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Microchip Technology JANTXV1N6641US/TR
- Part No.:
- JANTXV1N6641US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Diodes
- Package:
- SQ-MELF, D
- Datasheet:
-
JANTXV1N6641US/TR.pdf
- Description:
- SIGNAL OR COMPUTER DIODE
- Quantity:
- Payment:
- Shipping:
Inventory:6,151
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Product details
Overview
JANTXV1N6641US/TR from Microsemi is a hermetically sealed, metallurgically bonded, axial-lead switching diode in a D-5D glass package, rated for 75 V reverse working voltage (VRWM), 200 mA forward current (IF), and 1.10 V forward voltage (VF) at 200 mA, used in high-reliability military timing, pulse shaping, and clamping circuits operating from –65°C to +175°C.
For engineers reviewing the JANTXV1N6641US/TR datasheet, JANTXV1N6641US/TR pinout, JANTXV1N6641US/TR application, or JANTXV1N6641US/TR equivalent, key selection criteria include its 5.0 ns reverse recovery time (tRR), 3.0 pF junction capacitance (CT), 100 nA reverse leakage (IR1) at 10 µA, MIL-PRF-19500/609 qualification, and non-cavity glass construction for radiation-tolerant environments.
Technical Context
This diode operates as a fast-switching, low-capacitance, high-temperature discrete rectifier with metallurgical bonding ensuring stable junction integrity under thermal cycling. Its 75 V VRWM and 100 V V(BR)R rating support transient suppression in analog signal paths and precision timing references.
The device exhibits temperature-stable reverse leakage-100 nA at 25°C and 100 µA at 150°C-and maintains 5.0 ns tRR across –65°C to +175°C, enabling reliable operation in pulse generator trigger circuits and sample-and-hold clamp stages where timing fidelity is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 75 V - Maximum continuous reverse voltage before breakdown; defines safe operating range in clamping and protection circuits. |
| tRR | 5.0 ns - Reverse recovery time at IF = 200 mA, RL = 100 Ω; enables >100 MHz switching in pulse-forming networks. |
| CT | 3.0 pF at VR = 0 - Junction capacitance; minimizes signal distortion in RF sampling and high-speed logic interface clamps. |
| IF (max) | 200 mA - Rated forward current; supports sustained conduction in low-duty-cycle pulse applications without thermal runaway. |
| IR1 | 100 nA @ 10 µA - Reverse leakage at 25°C; ensures minimal DC error in precision analog hold circuits and reference dividers. |
| Operating Temp | –65°C to +175°C - Full military-grade junction temperature range; validated per MIL-PRF-19500/609 for aerospace avionics. |
Pinout & Package
Package: D-5D hermetically sealed glass case (MIL-PRF-19500/609 compliant), axial lead configuration with cathode band marking; lead finish: tin/lead; thermal resistance ROJEC = 50 °C/W (L = 0).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry point | Connected to lower-potential node in series-switching or clamping configurations; requires heatsinking only above 100 mA continuous. |
| Cathode | Forward current exit / reverse-blocking terminal | Banded end; referenced to system ground or bias rail in active clamp topologies; withstands 75 V reverse bias continuously. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/609 Qualified | JANTXV screening level ensures 100% lot testing for surge current (2.5 A, 8.3 ms), thermal shock, and hermeticity-required for flight-critical systems. |
| Metallurgical Bonding | Eliminates wire bonds and interfacial delamination risk; sustains >10⁶ thermal cycles between –65°C and +175°C without parameter drift. |
| Non-Cavity Glass Construction | Prevents internal moisture ingress and particle generation; achieves <1 × 10⁻⁸ atm·cc/sec He leak rate per MIL-STD-883 Method 1014. |
| Low tRR / CT Product | 5.0 ns × 3.0 pF = 15 ps - Ultra-low switching figure-of-merit enables sub-nanosecond edge preservation in pulse generators. |
Applications
| Radar Pulse Modulator Clamp | Avionics Timing Reference Clamp |
|---|---|
Use Scenario: Clamps radar transmitter modulator output to prevent overvoltage during pulse rise/fall transitions. IC Role / Device Role / Timing Role: Fast-switching diode providing sub-5 ns turn-off to limit overshoot and preserve pulse fidelity. Use Value: 5.0 ns tRR and 75 V VRWM ensure <1% amplitude error on 100 ns pulses at 100 kHz PRF in L-band transmitters. | Use Scenario: Stabilizes voltage reference node in airborne inertial navigation system timing circuits exposed to wide thermal swings. IC Role / Device Role / Timing Role: Precision clamp diode maintaining reference rail integrity across –55°C to +125°C ambient. Use Value: 100 nA IR1 at 25°C and 100 µA at 150°C enable <0.5 mV drift over full temperature range in 10 ppm/°C voltage dividers. |
| Satellite Power Sequencing Diode | Nuclear Instrumentation Pulse Shaper |
Use Scenario: Enables controlled power-up sequencing of radiation-hardened FPGAs and ADCs in LEO satellite payloads. IC Role / Device Role / Timing Role: High-temperature switching diode isolating supply domains during cold-start ramp-up. Use Value: 200 mA IF rating and –65°C to +175°C operation support uninterrupted sequencing across orbital thermal extremes. | Use Scenario: Shapes fast neutron detector pulses in reactor monitoring systems requiring sub-ns timing resolution. IC Role / Device Role / Timing Role: Low-junction-capacitance clamp diode preserving leading-edge integrity in charge-integration amplifiers. Use Value: 3.0 pF CT minimizes RC time constant loading on 50 Ω signal paths, retaining <100 ps rise time fidelity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N6640US/TR | Lower VF (0.87 V @ 200 mA), same tRR (5.0 ns), identical VRWM (75 V), but higher IR2 (100 µA @ 150°C vs. 100 µA for JANTXV1N6641US/TR) | Preferred where lower forward drop reduces power loss in high-duty-cycle clamp circuits | Select when forward conduction efficiency outweighs ultra-low leakage requirements |
| JANTXV1N6639US/TR | Higher VRWM (100 V), same tRR (5.0 ns), higher VF (1.20 V @ 500 mA), higher CT (2.5 pF) | Suitable for higher-voltage transient suppression where 100 V standoff is mandatory | Choose when system reverse voltage exceeds 75 V but sub-ns timing remains essential |
Compared with JANTXV1N6640US/TR and JANTXV1N6639US/TR, the JANTXV1N6641US/TR delivers the optimal balance of low leakage (100 nA), moderate VF (1.10 V), and tight tRR/CT coupling (5.0 ns / 3.0 pF) for precision pulse conditioning in thermally aggressive, radiation-aware platforms.
Availability
JANTXV1N6641US/TR is available at Aetrix Electronics and suitable for radar pulse modulators, avionics timing references, and satellite power sequencers requiring stable component supply under extended temperature and radiation exposure conditions.
Supply support for JANTXV1N6641US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, emphasizing radiation tolerance, extended temperature operation, and military specification compliance.
The JANTXV1N6641US/TR belongs to Microsemi's MIL-PRF-19500/609 qualified switching diode family, engineered specifically for high-speed, high-temperature signal conditioning in mission-critical timing, pulse generation, and clamping applications.
FAQ
What is the maximum reverse working voltage (VRWM) for JANTXV1N6641US/TR?
The JANTXV1N6641US/TR has a VRWM of 75 V, verified per MIL-PRF-19500/609 test conditions. This rating defines the maximum DC or repetitive peak reverse voltage the diode can block continuously without breakdown. Exceeding this value risks irreversible junction failure. The JANTXV1N6641US/TR must be operated within this limit in all clamping, protection, and signal routing applications.
What is the reverse recovery time (tRR) of JANTXV1N6641US/TR and how is it measured?
The JANTXV1N6641US/TR exhibits a reverse recovery time (tRR) of 5.0 ns, measured at IF = 200 mA, RL = 100 Ω, and VR = VRWM per MIL-PRF-19500/609. This parameter reflects the time required for minority carriers to clear after forward conduction ceases. The JANTXV1N6641US/TR's consistent 5.0 ns tRR across –65°C to +175°C makes it suitable for high-frequency pulse shaping where edge fidelity is critical.
Is JANTXV1N6641US/TR qualified to MIL-PRF-19500/609, and what does that entail?
Yes, JANTXV1N6641US/TR is fully qualified to MIL-PRF-19500/609 at the JANTXV level, including 100% lot testing for surge current (2.5 A, 8.3 ms), thermal shock (–65°C to +175°C, 5 cycles), and helium leak rate (<1 × 10⁻⁸ atm·cc/sec). This qualification confirms the JANTXV1N6641US/TR meets stringent reliability, environmental, and screening requirements for U.S. Department of Defense applications.
What is the junction capacitance (CT) of JANTXV1N6641US/TR and why does it matter?
The JANTXV1N6641US/TR has a junction capacitance (CT) of 3.0 pF measured at VR = 0 V. This low value minimizes capacitive loading on high-speed signal nodes, preserving rise/fall times in pulse-forming networks and RF sampling circuits. In applications such as radar modulator clamps, the JANTXV1N6641US/TR's 3.0 pF CT directly contributes to sub-100 ps edge fidelity when driving 50 Ω loads.
How does the forward voltage (VF) of JANTXV1N6641US/TR compare to similar MIL-spec diodes?
The JANTXV1N6641US/TR specifies VF = 1.10 V at IF = 200 mA, positioning it between JANTXV1N6640US/TR (0.87 V) and JANTXV1N6639US/TR (1.20 V). This mid-range VF balances conduction loss and switching speed-critical in thermally constrained avionics clamps where excessive VF raises junction temperature, while excessively low VF often correlates with higher tRR. The JANTXV1N6641US/TR's 1.10 V VF is optimized for duty cycles ≤10% in high-reliability pulse applications.
JANTXV1N6641US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, D
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 300mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.1 V @ 200 mA
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 5 ns
- Current - Reverse Leakage @ Vr:
- 100 nA @ 50 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/609
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D-5D
- Operating Temperature - Junction:
- -65°C ~ 175°C
JANTXV1N6641US/TR FAQ
1.How can I place an order for JANTXV1N6641US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N6641US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N6641US/TR reliable?
The price and inventory of JANTXV1N6641US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N6641US/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N6641US/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N6641US/TR transactions.
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4.How is shipping managed for JANTXV1N6641US/TR?
JANTXV1N6641US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N6641US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N6641US/TR?
For technical support, including JANTXV1N6641US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N6641US/TR requirements.
6.How does Aetrix verify that JANTXV1N6641US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N6641US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N6641US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N6641US/TR?
All JANTXV1N6641US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N6641US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N6641US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N6641US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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