My Inquiry
My Account
Microchip Technology JANTXV1N6630US/TR
- Part No.:
- JANTXV1N6630US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTXV1N6630US/TR.pdf
- Description:
- UFR,FRR
- Quantity:
- Payment:
- Shipping:
Inventory:6,359
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTXV1N6630US/TR from Microsemi is a hermetically sealed, voidless-glass ultrafast recovery surface-mount rectifier diode rated for 900 V working peak reverse voltage, 1.4 A average forward current at 25°C, and 1.8 A at 110°C with 50 ns high-current reverse recovery time-used in radiation-hardened military power conversion and high-reliability DC-DC stages.
For engineers reviewing the JANTXV1N6630US/TR datasheet, JANTXV1N6630US/TR pinout, JANTXV1N6630US/TR application, or JANTXV1N6630US/TR equivalent, key selection criteria include its MIL-PRF-19500/590 qualification, Category I metallurgical bond, 6.5°C/W junction-to-endcap thermal resistance, and controlled avalanche capability under transient overvoltage conditions.
Technical Context
This device operates as a unidirectional power rectifier with hard-glass hermetic sealing and tungsten slug construction to ensure mechanical robustness and radiation tolerance per MicroNote 050. Its triple-layer passivation and Sn/Pb-capped copper endcaps support solder reliability at 260°C for 10 s.
The JANTXV1N6630US/TR delivers 1.40 V forward voltage at 1.4 A (25°C) and 1.70 V at 3.0 A (150°C), with 2.0 μA max reverse leakage at 900 V and 40 pF junction capacitance-enabling stable switching in high-frequency SMPS topologies where low trr and predictable recovery overshoot are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 900 V - Maximum sustainable reverse voltage across operating temperature range without breakdown |
| IF(AV) @ TA=25°C | 1.40 A - Continuous forward current rating on PCB with controlled thermal resistance |
| IF(AV) @ TEC=110°C | 1.8 A - Derated average rectified current at endcap temperature, linear derating applies above 110°C |
| trr (High Current) | 50 ns - Reverse recovery time measured at IF = 2 A, di/dt = 100 A/μs, defining switching speed limit |
| RθJEC | 6.5°C/W - Thermal resistance from junction to endcap, enabling direct heatsinking via endcap mounting |
| VF @ 1.4 A, 25°C | 1.40 V - Forward conduction loss determining conduction efficiency in low-duty-cycle applications |
| IRM (rec) | 4.2 A - Peak reverse recovery current during turn-off, critical for snubber design and EMI control |
Pinout & Package
Package: Hermetically sealed voidless glass "E" (D-5B) surface-mount package with copper endcaps, tin/lead finish, cathode band marking, and 539 mg mass. Dimensions: BL = 5.08–5.72 mm, BD = 3.48–3.76 mm, ECT = 0.48–0.711 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to input source side; tungsten slug provides low-inductance, high-surge-current path |
| Cathode | Forward current exit point | Marked by black band; copper endcap enables low-resistance PCB pad bonding and thermal transfer |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration, ensuring >20-year operational stability in vacuum/space environments |
| Category I metallurgical bond | Guarantees interfacial integrity between silicon die and tungsten slug under thermal cycling and mechanical shock |
| Controlled avalanche capability | Withstands peak reverse power transients up to specified limits without degradation, reducing need for external clamping |
| Triple-layer passivation | Prevents surface charge accumulation and leakage drift under high-field, high-humidity, or radiation exposure |
| Inherent radiation hardness | Qualified per Microsemi MicroNote 050 for total ionizing dose (TID) tolerance in space-grade systems |
Applications
| Aerospace Power Distribution | Military Radar Transmitter Supplies |
|---|---|
Use Scenario: Rectifying pulsed high-voltage DC in satellite bus converters operating in LEO orbit. IC Role / Device Role / Timing Role: Unidirectional power switch handling 900 V reverse bias and 75 A surge during fault events. Use Value: Voidless glass seal and radiation hardness prevent parametric shift after 100 krad(Si) exposure, maintaining regulation accuracy. | Use Scenario: Output stage rectification in S-band radar modulator supplies requiring fast turn-off to minimize pulse distortion. IC Role / Device Role / Timing Role: Ultrafast recovery diode limiting reverse recovery tail to ≤50 ns at 2 A, preserving pulse fidelity. Use Value: 50 ns trr and 4.2 A IRM enable clean turn-off with minimal voltage overshoot into 50 Ω loads. |
| Avionics DC-DC Isolation | Nuclear Instrumentation Front-Ends |
Use Scenario: Secondary-side rectification in isolated 28 V → 5 V flyback converters for flight control computers. IC Role / Device Role / Timing Role: High-reliability rectifier with 1.40 V VF at 1.4 A minimizing conduction loss at light load. Use Value: 6.5°C/W RθJEC allows direct endcap heatsinking to chassis, sustaining 1.8 A at 110°C endcap temp. | Use Scenario: Bias supply rectification in gamma spectroscopy detector front-ends exposed to neutron flux. IC Role / Device Role / Timing Role: Radiation-tolerant rectifier maintaining leakage <2.0 μA after 1×10¹⁴ n/cm² fluence. Use Value: Inherent radiation hardness eliminates need for shielding or derating, simplifying enclosure design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultrafast rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6629US/TR | 800 V VRWM, 50 ns trr, same package and screening level | Suitable where system peak reverse voltage is capped at 800 V, allowing margin reduction | Select when lower VRWM suffices and tighter voltage margin is acceptable |
| JANTXV1N6631US/TR | 1000 V VRWM, 60 ns trr, 60 A peak surge vs. 75 A | Required for systems exceeding 900 V but tolerating slightly slower recovery | Choose when absolute maximum reverse voltage exceeds 900 V and 60 ns trr is acceptable |
Compared with JANTXV1N6629US/TR, JANTXV1N6630US/TR offers higher VRWM (900 V vs. 800 V) without sacrificing recovery speed; versus JANTXV1N6631US/TR, it provides faster trr (50 ns vs. 60 ns) and higher surge rating (75 A vs. 60 A), making it optimal for 900 V-class hardened SMPS where speed and ruggedness are prioritized.
Availability
JANTXV1N6630US/TR is available at Aetrix Electronics and suitable for aerospace power distribution, military radar transmitter supplies, and avionics DC-DC isolation requiring stable component supply under extended lifecycle and obsolescence management.
Supply support for JANTXV1N6630US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, emphasizing radiation tolerance and long-term stability.
The JANTXV1N6630US/TR belongs to Microsemi's military-qualified ultrafast rectifier family built for MIL-PRF-19500/590 compliance, targeting applications where failure is not an option-especially in space, airborne, and nuclear environments.
FAQ
What is the maximum working peak reverse voltage for JANTXV1N6630US/TR?
The JANTXV1N6630US/TR has a working peak reverse voltage (VRWM) of 900 V, verified per MIL-PRF-19500/590 test conditions. This rating applies across its full operating temperature range of −65°C to +150°C and defines the highest sustained reverse voltage the device can block without breakdown. Exceeding this value risks irreversible avalanche failure unless within controlled, short-duration transient limits.
Does JANTXV1N6630US/TR support surface-mount reflow assembly?
Yes, JANTXV1N6630US/TR is qualified for surface-mount reflow with a maximum solder temperature of 260°C for 10 seconds, per its D-5B (Package "E") specification. Its copper endcaps with tin/lead finish and voidless glass body ensure reliable wetting and thermal stability during standard leaded reflow profiles. Pad layout recommendations are provided in the official Microsemi datasheet revision G.
How does the reverse recovery time of JANTXV1N6630US/TR compare to commercial-grade equivalents?
JANTXV1N6630US/TR achieves 50 ns high-current reverse recovery time (trr) at IF = 2 A and di/dt = 100 A/μs-matching or exceeding many commercial ultrafast rectifiers while adding MIL-spec screening, hermetic sealing, and radiation tolerance. Unlike commercial parts, its trr is guaranteed over temperature and lifetime under military environmental stress, not just initial characterization.
Is JANTXV1N6630US/TR suitable for avalanche energy absorption?
Yes, JANTXV1N6630US/TR features controlled avalanche capability with defined peak reverse power limits, enabling safe operation during transient overvoltage events without parameter shift. Its Category I metallurgical bond and voidless glass construction maintain junction integrity during repeated avalanche cycles-critical in unclamped inductive switching applications such as radar modulators.
What thermal performance can be expected from JANTXV1N6630US/TR in a typical PCB mount?
With its 6.5°C/W junction-to-endcap thermal resistance (RθJEC), JANTXV1N6630US/TR delivers 1.8 A average forward current at 110°C endcap temperature when properly mounted to a thermally conductive surface. PCB pad layout per Microsemi's recommended dimensions (BL = 5.08–5.72 mm, BD = 3.48–3.76 mm) is essential to achieve this rating and avoid localized hot spots near the endcaps.
JANTXV1N6630US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 900 V
- Current - Average Rectified (Io):
- 1.4A
- Voltage - Forward (Vf) (Max) @ If:
- 1.4 V @ 1.4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 60 ns
- Current - Reverse Leakage @ Vr:
- 2 µA @ 900 V
- Capacitance @ Vr, F:
- 40pF @ 10V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
- Operating Temperature - Junction:
- -65°C ~ 150°C
JANTXV1N6630US/TR FAQ
1.How can I place an order for JANTXV1N6630US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6630US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6630US/TR reliable?
The price and inventory of JANTXV1N6630US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6630US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6630US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6630US/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N6630US/TR?
JANTXV1N6630US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6630US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6630US/TR?
For technical support, including JANTXV1N6630US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6630US/TR requirements.
6.How does Aetrix verify that JANTXV1N6630US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6630US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6630US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6630US/TR?
All JANTXV1N6630US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6630US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6630US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6630US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N6630US/TR Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
