
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 40.3V
- Voltage - Breakdown (Min):
- 43.7V
- Voltage - Clamping (Max) @ Ipp:
- 63.5V
- Current - Peak Pulse (10/1000µs):
- 24A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/516
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
JANTXV1N6475US FAQ
1.How can I place an order for JANTXV1N6475US through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6475US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6475US reliable?
The price and inventory of JANTXV1N6475US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6475US is usually 5 days.
3.What payment methods are accepted for JANTXV1N6475US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6475US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6475US?
JANTXV1N6475US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6475US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6475US?
For technical support, including JANTXV1N6475US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6475US requirements.
6.How does Aetrix verify that JANTXV1N6475US is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6475US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6475US meets industry standards.
7.What is the process for return or replacement of JANTXV1N6475US?
All JANTXV1N6475US units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6475US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6475US part is unused and in its original packaging.
Return procedure for JANTXV1N6475US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6475US Tags
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Diodes Incorporated
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Diodes Incorporated
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onsemi
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